Automation of Chemical Spray Pyrolysis Unit and Fabrication of Sprayed CuInS2/In2S3 Solar Cell

Aim of the present work was to automate CSP process, to deposit and characterize CuInS2/In2S3 layers using this system and to fabricate devices using these films.An automated spray system for the deposition of compound semiconductor thin films was designed and developed so as to eliminate the manual labour involved in spraying and facilitate standardization of the method. The system was designed such that parameters like spray rate, movement of spray head, duration of spray, temperature of substrate, pressure of carrier gas and height of the spray head from the substrate could be varied. Using this system, binary, ternary as well as quaternary films could be successfully deposited.The second part of the work deal with deposition and characterization of CuInS2 and In2S3 layers respectively.In the case of CuInS2 absorbers, the effects of different preparation conditions and post deposition treatments on the optoelectronic, morphological and structural properties were investigated. It was observed that preparation conditions and post deposition treatments played crucial role in controlling the properties of the films. The studies in this direction were useful in understanding how the variation in spray parameters tailored the properties of the absorber layer. These results were subsequently made use of in device fabrication process.Effects of copper incorporation in In2S3 films were investigated to find how the diffusion of Cu from CuInS2 to In2S3 will affect the properties at the junction. It was noticed that there was a regular variation in the opto-electronic properties with increase in copper concentration.Devices were fabricated on ITO coated glass using CuInS2 as absorber and In2S3 as buffer layer with silver as the top electrode. Stable devices could be deposited over an area of 0.25 cm2, even though the efficiency obtained was not high. Using manual spray system, we could achieve devices of area 0.01 cm2 only. Thus automation helped in obtaining repeatable results over larger areas than those obtained while using the manual unit. Silver diffusion on the cells before coating the electrodes resulted in better collection of carriers.From this work it was seen CuInS2/In2S3 junction deposited through automated spray process has potential to achieve high efficiencies.

Dynamic mechanical analysis of binary and ternary polymer blends based on nylon copolymer/EPDM rubber and EPM grafted maleic anhydride compatibilizer

The dynamic mechanical properties such as storage modulus, loss modulus and damping properties of blends of nylon copolymer (PA6,66) with ethylene propylene diene (EPDM) rubber was investigated with special reference to the effect of blend ratio and compatibilisation over a temperature range –100°C to 150°C at different frequencies. The effect of change in the composition of the polymer blends on tanδ was studied to understand the extent of polymer miscibility and damping characteristics. The loss tangent curve of the blends exhibited two transition peaks, corresponding to the glass transition temperature (Tg) of individual components indicating incompatibility of the blend systems. The morphology of the blends has been examined by using scanning electron microscopy. The Arrhenius relationship was used to calculate the activation energy for the glass transition of the blends. Finally, attempts have been made to compare the experimental data with theoretical models.

Growth and characterization of nanostructured wide band gap semiconductors for optoelectronic applications

Department of Physics, Cochin University of Science and Technology

Synthesis and Characterization of Some Organic Semiconductors and Investigations on the Effect of Swift Heavy Ions on Their Properties

In this work polymers belonging to polyaniline and polyaniline doped with camphor sulphonic acid are synthesised. Cobalt phthalocyanine is an interesting candidate belonging to the tetramers. Studies on the composites containing cobalt phthalocyanine tetramer and polyaniline doped with camphor sulphonic acid for various concentration are also undertaken in order to understand the mechanism. RF plasma polymerised aniline and furfural are prepared. The structural and electrical properties are evaluated. The bombardment of swift heavy ions of these films are carried out and the effect of irradiation on their properties is also investigated.

