Luminescence studies of Ce : YAG using vacuum ultraviolet synchrotron radiation

Photoluminescence spectrum of Ce:YAG single crystal was studied employing vacuum ultraviolet (VUV) synchrotron radiation. Intrinsic absorption edge at about 52,000 cm(-1) was observed in the absorption spectrum. From the VUV excitation spectrum, the energy of the highest d-component of 53,191 cm(-1) (188 nm) for the Ce3+ ions in YAG was obtained at 300 K. The disappearance of the third 5d level at 37,735 cm(-1) (265 nm) in absorption and excitation spectra in our samples may be due to the impurity Fe3+ ions absorption. (C) 2006 Elsevier Ltd. All rights reserved.

Color centers and charge state change in Ce : YAG crystals grown by temperature gradient techniques

Color centers and impurity defects of Ce:YAG crystals grown in reduction atmosphere by temperature gradient techniques have been investigated by means of gamma irradiation and thermal treatments. Four absorption bands associated with color centers or impurity defects at 235, 255, 294 and 370 nm were observed in as-grown crystals. Changes in optical intensity of the 235 and 370 nm bands after gamma irradiation indicate that they are associated with F+-type color center. Charge state change processes of Fe3+ impurity and Ce3+ ions take place in the irradiation process. The variations of Ce3+ ions concentration clearly indicate that Ce4+ ions exist in Ce:YAG crystals and gamma irradiations could increase the concentration of Ce3+ ions. Annealing treatments and the changes in optical density suggest that a heterovalent impurity ion associated with the 294 nm band seems to be present in the crystals. (c) 2005 Elsevier B.V. All rights reserved.

Color centers and charge state recharge in gamma-irradiated Yb : YAP

Gamma-ray irradiation induced color centers and charge state recharge of impurity and doped ion in 10 at.% Yb:YAP have been studied. The change in the additional absorption (AA) spectra is mainly related to the charge exchange of the impurity Fe2+, Fe3+ and Yb3+ ions. Two impurity color center bands at 255 and 313 nm were attributed to Fe3+ and Fe2+ ions, respectively. The broad AA band centered at 385 nm may be associated with the cation vacancies and F-type center. The transition Yb3+ -> Yb2+ takes place in the process of gamma-irradiation. Oxygen annealing and gamma-ray irradiation lead to an opposite effect on the absorption properties of the Yb:YAP crystal. In the air annealing process, the transition Fe2+ -> Fe3+ and Yb2+ -> Yb3+ take place and the color centers responsible for the 385 nm band was destroyed. (c) 2005 Elsevier B.V. All rights reserved.

Color centers in Yb : YAG crystals grown by temperature-gradient techniques

Yb: YAG (Yb: Y3Al5O12) crystals have been grown by temperature-gradient techniques (TGT) and their color centers and impurity defects were investigated by means of gamma irradiations and thermal treatment. Two color centers located at 255 and 290 nm were observed in the as-grown TGT-Yb: YAG. Analysis shows that the 255 nm band may be associated with Fe3+ ions. Absorption intensity changes of the 290 nm band after gamma irradiation and thermal treatment indicate that this band may be associated with oxygen-vacancy defects. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Cooperative and charge transfer luminescence in Yb3+ -doped yttrium aluminum perovskite (YAlO3)

YAlO3 (YAP) crystals with different Yb3+ concentration have been grown by Czochralski method and cooperative fluorescence of Yb3+ ions in YAP crystal was studied under 940-nm infrared (IR) LD excitation at room temperature. The Yb concentration dependence of absorption intensity of IR and charge transfer bands exhibit different features. The green emission band in the region of 480-520nm was assigned to the cooperative deexcitation of two Yb3+ ions. The remaining upconverted emission bands containing various sharp peaks associated with impurity ions were observed and discussed. Charge transfer luminescence of heavily doped 20at% Yb:YAP is strongly temperature dependent and no concentration quenching of the charge transfer luminescence was found through the investigation of different Yb levels samples. (c) 2006 Elsevier B.V. All rights reserved.

Synthesis and characterization of room-temperature ferromagnetism in Fe- and Ni-co-doped In2O3

Observation of room-temperature ferromagnetisin in Fe- and Ni-co-doped In2O3 samples (In0.9Fe0.1-xNix)(2)O-3 (0 <= x <= 0.1) prepared by citric acid sol-gel auto-igniting method is reported. All of the samples with intermediate x values are ferromagnetic at roomtemperature. The highest saturation magnetization (0.453 mu B/Fe + Ni ions) moment is reached in the sample with x = 0.04. The highest solubility of Fe and Ni ions in the In2O3 lattice is around 10 and 4 at%, respectively. The 10 at% Fe-doped sample is found to be weakly ferromagnetic, while the 10at% Ni-doped sample is paramagnetic. Extensive structure including Extended X-ray absorption fine structure (EXAFS), magnetic and magneto-transport including Hall effects studies on the samples indicate the observed ferromagnetism is intrinsic rather than from the secondary impurity phases. (c) 2007 Elsevier Ltd. All rights reserved.

Spectroscopic properties of Ce : YAP scintillation crystal grown by temperature gradient technique

Spectroscopic properties of Ce-doped yttrium orthoaluminate (Ce:YAlO3 or Ce:YAP) crystals grown by temperature gradient technique (TGT) were investigated, and the effects of the growth conditions on the properties were analyzed.. Methods of optical absorption (OA), photoluminescence (PL), photoluminescence decay (PLD), X-ray excited luminescence (XL) and cathodeluminescence (CL) were used in these investigations. The results showed that the absorption band peak at 202, 394 and 532 nm originated from F and F+ color center induced by the weak reducing growth atmosphere, green emission band near 500 ran derived from Ce3+ -Ce3+ pairs and band at 650 similar to 850 run from some unintentional impurity in crystals.

