A simple method for large-scale preparation of chick embryo tRNA

A simple method for preparing bulk quantities of tRNA from chick embryo has been developed. In this method chick embryos were homogenized in a buffer of pH 4.5, followed by deproteinization with phenol. The aqueous layer was allowed to separate under gravity. The resulting aqueous layer, after two more phenol treatments, was directly passed through a DEAE-cellulose column and the tRNA eluted therefrom with 1 Image NaCl. The tRNA prepared by this method was as active as the one prepared at neutral pH.

Laminar compressible boundary layer flow at a three-dimensional stagnation point with vectored mass transfer

The effect of surface mass transfer velocities having normal, principal and transverse direction components (�vectored� suction and injection) on the steady, laminar, compressible boundary layer at a three-dimensional stagnation point has been investigated both for nodal and saddle points of attachment. The similarity solutions of the boundary layer equations were obtained numerically by the method of parametric differentiation. The principal and transverse direction surface mass transfer velocities significantly affect the skin friction (both in the principal and transverse directions) and the heat transfer. Also the inadequacy of assuming a linear viscosity-temperature relation at low-wall temperatures is shown.

Selective-Area Atomic Layer Deposition

Atomic layer deposition (ALD) is a method to deposit thin films from gaseous precursors to the substrate layer-by-layer so that the film thickness can be tailored with atomic layer accuracy. Film tailoring is even further emphasized with selective-area ALD which enables the film growth to be controlled also on the substrate surface. Selective-area ALD allows the decrease of a process steps in preparing thin film devices. This can be of a great technological importance when the ALD films become into wider use in different applications. Selective-area ALD can be achieved by passivation or activation of a surface. In this work ALD growth was prevented by octadecyltrimethoxysilane, octadecyltrichlorosilane and 1-dodecanethiol SAMs, and by PMMA (polymethyl methacrylate) and PVP (poly(vinyl pyrrolidone) polymer films. SAMs were prepared from vapor phase and by microcontact printing, and polymer films were spin coated. Microcontact printing created patterned SAMs at once. The SAMs prepared from vapor phase and the polymer mask layers were patterned by UV lithography or lift-off process so that after preparation of a continuous mask layer selected areas of them were removed. On these areas the ALD film was deposited selectively. SAMs and polymer films prevented the growth in several ALD processes such as iridium, ruthenium, platinum, TiO2 and polyimide so that the ALD films did grow only on areas without SAM or polymer mask layer. PMMA and PVP films also protected the surface against Al2O3 and ZrO2 growth. Activation of the surface for ALD of ruthenium was achieved by preparing a RuOX layer by microcontact printing. At low temperatures the RuCp2-O2 process nucleated only on this oxidative activation layer but not on bare silicon.

Design of NRAs having higher aperture opening ratio and autocorrelation compression ratio by means of a global optimization method

When noises considerations are made, nonredundant arrays (NRAs) are endowed with many advantages which other arrays e.g., uniformly redundant arrays (URAs) do not possess in applications of coded aperture imaging. However, lower aperture opening ratio limits the applications of NRA in practice. In this paper, we present a computer searching method based on a global optimization algorithm named DIRECT to design NRAs. Compared with the existing NRAs e.g., Golay's NRAs, which are well known and widely used in various applications, NRAs found by our method have higher aperture opening ratio and auto correlation compression ratio. These advantages make our aperture arrays be very useful for practical applications especially for which of aperture size are limited. Here, we also present some aperture arrays we found. These aperture arrays have an interesting property that they belong to both NRA and URA. (C) 2006 Elsevier GmbH. All rights reserved.

Compensation of reflectance response deviations of guided-mode resonant filters induced by overetching fabrication

Unless the fabrication error control is well treated, it easily causes overetched fabrication errors, which causes the resonant peak value deviation during the fabrication process of guided-mode resonant filters (GMRFs). Hence, the fabrication error control becomes a key point for improving the performance of GMRF. We find that, within the range of the groove depth from 93 to 105 nm, the relationship between the overetched error and the resonant peak value deviation is nearly linear, which means that we can compensate the reflectance response deviation and reduce the resonant peak value deviation by the method of covering the layer film on the GMRF. Simulation results show that the deviation is compensated perfectly by this way. (C) 2008 Optical Society of America

Trawling pull exerted by a trawler: a method of estimation from propeller dimensions and its comparison with sea measurements

The proper matching of the pull exerted by a trawler and the size of trawl is important for maximizing the catching efficiency. The available pull is more dependent on the propeller and its working conditions than the installed engine power. The normal practice is to directly connect net size to the installed power in the boat by formulae without reference to the prope1ler dimensions or the available trawling pull and this is not adequate to find out the optimum combination. By the method outlined in this paper, the accurate calculation of trawling pull is possible by taking into account only the propeller diameter, pitch and r. p. m. The predictions by the method are compared for trawlers with powers between 30 and 60 hp and agreement is found to be within + 5%. The power absorbed by the propeller in trawling condition can also be calculated by this method for checking whether the engine is being overloaded.

Investigation of Ge-Si atomic interdiffusion in Ge nano-dots multilayer structure by double crystal X-ray diffraction

The fluctuations of the strained layer in a superlattice or quantum well can broaden the width of satellite peaks in double crystal X-ray diffraction (DCXRD) pattern. It is found that the width of the 0(th) peak is directly proportional to the fluctuation of the strained layer if the other related facts are ignored. By this method, the Ge-Si atomic interdiffusion in Ge nano-dots and wetting layers has been investigated by DCXRD. It is found that thermal annealing can activate Ge-Si atomic interdiffusion and the interdiffusion in the nano-dots area is much stronger than that in the wetting layer area. Therefore the fluctuation of the Ge layer decreases and the distribution of Ge atoms becomes homogeneous in the horizontal Ge (GeSi actually) layer, which make the width of the 0(th) peak narrow after annealing.

