Tunneling behaviors of photogenerated electrons in In0.15Ga0.85As/GaAs quantum well photoelectrodes

The photovoltaic spectral features and the behaviors of photocurrent versus the electrode potential for near surface In0.15Ga0.85As/GaAs quantum well electrodes have been investigated in nonaqueous solutions of ferrocene and acetylferrocene. The photovoltaic spectrum shows a sharp structure that reflects confined state-to-state exciton transition in the quantum well. Deep dips are observed in the photocurrent versus the electrode potential curves in both electrolytes at the different electrode potentials under the illumination of exciton resonance wavelength. These dips are qualitatively explained by considering the interfacial tunneling transfer of photogenerated electron within the quantum well.

Influence of (001) vicinal GaAs substrates on the optical properties of defects in low-temperature grown GaAs/AlGaAs multiple quantum wells

Photoluminescence (PL) spectroscopy and carrier lifetime measurement has been used to characterize optical properties of defects in the low-temperature (LT) grown GaAs/AlGaAs multiple quantum well structures. Two sets of samples were grown at 400 degrees C by molecular beam epitaxy on nominal (001) and miscut [4 degrees off (001) towards (111) A] GaAs substrates, respectively. After growth, samples were subjected to 30 s rapid thermal annealing at 600-800 degrees C. It is found that after annealing, two defect-related PL features appear in the samples grown on nominal (001) GaAs substrates, but not in those grown on miscut (001) GaAs substrates. The carrier lifetimes are about 31 and 5 ps in as-grown samples grown on nominal and miscut (001) GaAs substrates, respectively. The different PL spectra and carrier lifetimes in two sets of samples are attributed to different structures of the As-Ga-like defects formed during LT growth. (C) 1999 American Institute of Physics. [S0003-6951(99)00230-2].

Simulation on Gain Recovery of Quantum Dot Semiconductor Optical Amplifiers by Rate Equation

The gain recoveries in quantum dot semiconductor optical amplifiers are numerically studied by rate equation models. Similar to the optical pump-probe experiment, the injection of double optical pulses is used to simulate the gain recovery of a weak continuous signal for the QD SOAs. The gain recoveries are fitted by a response function with multiple exponential terms. For the pulses duration of 10 ps, the gain recovery can be described by three exponential terms with the time constants, and for the pulse with the width of 150 fs, the gain recovery can be described by two exponential terms, the reason is that the short pulse does not consume lot of carriers.

Observation of quantum beat in Rb by parametric four-wave mixing

Two coupled parametric four-wave-mixing processed in Rb atoms are studied using perturbation theory, which reveals clear evidence of the appearance of quantum beat at 608 cm(-1), corresponding to the energy difference of the 7s - 5d states of Rb atoms, in the parametric four-wave-mixing signals. A pump-probe technique is utilized to observe the quantum beat. Time-varying characteristics of the quantum beat are investigated using time-dependent Fourier transform. The results show that the time-varying characteristics of the quantum beat potential tool for monitoring the dissociation of molecules.

Franz-Keldysh effect and dynamical Franz-Keldysh effect of cylindrical quantum wires

We investigate the interband optical absorption spectra near the band edge of a cylindrical semiconductor quantum wire in the presence of a static electric field and a terahertz electric field polarized along the axis. Optical absorption spectra are nonperturbatively calculated by solving the low-density semiconductor Bloch equations in real space and real time. The influence of the Franz-Keldysh (FK) effect and dynamical FK effect on the absorption spectrum is investigated. To highlight the physics behind the FK effect and dynamical FK effect, the spatiotemporal dynamics of the polarization wave packet are also presented. Under a reasonable static electric field, substantial and tunable absorption oscillations appear above the band gap. A terahertz field, however, will cause the Autler-Townes splitting of the main exciton peak and the emergence of multiphoton replicas. The presented results suggest that semiconductor quantum wires have potential applications in electro-optical devices.

WELL WIDTH DEPENDENCE OF THE EXCITON LIFETIME IN NARROW GAAS/GAALAS QUANTUM-WELLS

We have studied the radiative excitonic lifetime as a function of the well width in GaAs/GaAlAs quantum wells. An increasing lifetime with decreasing well width has been observed in very narrow and high quality GaAs/GaAlAs quantum wells, and attributed to the reduced overlap of the electron and hole wave functions and the increase of the exciton effective volume. This is the first observation of its kind in the conventional GaAs/GaAlAs quantum wells.

Exciton states in isolated quantum wires

The exciton states in isolated and semi-isolated quantum wires are studied. It is found that the image charges have a large effect on the effective Coulomb potential in wires. For the isolated wire the effective potential approaches the Coulomb potential in vacuum at large z distance. For the semi-isolated wire the effective potential is intermediate between the Coulomb potential in vacuum and the screened Coulomb potential at large distance. The exciton binding energy in the isolated wire is about ten times larger than that in the quantum well, and that in the semi-isolated wire is also intermediate between those in the isolated wire and in the quantum well. When the lateral width increases the binding energy decreases further, and approaches that in the quantum well. The real valence-band structure is taken into account, the exciton wave functions of the ground state in the zero-order approximation are given, and the reduced mass is calculated. The effect of the coupling between the ground and excited states are considered by the degenerate perturbation method, and it is found the coupling effect is small compared to the binding energy.

Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption

Photoluminescence and time-resolved photoluminescence were used to study the heterointerface configuration in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy with growth interruption. Photoluminescence spectra of the growth-interrupted sample are characterized by multiplet structures, with energy separation corresponding to a 0.8 monolayer difference in well width, rather than 1 monolayer as expected from the ''atomically smooth island'' picture. By analyzing the thermal transfer process of the photogenerated carriers and luminescence decay process, we further exploit the exciton localization at the interface microroughness superimposed on the extended growth islands. The lateral size of the microroughness in our sample was estimated to be 5 nm, less than the exciton diameter of 15 nm. Our results strongly support the bimodal roughness model proposed by Warwick et al. [Appl. Phys. Lett. 56, 2666 (1990)]. (C) 1996 American Institute of Physics.

Energy relaxation processes of hot quasi-two-dimensional excitons in very thin GaAs/AlGaAs quantum wells by exciton-acoustic-phonon interaction

The rising time of the excitonic luminescence in GaAs/AlGaAs quantum wells is studied as a function of the well width. For well thickness below approximately 20 Angstrom, we find an increase of rising time with decreasing well width. We explain the dependence of the rising time on well width in very thin quantum wells by the slow-down energy relaxation and/or exciton migration processes due to the decrease of the scattering rate of the exciton-acoustic-phonon interaction. (C) 1996 American Institute of Physics.

A DOUBLE-QUANTUM-WELL IN A DRIVING LASER FIELD

The dynamic effect of electrons in a double quantum well under the influence of a monochromatic driving laser field is investigated. Closed-form solutions for the quasienergy and Floquet states are obtained with the help of SU(2) symmetry. For the case of weak interlevel coupling, explicit expressions of the quasienergy are presented by the use of perturbation theory, from which it is found that as long as the photon energy is not close to the tunnel splitting, the electron will be confined in an initially occupied eigenstate of the undriven system during the whole evolution process. Otherwise, it will transit between the lowest two levels in an oscillatory behavior.

Fusion dynamics of symmetric systems near barrier energies

Within the framework of the improved isospin-dependent quantum molecular dynamics (ImIQMD) model,he fusion dynamics of symmetric reaction systems are investigated systematically. Calculations show that the number of nucleon transfer in the neck region is appreciably dependent on the incident energies, but strongly on he reaction systems. A comparison of the neck dynamics is performed for the symmetric reactions 58Ni+58Niand 64Ni+64Ni at energies in the vicinity of the Coulomb barrier. An increase of the ratios of the neutron to proton in the neck region at initial collision stage is observed and obvious for the latter system, which reduces the fusion barrier of two colliding nuclei. The distribution of the dynamical fusion barriers and the fusion excitation functions are calculated and compared with the available experimental data.

Entanglement dynamics and chaos in the Dicke model

We study dynamical properties of quantum entanglement in the Dicke model with and without the rotating-wave approximation. Specifically, we investigate the maximal entanglement and mean entanglement which reflect the underlying chaos in the system, and a good classical-quantum correspondence is found. We also show that the maximal linear entropy can be more sensitive to chaos than the mean linear entropy.

Dynamics of Vortex-Wave under a Travelling-Wave Modulation

The mecha nism of destabilization is studied for the rotating vortices (scroll waves and spiral waves) in excitable media induced by a parameter modulation in the form of a travelling-wave. It is found that a rigid rotating spiral in the two-dimensional (2D) system undergoes asynchronized drift along a straightline, and a 3D scrolling with its filament closed into a circle can be reoriented only if the direction of wavenumber of a travelling-wave perturbation is parallel to the ring plane. Then, in order to describe the behaviour of the synchronized drift of spiral wave and the reorientation of scrollring, the approximate formulas are given to exhibit qualitative agreements with the observed results.

Nuclear reaction dynamics induced by halo-nuclei at intermediate energy heavy ion collisions

We studied systematically the reaction dynamics induced by neutron-halo nuclei and proton-halo nuclei within the isospin dependent quantum molecular dynamics, such as the effects of loose bound halo-nuclei on the fragmentation reaction and momentum dissipation for different colliding systems with different beam energies and different impact parameters. In order to emphasize the roles of neutron-halo nucleus B-19 and proton-halo nucleus Al-23 on the reaction dynamics we also calculated the the reaction dynamics induced by the stable nuclei F-19 and Na-23 with equal mass under identical incident channel conditions. Based on the comparison of results of reaction dynamics induced by halo-nucleus colliding systems and stable nucleus collidinmg systems we found that the roles of loose bound halo-nucleus structure on the fragmentation multiplicity and nuclear stopping (momentum dissipation) are important for all of colliding systems with different beam energies and minor impact parameters, such as, the loose bound halo-nuclei structure increases the fragmentation multiplicity, but reduces the nuclear stopping.