High temperature direct double side cooled inverter module for hybrid electric vehicle application

In this paper a novel approach to the design and fabrication of a high temperature inverter module for hybrid electrical vehicles is presented. Firstly, SiC power electronic devices are considered in place of the conventional Si devices. Use of SiC raises the maximum practical operating junction temperature to well over 200°C, giving much greater thermal headroom between the chips and the coolant. In the first fabrication, a SiC Schottky barrier diode (SBD) replaces the Si pin diode and is paired with a Si-IGBT. Secondly, double-sided cooling is employed, in which the semiconductor chips are sandwiched between two substrate tiles. The tiles provide electrical connections to the top and the bottom of the chips, thus replacing the conventional wire bonded interconnect. Each tile assembly supports two IGBTs and two SBDs in a half-bridge configuration. Both sides of the assembly are cooled directly using a high-performance liquid impingement system. Specific features of the design ensure that thermo-mechanical stresses are controlled so as to achieve long thermal cycling life. A prototype 10 kW inverter module is described incorporating three half-bridge sandwich assemblies, gate drives, dc-link capacitance and two heat-exchangers. This achieves a volumetric power density of 30W/cm3.

Rational design of zinc phosphide heterojunction photovoltaics

The prospect of terawatt-scale electricity generation using a photovoltaic (PV) device places strict requirements on the active semiconductor optoelectronic properties and elemental abundance. After reviewing the constraints placed on an "earth-abundant" solar absorber, we find zinc phosphide (α-Zn₃P₂) to be an ideal candidate. In addition to its near-optimal direct band gap of 1.5 eV, high visible-light absorption coefficient (>10⁴ cm^-1), and long minority-carrier diffusion length (>5 μm), Zn₃P₂ is composed of abundant Zn and P elements and has excellent physical properties for scalable thin-film deposition. However, to date, a Zn₃P₂ device of sufficient efficiency for commercial applications has not been demonstrated. Record efficiencies of 6.0% for multicrystalline and 4.3% for thin-film cells have been reported, respectively. Performance has been limited by the intrinsic p-type conductivity of Zn₃P₂ which restricts us to Schottky and heterojunction device designs. Due to our poor understanding of Zn₃P₂ interfaces, an ideal heterojunction partner has not yet been found.

The goal of this thesis is to explore the upper limit of solar conversion efficiency achievable with a Zn₃P₂ absorber through the design of an optimal heterojunction PV device. To do so, we investigate three key aspects of material growth, interface energetics, and device design. First, the growth of Zn₃P₂ on GaAs(001) is studied using compound-source molecular-beam epitaxy (MBE). We successfully demonstrate the pseudomorphic growth of Zn₃P₂ epilayers of controlled orientation and optoelectronic properties. Next, the energy-band alignments of epitaxial Zn₃P₂ and II-VI and III-V semiconductor interfaces are measured via high-resolution x-ray photoelectron spectroscopy in order to determine the most appropriate heterojunction partner. From this work, we identify ZnSe as a nearly ideal n-type emitter for a Zn₃P₂ PV device. Finally, various II-VI/Zn₃P₂ heterojunction solar cells designs are fabricated, including substrate and superstrate architectures, and evaluated based on their solar conversion efficiency.

Investigations of the conductor-semiconductor interface

I. Schottky barriers produced by polymeric sulfur nitride, (SN)_x, on nine common III-V and II-VI compound semiconductors are compared to barriers formed by Au. The conductor (SN)_x produces significantly higher barriers to n-type semiconductors and lower barriers to p-type semiconductors than Au, the most electronegative elemental metal. The barrier height improvement, defined as ɸ(SN)_x - ɸ(Au), is smaller on covalent semiconductors than on ionic semiconductors; (SN)x barriers follow the ionic-covalent transition. Details of (SN)_x film deposition, samples preparation, and barrier height measurements are described.

II. The rate of dissolution of amorphous Si into solid Al is measured. The rate of movement of the amorphous Si/Al interface is found to be much faster than predicted by a simple model of the transport of Si through Al. This result is related to defects in the growth of epitaxial Si using the solid phase epitaxy process.

Electrical and optical investigations of beta-gallium oxide

An experimental investigation of the optical properties of β–gallium oxide has been carried out, covering the wavelength range 220-2500 nm.

The refractive index and birefringence have been determined to about ± 1% accuracy over the range 270-2500 nm, by the use of a technique based on the occurrence of fringes in the transmission of a thin sample due to multiple internal reflections in the sample (ie., the "channelled spectrum" of the sample.)