Influence of nitridation time on the morphology of GaN nanorods synthesized by nitriding Ga2O3/ZnO films

Gallium nitride (GaN) nanorods were synthesized by nitriding Ga2O3/ZnO films which were deposited in turn on Si (111) substrates using radio frequency (RF) magnetron sputtering system. In the nitridation process, ZnO was reduced to Zn and Zn sublimated at 950 degrees C. Ga2O3 was reduced to Ga2O and Ga2O reacted with NH3 to synthesize GaN nanorods with the assistance of the sublimation of Zn. The morphology and structure of the nanorods were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). The composition of GaN nanorods was studied by Fourier-transform infrared spectrophotometer (FTIR). The synthesized nanorods is hexagonal wurtzite structured. Nitridation time of the samples has an evident influence on the morphology of GaN nanorods synthesized by this method. (c) 2006 Elsevier B.V. All rights reserved.

Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors

The principle of high-electron-mobility transistor (HEMT) and the property of two-dimensional electron gas (2DEG) have been analyzed theoretically. The concentration and distribution of 2DEG in various channel layers are calculated by numerical method. Variation of 2DEG concentration in different subband of the quantum well is discussed in detail. Calculated results show that sheet electron concentration of 2DEG in the channel is affected slightly by the thickness of the channel. But the proportion of electrons inhabited in different subbands can be affected by the thickness of the channel. When the size of channel lies between 20-25 nm, the number of electrons occupying the second subband reaches the maximum. This result can be used in parameter design of materials and devices.

Growth of ZnO single crystal by chemical vapor transport method

ZnO crystals were grown by CVT method in closed quartz tube under seeded condition. Carbon was used as a transport agent to enhance the chemical transport of ZnO in the growth process. ZnO single crystals were grown by using GaN/sapphire and GaN/Si wafer as seeds. The property and crystal quality of the ZnO single crystals was studied by photoluminescence spectroscopy and X-ray diffraction technique.

Growth of ZnO single crystal by chemical vapor transport method

ZnO crystals were grown by CVT method in closed quartz tube under seeded condition. Carbon was used as a transport agent to enhance the chemical transport of ZnO in the growth process. ZnO single crystals were grown by using GaN/sapphire and GaN/Si wafer as seeds. The property and crystal quality of the ZnO single crystals was studied by photoluminescence spectroscopy and X-ray diffraction technique.

SHEAR-DEFORMATION-POTENTIAL CONSTANT OF THE CONDUCTION-BAND MINIMA OF SI - EXPERIMENTAL-DETERMINATION BY THE DEEP-LEVEL CAPACITANCE TRANSIENT METHOD

The shear-deformation-potential constant XI-u of the conduction-band minima of Si has been measured by a method which we called deep-level capacitance transient under uniaxial stress. The uniaxial-stress (F) dependence of the electron emission rate e(n) from deep levels to the split conduction-band minima of Si has been analyzed. Theoretical curves are in good agreement with experimental data for the S0 and S+ deep levels in Si. The values of XI-u obtained by the method are 11.1 +/- 0.3 eV at 148.9 K and 11.3 +/- 0.3 eV at 223.6 K. The analysis and the XI-u values obtained are also valuable for symmetry determination of deep electron traps in Si.

Coupling of thermocapillary convection and evaporation effect in a liquid layer when the evaporating interface is open to air

The coupling mechanism of thermocapillary convection and evaporation effect in evaporating liquids was studied experimentally. The experiments were carried out to study a thin evaporating liquid layer in a rectangular test cell when the upper surface was open to air. By altering the imposed horizontal temperature differences and heights of liquid layers, the average evaporating rate and interfacial temperature profiles were measured. The flow fields were also visualized by PIV method. For comparison, the experiments were repeated by use of another two non-evaporating liquids to study the influence of evaporation effect. The results reveal evidently the role that evaporation effect plays in the coupling with thermocapillary convection.

A novel method for preparing PEMFC catalytic layers

A novel PEMFC catalytic layer was fabricated by a Nafion-pyrolyzed method, which demonstrated a high performance with a maximum power density of 0.82 W/cm(2) on an electrode prepared by this method. The effects of the heat-treatment temperature and Nation content in the catalyst layer on performance were studied.

Preparation of DNA - Silver nanohybrids in multilayer nanoreactors by in situ electrochemical reduction, characterization, and application

Novel nanocomposite films containing DNA-silver nanohybrids have been successfully fabricated by combined use of the layer-by-layer self-assembly technique and an in situ electrochemical reduction method with the DNA-Ag+ complex as one of the building blocks. UV-vis absorption spectroscopy was employed to monitor the buildup of the multilayer films, which suggested a progressive deposition with almost an equal amount of the DNA-Ag+ complex in each cycle. The following electrochemical reduction of silver resulted in the formation of metal nanoparticles in the film, which was evidenced by the evolution of the intense plasmon absorption band originating from silver. Scanning electron microscopy indicated that the particles formed in the multilayer films possessed good monodispersity and stability, thanks to the surrounding polymers. X-ray photoelectron spectroscopy further confirmed the presence of the main components (such as DNA and metallic silver) of the nanocomposite films. In addition, we show that the size of the metal nanoparticles and the optical property of the film could be readily tuned by manipulating the assembly conditions.