Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11(2)over-bar2) GaN templates

We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs) that grew uniformly inclined towards the patterned, semi-polar GaN( 112̄ 2 ) substrate surface by molecular beam epitaxy. For the practical realization of the tomographic experiment, the nanocolumn axis has been aligned parallel to the rotation axis of the electron microscope goniometer. The tomographic reconstruction allows for the determination of the three-dimensional indium distribution inside the nanocolumns. This distribution is strongly interrelated with the nanocolumn morphology and faceting. The (In,Ga)N layer thickness and the indium concentration differ between crystallographically equivalent and non-equivalent facets. The largest thickness and the highest indium concentration are found at the nanocolumn apex parallel to the basal planes.

High bandwidth freestanding semipolar (11–22) InGaN/GaN light-emitting diodes

Freestanding semipolar (11–22) indium gallium nitride (InGaN) multiplequantum-well light-emitting diodes (LEDs) emitting at 445 nm have been realized by the use of laser lift-off (LLO) of the LEDs from a 50- m-thick GaN layer grown on a patterned (10–12) r -plane sapphire substrate (PSS). The GaN grooves originating from the growth on PSS were removed by chemical mechanical polishing. The 300 m × 300 m LEDs showed a turn-on voltage of 3.6 V and an output power through the smooth substrate of 0.87 mW at 20 mA. The electroluminescence spectrum of LEDs before and after LLO showed a stronger emission intensity along the [11–23]InGaN/GaN direction. The polarization anisotropy is independent of the GaN grooves, with a measured value of 0.14. The bandwidth of the LEDs is in excess of 150 MHz at 20 mA, and back-to-back transmission of 300 Mbps is demonstrated, making these devices suitable for visible light communication (VLC) applications.

Souw Gan Tjiang atawa Pemboenoeh jang Samar-Soewatoe tjerita jang belon brapa lama betoel-betoel soedah kedjadian di Djawa Tengah v. 01

1st print

Souw Gan Tjiang atawa Pemboenoeh jang Samar-Soewatoe tjerita jang belon brapa lama betoel-betoel soedah kedjadian di Djawa Tengah v. 01

1st print

Power converters in WBG device technology for automotive applications and characterization setups for GaN power transistors

This PhD dissertation envisages the design of innovative power converters exploiting WBG devices to get state-of-the-art performance in products intended for industrial applications of automotive field. The collaborations with different specialized companies, provided the opportunity to access commercially-available state-of-the-art SiC and GaN technologies and the possibility to realize innovative converter prototypes. Concerning SiC technology, the complete design of a $350kW$ Battery Emulator instrument in collaboration with a company leader in the automotive testing sector, was carried out from scratch exploiting state-of-the-art SiC power-modules, planar magnetics and top-notch MCU technologies. Discrete high-voltage GaN switches were exploited in the Power Supplies design for automotive charger application to target improved performances compared to the market state-of-the-art. Specifically, two high-efficiency prototypes, an AC/DC converter and a DC/DC converter of $7.5kW$, have been realized for this purpose. To further investigate the characteristics of state-of-the-art GaN power devices two measurement set-ups have been designed. In particular, the trapping phenomenon causing the collapse of drain current during ON-state with a consequent degradation of ON-resistance has been analyzed.

