987 resultados para 386
Resumo:
研究了分子束外延生长的覆盖了1nm的InxAl1-xAs(x=0.2,O.3)和3nm的Ino2Gao8As复合应力缓冲层InAs/GaAs自组织量子点(QD)光致发光(PL)特性.加InAlAs层后PL谱红移到1.33μm,室温下基态和第一激发态间的跃迁能级差增加到86meV.高In组份的InAlAs有利于获得较长波长和较窄的半高宽(FWHM).对于覆盖复合应力缓冲层的QD不会使波长和FWHM发生显著变化,但可以使基态和第一激发态间的能级差进一步增大.这些结果归因于InAlAs能够有效的抑制In的偏析,减少应力,使QD保持较高的高度.同时,由于InAlAs具有较高的限制势垒,可以增加基态和第一激发态间的能级差.
Resumo:
High-quality GaN epilayers were consistently obtained using a home-made gas-sourer MBE system on sapphire substrates. Room-temperature electron mobility of the grown GaN film is 300 cm(2)/V s with a background electron concentration as low as 2 x 10(17) cm(-3) The full-width at half-maximum of the GaN (0 0 0 2) double-crystal X-ray rocking curve is 6 arcmin. At low temperature (3.5 K), the FWHM of the: near-band-edge photoluminescence emission line is 10 meV. Furthermore, using piezoelectric effect alone with the high-quality films, two-dimensional electron gas was formed in a GaN/AlN/GaN/sapphire structure. Its room-temperature and low-temperature (77 K) electron mobility is 680 cm(2)/V s and 1700 cm(2)/V s, and the corresponding sheet electron density is 3.2 x 10(13) and 2.6 x 10(13) cm(-2), respectively. (C) 2001 Published by Elsevier Science.
Resumo:
In order to study quantitatively the effects of forced solution on crystal growth, we designed a new set of experimental equipment, in particular, a microchannel mixer was used as crystallization container so that the consumption of protein samples was much reduced and thus an exact syringe pump could be used for precise control of the flow rates. Since the mixer’s section was designed to be rectangular, the solution velocity in its center was steady and constant, and thus repeatable experiments were facilitated. Experimental results showed that the effects of forced solution on protein crystal growth were different under different levels of supersaturation, and new results were obtained for cases of high supersaturation. When the supersaturation is σ = 2.3, with increasing flow rates the growth rates of the lysozyme crystal’s (110) face hardly change when the flow rates are lower than 1300 μm/s, and decrease quickly afterwards. When the flow rate reaches 2000 μm/s, the crystal nearly ceases to grow. When the supersaturation is σ = 2.7, with increasing flow rates the (110) face growth rates increase at the beginning then reach the maximum values at 1700 μm/s – 1900 μm/s and decrease afterwards, approaching zero or so when the flow rate reaches 12000 μm/s. The higher the supersaturation, the larger the flow rate at which the crystal ceases to grow. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Resumo:
This article proposes a new wake oscillator model for vortex induced vibrations of an elastically supported rigid circular cylinder in a uniform current. The near wake dynamics related with the fluctuating nature of vortex shedding is modeled based on the classical van der Pol equation, combined with the equation for the oscillatory motion of the body. An appropriate approach is developed to estimate the empirical parameters in the wake oscillator model. The present predicted results are compared to the experimental data and previous wake oscillator Model results. Good agreement with experimental results is found.