灰盔累枝虫形态学及表膜下纤维系的研究

利用活体观察及蛋白银染色技术对灰盔累枝虫(Epistylisgalea)的形态学及表膜下纤维系进行了研究。该种主要鉴别特征为:活体个员的表膜柔软,虫体充分伸展时呈倒长锥形,体长200—300μm,体宽70—90μm;大核“J”字形,呈纵位。单一伸缩泡,直径21—25μm,背位。纵向纤维细密。口围盘纤维呈网状,与纵向纤维直接相连,并在整体上呈兜网状。与本属其他相近种相比,本种第3咽膜(P3)明显要长,其后1/3超出第1咽膜后继续向下呈弧形弯曲。本文对该种上述特征在分类学上的意义及其与相近种类之间的关系进行了

EE2对稀有鮈鲫和斑马鱼幼鱼体内卵黄蛋白原诱导的比较

利用卵黄蛋白原(Vtg)作为类雌激素污染的生物标志物,比较研究了不同浓度的17α-乙炔基雌二醇(EE2)对斑 马鱼(Brachydanio rerio)和稀有鮈鲫(Gobiocypris rarus)幼鱼体内Vtg的诱导。研究结果表明:5ng/L,20ng/L和100ng/L EE2分别暴露5d后,稀有鮈鲫幼鱼体内的Vtg即可显著诱导,并且其含量随暴露时间的增加而增加,在暴露15d时 达到最大值;而斑马鱼幼鱼虽然100ng/LEE2暴露5d时可显著诱导体内Vtg的生成,但20ng/L EE2在暴露10d后

RESPONSES OF Elodea nuttallii AND Ceratophyllum demersum TO HIGH TEMPERATURE

There were large losses of exotic species Elodea nuttallii during summer in eutrophic lakes of the middle and lower reaches of the Yanatze River, China. To investigate the main causes, the heat tolerance of E. nuttallii was studied and compared with that of native species Ceratopkyllum demersum by using an aquaria system in the laboratory. Under 4500 lx light intensity and 12-h L/12-h D cycle, E. nuttallii cultured in 1/5 Hoaglands solution at 39 degrees C showed a positive growth rate during the first 15 days, and the growth rate was higher than that at 35 degrees C. But after 15 days, the growth rates became negative for those cultured both at 39 and 35 degrees C. However, the growth rate was positive for more than 20 days for those cultured at 25 degrees C. Under the same conditions, the growth rate, productivity and chlorophyll content of E. nuttallii were significantly higher than that of C. demersum. Heat tolerance of E. nuttallii was also stronger than that of C. demersum. The optimal temperature for the growth of the two plants depended on the experimental period: both plants grew at an optimal rate at higher temperature if the experimental period was short; nevertheless the plants achieved optimal growth at a lower temperature if the experiment was conducted for a longer period. At the same light intensity, the heat tolerance of C. demersum in tap water with sediment was markedly stronger than that of E. nuttallii at 39 degrees C. Average growth rate of C. demersum was 4.5 times higher than that of E. nuttallii within 25 days. The positive growth period lasted for less than 25 days for E. nuttallii and for more than 25 days for C. demersum. When they were cultured in 1/5 Hoaglands solution and in tap water with sediment, the growth rate of C. demersum increased from 0.4 to 79.4 mg/d.g fresh weight (FW) within 20 days. E. nuttallii increased from 8.3 to 24.4 mg/d-g FW within 20 days. Both grew better in tap water with sediment than in 1/5 Hoaglands solution. The results demonstrated that the nutritional status of the water other than the high temperature affected the heat tolerance of E. nuttallii during summer. E. nuttallii has great ecological safe risk in China.

Nitrogen vacancy scattering in n-GaN grown by metal-organic vapor phase epitaxy

Electron mobility limited by nitrogen vacancy scattering was taken into account to evaluate the quality of n-type GaN grown by metal-organic vapor phase epitaxy. The nitrogen vacancy scattering potential used for our mobility calculation has to satisfy two requirements: such potential is (1) spatially short range, and (2) finite and not divergent at the vacancy core. A square-well potential was adopted to calculate the mobility, because it satisfies not only these two requirements, but also simplifies the calculation. As a result, the estimated mobility shows a T-1/2 temperature dependence, and is very sensitive to the potential well width. After introducing the nitrogen vacancy scattering, we obtained the best fitting between the calculated and experimental results for our high quality sample, and it was found that the measured mobility is dominated by ion impurity and dislocation scatterings at the low temperatures, but dominated by optical phonon and nitrogen vacancy scatterings at the high temperatures. (C) 2000 American Institute of Physics. [S0003-6951(00)04112-7].

