Polymorphism in cocrystals of urea:4,4 `-bipyridine and salicylic acid:4,4 `-bipyridine

Polymorphic cocrystals of urea:4,4'-bipyridine and salicylic acid: 4,4'-bipyridine were obtained by crystallization from different solvents. The urea tape is a rare phenomenon in cocrystals but it is consistent in urea:4,4'-bipyridine polymorphic cocrystals. The polymorph obtained from MeCN has symmetrical N-H...N hydrogen bond distances on either side of the urea tape. However, the other form obtained from MeOH has unsymmetrical N-H...N hydrogen bond lengths. In the polymorphic cocrystals of salicylic acid:4,4'-bipyridine, the basic supramolecular synthon acid-pyridine is the same but the 3D packing is different. Both the polymorphic pairs of cocrystals come under the category of packing polymorphs. All polymorphs were characterized by single-crystal X-ray diffraction (SCXRD), PXRD, DSC, FT-IR and HSM. N-H...N and the acid-pyridine supramolecular synthons were insulated by FT-IR vibrational spectroscopy.

Comparative study of Eu3+ -activated LnOCl (Ln=La and Gd) phosphors and their Judd-Ofelt analysis

Eu3+-activated layered LnOCl (Ln=La and Gd) phosphors were synthesized by the conventional solid-state method at relatively low temperature (700 degrees C) and shorter duration of 2 h. The structural parameters were refined by the Rietveld refinement analysis and confirmed by the high resolution transmission electron microscopy (HRTEM). Both the compounds were crystallized in the tetragonal structure with space group P4/nmm (No. 129). The homogeneity of the elements were analyzed by TEM mapping and found to be uniformly distributed. The photoluminescence spectra revealed that the intensity of D-5(0)-> F-7(2) transition (619 nm) was more intense in Eu3+-activated GdOCl compared to LaOCl. This was due to the property of Gd3+ ions to act as an intermediate sublattice to facilitate the energy transfer to Eu3+ ions. Intensity parameters and radiative properties such as transition probabilities, radiative lifetime and branching ratio were calculated using the Judd-Ofelt theory. The CIE color coordinates result revealed that the Eu3+-activated GdOCl (0.641, 0.354) phosphor was close to the commercial red phosphors like, Y2O3:Eu3+ (0.645, 0.347), (Y2OS)-S-2:Eu3+ (0.647, 0.343) and National Television System Committee (NTSC) (0.67, 0.33). The results suggest that the present GdOCl:Eu3+ compound acts as a potential candidate for red phosphor materials.

Effect of humidity on microstructure and properties of YBCO film prepared by TFA-MOD method

Epitaxial YBCO superconducting films were deposited on the single crystal LaAlO3 (001) substrate by metal organic deposition method. All YBCO films were fired at 820 degrees C in humidity range of 2.6%-19.7% atmosphere. Microstructure of YBCO thin films was analyzed by means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). Superconducting properties of YBCO films were measured by four-probe method. XRD results showed that the second phase (such as BaF2)and a-axis-oriented grains existed in the films prepared at 2.6% humidity condition; a-axis-oriented grains increased in the film prepared at higher than 4.2% humidity condition; almost pure c-axias-oriented grains existed in the films fired at 4.2% humidity condition. Morphologies of the YBCO films showed that all films had a smooth and crack-free surface. YBCO film prepared at 4.2% humidity condition showed J(c) value of 3.3 MA/cm(2) at 77 K in self-field.

Estudo do efeito magnetocalórico em sistemas magnéticos com terras raras

O efeito magnetocalórico, base da refrigeração magnética, é caracterizado por duas quantidades: a variação isotérmica da entropia (ΔST) e a variação adiabática da temperatura (ΔTS); que são obtidas sob variações na intensidade de um campo magnético aplicado. Em sistemas que apresentam anisotropia magnética, pode‐se definir o efeito magnetocalórico anisotrópico, o qual, por definição, é calculado sob variações na direção de aplicação de um campo magnético cuja intensidade mantém‐se fixa, e é caracterizado por duas quantidades: a variação anisotrópico‐isotérmica da entropia (ΔSan) e a variação anisotrópico‐adiabática da temperatura (ΔTan). O efeito magnetocalórico e o efeito magnetocalórico anisotrópico foram estudados nos compostos intermetálicos formados por terras e outros materiais não magnéticos: RNi2, RNi5, RZn e Gd1‐nPrnAl2. Os cálculos foram feitos partindo de hamiltonianos modelo que incluem as interações de troca, Zeeman, de campo cristalino e quadrupolar.

