On-chip non-invasive and label-free cell discrimination by impedance spectroscopy

OBJECTIVES: Many flow-cytometric cell characterization methods require costly markers and colour reagents. We present here a novel device for cell discrimination based on impedance measurement of electrical cell properties in a microfluidic chip, without the need of extensive sample preparation steps and the requirement of labelling dyes. MATERIALS AND METHODS, RESULTS: We demonstrate that in-flow single cell measurements in our microchip allow for discrimination of various cell line types, such as undifferentiated mouse fibroblasts 3T3-L1 and adipocytes on the one hand, or human monocytes and in vitro differentiated dendritic cells and macrophages on the other hand. In addition, viability and apoptosis analyses were carried out successfully for Jurkat cell models. Studies on several species, including bacteria or fungi, demonstrate not only the capability to enumerate these cells, but also show that even other microbiological life cycle phases can be visualized. CONCLUSIONS: These results underline the potential of impedance spectroscopy flow cytometry as a valuable complement to other known cytometers and cell detection systems.

On-chip Non-reciprocal Optical Devices Based on Quantum Inspired Photonic Lattices

We propose integrated optical structures that can be used as isolators and polarization splitters based on engineered photonic lattices. Starting from optical waveguide arrays that mimic Fock space (quantum state with a well-defined particle number) representation of a non-interacting two-site Bose Hubbard Hamiltonian, we show that introducing magneto-optic nonreciprocity to these structures leads to a superior optical isolation performance. In the forward propagation direction, an input TM polarized beam experiences a perfect state transfer between the input and output waveguide channels while surface Bloch oscillations block the backward transmission between the same ports. Our analysis indicates a large isolation ratio of 75 dB after a propagation distance of 8mm inside seven coupled waveguides. Moreover, we demonstrate that, a judicious choice of the nonreciprocity in this same geometry can lead to perfect polarization splitting.

A STUDY ON THE FEASIBILITY OF UNIVERSAL CHIP CONTROL IN MACHINING

A novel solution to the long standing issue of chip entanglement and breakage in metal cutting is presented in this dissertation. Through this work, an attempt is made to achieve universal chip control in machining by using chip guidance and subsequent breakage by backward bending (tensile loading of the chip's rough top surface) to effectively control long continuous chips into small segments. One big limitation of using chip breaker geometries in disposable carbide inserts is that the application range is limited to a narrow band depending on cutting conditions. Even within a recommended operating range, chip breakers do not function effectively as designed due to the inherent variations of the cutting process. Moreover, for a particular process, matching the chip breaker geometry with the right cutting conditions to achieve effective chip control is a very iterative process. The existence of a large variety of proprietary chip breaker designs further exacerbates the problem of easily implementing a robust and comprehensive chip control technique. To address the need for a robust and universal chip control technique, a new method is proposed in this work. By using a single tool top form geometry coupled with a tooling system for inducing chip breaking by backward bending, the proposed method achieves comprehensive chip control over a wide range of cutting conditions. A geometry based model is developed to predict a variable edge inclination angle that guides the chip flow to a predetermined target location. Chip kinematics for the new tool geometry is examined via photographic evidence from experimental cutting trials. Both qualitative and quantitative methods are used to characterize the chip kinematics. Results from the chip characterization studies indicate that the chip flow and final form show a remarkable consistency across multiple levels of workpiece and tool configurations as well as cutting conditions. A new tooling system is then designed to comprehensively break the chip by backward bending. Test results with the new tooling system prove that by utilizing the chip guidance and backward bending mechanism, long continuous chips can be more consistently broken into smaller segments that are generally deemed acceptable or good chips. It is found that the proposed tool can be applied effectively over a wider range of cutting conditions than present chip breakers thus taking possibly the first step towards achieving universal chip control in machining.

