1.3-μm Quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: A theoretical study

Due to the keen interest in improving the high-speed and high-temperature performance of 1.3-μm wavelength lasers, we compare, for the first time, the material gain of three different competing active layer materials, namely InGaAsP-InGaAsP, AlGaInAs-AlGaInAs, and InGaAsN-GaAs. We present a theoretical study of the gain of each quantum-well material system and present the factors that influence the material gain performance of each system. We find that AIGaInAs and InGaAsN active layer materials have substantially better material gain performance than the commonly used InGaAsP, both at room temperature and at high temperature.

Characterization of the temperature sensitivity of gain and recombination mechanisms in 1.3-μm AlGaInAs MQW lasers

The potential of 1.3-μm AlGaInAs multiple quantum-well (MQW) laser diodes for uncooled operation in high-speed optical communication systems is experimentally evaluated by characterizing the temperature dependence of key parameters such as the threshold current, transparency current density, optical gain and carrier lifetime. Detailed measurements performed in the 20°C-100°C temperature range indicate a localized T0 value of 68 K at 98°C for a device with a 2.8μm ridge width and 700-μm cavity length. The transparency current density is measured for temperatures from 20°C to 60°C and found to increase at a rate of 7.7 A·cm -2 · °C-1. Optical gain characterizations show that the peak modal gain at threshold is independent of temperature, whereas the differential gain decreases linearly with temperature at a rate of 3 × 10-4 A-1·°C-1. The differential carrier lifetime is determined from electrical impedance measurements and found to decrease with temperature. From the measured carrier lifetime we derive the monomolecular (A), radiative (B), and nonradiative Auger (C) recombination coefficients and determine their temperature dependence in the 20 °C-80 °C range. Our study shows that A is temperature independent, B decreases with temperature, and C exhibits a less pronounced increase with temperature. The experimental observations are discussed and compared with theoretical predictions and measurements performed on other material systems. © 2005 IEEE.

35 GHz passive mode-locking of InGaAs/GaAs quantum dot lasers at 1.3 μm with Fourier-limited pulses

We report 35 GHz passive mode-locking and 20 GHz hybrid mode-locking of quantum dot (QD) lasers at 1.3 μm. Our investigations show ultrafast absorber recovery times and for the first time transform-limited mode-locked pulses. © 2003 Optical Society of America.

Analysis of the mechanisms for impaired high-temperature, high-speed performance of 1.3 μm InGaAsP lasers

In this paper, the static and dynamic performance of multi quantum-well (MQW) 1.3 μm InGaAsP Fabry Perot lasers is assessed experimentally and theoretically to identify the mechanisms responsible for impaired high speed performance at elevated temperature. Initially, threshold currents and spontaneous emission spectra are characterized for a range of temperatures from room temperature to 85 °C to indicate a significant increase in non-radiative current contributions. Preliminary estimates are made for the contributions of leakage and Auger recombination rates, found from the dependence of integrated spontaneous emission with carrier density. Drift-diffusion modelling is found to accurately predict the trend of threshold currents over temperature. Using gain modelling good agreement is found between the measured and predicted integrated spontaneous emission intensity. Gain measurements at 85 °C indicate a reduction in RIN frequency to 63% of the 25 °C value which matches well with experimental small signal performance.

Reports of the ICSF seminar / workshop on the conditions of fishworkers on distant water vessels, Manila, Philippines, 1-3 February 1991

This ICSF Exchange Programme held in Manila is an offshoot of the Bangkok Conference on “Global Fisheries Trends and Future of Fishworkers” held on January 22–27, 1990. One of the issues raised in that conference was about the operation of Taiwanese fishing vessels outside its territorial waters and the impact of such operations on small fishermen from the countries concerned. The presence of a Taiwanese fishworker as well as an NGO supporter contributed to an enlightening discussion as the former shed light on the sad plight of Taiwanese fishworkers who are the victims of such structural problems. This meaningful exchange between groups of fishermen, particularly Taiwanese and Filipinos, resulted in the plan of the Taiwanese delegation to have some Taiwanese fishermen visit the Philippines and immerse in fishing communities.

2,4-二取代氨基-6-取代-[1,3,5]三嗪或1,3-嘧啶类化合物、其制备方法、药物组合物及用途

一种新型的2，4-二取代氨基-6-取代-[1，3，5]三嗪或1，3-嘧啶衍生物及其制备方法、药物组合物和其药理用途，其结构通式如式(I)所示，其中R1、R2、R3、R4、R5、R6、A、B、X、Y和Z的定义如说明书中所述。该类化合物与HIV-1整合酶具有很高结合活性，并且在底物竞争测试中能够有效的抑制整合酶对底物的结合。因此该类化合物是较强的HIV-1整合酶抑制剂，有望开发成为新的抗HIV病毒药物。

1-3 Piezocomposite design optimised for high frequency kerfless transducer arrays

Piezocomposites that can operate at frequencies above 30 MHz without spurious modes are required in order to develop sufficiently sensitive high frequency arrays for high resolution imaging. However, scaling down of conventional piezocomposite fabrication techniques becomes increasingly difficult as dimensions decrease with increasing frequency. The approach presented here is to use micro-moulded 1-3 piezocomposites and a distribution of piezoelectric segment size and separation. Innovative approaches to composite pattern design, based on a randomized spatial distribution, are presented. Micro-moulding techniques are shown to be suitable for fabricating composites with dimensions required for high frequency composites. Randomized piezocomposite patterns are modeled and are shown to suppress spurious modes.