Intense frequency upconversion fluorescence of Er3+/Yb3+-codoped novel potassium-barium-strontium-lead-bismuth glasses

Er3+/Yb3+-codoped potassium-barium-strontium-lead-bismuth glasses for developing potential upconversion lasers have been fabricated and characterized. Based on the results of energy transfer efficiency, the optimal Yb3+/Er3+ concentration ratio is found to be 5:1. Intense green and red emissions centered at 525, 546, and 657 run, corresponding to the transitions H-2(11/2) -> I-4(15/2), S-4(3/2) -> I-4(15/2), and F-4(9/2) -> I-4(15/2), respectively, were observed. The quadratic dependence of the 525, 546, and 657 nm emissions on excitation power indicates that a two-photon absorption process occurs under 975 nm excitation. The long-lived I-4(11/2) level is supposed to serve as the intermediate state responsible for the upconversion processes. (c) 2004 Elsevier B.V. All rights reserved.

Upconversion luminescence of Ce3+ doped BK7 glass by femtosecond laser irradiation

Near-infrared to visible upconversion luminescence was observed in a multicomponent silicate (BK7) glass containing Ce3+ ions under focused infrared femtosecond laser irradiation. The emission spectra show that the upconversion luminescence comes from the 4f-5d transition of the Ce3+ ions. The relationship between the intensity of the Ce3+ emission and the pump power reveals that a three-photon absorption predominates in the conversion process from the near-infrared into the blue luminescence. The analysis of the upconversion mechanism suggests that the upconversion luminescence may come from a three-photon simultaneous absorption that leads to a population of the 5d level in which the characteristic luminescence occurs.

Effect of bismuth oxide introduction on spectroscopic properties of Er3+/Yb3+ co-doped aluminophosphate glasses

The absorption spectra, emission spectra and infrared spectra of Er3+/Yb3+ co-doped xBi(2)O(3)-(65 - x)P2O5-4Yb(2)O(3)-11Al(2)O(3)-5BaO-15Na(2)O were measured and investigated. Spontaneous emission probability, radiative lifetime and branching ratios of Er3+ were calculated according to the Judd-Ofelt theory. The role of substitution of Bi2O3 for P2O5 on luminescence of Er3+/Yb3+ co-doped aluminophosphate glasses has been investigated. The calculated radiative lifetimes (tau(rad)) for I-4(13/2) and I-4(11/2) were decreasing with Bi2O3 content increases, whereas the measured total lifetime (tau(meas)) for I-4(13/2) showed linearly increasing trends. The effect of Bi2O3 introduction on OH- groups was also discussed according to the IR transmittance spectra of glasses. It was found that FWHM of glasses were not affected with the substitution of Bi2O3 for P2O5. The emission spectra intensity increased with Bi2O3 content due to the decreases of phonon energy and OH- content in glasses. (C) 2007 Elsevier B.V. All rights reserved.

Effect of La2O3 on microstructure and transmittance of transparent alumina ceramics

Optically transparent alumina ceramics were fabricated by conventional process and sintered without pressure in H-2 atmosphere. The results indicate that relative densities of alumina specimens increase to theoretical densities (T. D.) with increasing content of La2O3. With increasing holding time during sintering, much less pores and larger grains were found in the sintered alumina samples. Higher transmittance was achieved in alumina codoped with MgO and La2O3 as compared with that doped with MgO only. The total-transmittance of alumina sample is up to 86% at a wavelength range of 300 - 800 nm.

Spectral hole-burning of Eu3+: Y2SiO5 crystal at 579.62 mm

By using an Ar+ ion laser, a tunable Rh 6G dye laser(Linewidth : 0.5 cm(-1)) and a Coherent 899-21 dye laser as light sources and using a monochromator and a phase-locking amplifier, the optical properties of Eu3+ : Y2SiO5 crystal were detected. Persistent spectral hole burning (PSHB) were also observed in (5)Do-(7)Fo transition in the crystal at the temperature of 16 K. For 15 mW dye laser (Wavelength : 579.62 nm) burning the crystal for 0.1 s a spectral hole with about 80 MHz hole width were detected and the hole can been keep for longer than 10 h.

Effect of La3+ on microwave dielectric properties of (Pb0.45Ca0.55) (Fe0.5Nb0.5)O-3 ceramics

In this work, microwave dielectric properties of A-site substitution by La3+ in (Pb0.45Ca0.55) (Fe0.5Nb0.5) 03 system were investigated. Microwave dielectric properties of A-site charge unbalance substitution of [(Pb0.45Ca0.55)(1-x) La-x] (Fe0.5Nb0.5)O-3(+) (P45CLFN) were improved because the solid solution of small amount of surplus La3+ with (Pb, Ca)(2+) could eliminate oxygen vacancies, and the formation of secondary phase (pyrochlore) was also caused by surplus La3+. The decreasing of dielectric constant with the increase of La3+ content is due to the formation of pyrochlore. The grain size is changed slightly and Q(f) values (7000 similar to 7300 GHz) are almost unchanged at x = 0.02 similar to 0.10, but the temperature coefficient of resonant frequency (TCF) are increased and changed from negative to positive. TCF is zero at x 0.075 with Q(f) = 7267 GHz and K = 89. TCF of all specimens are within +/- 5 x 10(-6)degrees C-1.