The optical absorption coefficient has been determined over the range 220 - 300 nm, which range spans the fundamental absorption edge of β – Ga₂O₃. Two techniques were used in the absorption coefficient determination: measurement of transmission of a thin sample, and measurement of photocurrent from a Schottky barrier formed on the surface of a sample. Absorption coefficient was measured over a range from 10 to greater than 10⁵, to an accuracy of better than ± 20%. The absorption edge was found to be strongly polarization-dependent.

Detailed analyses are presented of all three experimental techniques used. Experimentally determined values of the optical constants are presented in graphical form.

Propriedades ópticas, magnéticas e estruturais de monocristais Cs2NaAlF6 dopados com cromo trivalente

Este trabalho teve por objetivo a realização do estudo das propriedades ópticas, magnéticas e estruturais do cristal elpasolita Cs2NaAlF6 dopado com as concentrações de 0,1%, 1,0%, 3,0%, 10,0%, 30,0% e 50,0% de Cr3+. O interesse no estudo deste sistema reside na existência de uma larga e intensa banda de luminescência na temperatura ambiente, que se estende do visível ao infravermelho próximo, podendo então ser utilizado como fonte de radiação sintonizável em dispositivos ópticos, optoeletrônicos e detectores, entre outros. Para a investigação das propriedades ópticas foram feitas medidas de luminescência, excitação e luminescência resolvida no tempo, na temperatura ambiente e a baixas temperaturas. Os resultados obtidos mostram largas bandas de luminescência atribuídas aos íons de Cr3+, ocupando dois sítios octaédricos não equivalentes. Os resultados também mostram que a intensidade integrada da luminescência, o baricentro da banda de emissão e o tempo de vida do estado luminescente variam com a concentração de impureza residente no sistema. Foram realizadas medidas de calor específico em função do campo magnético em uma larga faixa de temperatura, cujos resultados mostram o aparecimento do efeito Schottky a baixas temperaturas. Medidas de susceptibilidade magnética em funcão da temperatura também foram realizadas, e mostram um comportamento paramagnético, típico do íon impureza Cr3+, com um ordenamento magnético de curto alcance. Para a determinação das propriedades estruturais foram realizadas medidas de difração de nêutrons na temperatura ambiente.

Corrosão dos aços UNS S30400 e 31600 em meios simuladores de poros de concreto

Com o objetivo de investigar a influência que o molibdênio exerce nas propriedades das camadas passivas das armaduras de aços austeníticos, barras redondas dos aços UNS S30400 e 31600 foram submetidas à ação de soluções que simulam as que são encontradas nos poros de concreto. Para caracterizar o efeito do molibdênio na resistência daqueles aços à corrosão por pites, foram conduzidos ensaios de circuito aberto, polarização anódica, espectroscopia de impedância eletroquímica, análise de Mott-Schottky, tração em baixa taxa de deformação e análise das superfícies por microscopias óptica e eletrônica de varredura. Os resultados obtidos demonstram que, de uma forma geral, o aço UNS S30400 (sem molibdênio) apresentou maior resistência à corrosão localizada que o UNS S31600 (2% de Mo) nas soluções alcalinas cloretadas naturalmente aeradas, comportamento este inverso ao que se observa nos mesmos materiais quando submetidos a soluções cloretadas neutras ou ácidas.

A field effect transistor using highly nitrogen-doped CVD diamond for power device applications

A new idea of power device, which contains highly nitrogen-doped CVD diamond and Schottky contact, is proposed to actualise a power device with diamond. Two-dimensional simulation is conducted using ISE TCAD device simulator. While comparably high current is obtained in a transient simulation as expected, this current does not contribute to the drain-source current because of the symmetry of the device. Using an asymmetric structure or bias conditions, the device has high potential as an electric device for extremely high power, high frequency and high temperature. © 2003 Elsevier Science B.V. All rights reserved.

Theoretical investigation of CoSi2/Si1-xGex detectors: Influence of a Si tunneling barrier on the electro-optical characteristics

We present a theoretical investigation of the influence of a non-reacted Si layer on the transport and optical properties of CoSi2/Si1-xGex Schottky barrier diodes grown from Co/Si/Si1-xGex systems. The presence of this layer reduces the effect of the lowering of the Schottky barrier height which would be expected in a CoSi2/Si1-xGex. However, due to the small thickness of this Si layer, the charge carriers are able to tunnel through it. This tunneling process allows for a significant lowering of the Schottky barrier height and therefore an extension of the detection regime into the infrared. © 1996 American Institute of Physics.

Hydrothermally-grown ZnO nanowire tips for scanning tunnelling microscopy.

