Linear spatio-temporal instability analysis of ice growth under a falling water film

A linear spatio-temporal stability analysis is conducted for the ice growth under a falling water film along an inclined ice plane. The full system of linear stability equations is solved by using the Chebyshev collocation method. By plotting the boundary curve between the linear absolute and convective instabilities (AI/CI) of the ice mode in the parameter plane of the Reynolds number and incline angle, it is found that the linear absolute instability exists and occurs above a minimum Reynolds number and below a maximum inclined angle. Furthermore, by plotting the critical Reynolds number curves with respect to the inclined angle for the downstream and upstream branches, the convectively unstable region is determined and divided into three parts, one of which has both downstream and upstream convectively unstable wavepackets and the other two have only downstream or upstream convectively unstable wavepacket. Finally, the effect of the Stefan number and the thickness of the ice layer on the AI/CI boundary curve is investigated.

Crystal structure of microwave dielectric ceramics Ba[(Mg1-xCdx)(0.33)Nb-0.67]O-3

A series of complex perovskite solid solutions of Ba[(Mg1-xCdx)(0.33)Nb-0.67]O-3 have been synthesized by the columbite method. Detailed Rietveld refinement of their X-ray diffraction data show that Ba[(Mg1-xCdx)0(.33)Nb(0.67)]O-3 has an order trigonal structure. The ordering degree as determined by the B-site occupancies increases with the partial substitution of Cd for Mg.

Tin (IV) phthalocyanine oxide: An air-stable semiconductor with high electron mobility

Air-stable n-type field effect transistors were fabricated with an axially oxygen substituted metal phthalocyanine, tin (IV) phthalocyanine oxide (SnOPc), as active layers. The SnOPc thin films showed highly crystallinity on modified dielectric layer, and the electron field-effect mobility reached 0.44 cm(2) V-1 s(-1). After storage in air for 32 days, the mobility and on/off ratio did not obviously change. The above results also indicated that it is an effective approach of seeking n-type semiconductor by incorporating the appropriate metal connected with electron-withdrawing group into pi-pi conjugated system.

Direct Electrochemistry and Electrocatalysis of Hemoglobin in Lipid Film Incorporated with Room-Temperature Ionic Liquid

A facile phospholipid/room-temperature ionic liquid (RTIL) composite material based on dimyristoylphosphatidylcholine (DMPC) and 1-butyl-3-methylimidazolium hexafluorophosphate ([bmim]PF6) was exploited as a new matrix for immobilizing protein. Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) were adopted to characterize this composite film. Hemoglobin (Hb) was chosen as a model protein to investigate the composite system. UV-vis absorbance spectra showed that Hb still maintained its heme crevice integrity in this composite film.

Effect of interfacial roughness on dewetting behavior of polystyrene/poly(methyl methacrylate) bilayer film

The dewetting behavior of polystyrene (PS) film on poly(methyl methacrylate) (PMMA) sublayer was investigated by changing the short-range roughness of the PMMA sublayer systemically. When the bilayer film was heated to the temperature above both Tgs, the protuberances formed in both layers to reduce the system energy. By tracing the dewetting process of the PS up-layer, the dewetting velocity was found to increase with the roughness of the sublayer.

Preparation, structure and dielectric properties of (Ba1-xSrx)(2)NaNb5O15 ceramics

In this study the tungsten-bronze type tetragonal (Ba1-xSrx)(2)NaNb5O15 system as a kind of lead-free ferroelectric ceramics has been synthesized by low-temperature combustion method. Microstructure and dielectric properties of (Ba1-xSrx)(2)NaNb5O15 system were also investigated. X-ray diffraction (XRD) study confirms the formation of single-phase tetragonal compounds in the crystal system at room temperature. The TEM photograph shows that the particles synthesized by low-temperature combustion method are uniform with an average particle size of 30nm in diameter.

Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator

Organic thin-film transistors (OTFTs) using high dielectric constant material tantalum pentoxide (Ta2O5) and benzocyclobutenone (BCBO) derivatives as double-layer insulator were fabricated. Three metals with different work function, including Al (4.3 eV), Cr (4.5 eV) and Au (5.1 eV), were employed as gate electrodes to study the correlation between work function of gate metals and hysteresis characteristics of OTFTs. The devices with low work function metal Al or Cr as gate electrode exhibited high hysteresis (about 2.5 V threshold voltage shift). However, low hysteresis (about 0.7 V threshold voltage shift) OTFTs were attained based on high work function metal Au as gate electrode.

