Analysis of the lateral displacement and optical path difference in wide-field-of-view polarization interference imaging spectrometer

The mechanism of beam splitting and principle of wide-field-of-view compensation of modified Savart polariscope in the wide-field-of-view polarization interference imaging spectrometer (WPIIS) are analyzed and discussed. Formulas for the lateral displacement and optical path difference (OPD) produced by the modified Savart polariscope are derived by ray-tracing method. The theoretical and practical guidance is thereby provided for the study, design, modulation, experiment and engineering of the polarization interference imaging spectrometers and other birefringent Fourier-transform spectrometers based on Savart polariscopes. (c) 2006 Elsevier B.V. All rights reserved.

All-optical switching application of germano-silicate optical fiber incorporated with Ag nanocrystals

银纳米晶体掺杂的高非线性石英光纤的全光转换应用

Harmonic Millimeter Wave Generation and Frequency Up-Conversion Using Optical Injection Locking and Brillouin Selective Sideband Amplification

Harmonic millimeter wave (mm-wave) generation and frequency up-conversion are experimentally demonstrated using optical injection locking and Brillouin selective sideband amplification (BSSA) induced by stimulated Brillouin scattering in a 10-km single-mode fiber. By using this method, we successfully generate third-harmonic mm-wave at 27 GHz (f(LO) - 9 GHz) with single sideband (SSB) modulation and up-convert the 2GHz intermediate frequency signal into the mm-wave band with single mode modulation of the SSB modes. In addition, the mm-wave carrier obtains more than 23 dB power gain due to the BSSA. The transmission experiments show that the generated mm-wave and up-converted signals indicate strong immunity against the chromatic dispersion of the fibers.

OPTICAL CHARACTERISTICS OF GAAS/ALGAAS RIDGE-QUANTUM-WELL-WIRES GROWN BY MBE ON NONPLANAR SUBSTRATES

With conventional photolithography and wet chemical etching, we have realized GaAs/AlGaAs buried ridge-quantum-well-wires (RQWWs) with vertically stacked wires in lateral arrays promising for device application, which were grown in situ by a single-step molecular beam epitaxy growth and formed at the ridge tops of mesas on nonplanar substrates. Confocal photoluminescence (CPL) and polarization-dependent photoreflectance (PR) are applied to study optical characteristics of RQWWs. Lateral bandgap modulation due to lateral variation of QW layer thickness is demonstrated not only by CPL but also by PR. As one evidence for RQWWs, a large blue shift is observed at the energy level positions for electronic transitions corresponding to quantum wells (QWs) at the ridge tops of mesas compared with those corresponding to QWs on nonpatterned areas of the same sample. The blue shift is in contradiction with the fact that the GaAs QW layers at the tops of the mesas are thicker than those on nonpatterned areas. The other evidence for RQWWs, optical anisotropy is provided by the polarization-dependent PR, which results from lateral quantum size effect existing at the tops of the mesas.

The mode control of asymmetric Fabry-Perot optical modulators with multiple quantum wells

The asymmetric Fabry-Perot (ASFP) mode position with the thickness of different index coating layer is calculated. The reason for the blue shift of the ASFP mode with the increasing thickness of low index coating layer is analyzed and this phenomenon is observed in experiments. With the wet-etching method, the ASFP mode can be tuned to the desired wavelength and thus the deviation of growth can be compensated. This method is used to improve the contrast ratio of modulators. With the ASFP mode located at different positions relative to the unbiased e-hh peak, different modulation characteristics are demonstrated.

Shubnikov de Haas oscillations of a two-dimensional electron gas in a modulation-doped Zn0.80Cd0.20Se/ZnS0.06Se0.94 single quantum well

The magnetotransport properties of the two-dimensional (2D) electron gas confined in a modulation-doped Zn0.80Cd0.20Se/ZnS0.06Se0.94 single quantum well structure were studied at temperatures down to 0.35 K in magnetic fields up to 7.5 T. Well resolved 2D Shubnikovde Haas (SdH) oscillations were observed, although the conductivity of the sample in the as grown state was dominated by a bulk parallel conduction layer. After removing most of the parallel conduction layer by wet chemical etching the amplitude and number of SdH oscillations increased. From the temperature dependence of the amplitude the effective mass of the electrons was estimated as 0.17 m(0). Copyright (C) 1996 Published by Elsevier Science Ltd

Mechanisms of optical confinement in phase-locked laser arrays

The nature of optical confinement in phase-locked laser arrays (PLLAs) with a mesa-stripe structure (MSS) has been studied. Two main mechanisms are distinguished, which are based on the variation of the waveguide effective refractive index due to MSS formation and on the refractive index modulation induced by the heating of the structure. Stable operation was achieved when either weak or strong optical coupling was realized in the PLLA. A phase-locked regime of radiation was obtained only for laser diodes with strong optical coupling. In the latter case the angle divergency was not greater than 2 degrees for the antisymmetric supermode emission from the PLLA.

