953 resultados para Nickel phthalocyanine


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Liquid phase hydrodechlorination of chlorinated benzenes was studied over Ni/active carbon (Ni/AC), Ni/gamma-Al2O3, Ni/SiO2 and Raney Ni. The complete dechlorination of chlorobenzene (ClBz) was realized at 333-343 K on Ni/AC under hydrogen atmosphere of 1.0 MPa in the presence of alkaline hydroxide. Dichloro- and trichlorobenzenes were also hydrodechlorinated with 50-95% yields of benzene under the similar conditions, as above. The reaction follows zero-order to ClBz concentration and 1.9 order to hydrogen pressure. The reaction does not proceed in the absence of alkaline hydroxide, suggesting the complete coverage of active nickel surface with produced chlorine and the removal of the chlorine ion with hydroxide ion as a rate-limiting step. The active catalysts were characterized by H-2 chemisorption and transmission electron microscopy techniques. The apparent activity strongly depends on the active area of nickel on catalyst surface. (C) 2004 Published by Elsevier B.V.

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The heat capacity (C-p) of nanocrystalline nickel (nc-Ni, 40 mn crystallite size) has been measured over the temperature range of 78-370 K with a high-resolution automated adiabatic calorimeter. The measured results are compared with the C-p values of the corresponding coarse-grained crystal, and an enhancement of heat capacity of the nanocrystalline nickel was observed to be 2-4% in the temperature range between 100 and 370 K. The thermal stability of the nanocrystalline nickel sample was determined by a differential scanning calorimeter and a thermogravimetric system. The melting point of nc-Ni is the same as that of the corresponding coarse-grained crystalline nickel and the sample is stable at temperature lower than 500 K. (C) 2002 Elsevier Science B.V. All rights reserved.

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The validation of a fully automated dissolved Ni monitor for in situ estuarine studies is presented, based on adsorptive cathodic stripping voltammetry (AdCSV). Dissolved Ni concentrations were determined following on-line filtration and UV digestion, and addition of an AdCSV ligand (dimethyl glyoxime) and pH buffer (N-2-hydroxyethylpiperazine-N′-2-ethanesulphonic acid). The technique is capable of up to six fully quantified Ni measurements per hour. The automated in situ methodology was applied successfully during two surveys on the Tamar estuary (south west Britain). The strongly varying sample matrix encountered in the estuarine system did not present analytical interferences, and each sample was quantified using internal standard additions. Up to 37 Ni measurements were performed during each survey, which involved 13 h of continuous sampling and analysis. The high resolution data from the winter and summer tidal cycle studies allowed a thorough interpretation of the biogeochemical processes in the studied estuarine system.

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We investigated the electrical instability of vanadyl-phthalocyanine (VOPc) thin-film transistors (TFTs) at various temperatures. The results demonstrate a slow threshold voltage shift in the bias stress process and a rapid recovery after the removal of bias stress, which indicates that a slower degradation process occurs in the on state while a faster removal in the off state of VOPc TFTs. The shift of threshold voltage comes from traps generated at the organic/dielectrics interface. Additionally, a relaxation time of 10(7) s was obtained at room temperature according to the stretched exponential model, which is comparable to a-Si: H TFTs. Therefore, VOPc TFTs are suitable to be applied in flat panel displays.

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Air-stable n-type field effect transistors were fabricated with an axially oxygen substituted metal phthalocyanine, tin (IV) phthalocyanine oxide (SnOPc), as active layers. The SnOPc thin films showed highly crystallinity on modified dielectric layer, and the electron field-effect mobility reached 0.44 cm(2) V-1 s(-1). After storage in air for 32 days, the mobility and on/off ratio did not obviously change. The above results also indicated that it is an effective approach of seeking n-type semiconductor by incorporating the appropriate metal connected with electron-withdrawing group into pi-pi conjugated system.

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Copper phthalocyanine organic thin-film transistors (OTFTs) were fabricated with top-gate geometry and the effects of different gate dielectrics on the transport proper-ties in OTFTs were studied. The mobility was found to be gate voltage dependent and the results showed that besides the charge density in the accumulation layer, the energetic disorder induced by gate dielectrics played an important role in determining the field-effect mobility in OTFTs.

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An organic integrated pixel with organic light-emitting diodes (OLEDs) driven by organic thin film transistors (OTFTs) is fabricated by a greatly simplified processing. The OTFTs are based on copper phthalocyanine as the active medium and fabricated on indium-tin-oxide (ITO) glass with top-gate structure, thus an organic integrated pixel is easily made by integrating OLED with OTFT. The OTFTs show field-effect mobility of 0.4 cm(2) /Vs and on/off ratio of 10(3) order. The OLED is driven well and emits the brightness as large as 2100cd/m(2) at a current density of 14.6 mu A/cm(2) at -19.7 V gate voltage. This simple device structure is promising in the future large-area flexible OLED displays.

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Weak epitaxy growth (WEG) can afford high-mobility thin films of disk-like organic semiconductor of which mobility is up to the level of the corresponding single crystals. We investigated the WEG behavior and mechanism of planar phthalocyanine in the model system of metal-free phthalocyanine (H2Pc) grown on p-sexiphenyl (p-6P) ultrathin films (monolayers and double layers). Highly oriented H2Pc films with molecules standing up exhibited two kinds of different in-plane orientations, i.e., three sets of in-plane orientations and only one set of in-plane orientation, on p-6P monolayer and double-layer films, respectively.