SMS4密码算法的差分故障攻击

SMS4是用于WAPI的分组密码算法,是国内官方公布的第一个商用密码算法.由于公布时间不长,关于它的安全性研究尚没有公开结果发表.该文研究SMS4密码算法对差分故障攻击的安全性.攻击采用面向字节的随机故障模型,并且结合了差分分析技术.该攻击方法理论上仅需要32个错误密文就可以完全恢复出SMS4的128比特种子密钥.因为实际中故障发生的字节位置是不可能完全平均的,所以实际攻击所需错误密文数将略大于理论值;文中的实验结果也验证了这一事实,恢复SMS4的128bit种子密钥平均大约需要47个错误密文.文章结果显示SMS4对差分故障攻击是脆弱的.为了避免这类攻击,建议用户对加密设备进行保护,阻止攻击者对其进行故障诱导.

虚拟城市规划中的多通道整合

将多通道交互用于虚拟环境,研究自然和谐的交互方式已经成为虚拟现实的一个重要研究方向.文中以城市规划为应用背景,融合跟踪器、语音和笔输入,提出概率合一的任务制导多通道整合,并辅以上下文语义;以此为基础,有针对性地设计了多通道交互技术,并依据多通道交互的特性分别进行阐述,实现了自然、高效的多通道虚拟城市规划.

Gas-bearing fluid influx sub-system for gas hydrate geological system in Shenhu Area, Northern South China Sea

Based on the comprehensive interpretation and study of the Neogene fracture system and diapiric structure, it can be concluded that the diapiric structures, high-angle fractures and vertical fissure system are the main gas-bearing fluid influx sub-system for gas hydrate geological system in Shenhu Area, northern South China Sea. The Neogene fractures widely developed in the study area may be classed into two groups: NW (NNW)-trending and NE (NNE)-trending. The first group was active in the Late Miocene, while the second one was active since the Pliocene. The NE (NNE)-trending fractures were characterized by lower activity strength and larger scale, and cut through the sediment layers deposited since the Pliocene. Within the top sediment layers, the high-angle fracture and vertical fissure system was developed. The diapiric structures display various types such as a turtle-back-like arch, weak piercing, gas chimney, and fracture (or crack, fissure). On the seismic profile, some diapiric structures show the vertical chimney pathway whose top is narrow and the bottom is wide, where some ones extend horizontally into pocket or flower-shaped structures and formed the seismic reflection chaotic zones. Within the overlying sediment layers of the diapiric structure, the tree branch, flower-shaped high-angle fractures and vertical fissures were developed and became the pathway and migration system of the gas-bearing fluid influx. In the study area, the diapiric structures indicate a high temperature/over pressure system ever developed. Closely associated and abundant bright-spots show the methane-bearing fluid influx migrated vertically or horizontally through the diapiric structures, high-angle fractures and vertical fissures. In the place where the temperature and pressure conditions were favor for the formation of gas hydrate, the hydrate reservoir deposition sub-system was developed.

