Electrochemical photovoltaic cells CdSe thin film electrodes : final report, June 1979-June 1980 /

"Contract No. AC02-77CH00178."

Industrial hygiene characterization of the photovoltaic solar cell industry /

Mode of access: Internet.

Photovoltaic central power plants : some new evaluations on the basis of revised insolation data /

"July 1978."

High voltage thermionic converters. Prepared under Contract no. AF33(615)-1533

"Project no. 8173, Task no. 817305."

Investigation of silicon photocells as converters of solar radiation (Issledovaniye kremniyevykh fotoelementov kak preobrazovately solnechnogo izlucheniya)

"This translation was prepared under the auspices of the Liaison Office, Technical Information Center, Wright-Patterson AFB, Ohio."

Direct energy conversion in the USSR: thermionic converters. Comprehensive report (3rd in the series)

Photocopy.

An automated photovoltaic system for the measurement of resistivity variations, in high-resistivity circular silicon slices /

Includes bibliographical references.

Demonstration of photovoltaic power source in remote applications : lighting, weather data gathering and public demonstration systems : Wildlife Prairie Park, Peoria, Illinois.

"Printed: May 1990."

Direct support and general support maintenance manual (including repair parts and special tools list) : converters, telegraph-telephone signal CV-425/U, (part of terminal telegraph-telephone AN/TCC-29).

Includes index.

Organizational and direct support maintenance repair parts and special tools list for converters telephone signal, CV-1918A(V)1/G, (NSN 5895-00-504-9103), CV-1918A(V)2/G, (NSN 5805-00-504-9107) and CV-1918A(V)3/G, (NSN 5805-00-137-7674).

Includes index.

Direct support and general support maintenance repair parts and special tools lists (including depot maintenance repair parts and special tools) for converters, frequency, electronic, CV-3084/MSC-46(V) (NSN 5895-00-100-4314) and CV-3084A/MSC-46(V) (NSN 5895-00-614-9593).

Includes index.

Variable Step Maximum Power Point Tracking for Photovoltaic Modules with Embedded Temperature Sensing

Thesis (Master's)--University of Washington, 2016-06

A PbS quantum-cube: conducting polymer composite for photovoltaic applications

We have developed a new non-polar synthesis for lead sulfide (PbS) quantum-cubes in the conjugated polymer poly-2-methoxy, 5-(2-ethyl-hexyloxy-p-phenylenevinylene) MEH-PPV. The conducting polymer acts to template and control the quantum-cube growth. Transmission electron microscopy of the composites has shown a bimodal distribution of cube sizes between 5 and 15 nm is produced with broad optical absorption from 300 to 650 nm. Photoluminescence suggests electronic coupling between the cubes and the conducting polymer matrix. The synthesis and initial characterization are presented in this paper. (C) 2003 Elsevier B.V. All rights reserved.

Entanglement and the Einstein-Podolsky-Rosen paradox with coupled intracavity optical down-converters

We show that two evanescently coupled χ((2)) parametric down-converters inside a Fabry-Perot cavity provide a tunable source of quadrature squeezed light, Einstein-Podolsky-Rosen (EPR) correlations and quantum entanglement. Analyzing the operation in the below threshold regime, we show how these properties can be controlled by adjusting the coupling strengths and the cavity detunings. As this can be implemented with integrated optics, it provides a possible route to rugged and stable EPR sources.

Experimental investigation of interface states and photovoltaic effects on the scanning capacitance microscopy measurement for p-n junction dopant profiling

Controlled polishing procedures were used to produce both uniformly doped and p-n junction silicon samples with different interface state densities but identical oxide thicknesses. Using these samples, the effects of interface states on scanning capacitance microscopy (SCM) measurements could be singled out. SCM measurements on the junction samples were performed with and without illumination from the atomic force microscopy laser. Both the interface charges and the illumination were seen to affect the SCM signal near p-n junctions significantly. SCM p-n junction dopant profiling can be achieved by avoiding or correctly modeling these two factors in the experiment and in the simulation. (c) 2005 American Institute of Physics.