IN-SITU TEM PLASMA CHIP NANOFABRICATION AND CHARACTERIZATION

A silicon-based microcell was fabricated with the potential for use in in-situ transmission electron microscopy (TEM) of materials under plasma processing. The microcell consisted of 50 nm-thick film of silicon nitride observation window with 60μm distance between two electrodes. E-beam scattering Mont Carlo simulation showed that the silicon nitride thin film would have very low scattering effect on TEM primary electron beam accelerated at 200 keV. Only 4.7% of primary electrons were scattered by silicon nitride thin film and the Ar gas (60 μm thick at 1 atm pressure) filling the space between silicon nitride films. Theoretical calculation also showed low absorption of high-energy e-beam electrons. Because the plasma cell needs to survive the high vacuum TEM chamber while holding 1 atm internal pressure, a finite element analysis was performed to find the maximum stress the low-stress silicon nitride thin film experienced under pressure. Considering the maximum burst stress of low-stress silicon nitride thin film, the simulation results showed that the 50 nm silicon nitride thin film can be used in TEM under 1 atm pressure as the observation window. Ex-situ plasma generation experiment demonstrated that air plasma can be ignited at DC voltage of 570. A Scanning electron microscopy (SEM) analysis showed that etching and deposition occurred during the plasma process and larger dendrites formed on the positive electrode.

Energetic neutral atom imaging of the lunar surface

Since the Moon is not shielded by a global magnetic field or by an atmosphere, solar wind plasma impinges onto the lunar surface almost unhindered. Until recently, it was assumed that almost all of the impinging solar wind ions are absorbed by the surface. However, recent Interstellar Boundary Explorer, Chandrayaan-1, and Kaguya observations showed that the interaction process between the solar wind ions and the lunar surface is more complex than previously assumed. In contrast to previous assumptions, a large fraction of the impinging solar wind ions is backscattered as energetic neutral atoms. Using the complete Chandrayaan-1 Energetic Neutral Analyzer data set, we compute a global solar wind reflection ratio of 0.16 ± 0.05 from the lunar surface. Since these backscattered neutral particles are not affected by any electric or magnetic fields, each particle's point of origin on the lunar surface can be determined in a straight-forward manner allowing us to create energetic neutral atom maps of the lunar surface. The energetic neutral atom measurements recorded by the Chandrayaan-1 Energetic Neutral Analyzer cover ˜89% of the lunar surface, whereby the lunar farside is almost completely covered. We analyzed all available energetic neutral atom measurements recorded by the Chandrayaan-1 Energetic Neutral Analyzer to create the first global energetic neutral hydrogen maps of the lunar surface.

Lunar energetic neutral atom (ENA) spectra measured by the interstellar boundary explorer (IBEX)

The solar wind continuously flows out from the Sun, filling interplanetary space and directly interacting with the surfaces of small planetary bodies and other objects throughout the solar system. A significant fraction of these ions backscatter from the surface as energetic neutral atoms (ENAs). The first observations of these ENA emissions from the Moon were recently reported from the Interstellar Boundary Explorer (IBEX). These observations yielded a lunar ENA albedo of ˜10% and showed that the Moon reflects ˜150 metric tons of neutral hydrogen per year. More recently, a survey of the first 2.5 years of IBEX observations of lunar ENAs was conducted for times when the Moon was in the solar wind. Here, we present the first IBEX ENA observations when the Moon is inside the terrestrial magnetosheath and compare them with observations when the Moon is in the solar wind. Our analysis shows that: (1) the ENA intensities are on average higher when the Moon is in the magnetosheath, (2) the energy spectra are similar above ~0.6* solar wind energy but below there are large differences of the order of a factor of 10, (3) the energy spectra resemble a power law with a "hump" at ˜0.6 * solar wind energy, and (4) this "hump" is broader when the Moon is in the magnetosheath. We explore potential scenarios to explain the differences, namely the effects of the topography of the lunar surface and the consequences of a very different Mach number in the solar wind versus in the magnetosheath.

Remote energetic neutral atom imaging of electric potential over a lunar magnetic anomaly

The formation of electric potential over lunar magnetized regions is essential for understanding fundamental lunar science, for understanding the lunar environment, and for planning human exploration on the Moon. A large positive electric potential was predicted and detected from single point measurements. Here, we demonstrate a remote imaging technique of electric potential mapping at the lunar surface, making use of a new concept involving hydrogen neutral atoms derived from solar wind. We apply the technique to a lunar magnetized region using an existing dataset of the neutral atom energy spectrometer SARA/CENA on Chandrayaan-1. Electrostatic potential larger than +135 V inside the Gerasimovic anomaly is confirmed. This structure is found spreading all over the magnetized region. The widely spread electric potential can influence the local plasma and dust environment near the magnetic anomaly.