897 resultados para Precarious Progress


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Metallic silicides have been used as contact materials on source/drain and gate in metal-oxide semiconductor (MOS) structure for 40 years. Since the 65 nm technology node, NiSi is the preferred material for contact in microelectronic due to low resistivity, low thermal budget, and low Si consumption. Ni(Pt)Si with 10 at.% Pt is currently employed in recent technologies since Pt allows to stabilize NiSi at high temperature. The presence of Pt and the very low thickness (<10 nm) needed for the device contacts bring new concerns for actual devices. In this work, in situ techniques [X-ray diffraction (XRD), X-ray reflectivity (XRR), sheet resistance, differential scanning calorimetry (DSC)] were combined with atom probe tomography (APT) to study the formation mechanisms as well as the redistribution of dopants and alloy elements (Pt, Pd.) during the silicide formation. Phenomena like nucleation, lateral growth, interfacial reaction, diffusion, precipitation, and transient phase formation are investigated. The effect of alloy elements (Pt, Pd.) and dopants (As, B.) as well as stress and defects induced by the confinement in devices on the silicide formation mechanism and alloying element redistribution is examined. In particular APT has been performed for the three-dimensional (3D) analysis of MOSFET at the atomic scale. The advances in the understanding of the mechanisms of formation and redistribution are discussed. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Genetically improved transgenic fish possess many beneficial economic traits; however, the commercial aquaculture of transgenic fish has not been performed till date. One of the major reasons for this is the possible ecological risk associated with the escape or release of the transgenic fish. Using a growth hormone transgenic fish with rapid growth characteristics as a subject, this paper analyzes the following: the essence of the potential ecological risks posed by transgenic fish; ecological risk in the current situation due to transgenic fish via one-factor phenotypic and fitness analysis, and mathematical model deduction. Then, it expounds new ideas and the latest findings using an artificially simulated ecosystem for the evaluation of the ecological risks posed by transgenic fish. Further, the study comments on the strategies and principles of controlling these ecological risks by using a triplold approach. Based on these results, we propose that ecological risk evaluation and prevention strategies are indispensable important components and should be accompanied with breeding research in order to provide enlightments for transgenic fish breeding, evaluation of the ecological risks posed by transgenic fish, and development of containment strategies against the risks.

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Microbial crusts are attracting much interest in view of their possible uses in environmental conservation and ecological restoration of the and and semiarid regions. Because algae play an irreplaceable important role in the early formation and the strengthening of microbial crusts, they are paid much more attention to than other cryptogams. In this paper, an overview of the current knowledge on the fine structure and development of microbial crust, focusing on the algal biomass, vertical distribution, succession, influential factors on algae, cohesion of soil stabilization, cementing mechanism for soil particles and the microalgal extracellular polymers is given, with particular emphasis on the authors' researches, and some prospects are put forward as well.

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The genome of aquatic animals is poorly understood and information from different taxonomic groups is sketchy. While there have been intensive genomic studies on some fish models, investigations on other fishes and invertebrates have been scarce. Yet there are recently some coordinated studies on genome mapping in a number of aquaculture animals of economic importance. This review summarizes information available on genome mapping of the important fish models and aquaculture animals. The future perspectives of this field of studies are discussed.

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A review is presented on recent research development of self-organized Ge/Si quantum dots (QDs). Emphasis is put on the morphological evolution of the Ge quantum dots grown on Si (001) substrate, the structure analysis of multilayer Ge QDs, the optical and electronic properties of these nanostructures, and the approaches to fabricating ordered Ge quantum dots.

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Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and nonlinear optical effect. Due to its advantages of less crystal defects and relatively simpler fabrication technology, this material may be of important value in the research of future nanoelectronic device. In the order of vertical transport, lateral transport and charge storage, recent advances in the electronic properties of this material are brefly introduced, and the problems and perspectives are analyzed.

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The novel material of photonic crystal makes it possible to control a photon, and the photonic integration will have breakthrough progress due to the application of photonic crystal. It is based on the photonic crystal device that the photonic crystal integration could be realized. Therefore, we should first investigate photonic crystal devices based on the active and the passive semiconductor materials, which may have great potential application in photonic integration. The most practical and important method to fabricate two-dimensional photonic crystal is the micro-manufacture method. In this paper, we summarize and evaluate the fabrication methods of two-dimensional photonic crystal in near-infrared region, including electron beam lithography, selection of mask, dry etching, and some works of ours. This will be beneficial to the study of the photonic crystal in China.

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Proceeding from the consideration of the demands from the functional architecture of high speed, high capacity optical communication network, this paper points out that photonic integrated devices, including high speed response laser source, narrow band response photodetector high speed wavelength converter, dense wavelength multi/demultiplexer, low loss high speed response photo-switch and multi-beam coupler are the key components in the system. The, investigation progress in the laboratory will be introduced.

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Si-based nanomaterials are some new photoeletronic and informational materials developed rapidly in recent years, and they have potential applications in the light emitting devices, e. g. Si light emitting diode, Si laser and integrated Si-based photoelectronics. Among them are nano-scale porous silicon (ps), Si nanocrystalline embedded SiO2 (SiOx, x < 2.0) matrices, Si nanoquantum dot and Si/SiO2 superlattice, etc. At present, there are various indications that if these materials can achieve efficient and stable luminescence, which are photoluminescence (PL) and electroluminescence (EL), it is possible for them to lead to a new informational revolution in the early days of the 21st century. In this article, we will mainly review the progress of study on Si-based nanomaterials in the past ten years. The involved contents are the fabricated methods, structural characterizations and light emitting properties. Finally, we predicate the developed tendency of this field in the following ten years.

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This paper is a review of research and development on semiconductor materials, which covers main scientific activities in this field. The present status acid future prospects of studies on semiconductor materials, such as silicon crystals, GaAs related III-V compound semiconductor materials and GaAs, InP and silicon based quantum well and superlattice materials, quantum wires and quantum dots materials, microcavity and photonic crystals, materials for quantum computation and wide band gap materials, are briefly discussed.

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