Long-term reliability of power GaN HEMTS

The world is quickly changing, and the field of power electronics assumes a pivotal role in addressing the challenges posed by climate change, global warming, and energy management. The introduction of wide-bandgap semiconductors, particularly gallium nitride (GaN), in contrast to the traditional silicon technology, is leading to lightweight, compact and evermore efficient circuitry. However, GaN technology is not mature yet and still presents reliability issues which constrain its widespread adoption. Therefore, GaN reliability is a hotspot for the research community. Extensive efforts have been directed toward understanding the physical mechanisms underlying the performance and reliability of GaN power devices. The goal of this thesis is to propose a novel in-circuit degradation analysis in order to evaluate the long-term reliability of GaN-based power devices accurately. The in-circuit setup is based on measure-stress-measure methodology where a high-speed synchronous buck converter ensures the stress while the measure is performed by means of full I-V characterizations. The switch from stress mode to characterization mode and vice versa is automatic thanks to electromechanical and solid-state relays controlled by external unit control. Because these relays are located in critical paths of the converter layout, the design has required a comprehensive study of electrical and thermal problems originated by the use of GaN technology. In addition, during the validation phase of the converter, electromagnetic-lumped-element circuit simulations are carried out to monitor the signal integrity and junction temperature of the devices under test. However, the core of this work is the in-circuit reliability analysis conducted with 80 V GaN HEMTs under several operating conditions of the converter in order to figure out the main stressors which contribute to the device's degradation.

Design e simulazione di un convertitore DC-DC per applicazioni automotive implementato mediante tecnologia GaN

L’obiettivo dell’elaborato è quello di presentare una soluzione di collegamento ed interfacciamento tra il supercondensatore (SC) dell’HESS (sistema ibrido di accumulo dell’energia situato all’interno di un veicolo elettrico) e il DC-link (bus che fornisce la potenza necessaria all’inverter che pilota il motore elettrico) attraverso un convertitore DC-DC ad alta efficienza che utilizzi tecnologie di potenza al nitruro di gallio (GaN). Il convertitore presentato è un convertitore DC-DC bidirezionale in configurazione Half-Bridge, esso dovrà funzionare in modalità Boost, ogni qualvolta il motore richieda energia extra dal SC, in modalità Buck per ricaricare il SC durante la frenata rigenerativa. In seguito ad un’introduzione ai veicoli elettrici, alla loro architettura e al perché il SC è così fondamentale, verrà presentata una breve introduzione ai convertitori di potenza (Capitolo 1). Si passerà poi alla presentazione delle tecnologie GaN mostrando come esse rappresentino il futuro dell’elettronica di potenza grazie ai loro numerosi vantaggi (Capitolo 2). Nel capitolo 3 si entrerà nel vivo della progettazione, è qui che sarà progettata ed implementata la soluzione proposta. Verrà effettuata una prima simulazione del circuito, tenendo conto degli effetti parassiti dei soli componenti, attraverso l’ausilio del software LTSpice. Il Capitolo 4 prevede una breve introduzione alle tecniche di layout, utili nella costruzione del circuito stampato presentata all’interno del medesimo capitolo. Il PCB sarà modellato mediante un secondo software denominato KiCAD. Infine, nel Capitolo 5, si procederà con la simulazione elettromagnetica del circuito stampato, essa permetterà di individuare gli effetti parassiti dovuti alle non idealità del layout e di mostrare l’effettiva differenza di efficienza tra un caso semi-ideale e un caso semi-reale.

Implementazione di un sistema di controllo atto a ottimizzare l’efficienza di convertitori DC-DC impiegati in ambito Automotive e realizzati con tecnologia GaN

Lo scopo del presente progetto di ricerca è quello di dimostrare quelli che potrebbero essere i miglioramenti nell’adottare tecnologie GaN nei convertitori di potenza, soffermandosi sull’ambito Automotive. Si è dunque progettato, simulato ed infine analizzato un sistema di conversione bidirezionale DC-DC. Le prestazioni ottime sono state poi raggiunte attraverso l’introduzione di un sistema di controllo in grado di garantire, in ogni condizione, il miglior funzionamento possibile che garantisca il soddisfacimento delle richieste da parte del veicolo. Questo consentirà quindi di gestire il funzionamento del convertitore sia nelle fasi di scarica che in quelle di rigenerazione (regenerative braking). Al convertitore, è stato introdotto anche un controllo adattivo per la ricerca del dead-time ottimo dei segnali di pilotaggio dei transistor.