La2Zr2O7的增韧及陶瓷纤维的制备

La2Zr2O7是一种近年来才提出的新型热障涂层材料，该材料熔点高，在熔点以下不发生相变，热导率低，抗烧结及没有氧传输发生，这些特点使得它作为一种高温下应用的热障涂层材料越来越引起人们的重视。但是，由于该材料的热膨胀系数和断裂韧性比较低，它的实际应用受到了限制。 在本论文中，使用高压烧结的方法获得了致密化的纳米La2Zr2O7块体材料，并对其断裂韧性和热膨胀系数进行了研究。得到的La2Zr2O7纳米材料的断裂韧性和热膨胀系数分别为1.98MPam1/2和9.6×10-6K-1 (200-1000℃)，这些数值明显高于非纳米的La2Zr2O7陶瓷(断裂韧性和热膨胀系数分别为1.40 MPam1/2 和 9.1×10-6 K-1，该结果表明纳米化是一种提高材料断裂韧性和热膨胀系数的有效方法。在La2Zr2O7纳米粉末中加入8YSZ纳米颗粒，高压烧结后使其颗粒充分生长，在得到的复相化合物中观察到形成了类似棒状晶体的自增韧相，使得复合材料的断裂韧性(1.88 MPam1/2)比La2Zr2O7有所提高，甚至超过了同样条件下制备的8YSZ样品的断裂韧性。 La2Zr2O7的断裂韧性也可以通过在基体中添加BaTiO3铁电材料得到明显的提高。当添加BaTiO3的体积含量达到10vol％时，4.5GPa，1450℃高压烧结10min得到的复合材料断裂韧性达1.98 MPam1/2，明显高于同条件下烧结的La2Zr2O7 (1.60MPam1/2)。应力诱导下BaTiO3的电畴转向是主要的增韧原因。随着BaTiO3颗粒添加的体积含量增加，复相化合物的热膨胀系数也明显提高。当掺杂20vol％BaTiO3时，得到的复合材料平均热膨胀系数达到10.2×10-6K-1 (150~1200℃)。 我们通过在4.5GPa, 1650℃高压烧结5min的方法还获得了掺杂YAG纳米颗粒的La2Zr2O7纳米复相陶瓷。在室温下测量了材料的维氏硬度，并通过压痕裂纹长度计算出了材料的断裂韧性。随着YAG纳米颗粒体积含量的增加，纳米复相陶瓷的断裂韧性和维氏硬度都依次增加，当添加20vol％的YAG纳米颗粒时达到最大，分别为1.93 MPam1/2和11.45GPa。断裂韧性增加的机理可归结为以下三点：一是YAG纳米颗粒的添加提高了La2Zr2O7基体的晶界强度，二是基体晶粒尺寸变化的影响，三是YAG纳米颗粒对裂纹的偏转和钉扎作用。添加微米YAG颗粒的复相化合物因为和纳米复相陶瓷具有不同的增韧机制，因此断裂韧性的变化趋势也不相同，在掺入10vol％的YAG微米颗粒时，复合材料的断裂韧性最大，而后降低，当掺入YAG微米粒子的体积含量达到20vol％时，断裂韧性甚至低于La2Zr2O7。 从20世纪90年代开始，电纺作为一种合成纤维的办法越来越吸引人们的注意。其合成的纤维长度长，直径均匀，并且组成范围很广。最初，电纺只是被用来合成一些有机聚合物的纤维，最近，很多研究组开始致力于使用电纺的方法合成复合纤维或者陶瓷纤维。 在本论文中，我们使用电纺的方法获得了La2Zr2O7纳米纤维和SiC单晶纳米线。1000℃煅烧得到的La2Zr2O7纳米纤维具有烧绿石结构，直径在200~500nm之间。同样的温度煅烧时得到的La2Zr2O7纳米纤维的比表面积要明显高于粉末样品的，表明纤维的抗烧结性能比粉末的高。得到的SiC纳米线直径在50~100nm之间，表面有一约5nm厚的无定形的SiO2薄层。 使用电纺的方法，恰当的控制煅烧条件，我们获得了La2Ce2O7， La2(Zr0.745Ce0.386)2O7.524和8YSZ中空纤维。这种中空结构减小了粒子之间的接触面积，提高了材料的抗烧结性能。在扫描电镜分析的基础上，我们总结了这些中空纤维的形成过程。