Spectroscopic properties of Ce : YAP scintillation crystal grown by temperature gradient technique

Spectroscopic properties of Ce-doped yttrium orthoaluminate (Ce:YAlO3 or Ce:YAP) crystals grown by temperature gradient technique (TGT) were investigated, and the effects of the growth conditions on the properties were analyzed.. Methods of optical absorption (OA), photoluminescence (PL), photoluminescence decay (PLD), X-ray excited luminescence (XL) and cathodeluminescence (CL) were used in these investigations. The results showed that the absorption band peak at 202, 394 and 532 nm originated from F and F+ color center induced by the weak reducing growth atmosphere, green emission band near 500 ran derived from Ce3+ -Ce3+ pairs and band at 650 similar to 850 run from some unintentional impurity in crystals.

Investigação do efeito magnetocalórico convencional e anisotrópico no sistema Er(1-y)Ho(y)N

O efeito magnetocalórico, base da refrigeração magnética, é caracterizado por duas quantidades: a variação isotérmica da entropia (ΔST) e a variação adiabática da temperatura (ΔTad) as quais podem ser obtidas sob variações na intensidade de um campo magnético aplicado. Em sistemas que apresentam anisotropia magnética, pode‐se definir o efeito magnetocalórico anisotrópico, o qual, por definição, é calculado através da variação na direção de aplicação de um campo magnético cuja intensidade se mantém fixa. Nos materiais de nosso interesse, o efeito magnetocalórico é estudado teoricamente partindo de um hamiltoniano modelo que leva em conta a rede magnética (que pode ser composta por diversas sub-redes magnéticas acopladas), rede cristalina e a dinâmica dos elétrons de condução. No hamiltoniano magnético são consideradas as interações de troca, Zeeman e campo cristalino (esta ultima responsável pela anisotropia magnética). Recentemente, estudamos o efeito magnetocalórico convencional e o efeito magnetocalórico anisotrópico nos compostos mononitretos com terras-raras, a saber: Ho(y)Er(1-y)N para as concentrações y= 0,1,0.5 e 0.75. Comparações entre nossos resultados teóricos e os dados experimentais para o EMC foram bastante satisfatórias [3,9]. Além disso, diversas predições teóricas como a existência de uma fase ferrimagnética no sistema Ho(y)Er(1-y)N (para a concentração y=0.5) e reorientações de spin nas sub-redes do Ho e Er foram feitas [25].

Electrical properties and electroluminescence of 4H-SiC p-n junction diodes

Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001) substrates was performed by using the step-controlled epitaxy technique in a newly developed low-pressure hot-wall CVD (LP-HWCVD) system with a horizontal air-cooled quartz tube at around 1500 degreesC and 1.33 x 10(4) Pa by employing SiH4 + C2H4 + H-2. In-situ doping during growth was carried out by adding NH3 gas into the precursor gases. It was shown that the maximum Hall mobility of the undoped 4H-SiC epilayers at room temperature is about 430 cm(2) (.) V-1 (.) s(-1) with a carrier concentration of similar to 10(16) cm(-3) and the highest carrier concentration of the N-doped 4H-SiC epilayer obtained at NH3 flow rate of 3 sccm is about 2.7 x 10(21) cm(-3) with a mobility of 0.75 cm(2) (.) V-1 (.) s(-1). SiC p-n junctions were obtained by epitaxially growing N-doped 4H-SiC epilayers on Al-doped 4H-SiC substrates. The C - V characteristics of the diodes were linear in the 1/C-3 - V coordinates indicating that the obtained p-n junctions were graded with a built-in voltage of 2.7 eV. The room temperature electroluminescence spectra of 4H-SiC p-n junctions are studied as a function of forward current. The D-A pair recombination due to nitrogen donors and the unintentional, deep boron center is dominant at low forward bias, while the D-A pair recombination due to nitrogen donors and aluminum acceptors are dominant at higher forward biases. The p-n junctions could operate at temperature of up to 400 degreesC, which provides a potential for high-temperature applications.

Growth of ZnO single crystal by chemical vapor transport method

ZnO crystals were grown by CVT method in closed quartz tube under seeded condition. Carbon was used as a transport agent to enhance the chemical transport of ZnO in the growth process. ZnO single crystals were grown by using GaN/sapphire and GaN/Si wafer as seeds. The property and crystal quality of the ZnO single crystals was studied by photoluminescence spectroscopy and X-ray diffraction technique.

Growth and characterization of semi-insulating GaN films grown by MOCVD

High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arc-min, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 degrees C was measured to be approximate 10(9) and 10(6) Omega(.)cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.