The Applicability Of Ordered Mesoporous Sba-15 And Its Hydrophobic Glutaraldehyde-bridge Derivative To Improve Ibuprofen-loading In Releasing System.

The mesoporous SBA-15 silica with uniform hexagonal pore, narrow pore size distribution and tuneable pore diameter was organofunctionalized with glutaraldehyde-bridged silylating agent. The precursor and its derivative silicas were ibuprofen-loaded for controlled delivery in simulated biological fluids. The synthesized silicas were characterized by elemental analysis, infrared spectroscopy, (13)C and (29)Si solid state NMR spectroscopy, nitrogen adsorption, X-ray diffractometry, thermogravimetry and scanning electron microscopy. Surface functionalization with amine containing bridged hydrophobic structure resulted in significantly decreased surface area from 802.4 to 63.0 m(2) g(-1) and pore diameter 8.0-6.0 nm, which ultimately increased the drug-loading capacity from 18.0% up to 28.3% and a very slow release rate of ibuprofen over the period of 72.5h. The in vitro drug release demonstrated that SBA-15 presented the fastest release from 25% to 27% and SBA-15GA gave near 10% of drug release in all fluids during 72.5 h. The Korsmeyer-Peppas model better fits the release data with the Fickian diffusion mechanism and zero order kinetics for synthesized mesoporous silicas. Both pore sizes and hydrophobicity influenced the rate of the release process, indicating that the chemically modified silica can be suggested to design formulation of slow and constant release over a defined period, to avoid repeated administration.

Low-density Three-dimensional Foam Using Self-reinforced Hybrid Two-dimensional Atomic Layers.

Low-density nanostructured foams are often limited in applications due to their low mechanical and thermal stabilities. Here we report an approach of building the structural units of three-dimensional (3D) foams using hybrid two-dimensional (2D) atomic layers made of stacked graphene oxide layers reinforced with conformal hexagonal boron nitride (h-BN) platelets. The ultra-low density (1/400 times density of graphite) 3D porous structures are scalably synthesized using solution processing method. A layered 3D foam structure forms due to presence of h-BN and significant improvements in the mechanical properties are observed for the hybrid foam structures, over a range of temperatures, compared with pristine graphene oxide or reduced graphene oxide foams. It is found that domains of h-BN layers on the graphene oxide framework help to reinforce the 2D structural units, providing the observed improvement in mechanical integrity of the 3D foam structure.

The Atomic Structure Of A Bare Buffer Layer On Sic(0001) Chemically Resolved.

A chemical-specific photoelectron diffraction structure determination of a carbon rich buffer layer on SiC is reported. In addition to the long-range ripple of this surface, a local buckling in the hexagonal sublattice, which breaks the local range order symmetry, was unraveled.

Avaliação por SAXS e DSC das interações entre H2O e Renex-100

The aggregation behavior of the non-ionic surfactant Renex-100 in aqueous solutions and mesophases was evaluated by SAXS in a wide range of concentrations, between 20 and 30 °C. Complementary, water interactions were defined by DSC curves around 0°C. SAXS showed that the system undergoes the following phase transitions, from diluted to concentrated aqueous solutions: 1) isotropic solution of Renex aggregates; 2) hexagonal mesophase; 3) lamellar mesophase; and 4) isotropic solution. DSC analysis indicated the presence of interfacial water above 70wt%, which agreed with the segregation of free water to form the structural mesophases observed by SAXS bellow this concentration.

Regimes de precipitação na América do Sul: uma revisão bibliográfica

Como a América do Sul se estende por diferentes latitudes e possui formas de relevo variadas, proporciona a atuação e o desenvolvimento de diferentes sistemas atmosféricos, os quais contribuem para a não homogeneidade climática da região. Portanto o objetivo deste estudo é apresentar uma revisão dos sistemas atmosféricos que atuam nos diferentes setores do continente sul-americano e que contribuem para a precipitação.