First-principles study on the conducting mechanism of the heavy-fermion system CaCu3Ru4O12

We investigated the electronic structure of the d-electron heavy-fermion system CaCu3Ru4O12 by use of the full-potential linearized augmented plane wave method. Our results indicate that the compound is a paramagnetic metal, in agreement with the experimental observation. The conductivity of the compound is governed by two main factors. One is the Ru-O dp pi coupling around the Fermi energy level, which makes Ru-O-Ru networks conductive. The other is the hybridization between the itinerant Ru 4d electrons and the localized Cu 3d (dz(2) and part of dx(2)-y(2) and dxy) electrons through O 2p orbitals in the energy region from -2.0 to -1.0 eV. The Ru-O-Cu interaction makes the localized Cu electrons start to be itinerant through the coupling with Ru 4d electrons. This results in Ru-O-Cu networks being conductive. Therefore, in the title compound, both Ru-O-Ru and Ru-O-Cu networks contribute to the conducting behavior.

A simple route to incorporate redox mediator into carbon nanotubes/Nafion composite film and its application to determine NADH at low potential

Through a new and simple ion-exchange route, two-electron redox mediator thionine has been deliberately incorporated into the carbon nanotubes (CNTs)/Nafion composite film due to the fact that there is strong interaction between any of two among the three materials (ion-exchange process between thionine and Nafion, strong adsorption of thionine by CNTs, and wrapping and solubilizing of CNTs with Nation). The good homogenization of electron conductor CNTs in the integrated films provides the possibility of three-dimensional electron conductive network. The resulting integrated films exhibited high and stable electrocatalytic activity toward NADH oxidation with the significant decrease of high overpotential, which responds more sensitively more than those modified by thioine or CNTs alone. Such high electrocatalytic activity facilitated the low potential determination of NADH (as low as -0.1 V), which eliminated the interferences from other easily oxidizable species. In a word, the immobilization approach is very simple, timesaving and effective, which could be extended to the immobilization of other cationic redox mediators into the CNTs/Nafion composite film. And these features may offer potential promise for the design of amperometric biosensors.

Electrical characterization of copper phthalocyanine thin-film transistors with fluoride gate insulator

Different fluoride materials are used as gate dielectrics to fabricate copper phthalocyanine (CuPc) thin film. transistors (OTFTs). The fabricated devices exhibit good electrical characteristics and the mobility is found to be dependent on the gate voltage from 10(-3) to 10(-1) cm(2) V(-1)s(-1). The observed noticeable electron injection at the drain electrode is of great significance in achieving ambipolar OTFTs. The same method for formation of organic semiconductors and gate dielectric films greatly simplifies the fabrication process. This provides a convenient way to produce high-performance OTFTs on a large scale and should be useful for integration in organic displays.

Electrical characteristics of copper phthalocyanine thin-film transistors with polyamide-6/polytetrafluoroethylene gate insulator

Polyamide- 6(PA 6)/polytetrafluoroethylene is studied as a potential gate dielectric for flexible organic thin film transistors. The same method used for the formation of organic semiconductor and gate dielectric films greatly simplifies the fabrication process of devices. The fabricated transistors show good electrical characteristics. Ambipolar behaviour is observed even when the device is operated in air.

Conductive property of multiwall carbon nanotubes-PEO-salt nanocomposite film

By adding a small amount of multiwall carbon nanotubes (MWNTs) to polyethylene oxide (PEO) and a salt system, a new type of nanocomposite film was constructed. At ambient temperature, the conductivity of the PEO-salt-0.5 wt % MWNTs was nearly three orders of magnitude higher than that of the PEO-salt system. The conductive property of the nanocomposite film was characterized by ac impedance and the differential scanning calorimetry technique.

Ordered pattern formation from dewetting of polymer thin film with surface disturbance by capillary force lithography

The dewetting process of thin polystyrene (PS) film with built-in ordered disturbance by capillary force lithography (CFL) has. been investigated in situ by AFM. Two different phenomena are observed depending on the excess surface energy (DeltaF(gamma)) of the system. When DeltaF(gamma) is less than a certain critical value (i.e., the disturbance amplitude is under a critical value), the PS film would be flattened and become stable finally by heating above T-g. While, if the size of the disturbance amplitude is larger than the critical value, ordered PS liquid droplets form by further dewetting. The pattern formation mechanisms and influencing factors have been discussed in detail.

Organic thin-film transistors having inorganic/organic double gate insulators

Bottom-contact organic thin-film transistors (BC OTFTs) based on inorganic/organic double gate insulators were demonstrated. The double gate insulators consisted of tantalum pentoxide (Ta2O5) with high dielectric constant (kappa) as the first gate insulator and octadecyltrichlorosilane (OTS) with low kappa as the second gate insulator. The devices have carrier mobilities larger than 10(-2) cm(2)/V s, on/off current ratio greater than 10(5), and the threshold voltage of -14 V, which is threefold larger field-effect mobility and an order of magnitude larger on/off current ratio than the OTFTs with a Ta2O5 gate insulator. The leakage current was decreased from 2.4x10(-6) to 7.4x10(-8) A due to the introduction of the OTS second dielectric layer. The results demonstrated that using inorganic/organic double insulator as the gate dielectric layer is an effective method to fabricate OTFTs with improved electric characteristics.