Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge

Thin films of nanostructured silicon (ns-Si:H) were deposited by plasma-enhanced chemical vapor deposition in the presence of silicon nanoparticles at 100 C substrate temperature using silane and hydrogen gas mixture under continuous wave (cw) plasma conditions. The nanostructure of the films has been demonstrated by diverse ways: transmission electron microscopy, Raman spectroscopy and x-ray diffraction, which have shown the presence of ordered silicon clusters (1!=2 nm) embedded in an amorphous silicon matrix. Due to the presence of these ordered domains, the films crystallize faster than standard hydrogenated amorphous silicon samples, as evidenced by electrical measurements during the thermal annealing.

Kerr measurements on single-domain SrRuO3 thin films

We report on the magneto-optical measurements of an epitaxial SrRuO3 film grown on SrTiO3 (0 0 1), which previously was determined to be single domain orientated by x-ray diffraction and Raman spectroscopy techniques. Our experiments reveal a large Kerr rotation, which reaches a maximum value of about 0.5° at low temperature. By measuring magnetic hysteresis loops at different temperatures, we determined the temperature dependence of the Kerr rotation in the polar configuration. Values of the anisotropic magnetoresistance ~ 20% have been measured. These values are remarkably higher than those of other metallic oxides such as manganites. This striking difference can be attributed to the strong spin-orbit interaction of the Ru 4d ion in the SrRuO3 compound.

Nucleation of diamond on silicon, SiAlON, and graphite substrates coated with an a-C:H layer

We investigated the influence of a hydrogenated disordered carbon (a-C:H) layer on the nucleation of diamond. Substrates c-Si<100>, SiAlON, and highly oriented pyrolytic graphite {0001} were used in this study. The substrate surfaces were characterized with Auger electron spectroscopy (AES) while diamond growth was followed with Raman spectroscopy and scanning electron microscopy (SEM). It was found that on silicon and SiAlON substrates the presence of the a-C:H layer enabled diamond to grow readily without any polishing treatment. Moreover, more continuous diamond films could be grown when the substrate was polished with diamond powder prior to the deposition of the a-C:H layer. This important result suggests that the nucleation of diamond occurs readily on disordered carbon surfaces, and that the formation of this type of layer is indeed one step in the diamond nucleation mechanism. Altogether, the data refute the argument that silicon defects play a direct role in the nucleation process. Auger spectra revealed that for short deposition times and untreated silicon surfaces, the deposited layer corresponds to an amorphous carbon layer. In these cases, the subsequent diamond nucleation was found to be limited. However, when the diamond nucleation density was found to be high; i.e., after lengthy deposits of a¿C:H or after diamond polishing, the Auger spectra suggested diamondlike carbon layers.

Kromatografisen erotusfaasin huokoskoon karakterisointi

Työssä tutkittiin sulfonoitujen polystyreenidivinyylibentseenirunkoisten geeli-, meso- ja makrohuokoistenioninvaihtohartsien rakennetta käyttäen useita eri karakterisointimenetelmiä. Lisäksi työssä tutkittiin hartsien huokoskoon vaikutusta aminohappojen kromatografisessa erotuksessa. Työn pääpaino oli hartsien huokoskoon ja huokoisuuden määrittämisessä. Sen selvittämiseksi käytettiin hyväksi elektronimikroskopiaa, typpiadsorptiomittauksia, sekä käänteistä kokoekskluusiokromatografiaa. Parhaat tulokset saatiin käänteisellä kokoekskluusiokromatografialla, joka perustuu erikokoisten dekstraanipolymeerien käyttöön mallimolekyyleinä. Menetelmä sopii meso- ja makrohuokoisuuden tutkimiseen, mutta sen heikkoutena on erittäin pitkä mittausaika. Menetelmä antaa myös huokoskokojakauman, mutta yhden hartsin mittaaminen voi kestää viikon. Menetelmää muutettiin siten, että käytettiin määritettävää huokoskokoaluetta kuvaavien kahden dekstraanipolymeerin seosta. Kromatografiset ajo-olosuhteet optimoitiin sellaisiksi, että injektoidussa seoksessa olevien dekstraanien vastehuiput erottuivat toisistaan. Tällöin voitiin luotettavasti määrittää tutkittavan stationaarifaasin suhteellinen huokoisuus. Tätä työssä kehitettyä nopeaa käänteiseen kokoekskluusiokromatografiaan perustuvaa menetelmää kutsutaan kaksipistemenetelmäksi. Hartsien sulfonihapporyhmien määrää ja jakautumista tutkittiin määrittämällä hartsien kationinvaihtokapasiteetti sekä tutkimalla hartsin pintaa konfokaali-Raman-spektroskopian avulla. Sulfonihapporyhmien ioninvaihtokyvyn selvittämiseksi mitattiin K+-muotoon muutetusta hartsista S/K-suhde poikkileikkauspinnasta. Tulosten perusteella hartsit olivat tasaisesti sulfonoituneet ja 95 % rikkiatomeista oli toimivassa ioninvaihtoryhmässä. Aminohappojen erotuksessa malliaineina oli lysiini, seriini ja tryptofaani. Hartsi oli NH4+-muodossa ja petitilavuus oli 91 mL. Eluenttina käytettiin vettä, jonka pH oli 10. Paras tulos saatiin virtausnopeudella 0,1 mL/min, jolla kaikki kolme aminohappoa erottuivat toisistaan Finex Oy:n mesohuokoisella KEF78-hartsilla. Muilla tutkituilla hartseilla kaikki kolme aminohappoa eivät missään ajo-olosuhteissa erottuneet täysin.

