Efeito Peltier em estruturas semicondutoras quasiperiódicas

There is nowadays a growing demand for located cooling and stabilization in optical and electronic devices, haul of portable systems of cooling that they allow a larger independence in several activities. The modules of thermoelectrical cooling are bombs of heat that use efect Peltier, that consists of the production of a temperature gradient when an electric current is applied to a thermoelectrical pair formed by two diferent drivers. That efect is part of a class of thermoelectrical efcts that it is typical of junctions among electric drivers. The modules are manufactured with semiconductors. The used is the bismuth telluride Bi2Te3, arranged in a periodic sequence. In this sense the idea appeared of doing an analysis of a system that obeys the sequence of Fibonacci. The sequence of Fibonacci has connections with the golden proportion, could be found in the reproductive study of the bees, in the behavior of the light and of the atoms, as well as in the growth of plants and in the study of galaxies, among many other applications. An apparatus unidimensional was set up with the objective of investigating the thermal behavior of a module that obeys it a rule of growth of the type Fibonacci. The results demonstrate that the modules that possess periodic arrangement are more eficient

Filmes nanométricos de FeN e ALN crescidos por sputtering e aplicações do efeito peltier

This study will show the capability of the reactive/nonreactive sputtering (dc/rf) technique at low power for the growth of nanometric thin films from magnetic materials (FeN) and widegap semiconductors (AlN), as well as the technological application of the Peltier effect using commercial modules of bismuth telluride (Bi2Te3). Of great technological interest to the high-density magnetic recording industry, the FeN system represents one of the most important magnetic achievements; however, diversity of the phases formed makes it difficult to control its magnetic properties during production of devices. We investigated the variation in these properties using ferromagnetic resonance, MOKE and atomic force microscopy (AFM), as a function of nitrogen concentration in the reactive gas mixture. Aluminum nitride, a component of widegap semiconductors and of considerable interest to the electronic and optoelectronic industry, was grown on nanometric thin film for the first time, with good structural quality by non-reactive rf sputtering of a pure AlN target at low power (≈ 50W). Another finding in this study is that a long deposition time for this material may lead to film contamination by materials adsorbed into deposition chamber walls. Energy-dispersive X-ray (EDX) analysis shows that the presence of magnetic contaminants from previous depositions results in grown AlN semiconductor films exhibiting magnetoresistance with high resistivity. The Peltier effect applied to commercially available compact refrigeration cells, which are efficient for cooling small volumes, was used to manufacture a technologically innovative refrigerated mini wine cooler, for which a patent was duly registered

Deposition and characterization of BiVO4 thin films and evaluation as photoanodes for methylene blue degradation

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Pressure-induced electrical and structural anomalies in Pb1-xCaxTiO3 thin films grown at various oxygen pressures by chemical solution route

Lead calcium titanate (Pb1-xCaxTiO3 or PCT) thin films have been thermally treated under different oxygen pressures, 10, 40 and 80 bar, by using the so-called chemical solution deposition method. The structural, morphological, dielectric and ferroelectric properties were characterized by x-ray diffraction, FT-infrared and Raman spectroscopy, atomic force microscopy and polarization-electric-field hysteresis loop measurements. By annealing at a controlled pressure of around 10 and 40 bar, well-crystallized PCT thin films were successfully prepared. For the sample submitted to 80 bar, the x-ray diffraction, Fourier transformed-infrared and Raman data indicated deviation from the tetragonal symmetry. The most interesting feature in the Raman spectra is the occurrence of intense vibrational modes at frequencies of around 747 and 820 cm(-1), whose presence depends strongly on the amount of the pyrochlore phase. In addition, the Raman spectrum indicates the presence of symmetry-breaking disorder, which would be expected for an amorphous (disorder) and mixed pyrochlore-perovskite phase. During the high-pressure annealing process, the crystallinity and the grain size of the annealed film decreased. This process effectively suppressed both the dielectric and ferroelectric behaviour. Ferroelectric hysteresis loop measurements performed on these PCT films exhibited a clear decrease in the remanent polarization with increasing oxygen pressure.

Influence of Tungsten Dopant on Sintering and Curie Temperatures of Ba(Zr0.10Ti0.90)O-3 Ceramics

Ba(Zr0.10Ti0.90)O3 (BZT10) and W+ 6 substituted BZT ceramics (BZT10:W) were prepared by mixed oxide method. The effect of W+ 6 addition in the BZT was evaluated by X-ray diffraction (XRD), dilatometer analysis, microstructural and dielectrical properties. When tungsten is introduced in the BZT lattice, a decrease in the grain size and shift on Curie temperature to lower value besides broadening of dielectric permittivity is evident. This is due repulsion between tungsten and their nearest neighbors leading to a structure which is tetragonal distorted. The sintering temperature is reduced when tungsten is introduced in the BZT lattice.

Improvement of electrical properties of Sr-modified (Pb,Ca)TiO3 thin films grown by soft chemistry route

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effect of strontium addition on ferroelectric phase transition of PZT thin films prepared by chemical route

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

A New Impedance Measurement System for PZT-Based Structural Health Monitoring

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Transducer Loading Effect on the Performance of PZT-Based SHM Systems

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Growth of Calcium Phosphate Using Chemically Treated Titanium Oxide Nanotubes

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Influence of Excitation Signal on Impedance-based Structural Health Monitoring

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Sizing PZT Transducers in Impedance-Based Structural Health Monitoring

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Optimal Frequency Range Selection for PZT Transducers in Impedance-Based SHM Systems

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Real-time multi-sensors measurement system with temperature effects compensation for impedance-based structural health monitoring

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Piezoelectric effect in composite polyurethane - Ferroelectric ceramics

Flexible and free-standing films of piezoelectric composites made up of lead zirconate titanate (PZT) ceramic powder dispersed in a castor oil-based polyurethane (PU) matrix were obtained by spin coating and characterised as materials for sensor applications. The piezoelectric coefficients d(31) and d(33) were measured with the usual technique. The piezoelectric charge constant d(33) yields values up to less than or equal to 24 pC/N, even at lower PZT content (33 vol%). Some desirable properties like piezoelectricity, flexibility and good mechanical resistance show this new material to be a good alternative for use as sensors and actuators.