Studies on New Binary Accelerator Systems in Rubber Vulcanisation

Department of Polymer Science and Rubber Technology, Cochin University of Science and Technology

Acid-Base, Surface electron donating and catalytic properties of binary oxides of Zr with rare earth elements

Department of Applied Chemistry, Cochin University of Science and Technology

Design and fabrication of a photothermal spectrometer and investigations of multilayer thin films"

In this work we present the results of our attempt to build a compact photothermal spectrometer capable of both manual and automated mode of operation.The salient features of the system include the ability to analyse thin film, powder and polymer samples. The tool has been in use to investigate thermal, optical and transport properties. Binary and ternary semiconducting thin films were analysed for their thermal diffusivities. The system could perform thickness measurements nondestructively. Ion implanted semiconductors are widely studied for the effect of radiation induced defects. We could perform nondestructive imaging of defects using our spectrometer.The results reported in his thesis on the above in addition to studies on In2S3 and transparent conducting oxide ZnO have been achieved with this spectrometer. Various polymer samples have been easily analysed for their thermal diffusivities. The technique provided ease of analysis not achieved with conventional techniques like TGA and DSC. Industrial application of the tool has also been proved by analyzing defects of welded joints and adhesion of paints. Indigenization of the expensive lock-in-amplifier and automation has been the significant achievement in the course of this dissertation. We are on our way to prove the noise rejection capabilities of our PC LIA.

Thermal characterisation of doped InP using photoacoustic technique

An open cell photoacoustic configuration has been employed to evaluate the thermal diffusivity of pure InP as well as InP doped with sulphur and iron. Chopped optical radiation at 488 nm from an Ar-ion laser has been used to excite photoacoustic signals which been detected by a sensitive electret microphone. Thermal diffusivity value have been calculated from phase versus chopping frequency plots. Doped sample are found to show a reduced value for thermal diffusivity in comparison with intrinsically pure sample. The results have been interpreted in terms of the mechanisms of heat generation and transmission in semiconductors.

Monte Carlo Study of the Growth of L12 ordered domains in fcc A3B binary alloys

A Monte Carlo study of the late time growth of L12-ordered domains in a fcc A3B binary alloy is presented. The energy of the alloy has been modeled by a nearest-neighbor interaction Ising Hamiltonian. The system exhibits a fourfold degenerated ground state and two kinds of interfaces separating ordered domains: flat and curved antiphase boundaries. Two different dynamics are used in the simulations: the standard atom-atom exchange mechanism and the more realistic vacancy-atom exchange mechanism. The results obtained by both methods are compared. In particular we study the time evolution of the excess energy, the structure factor and the mean distance between walls. In the case of atom-atom exchange mechanism anisotropic growth has been found: two characteristic lengths are needed in order to describe the evolution. Contrarily, with the vacancyatom exchange mechanism scaling with a single length holds. Results are contrasted with existing experiments in Cu3Au and theories for anisotropic growth.

Vacancy-assisted domain-growth in asymmetric binary alloys: A Monte Carlo Study

A Monte Carlo simulation study of the vacancy-assisted domain growth in asymmetric binary alloys is presented. The system is modeled using a three-state ABV Hamiltonian which includes an asymmetry term. Our simulated system is a stoichiometric two-dimensional binary alloy with a single vacancy which evolves according to the vacancy-atom exchange mechanism. We obtain that, compared to the symmetric case, the ordering process slows down dramatically. Concerning the asymptotic behavior it is algebraic and characterized by the Allen-Cahn growth exponent x51/2. The late stages of the evolution are preceded by a transient regime strongly affected by both the temperature and the degree of asymmetry of the alloy. The results are discussed and compared to those obtained for the symmetric case.

Comparison between molecular dynamics abd Monte Carlo simulations of an ordering process in a binary alloy

Ordering in a binary alloy is studied by means of a molecular-dynamics (MD) algorithm which allows to reach the domain growth regime. Results are compared with Monte Carlo simulations using a realistic vacancy-atom (MC-VA) mechanism. At low temperatures fast growth with a dynamical exponent x>1/2 is found for MD and MC-VA. The study of a nonequilibrium ordering process with the two methods shows the importance of the nonhomogeneity of the excitations in the system for determining its macroscopic kinetics.