Electrical switching in amorphous Si-Te-Ge thin films: Impact of input energy on crystallization process and switching parameters

Electrical switching studies on amorphous Si15Te74Ge11 thin film devices show interesting changes in the switching behavior with changes in the input energy supplied; the input energy determines the extent of crystallization in the active volume, which is reflected in the value of SET resistances. This in turn, determines the trend exhibited by switching voltage (V-t) for different input conditions. The results obtained are analyzed on the basis of the amount of Joule heat generated, which determines the temperature of the active volume. Depending on the final temperature, devices are rendered either in the intermediate state with a resistance of 5*10(2) Omega or the ON state with a resistance of 5*10(1) Omega. (C) 2013 Elsevier B.V. All rights reserved.

Influence of binder solvent on carbon-layer structure in electrical-double-layer capacitors

Porous activated-carbons with a large surface-area have been the most common materials for electrical-double-layer capacitors (EDLCs). These carbons having a wide pore distribution ranges from micropores to macropores in conjunction with a random pore connection that facilitates the high specific-capacitance values. Pore distribution plays a central role in controlling the capacitance value of EDLCs, since electrolyte distribution inside the active material mainly depends on the pore distribution. This has a direct influence on the distribution of resistance and capacitance values within the electrode. As a result, preparation of electrodes remains a vital issue in realising high-performance EDLCs. Generally, carbon materials along with some binders are dispersed into a solvent and coated onto the current collectors. This study examines the role of binder solvents used for the carbon-ink preparation on the microstructure of the electrodes and the consequent performance of the EDLCs. It is observed that the physical properties of the binder solvent namely its dielectric constant, viscosity and boiling point have important role in determining the pore-size distribution as well as the microstructure of electrodes which influence their specific capacitance values.

The effect of Se doping on spectroscopic and electrical properties of GeTe

Selenium doped thin films of GeTe alloys were investigated for their structural modifications by X-ray Diffraction, Fourier Transform Infrared Spectroscopy, X-ray photoelectron Spectroscopy (XPS) and Raman Spectroscopy. The band gap increase from 0.69 to 1.10 eV with increasing Se addition signifies the possibility of band gap tuning in the material. Disorder decreases, band widens and conductivity saturates about 0.20 at.% of Se addition. Structural changes are explained by the bond theory of solids. The as-deposited films are amorphous and 0.50 at.% Se alloy forms a homogeneous amorphous phase with a mixture of Ge-Se and Te-Se bonds. The XPS core level spectra and Raman spectra investigation clearly indicate the formation of Ge-Se, GeTe2 and Te-Se bonds with Se addition. Crystallization temperature is found to be increasing with Se and the 0.10 at.% Se alloy is found to have a higher resistance contrast compared to other Se concentration alloys. Up to 0.10 at.% of Se addition can enhance GeTe phase change memory properties. (C) 2013 Elsevier B.V. All rights reserved.

Physical Insights on the Ambiguous Metal-Graphene Interface and Proposal for Improved Contact Resistance

The ambiguous behavior of metal-graphene interface has been addressed in this paper using density functional theory and nonequilibrium Green's function formalism. For the first time, the fundamental chemistry of metal-graphene interface, in particular role of sp-hybridized and sp(2)-hybridized carbon atoms, has been emphasized and discussed in detail in this paper. It was discovered that the sp-hybridized sites at the edge of a graphene monolayer contribute to 40% of current conduction when compared with sp(2)-hybridized atom sites in the graphene-metal overlap region. Moreover, we highlighted the insignificance of an additional metal layer, i.e., sandwiched contact, due to lacking sp-hybridized carbon sites. A fundamental way of defining the contact resistance, while keeping chemical bonding in mind, has been proposed. The bonding insight has been further used to propose the novel ways of interfacing metal with graphene, which results in a 40% reduction in contact resistance.

Evaluation of the Grounding Resistance of Conductors Buried in Steplike Terrain

Availability of land for conventional air-insulated substations is becoming increasingly difficult not only in urban but also in semiurban areas. When the land made available is highly uneven, the associated technoeconomic factors favors the erection of substations on a steplike-formed ground surface and such constructions are in service for more than ten years in some parts of southern India. Noting that the literature on the performance of ground grids in such a construction is rather scarce, the present work was taken up. Evaluation of the performance of earthing elements in steplike ground forms the main goal of the present work. For the numerical evaluation, a suitable boundary-based methodology is employed. This method retains the classical Galerkin approach for the conductors, while the interfaces are replaced by equivalent fictitious surface sources defined over unstructured mesh. Details of the implementation of this numerical method, along with special measures to minimize the computation, are presented. The performance of basic earthing elements, such as the driven rod, counterpoise, and simple grids buried in steplike ground, are analyzed and compared with that for the case with uniform soil surface. It is shown that more than the earthing resistances, the step potentials can get significantly affected.

Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET

A new method for the separation of contact resistance (R-contact) into Schottky barrier resistance (R-SB) and interlayer resistance (R-IL) is proposed for multilayered MoS2 FETs. While R-SB varies exponentially with Schottky barrier height (Phi(bn)), R-IL essentially remains unchanged. An empirical model utilizing this dependence of R-contact versus Phi(bn) is proposed and fits to the experimental data. The results, on comparison with the existing reports of lowest R-contact, suggest that the extracted R-IL (1.53 k Omega.mu m) for an unaltered channel would determine the lower limit of intrinsic R-contact even for barrierless contacts for multilayered exfoliated MoS2 FETs.

Electrical and field emission investigation of individual carbon nanotubes from plasma enhanced chemical vapour deposition

Plasma enhanced chemical vapour deposition (PECVD) is a controlled technique for the production of vertically aligned multiwall carbon nanotubes for field emission applications. In this paper, we investigate the electrical properties of individual carbon nanotubes which is important for designing field emission devices. PECVD nanotubes exhibit a room temperature resistance of 1-10 kΩ/μm length (resistivity 10-6 to 10-5 Ω m) and have a maximum current carrying capability of 0.2-2 mA (current density 107-108 A/cm2). The field emission characteristics show that the field enhancement of the structures is strongly related to the geometry (height/radius) of the structures and maximum emission currents of ∼ 10 μA were obtained. The failure of nanotubes under field emission is also discussed. © 2002 Elsevier Science B.V. All rights reserved.

Electrical, electrochemical, and optical characterization of ceria films

Acceptor-doped ceria has been recognized as a promising intermediate temperature solid oxide fuel cell electrode/electrolyte material. For practical implementation of ceria as a fuel cell electrolyte and for designing model experiments for electrochemical activity, it is necessary to fabricate thin films of ceria. Here, metal-organic chemical vapor deposition was carried out in a homemade reactor to grow ceria films for further electrical, electrochemical, and optical characterization. Doped/undoped ceria films are grown on single crystalline oxide wafers with/without Pt line pattern or Pt solid layer. Deposition conditions were varied to see the effect on the resultant film property. Recently, proton conduction in nanograined polycrystalline pellets of ceria drew much interest. Thickness-mode (through-plane, z-direction) electrical measurements were made to confirm the existence of proton conductivity and investigate the nature of the conduction pathway: exposed grain surfaces and parallel grain boundaries. Columnar structure presumably favors proton conduction, and we have found measurable proton conductivity enhancement. Electrochemical property of gas-columnar ceria interface on the hydrogen electrooxidation is studied by AC impedance spectroscopy. Isothermal gas composition dependence of the electrode resistance was studied to elucidate Sm doping level effect and microstructure effect. Significantly, preferred orientation is shown to affect the gas dependence and performance of the fuel cell anode. A hypothesis is proposed to explain the origin of this behavior. Lastly, an optical transmittance based methodology was developed to obtain reference refractive index and microstructural parameters (thickness, roughness, porosity) of ceria films via subsequent fitting procedure.

A feasible approach to optical-electrical hybrid data storage using phase change material

We present our experimental results supporting optical-electrical hybrid data storage by optical recording and electrical reading using Ge2Sb2Te5as recording medium. The sheet resistance of laser- irradiated Ge2Sb2Te5. lms exhibits an abrupt change of four orders of magnitude ( from 10 7 to 10 3./ sq) with increasing laser power, current- voltage curves of the amorphous area and the laser- crystallized dots, measured by a conductive atomic force microscope ( C- AFM), show that their resistivities are 2.725 and 3.375 x 10- 3., respectively, the surface current distribution in the. lms also shows high and low resistance states. All these results suggest that the laser- recorded bit can be read electrically by measuring the change of electrical resistivity, thus making optical electrical hybrid data storage possible.

Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

Sheet resistance of laser-irradiated Ge2Sb2Te5 thin films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance undergoes an abrupt drop from 10(7) to 10(3) Omega/square at about 580 mW. The abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by X-ray diffraction (XRD) study of the samples around the abrupt change point. Crystallized dots were also formed in the amorphous Ge2Sb2Te5 films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 x 10(-3) and 2.725 Omega m, sheet resistance is 3.37 x 10(4) and 2.725 x 10(7) Omega/square respectively, deduced from the I-V Curves that is obtained by conductive atomic force microscope (C-AFM). (C) 2008 Elsevier B.V. All rights reserved.

Directional algebraic reconstruction technique for electrical impedance tomography

We assume that the resistance matrix can be found in electrical impedance tomography from the assumption of linear dependence between the voltages and the currents and with the help of the resistance matrix and the transfer impedance between the electrodes, a directional algebraic reconstruction technique is proposed. The goal is to reconstruct the resistivity distribution by weighting the matrices that are obtained by calculating the orthogonal distance of the underlying mesh elements from the neighbouring port resistivity lines. These weighting matrices, which only depend on the topology of the underlying mesh, can be calculated offline and result in a computationally efficient online procedure with a reasonable image reconstruction performance. Simulation results are provided to validate this approach.