Visible luminescence in Yb3+-doped gadolinium gallium garnets

In this paper, some results on visible luminescence performed on Yb3+-doped gadolinium gallium garnets under 165 and 940 nm excitation were presented. The upconversion luminescence was ascribed to Yb3+ cooperative luminescence and the presence of rare earth impurity ions. The gain cross-sections of Yb:GGG crystal as a function of excited-state population fraction P were studied. Emission spectra under 165 nm at 20 K showed there was no charge transfer luminescence in Yb:GGG. (c) 2006 Elsevier B.V. All rights reserved.

HfO2 膜料中的杂质对薄膜损伤及性能的影响

By analysis of impurity elements in HfO2 coating material, the influence of main impurity elements on the characteristic of coatings were studied. The results indicate that the metal elements and absorptive dielectric elements damage the HfO2 coatings. The more the Zr element content is, the more the absorption is for the coatings in ultraviolet wave. The negative ion element will become the gas source center and form an ejection in the process of evaporation of coating material, so decrease the damage threshold of the coatings.

微缺陷对薄膜滤光片环境稳定性的影响

用热蒸发方法沉积了薄膜滤光片．并将样品分别在去离子水中浸泡10天和30天．通过分光光度计、光学暗场显微镜、及扫描电子显微镜等多种测试手段，对诱导透射滤光片在潮湿环境下的稳定性进行了研究．实验发现，在潮湿环境下滤光片产生的膜层分离都是从薄膜中微缺陷点处开始发生和发展的，微缺陷是影响滤光片环境稳定性的重要原因之一，其中杂质和针孔是滤光片中两种最常见的微缺陷．EDS能谱分析进一步表明，薄膜中杂质缺陷成分即为Al2O3膜料本身，所以不能推测，薄膜沉积中的喷溅可能是微缺陷产生的根本原因，抑制喷溅可以有效提高薄膜滤光

Influence of negative ion element impurities on laser induced damage threshold of HfO2 thin film

Negative ion element impurities breakdown model in HfO2 thin film was reported in this paper. The content of negative ion elements were detected by glow discharge mass spectrum analysis (GDMS); HfO2 thin films were deposited by the electron-beam evaporation method. The weak absorption and laser induced damage threshold (LIDT) of HfO2 thin films were measured to testify the negative ion element impurity breakdown model. It was found that the LIDT would decrease and the absorption would increase with increasing the content of negative ion element. These results indicated that negative ion elements were harmful impurities and would speed up the damage of thin film. (c) 2006 Elsevier B.V. All rights reserved.

负离子元素杂质破坏模型

探讨了HfO2薄膜中负离子元素杂质破坏模型，并得出薄膜中的杂质主要来源于镀膜材料。用电子束蒸发方法沉积两种不同Cl元素古量的HfO2薄膜，测定薄膜弱吸收和损伤阈值来验证负离子元素破坏模型。结果表明，随着Cl元素含量的增加薄膜的弱吸收增加损伤阈值减小。这主要是因为负离子元素在蒸发过程中形成挥发性的气源中心而产生缺陷，缺陷在激光辐照过程中又形成吸收中心．因此负离子元素的存在将加速薄膜的破坏。

脉冲激光辐照光学薄膜的缺陷损伤模型

建立了缺陷吸收升温致薄膜激光损伤模型，该模型从热传导方程出发，考虑了缺陷内部的温度分布以及向薄膜的传导过程，通过引入散射系数简化了Mie散射理论得出的吸收截面．对电子束蒸发沉积的ZrO2：Y2O3单层膜进行了激光破坏实验，薄膜样品的损伤是缺陷引起的，通过辉光放电质谱法对薄膜制备材料的纯度分析发现材料中的主要杂质元素为铂，其含量为0．9％．利用缺陷损伤模型对损伤过程进行了模拟，理论模型和实验结果取得了较好的一致性．

真空室内金属杂质污染对光学薄膜性能的影响

真空室内金属粒子污染是降低激光薄膜性能的一个重要因素。采用高真空残余气体分析仪,对薄膜沉积过程中的气氛进行分析。发现由黄铜制作的加热灯架在工作时会分解出Zn,在这种条件下沉积薄膜,会使薄膜中掺入金属杂质,导致薄膜激光破坏阈值降低。采用表面分析技术对薄膜的组分进行分析,证实薄膜中锌杂质的存在。激光破坏实验证明,含有锌杂质的薄膜的破坏阈值明显降低。

Influence of different substrates on laser induced damage thresholds at 1064 nm of Ta2O5 films

Ta2O5 films are prepared on Si, BK7, fused silica, antireflection (AR) and high reflector (HR) substrates by electron beam evaporation method, respectively. Both the optical property and laser induced damage thresholds (LIDTs) at 1064 nm of Ta2O5 films on different substrates are investigated before and after annealing at 673 K for 12h. It is shown that annealing increases the refractive index and decreases the extinction index, and improves the O/Ta ratio of the Ta2O5 films from 2.42 to 2.50. Moreover, the results show that the LIDTs of the Ta2O5 films are mainly correlated with three parameters: substrate property, substoichiometry defect in the films and impurity defect at the interface between the substrate and the films. Details of the laser induced damage models in different cases are discussed.