Towards desired crystalline product properties: In-situ monitoring of batch crystallization

The objective of industrial crystallization is to obtain a crystalline product which has the desired crystal size distribution, mean crystal size, crystal shape, purity, polymorphic and pseudopolymorphic form. Effective control of the product quality requires an understanding of the thermodynamics of the crystallizing system and the effects of operation parameters on the crystalline product properties. Therefore, obtaining reliable in-line information about crystal properties and supersaturation, which is the driving force of crystallization, would be very advantageous. Advanced techniques, such asRaman spectroscopy, attenuated total reflection Fourier transform infrared (ATR FTIR) spectroscopy, and in-line imaging techniques, offer great potential for obtaining reliable information during crystallization, and thus giving a better understanding of the fundamental mechanisms (nucleation and crystal growth) involved. In the present work, the relative stability of anhydrate and dihydrate carbamazepine in mixed solvents containing water and ethanol were investigated. The kinetics of the solvent mediated phase transformation of the anhydrate to hydrate in the mixed solvents was studied using an in-line Raman immersion probe. The effects of the operation parameters in terms of solvent composition, temperature and the use of certain additives on the phase transformation kineticswere explored. Comparison of the off-line measured solute concentration and the solid-phase composition measured by in-line Raman spectroscopy allowedthe identification of the fundamental processes during the phase transformation. The effects of thermodynamic and kinetic factors on the anhydrate/hydrate phase of carbamazepine crystals during cooling crystallization were also investigated. The effect of certain additives on the batch cooling crystallization of potassium dihydrogen phosphate (KDP) wasinvestigated. The crystal growth rate of a certain crystal face was determined from images taken with an in-line video microscope. An in-line image processing method was developed to characterize the size and shape of thecrystals. An ATR FTIR and a laser reflection particle size analyzer were used to study the effects of cooling modes and seeding parameters onthe final crystal size distribution of an organic compound C15. Based on the obtained results, an operation condition was proposed which gives improved product property in terms of increased mean crystal size and narrowersize distribution.

Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

The structural relaxation of pure amorphous silicon a-Si and hydrogenated amorphous silicon a-Si:H materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon.

Effect of pressure on La2(WO4)3 with a modulated scheelite-type structure

We have studied the effect of pressure on the structural and vibrational properties of lanthanum tritungstate La2(WO4)3. This compound crystallizes under ambient conditions in the modulated scheelite-type structure known as the α phase. We have performed x-ray diffraction and Raman scattering measurements up to a pressure of 20 GPa, as well as ab initio calculations within the framework of the density functional theory. Up to 5 GPa, the three methods provide a similar picture of the evolution under pressure of α-La2(WO4)3. At 5 GPa, we begin to observe some structural changes, and above 6 GPa we find that the x-ray patterns cannot be indexed as a single phase. However, we find that a mixture of two phases with C2/c symmetry accounts for all diffraction peaks. Our ab initio study confirms the existence of several C2/c structures, which are very close in energy in this compression range. According to our measurements, a state with medium-range order appears at pressures above 9 and 11 GPa, from x-ray diffraction and Raman experiments, respectively. Based upon our theoretical calculations we propose several high-pressure candidates with high cationic coordinations at these pressures. The compound evolves into a partially amorphous phase at pressures above 20 GPa.

Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures

The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV when the percentage of wurtzite is increased. The downward shift of the emission peaks can be understood by carrier confinement at the interfaces, in quantum wells and in random short period superlattices existent in these nanowires, assuming a staggered band offset between wurtzite and zinc-blende GaAs. The latter is confirmed also by time-resolved measurements. The extremely local nature of these optical transitions is evidenced also by cathodoluminescence measurements. Raman spectroscopy on single wires shows different strain conditions, depending on the wurtzite content which affects also the band alignments. Finally, the occurrence of the two crystallographic phases is discussed in thermodynamic terms.

