Design and control of a climbing robot based on hot melt adhesion

Robust climbing in unstructured environments has been one of the long-standing challenges in robotics research. Among others, the control of large adhesion forces is still an important problem that significantly restricts the locomotion performance of climbing robots. The main contribution of this paper is to propose a novel approach to autonomous robot climbing which makes use of hot melt adhesion (HMA). The HMA material is known as an economical solution to achieve large adhesion forces, which can be varied by controlling the material temperature. For locomotion on both inclined and vertical walls, this paper investigates the basic characteristics of HMA material, and proposes a design and control of a climbing robot that uses the HMA material for attaching and detaching its body to the environment. The robot is equipped with servomotors and thermal control units to actively vary the temperature of the material, and the coordination of these components enables the robot to walk against the gravitational forces even with a relatively large body weight. A real-world platform is used to demonstrate locomotion on a vertical wall, and the experimental result shows the feasibility and overall performances of this approach. © 2013 Elsevier B.V. All rights reserved.

Subtraction of scattering parameters for adiabatic intrinsic responses of semiconductor lasers

Thermal effects will make chip temperature change with bias current of semiconductor lasers, which results in inaccurate intrinsic response by the conventional subtraction method. In this article, an extended subtraction method of scattering parameters for characterizing adiabatic responses of laser diode is proposed. The pulsed injection operation is used to determine the chip temperature of packaged semiconductor laser, and an optimal injection condition is obtained by investigating the dependence of the lasing wavelength on the width and period of the injection pulse in a relatively wide temperature range. In this case, the scattering parameters of laser diode are measured on adiabatic condition and the adiabatic intrinsic responses of packaged laser diode are first extracted. It is found that the adiabatic intrinsic responses are evidently superior to those without thermal consideration. The analysis results indicate that inclusion of thermal. effects is necessary to acquire accurate intrinsic responses of semiconductor lasers. (C) 2008 Wiley Periodicals, Inc.

The image coding scheme based on neural network and SVM

This paper applies data coding thought, which based on the virtual information source modeling put forward by the author, to propose the image coding (compression) scheme based on neural network and SVM. This scheme is composed by "the image coding (compression) scheme based oil SVM" embedded "the lossless data compression scheme based oil neural network". The experiments show that the scheme has high compression ratio under the slightly damages condition, partly solve the contradiction which 'high fidelity' and 'high compression ratio' cannot unify in image coding system.

Comparison between two kinds of semiconductor absorbers for mode-locking in Nd : YVO4 laser

We have demonstrated passive mode-locking in a diode-end-pumped Nd:YVO4 laser using two kinds of semiconductor absorbers whose relaxation region comes from In0.25Ga0.75As grown at low temperature (LT) and GaAs/air interface respectively Mode-locking, using absorbers of the GaAs/air interface relaxation region, has the characteristics of less Q-switching tendency and higher average output power than that using absorbers of LT In0.25Ga0.75As relaxation region, but is not as stable as the latter.

Excitation transfer in vertically self-organized pairs of unequal-sized InAs/GaAs quantum dots

The excitation transfer processes in vertically self organized pairs of unequal-sized quantum dots (QD's), which are created in InAs/GaAs bilayers with different InAs deposition amounts in the first and second layers, have been investigated experimentally by photoluminescence technique. The distance between the two dot layers is varied from 3 to 12 nm. The optical properties of the formed pairs of unequal-sized QD's with clearly discernible ground-state transition energy depend on the spacer thickness. When the spacer layer of GaAs is thin enough, only one photoluminescence peak related to the large QD ensemble has been observed as a result of strong electronic coupling in the InAs QD pairs. The results provide evidence for nonresonant energy transfer from the smaller QDs in the second layer to the larger QD's in the first layer in such an asymmetric QD pair.

High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)

Uniform and high phosphorous doping has been demonstrated during Si growth by GSMBE using disilane and phosphine. The p-n diodes, which consist of a n-Si layer and a p-SiGe layer grown on Si substrate, show a normal I-V characteristic. A roughening transition during P-doped Si growth is found. Ex situ SEM results show that thinner film is specular. When the film becomes thicker, there are small pits of different sizes randomly distributed on the flat surface. The average pit size increases, the pit density decreases, and the size distribution is narrower for even thicker film. No extended defects are found at the substrate interface or in the epilayer. Possible causes for the morphological evolution are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

A two-step backoff scheme for improving the performance of the IEEE 802.11 distributed coordination function

This paper describes the binary exponential backoff mechanism of 802.11 distributed coordination function (DCF), and introduces some methods of modifying the backoff scheme. Then a novel backoff scheme, called Two-step Backoff scheme, is presented and illustrated. The simulation process in OPNET environment has been described also. At last, the analysis and simulation results show that the Two-step backoff scheme can enhance the performance of the IEEE 802.11 DCF.