High-field cyclotron resonance and electron-phonon interaction in modulation-doped multiple quantum well structures

A systematic study of electron cyclotron resonance (CR) in two sets of GaAs/Al0.3Ga0.7As modulation-doped quantum-well samples (well widths between 12 and 24 nm) has been carried out in magnetic fields up to 30 T. Polaron CR is the dominant transition in the region of GaAs optical phonons for the set of lightly doped samples, and the results are in good agreement with calculations that include the interaction with interface optical phonons. The results from the heavily doped set are markedly different. At low magnetic fields (below the GaAs reststrahlen region), all three samples exhibit almost identical CR which shows little effect of the polaron interaction due to screening and Pauli-principle effects. Above the GaAs LO-phonon region (B > similar to 23 T), the three samples behave very differently. For the most lightly doped sample (3 x 10(11) cm(-2)) only one transition minimum is observed, which can be explained as screened polaron CR. A sample of intermediate density (6 x 10(11) cm(-2)) shows two lines above 23 T; the higher frequency branch is indistinguishable from the positions of the single line of the low density sample. For the most heavily, doped sample (1.2 x 10(12) cm(-2)) there is no evidence of high frequency resonance, and the strong, single line observed is indistinguishable from the lower branch observed from sample with intermediate doping density. We suggest that the low frequency branch in our experiment is a magnetoplasmon resonance red-shifted by disorder, and the upper branch is single-particle-like screened polaron CR. (C) 1998 Elsevier Science B.V. All rights reserved.

Observation of N-Shaped Negative Differential Resistance in GaAs-Based Modulation-Doped Field Effect Transistor with InAs Quantum Dots

N-shaped negative differential resistance (NDR) with a high peak-to-valley ratio (PVR) is observed in a GaAs-based modulation-doped field effect transistor (MODFET) with InAs quantum dots (QDs) in the barrier layer (QDFET) compared with a GaAs MODFET. The NDR is explained as the real-space transfer (RST) of high-mobility electrons in a channel into nearby barrier layers with low mobility, and the PVR is enhanced dramatically upon inserting the QD layer. It is also revealed that the QD layer traps holes and acts as a positively charged nano-floating gate after a brief optical illumination, while it acts as a negatively charged nano-floating gate and depletes the adjacent channel when charged by the electrons. The NDR suggests a promising application in memory or high-speed logic devices for the QDFET structure.

40 Gbits/s all-optical clock recovery for degraded signals using an amplified feedback laser

All-optical clock recovery for the return-to-zero modulation format is demonstrated experimentally at 40 Gbits/s by using an amplified feedback laser. A 40 GHz optical clock with a root-mean-square (rms) timing jitter of 130 fs and a carrier-to-noise ratio of 42 dB is obtained. Also, a 40 GHz optical clock with timing jitter of 137 fs is directly recovered from pseudo-non-return-to-zero signals degraded by polarization-mode dispersion (PMD). No preprocessing stage to enhance the clock tone is used. The rms timing jitter of the recovered clock is investigated for different values of input power and for varying amounts of waveform distortion due to PMD.

THEORETICAL AND EXPERIMENTAL STUDY OF POLARIZATION CHARACTERISTICS OF POLARIZATION MAINTAINING FIBER BASED ON WAVELENGTH-SWEEPING MODULATION

We analyze theoretically the polarization characteristics of polarization maintaining fiber and study the basic measurement principles of beat length and polarization extinction ratio of this kind of optical fiber. According, to the dependence of the phase difference between two orthogonally polarized modes (denoted Os HE(11)(x) and HE(11)(y)) transmitted in the polarization maintaining fiber on the light wavelength, we propose the wavelength-sweeping modulation method to measure the beat length and the model birefringence. Based on this technique, the hew length and polarization extinction ratio of the PANDA polarization maintaining fibers (PMFs) (provided by Yangtze Optical Fiber and Cable Company, Wuhan, China) were investigated in detail. Experimental results show good consistent with the theoretical ones. We find that this method shows high measurement precision with the advantages of clear measurement principle and easy to operate. 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1466-1469, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25244

Generation of 10 GHz, 1.9 ps optical pulse train using semiconductor optical amplifier and silica-based highly nonlinear fiber

We propose a simple approach to generate a high quality 10 GHz 1.9 ps optical pulse train using a semiconductor optical amplifier and silica-based highly nonlinear fiber. An optical pulse generator based on our proposed scheme is easy to set up with commercially available optical components. A 10 GHz, 1.9 ps optical pulse train is obtained with timing jitter as low as 60 fs over the frequency range 10 Hz-1 MHz. With a wavelength tunable CW laser, a wide wavelength tunable span can be achieved over the entire C band. The proposed optical pulse generator also can operate at different repetition rates from 3 to 10 GHz.

Optimized logarithmic phase masks used to generate defocus invariant modulation transfer function for wavefront coding system

In a previous Letter [Opt. Lett. 33, 1171 (2008)], we proposed an improved logarithmic phase mask by making modifications to the original one designed by Sherif. However, further studies in another paper [Appl. Opt. 49, 229 (2010)] show that even when the Sherif mask and the improved one are optimized, their corresponding defocused modulation transfer functions (MTFs) are still not stable with respect to focus errors. So, by further modifying their phase profiles, we design another two logarithmic phase masks that exhibit more stable defocused MTF. However, with the defocus-induced phase effect considered, we find that the performance of the two masks proposed in this Letter is better than the Sherif mask, but worse than our previously proposed phase mask, according to the Hilbert space angle. (C) 2010 Optical Society of America

All-optical OFDM and distributed Raman amplification: Challenges to enable high capacities and extend reach

We review recent advances in all-optical OFDM technologies and discuss the performance of a field trial of a 2 Tbit/s Coherent WDM over 124 km with distributed Raman amplification. The results indicate that careful optimisation of the Raman pumps is essential. We also consider how all-optical OFDM systems perform favourably against energy consumption when compared with alternative coherent detection schemes. We argue that, in an energy constrained high-capacity transmission system, direct detected all-optical OFDM with 'ideal' Raman amplification is an attractive candidate for metro area datacentre interconnects with ~100 km fibre spans, with an overall energy requirement at least three times lower than coherent detection techniques.