The probe tip is pivotal in determining the resolution and nature of features observed in the Scanning Tunnelling Microscope (STM). We have augmented a conventional Pt/Ir metallic tip with a hydrothermally grown ZnO nanowire (NW). Atomic resolution imaging of graphite is attained. Current-voltage (IV) characteristics demonstrate an asymmetry stemming from the unintentional n-type doping of the ZnO NW, whereas the expected Schottky barrier at the ZnO-Pt/Ir interface is shown to have negligible effect. Moreover the photoconductivity of the system is investigated, paving the way towards a photodetector capable of atomic resolution.

Near-ultraviolet zinc oxide nanowire sensor using low temperature hydrothermal growth.

Two near-ultraviolet (UV) sensors based on solution-grown zinc oxide (ZnO) nanowires (NWs) which are only sensitive to photo-excitation at or below 400 nm wavelength have been fabricated and characterized. Both devices keep all processing steps, including nanowire growth, under 100 °C for compatibility with a wide variety of substrates. The first device type uses a single optical lithography step process to allow simultaneous in situ horizontal NW growth from solution and creation of symmetric ohmic contacts to the nanowires. The second device type uses a two-mask optical lithography process to create asymmetric ohmic and Schottky contacts. For the symmetric ohmic contacts, at a voltage bias of 1 V across the device, we observed a 29-fold increase in current in comparison to dark current when the NWs were photo-excited by a 400 nm light-emitting diode (LED) at 0.15 mW cm(-2) with a relaxation time constant (τ) ranging from 50 to 555 s. For the asymmetric ohmic and Schottky contacts under 400 nm excitation, τ is measured between 0.5 and 1.4 s over varying time internals, which is ~2 orders of magnitude faster than the devices using symmetric ohmic contacts.

Photovoltaic measurements in carbon nanotube - Amorphous silicon core/shell nanowire

Carbon nanotube is one of the promising materials for exploring new concepts in solar energy conversion and photon detection. Here, we report the first experimental realization of a single core/shell nanowire photovoltaic device (2-4μm) based on carbon nanotube and amorphous silicon. Specifically, a multi-walled carbon nanotube (MWNTs) was utilized as the metallic core, on which n-type and intrinsic amorphous silicon layers were coated. A Schottky junction was formed by sputtering a transparent conducting indium-tin-oxide layer to wrap the outer shell of the device. The single coaxial nanowire device showed typical diode ratifying properties with turn-on voltage around 1V and a rectification ratio of 104 when biased at ±2V. Under illumination, it gave an open circuit voltage of ∼0.26V. Our study has shown a simple and useful platform for gaining insight into nanowire charge transport and collection properties. Fundamental studies of such nanowire device are important for improving the efficiency of future nanowire solar cells or photo detectors. © 2012 IEEE.

Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering

Band alignment of resistive random access memory (RRAM) switching material Ta2O5 and different metal electrode materials was examined using high-resolution X-ray photoelectron spectroscopy. Schottky and hole barrier heights at the interface between electrode and Ta2O 5 were obtained, where the electrodes consist of materials with low to high work function (Φ m, v a c from 4.06 to 5.93 eV). Effective metal work functions were extracted to study the Fermi level pinning effect and to discuss the dominant conduction mechanism. An accurate band alignment between electrodes and Ta2O5 is obtained and can be used for RRAM electrode engineering and conduction mechanism study. © 2013 American Institute of Physics.

Nanoplasmonics for guiding, focusing and detection applications

In this talk we demonstrate configurations and devices that allow plasmonic assisted guiding and confinement of electromagnetic energy at the nanoscale. We also demonstrate silicon plasmonic Schottky detector for telecom wavelengths. © 2011 OSA.

Nanoplasmonics for guiding, focusing and detection applications

In this talk we demonstrate configurations and devices that allow plasmonic assisted guiding and confinement of electromagnetic energy at the nanoscale. We also demonstrate silicon plasmonic Schottky detector for telecom wavelengths. ©2011 Optical Society of America.

Compact Reconfigurable Binary-Decision-Diagram Logic Circuit on a GaAs Nanowire Network

We describe a reconfigurable binary-decision-diagram logic circuit based on Shannon's expansion of Boolean logic function and its graphical representation on a semiconductor nanowire network. The circuit is reconfigured by using programmable switches that electrically connect and disconnect a small number of branches. This circuit has a compact structure with a small number of devices compared with the conventional look-up table architecture. A variable Boolean logic circuit was fabricated on an etched GaAs nanowire network having hexagonal topology with Schottky wrap gates and SiN-based programmable switches, and its correct logic operation together with dynamic reconfiguration was demonstrated.