丙烯酰胺水溶液辐射聚合 Ⅰ聚合过程中聚合物交联反应机制的探讨 Ⅱ聚丙烯酰胺的溶解 Ⅲ合成在水中易溶或速溶的丙烯酰胺聚合物和共聚物

Ⅰ. 聚合过程中聚合物交联反应机制的探讨 聚丙烯酰胺是水溶性聚合物，但一般工业生产的聚丙烯酰胺在水中很难溶解。一个重要因素是由于在聚合过程中聚合物发生了交联。Minsk (1949)认为聚丙烯酰胺大分子上的-CoNH_2的亚胺化，导致聚合物在水中难溶或不溶：Gleason (1959)和Suen (1960)分别指出活性链的链转移和在丙烯酰胺聚合过程中产生末端双键是聚合物交联的起因：AδkuH (1973)认为丙烯酰胺在浓水溶液中聚合是通过水离子作用生成网状聚合物。由于交联是一个伴随聚合的付反应，少量的交联就导致聚合物不溶，加之缺乏有效的分析手段，所以难于定量研究这一过程。一些科学工作者对交联的性质提出了各种设想，但有关交联方面的系统讨论加交联机制问题至今未见报导。本工作估算了聚丙烯酰胺的内聚能和分子间力（主要－CoNH_2间氢键作用力），说明了丙烯酰胺浓度越大，它的聚合产物越易交联；研究了聚合体系PH值对聚合交联的影响，丙烯酰胺在酸性或中性介质中用r射线引发聚合，很快出现凝胶，只有在碱性(PH > 13)介质中r射线幅照可得到水溶性聚丙烯酰胺。用酰胺基的亲核反应能力解释了原子效应，幅照生成聚合物自由基和双键是聚合物交联的潜在因素，在聚合体系加入链转移剂抗坏血酸，可有效地抑制聚合过程中聚合物的迅速交联；从红外光谱观察到交联聚丙烯酰胺的酰胺特征吸收峰从1650 cm~(-1)向亚胺特征吸收峰方向位移，聚丙烯酰胺的含N量低于理论值，交联聚丙烯酰胺含N量偏离理论值更大，以及不溶聚丙烯酰胺的交联键可以羟高温水解完全破坏，由此肯定聚合过程中聚合物交联具有亚胺结构。根据酰胺基结构特点加亲核取代反应原理，提出丙烯酰胺水溶液辐射聚合过程中聚合物的交联机制如下：1.聚合物自由基的生成。2.自由基促使－CoNH_2活化，导致-CoNH_2间亲核取代反应。3.当R_2 = -CH=CH_2即单体参与亚胺化则导致在分子链上产生悬挂双键，将引起聚合物交联。这一反应机制可以阐明丙烯酰胺水溶液辐射聚合过程中聚合交联起因和历程，可以解释键材剂。质子效应和亚胺之间联系，为制备水溶性聚丙烯酰胺提供了线索。Ⅱ. 聚丙烯酰胺的溶解 关于聚合物溶解理论前人曾从两方面进行探讨。一是Hidebrand (1949)提出以内聚能密度的平方根作为溶度参数δ来鉴别两种物互溶的可能性。Burrel (1955)把这一方法来研究聚合物的溶解。内聚能依赖于色散力、极性力和氢／键，它由三部分组成E = E_d + E_p + E_h，对应的溶度参数方程为δ~2 = δ_d~2 + δ_p~2 + δ_h~2，因此只有两种物质的溶度参数的各个分量相近时，才有可能互溶。这一方面的研究仅涉及溶解过程的热力学。另一是Ueberreiter (1968)提出溶解是一个相互扩散过程。聚合物在溶解过程中，溶解速度S和溶胀层厚度δ处于稳态。它们和溶剂在聚合物中平均扩散系数D-bar_s的关系为2S = D-bar_s/δ，比式直接反映了溶解的动力学过程。聚丙烯酰胺有极强的极性和形成氢键的能力，它只溶于水，对溶度参数的研究存在一定困难。采用扩散原理研究聚丙烯酰按的溶解速度和规律比较有利。为此目地，我们设计制作了专门溶解实验装置，借助聚丙烯酰胺存在电离基因，利用电导测定溶解速度S，并借助针入法则定溶胀层厚度δ和溶胀速度W，发现极性聚丙烯酰胺的溶解不同于Ueberreiter所研究的非极性聚合物聚苯乙烯的溶解。它是一个非稳态过程，不存在诱导期，溶解和溶胀同时进行，根据这事实和理论分析得到2S + W = （D-bar）_s/δ这一关系式与实验数据相符。此关系式可还原Ueberreinter的稳态溶解得到的关系式，并适用于交联聚合物的溶胀。聚丙烯酰胺的-CoNH_2强吸水性导致它在溶解时溶胀形成凝胶层是一个快步骤，而-CoNH_2强的形成氢键能A是溶解的主要障碍，因此溶解是一个慢过程。聚丙烯酰胺的溶解活化能E_s和水在聚合物中扩散活化能E_D都是6干卡／克分子左右；处于氢键离解能范围之内，所以聚丙烯酰胺溶解主要克服分子间氢键作用力。研究了影响聚丙烯酰胺的溶解因素：（1）聚丙烯酰胺单位时间溶解量与它们的颗粒直径2.5次方成反比。（2）聚丙烯酰胺溶解速度与分子量0.5 - 0.7次方成反比。（3）聚丙烯酰胺溶解速度对湿度的依赖关系为S = 0.278 exp[-627o/RT]（4）聚丙烯酰胺大分子中引进-CooNa，吸水性增强，溶解过程双电层形成，产生剪切应力和静电斥力，促使键移动，降低了溶解活化能，加速溶解。（5）聚合物中添加亲水性强的表面活活性剂有利于聚丙烯酰胺的溶解。Ⅲ. 合成在水中易溶或速溶丙烯酰胺聚合物和共聚物 本文强调了在丙烯酰胺水溶液辐射聚合过程中，避免聚合物交联是合成水溶性聚合物的先决条件。加NaOH的丙烯酰胺水溶液聚合和加链转移剂抗坏血酸的丙烯酰胺水溶液聚合物都可得到转化率和分子量都较高，而且不交联的丙烯酰胺的聚合物和共聚物。在单体水溶液中添加尿素对聚合物有助溶效果；添加亲水性强的表面活性剂JFC可改善聚合物颗粒的粘结和抱团。提出了两个聚合体系，合成出在水中速溶的聚丙烯酰胺和羰钠基不同含量的阴离子型 聚丙烯酰胺，聚合物颗粒小于40目，可在10分钟内完成溶解。