MPI同步通信顺序模型死锁静态检测算法

静态检测MPI程序同步通信死锁比较困难,通常需要建立程序模型.顺序模型是其他所有复杂模型的基础.通过一种映射方法将顺序模型转化为字符串集合,将死锁检测问题转化为等价的多队列字符申匹配问题,从而设计并实现了一种MPI同步通信顺序模型的静态死锁检测算法.该算法的性能优于通常的环检测方法,并能适应动态消息流.

高效毛细管电泳安培检测的应用研究

毛细管电泳在生命科学，生物技术，医学药物和环境保护中显示了极其重要的应用前景，也被认为是人类进入纳米技术时代的一种富有重要潜在价值的手段。具有高效、快速，耗样量小等特点。而安培电化学恰恰适合毛细管电泳对检测器的要求。毛细管电泳-安培检测法在多方面发挥着不可忽视的作用。本文用此方法进行了一些分析。1. 毛细管区带电泳柱端安培检测抗癌药物巯嘌呤 报道了一种高效快速检测抗癌药物巯嘌呤的方法-毛细管区带电泳柱端安培检测。优化了检测条件，考察了巯嘌呤的电化学行为。在15kV电压下进样3s，在此电压下进行电泳分离，背景电解质为10mmol/L Na_2HPO_4，1.2V检测时，此药物的检测限为1 * 10~(-7)mol/L，线性范围为5 *　10~(-4)-5　* 10~(-6)mol/L，相关系数为0.995，重现性良好。并用该法检测了人体尿样及牛血清蛋白中的巯嘌呤，本工作具有一定的临床意义。2. 毛备管区带电泳柱端安培分离分析多种抗癌药物 通过毛细管区带电泳柱端安培检测法对8-氮鸟嘌呤，5-氟尿嘧啶，6-巯嘌呤，氨甲喋呤和6-硫鸟嘌呤五种抗癌药物进行了灵敏，高效，迅速的分离检测。实验采用33μm的碳纤维盘电极，在20min内分离检测了此五种药物的混合物。在1.2V的检测电位下，五种药物的线性范围超过了三个数量级，相关系数是0.992，这五种药物的检测限依次为5，3，5，9和5 * 10~(-7)mol/L。3. 三种噻唑衍生物的毛细管电泳安培分析 在碳纤维电极上检测三种噻唑衍生物，2-氨基噻唑，2-氨基苯并噻唑和2-巯基苯并噻唑。对应检测限分别为2.0，0.013，0.025 * 10~(-6)mol/L。它们的线性范围较宽，相关系数均在0.9995以上。分别考察了缓冲液pH值及其浓度，分离电压对电泳分离效果的影响，还对实际样品进行了分析。此工作具有一定的实用意义。

南海东北部下地壳高速层的成因探讨

通过对南海北部大陆边缘地壳结构分析，指出南海东北部存在下地壳高速层，

Microarray Analyses of Gene Expression during the Tetrahymena thermophila Life Cycle

Background: The model eukaryote, Tetrahymena thermophila, is the first ciliated protozoan whose genome has been sequenced, enabling genome-wide analysis of gene expression. Methodology/Principal Findings: A genome-wide microarray platform containing the predicted coding sequences (putative genes) for T. thermophila is described, validated and used to study gene expression during the three major stages of the organism's life cycle: growth, starvation and conjugation. Conclusions/Significance: Of the,27,000 predicted open reading frames, transcripts homologous to only,5900 are not detectable in any of these life cycle stages, indicating that this single-celled organism does indeed contain a large number of functional genes. Transcripts from over 5000 predicted genes are expressed at levels >5x corrected background and 95 genes are expressed at >250x corrected background in all stages. Transcripts homologous to 91 predicted genes are specifically expressed and 155 more are highly up-regulated in growing cells, while 90 are specifically expressed and 616 are up-regulated during starvation. Strikingly, transcripts homologous to 1068 predicted genes are specifically expressed and 1753 are significantly up-regulated during conjugation. The patterns of gene expression during conjugation correlate well with the developmental stages of meiosis, nuclear differentiation and DNA elimination. The relationship between gene expression and chromosome fragmentation is analyzed. Genes encoding proteins known to interact or to function in complexes show similar expression patterns, indicating that co-ordinate expression with putative genes of known function can identify genes with related functions. New candidate genes associated with the RNAi-like process of DNA elimination and with meiosis are identified and the late stages of conjugation are shown to be characterized by specific expression of an unexpectedly large and diverse number of genes not involved in nuclear functions.