Thin Film Transistors obtained by Hot-Wire CVD

Hydrogenated microcrystalline silicon films obtained at low temperature (150-280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) spectroscopy and photothermal deflection spectroscopy (PDS). A crystalline fraction >90% with a subgap optical absortion 10 cm -1 at 0.8 eV were obtained in films deposited at growth rates >0.8 nm/s. These films were incorporated in n-channel thin film transistors and their electrical properties were measured. The saturation mobility was 0.72 ± 0.05 cm 2/ V s and the threshold voltage around 0.2 eV. The dependence of their conductance activation energies on gate voltages were related to the properties of the material.

Microdoping compensation of microcrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition

Undoped hydrogenated microcrystalline silicon was obtained by hot-wire chemical vapour deposition at different silane-to-hydrogen ratios and low temperature (<300 °C). As well as technological aspects of the deposition process, we report structural, optical and electrical characterizations of the samples that were used as the active layer for preliminary p-i-n solar cells. Raman spectroscopy indicates that changing the hydrogen dilution can vary the crystalline fraction. From electrical measurements an unwanted n-type character is deduced for this undoped material. This effect could be due to a contaminant, probably oxygen, which is also observed in capacitance-voltage measurements on Schottky structures. The negative effect of contaminants on the device was dramatic and a compensated p-i-n structure was also deposited to enhance the cell performance.

Development of phase retrieval algorithm and techniques for optical spectrum analysis

Coherent anti-Stokes Raman scattering is the powerful method of laser spectroscopy in which significant successes are achieved. However, the non-linear nature of CARS complicates the analysis of the received spectra. The objective of this Thesis is to develop a new phase retrieval algorithm for CARS. It utilizes the maximum entropy method and the new wavelet approach for spectroscopic background correction of a phase function. The method was developed to be easily automated and used on a large number of spectra of different substances.. The algorithm was successfully tested on experimental data.

Estudio del sistema Li2SO4-Na2SO4. Diagrama de fases y caracterizacion del LiNaSO4

Se presenta un estudio exhaustivo del diagrama de fase del sistema binario Li2SO4-Na2SO4. El diagrama de fases se determinó mediante termo-difractometría de rayos-X en muestras de polvo y calorimetría ATD. Se obtiene una nueva fase de fórmula Li2-xNaxSO4, con 1 ¿ x ¿ 1.22. La estructura cristalina de ß-LiNaSO4 se determinó por difracción de rayos-X sobre un monocristal. Este estudio muestra que los cristales usualmente se maclan cuando el crecimiento es por solución, lo cual explica la baja polarización espontánea. Se explica la dispersión Raman de los compuestos Li2SO4, Na2SO4 y LiNaSO4, a partir de los datos estructurales. Las medidas experimentales se han efectuado a diferentes velocidades de calentamiento y enfriamiento.

Drug loading of mesoporous silicon particles

Porous silicon (PSi) is a promising material to be utilized in drug delivery formulations. The release rate of the drug compound can be controlled by changing the pore properties and surface chemistry of PSi. The loading of a poorly soluble drug into mesoporous silicon particles enhances its dissolution in the body. The drug loading is based on adsorption. The attainable maximum loaded amount depends on the properties of the drug compound and the PSi material, and on the process conditions. The loading solvent also essentially affects the adsorption process. The loading of indomethacin into PSi particles with varying surface modification was studied. Solvent mixtures were applied in the loading, and the loaded samples were analyzed with thermal analysis methods. The best degree of loading was obtained using a mixture of dichloromethane and methanol. The drug loads varied from 7.7 w-% to 26.8 w-%. A disturbing factor in the loading experiments was the tendency of indomethacin to form solvates with the solvents applied. In addition, the physical form and stability of indomethacin loaded in PSi and silica particles were studied using Raman spectroscopy. In the case of silica, the presence of crystalline drug as well as the polymorph form can be detected, but the method proved to be not applicable for PSi particles.

Vinte anos de efeito SERS

The Surface Enhanced Raman Scattering (SERS) effect was observed for the first time in 1974, but it was only considered a new effect three years later, hence, nearly twenty years ago. Since its discovery, a significant amount of investigations have been performed aiming at to clarify the nature of the observed enhancement, to improve the surface stability and to establish applications which nowadays range from the study of biomolecules to catalysis. Some of the more relevant aspects of this effect which have been examined across the last two decades are summarized in this paper which presents the introductory aspects of SERS alongside with several of its applications.