稀土铁双核配合物的合成

本文通过LnCl_3·nTHF和[C_5H_4(SiMe_3)]Na反应得到了两类配合物[C_5H_4(SiMe_3)] LnCl_2·nTHF (Ln = Nd，Sm，Gd；n = 0，1，2)、[C_5H_4(SiMe_3)] LnCl_2·HCl·nTHF (Ln = Nd，Sm，Gd；n = 1，2)。通过元素分析、红外分析、质谱、核磁共振和热重分析确定了配合物的分子组成，特别是带氯化氢的产品在红外光谱中有1250 cm~(-1)，835 cm~(-1)，748 cm~(-1)自的三甲基硅基特征吸收峰。对氯化稀上进行了结构分析，结果发现LnCl_3·4THF (Ln = Sm，Gd)是与NdCl_3·4THF之间存在着变态关系。GdCl_3·4THF。晶体属单斜晶系，空间群为P21/C，晶胞参数为a = 30.765(7)，b = 8.219(3)，C = 17.534(3)A~·，β = 93.71(2)°；SmCl_3·4THF。晶体属单斜晶系，空间群为P21/C，晶胞参数为a = 30.921(13)，b = 8.287(7)，C = 17.665(8)，β = 94.17(4)°。LnCl_3·4THF的单位晶胞中存在着八个分子，每对分子互相等同，但每对分子内部两个分子之间互不等同。SmCl_3·2THF·DME晶体属单斜晶系，空间群为P21/a，晶胞参数为a = 13.547(8)，b = 8.607(4)，C = 16.029(9)A°，β = 90.53(5)°。铲原子与三个氯原子。两个四氢呋喃中的氧原子以及DME中的两个氧原子键合，形成七配位的配合物，但是配位多面体不是理想的五角双锥，而是形成了比五角双锥(D_(5h))对称性更低的多面体(C_(3v))。它能看作是在正八面体的一个面的中心加上第七个原子的结果，而且这八面体主要受到决定上述那个面的三个原子伸展开的畸变。在制备C_5H_5SiMe_3时，如果不用减压蒸馏，而在常压下直接蒸馏，则得到的不是C_5H_5SiMe_3而是它的二聚体(C_5H_5SiMe_3)_2。用红外光谱和核磁共振确定了它的组成和结构，特别是在1650 cm~(-1)处出现(C_5H_5SiMe_3)_2的孤立双键吸收峰。用C_5H_5SiMe_3和Ee(CO)_5回流反应制得了[C_5H_4(SiMe_3) Ee(CO)_2]_2。经过元素分析，红外光谱，质谱，顺磁共振确定了配合物的组成，红外光谱中有桥羰基的吸收峰，质谱图中498的离子峰的出现标志着上述二聚体的存在。用[C_5H_5Fe(CO)_2]_2作为制备双金属配合物的原料，用Na/Hg并还原[C_5H_5Fe(CO)_2]_2。反应时间为6-7小时得到中间体[C_5H_5Fe(CO)_2]_2Na·4THF的深紫红色晶体。反应时间加长，中间体被破坏，反应到15小时时生成了[C_5H_5Fe(CO)_2]Na·TMEDA的黄色晶体，特别是中间体的获得及晶体结构的测定对我们解释反应的机理非常重要。[C_5H_5Fe(CO)_2]_2Na·4THF为单斜晶系，空间群为P21/n，晶胞参数为a = 10.155(5)，b = 17.121(4)，C = 18.667(6)A°，β = 97.61(3)°，V = 3216.9A°~3， 2 = 4。铁的配位数为七，钠的配位数为六，钠离子和桥连羰基氧以配位键结合，每个钠离子连结着两个[C_5H_5Fe(CO)_2]_2~-，而每个[C_5H_5Fe(CO)_2]_2~-又连结着两个钠离子，组成一个无限链状分子，键状分子间以Van de W力结合。[C_5H_5Fe(CO)_2]Na·TMEDA正交晶系，空间群为P_(2,2,2,)。晶胞参数为a = 6.001(4)，b = 10.644(6)，C = 24.214(11)A~·。α = β = r = 90°。z = 4 V = 1546·7A°~3，铁的配位数为五。钠的配位数为四，钠离子和羰基氧以配位键结合，每个钠离子连结着两个[C_5H_5Fe(CO)_2]~-，每个[C_5H_5Fe(CO)_2]~-又连结着两个钠离子，体系就是以这种连结方式或正负电荷交替的形式无限螺旋分子，每个链节存在着两个[C_5H_5Fe(CO)_2]Na·TMEDA分子，链节的长度为a轴的轴长，说明螺旋分子以a轴轴长向上平移。用LnCl_3·nTHF和[C_5H_5Fe(CO)_2]Na反应制得了[C_5H_5Fe(CO)_2] LnCl_2·nTHF (Ln = Nd, Sm, Gd; n = 1, 2)，用[C_5H_5Fe(CO)_2] LnCl_2和[C_5H_4(SiMe_3)]Na或用[C_5H-4(SiMe_3)] LnCl_2和[C_5H_5Fe(CO)_2]Na得到[C_5H_5Fe(CO)_2] [C_5H_4(SiMe_3)] LnCl·nTHF (Ln = Nd, Sm, Gd; n = 0, 1, 3)，配合物[C_5H_5Fe(CO)_2] LnCl_2·nTHF及[C_5H_5Fe(CO)_2] [C_5H_4(SiMe_3)] LnCl·nTHF中存在着2000 cm~(-1)左右的终端羰基吸收峰及1766 cm~(-1)左右的桥连羰基吸收峰。说明稀土和铁之间是以羰基相连的。在TOTOE质谱仪上，配合物[C_5H_5Fe(CO)_2]Gd~·Cl·THF出现[C_5H_5Fe(CO)]GdCl_2、[Fe(CO)_2] Gd~+Cl_2的离子峰，配合物[C_5H_5Fe(CO)_2]-[C_5H_4(SiMe_3)] GdCl·THF出现[C_5H_5Fe(CO)_2] [C_5H_4]Gd~+Cl、[C_5H_5Fe(CO)_2]Gd~+Cl·[C_5H_4C(SiMe_3)] Gd~+Cl等离子峰。所有稀土有机配合物都溶于四氢呋喃、苯，对空气和水敏感。

Exciton states in isolated quantum wires

The exciton states in isolated and semi-isolated quantum wires are studied. It is found that the image charges have a large effect on the effective Coulomb potential in wires. For the isolated wire the effective potential approaches the Coulomb potential in vacuum at large z distance. For the semi-isolated wire the effective potential is intermediate between the Coulomb potential in vacuum and the screened Coulomb potential at large distance. The exciton binding energy in the isolated wire is about ten times larger than that in the quantum well, and that in the semi-isolated wire is also intermediate between those in the isolated wire and in the quantum well. When the lateral width increases the binding energy decreases further, and approaches that in the quantum well. The real valence-band structure is taken into account, the exciton wave functions of the ground state in the zero-order approximation are given, and the reduced mass is calculated. The effect of the coupling between the ground and excited states are considered by the degenerate perturbation method, and it is found the coupling effect is small compared to the binding energy.

Epitaxial growth on 4H-SiC by TCS as a silicon precursor

Epitaxial growth on n-type 4H-SiC 8°off-oriented substrates with a size of 10 × 10 mm~2 at different tem-peratures with various gas flow rates has been performed in a horizontal hot wall CVD reactor, using trichlorosilane (TCS) as a silicon precursor source together with ethylene as a carbon precursor source. The growth rate reached 23 μm/h and the optimal epilayer was obtained at 1600 ℃ with a TCS flow rate of 12 sccm in C/Si of 0.42, which has a good surface morphology with a low RMS of 0.64 nm in an area of 10 × 10μm~2. The homoepitaxial layer was oh-tained at 1500 ℃ with low growth rate (< 5μm/h) and the 3C-SiC epilayers were obtained at 1650 ℃ with a growth rate of 60-70μm/h. It is estimated that the structural properties of the epilayers have a relationship with the growth temperature and growth rate. Silicon droplets with different sizes are observed on the surface of the homoepitaxial layer in a low C/Si ratio of 0.32.