985 resultados para Dolet, Etienne, 1509-1546.


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We verify that the magnetic suppression of intersubband LO or LA phonon scattering can give rise to a noticeable nonthermal occupation in higher-lying subbands. This is clearly determined by the relative intensity ratio of the interband photoluminescence spectra for the E-2 - HH1 and E-1 - HH1 transitions. The observed phenomenon may provide an effective method to control the intersubband scattering rate, which is a key factor of the so-called quantum cascade lasers. This is helpful for the population inversion between both the subbands in quantum wells.

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We report the structural and optical characteristics of InAs quantum dots (QDs) grown on GaAs (311)A substrates. Atomic force microscopic result shows that QDs on (311)A surface exhibit a nonconventional, faceted, arrowhead-like shapes aligned in the [233] direction. The photoluminescence (PL) intensity, peak position and the full width at half maxinum (FWHM) are all closely related to the measurement temperature. The fast redshift of PL energy and monotonous decrease of linewidth with increasing temperature were observed and explained by carriers being thermally activated to the barrier produced by the wetting layer and then being retrapped and recombined in energetically lower-lying QDs states. This model explains our results well.

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在人工气候室水培条件下,以玉米(ZeamaysL.)杂交种F1代户单4号及其母本天四和父本478为材料,用细胞压力探针技术研究了正常供水和PEG-6000模拟–0.2MPa水分胁迫条件下,玉米根皮层细胞水分关系参数的基因型差异。结果表明,根皮层细胞的直径、长度和体积均为F1代>母本>父本;正常供水条件下3个玉米品种的根皮层细胞膨压均在0.6MPa左右且品种间差异不显著,水分胁迫抑制了细胞的延伸生长且F1代和母本的细胞膨压显著高于父本;根皮层细胞壁体积弹性模量均为父本>母本>F1代,水分胁迫条件下的品种间差异显著;与正常供水条件相比,水分胁迫条件下细胞膨压显著降低,而弹性模量则大幅度提高;在两种水分条件下,水分跨细胞膜运转的半时间均为父本>母本>F1代,且半时间在水分胁迫条件下均显著高于正常供水条件下;HgCl2处理引起了半时间的延长,2-巯基乙醇则部分逆转了HgCl2的效应;在两种水分条件下,根皮层细胞水导均为F1代>母本>父本且品种间差异显著,水分胁迫则显著降低了细胞水导。试验证明杂交种F1代的细胞水平根系吸水能力优于亲本,体现了杂种优势。

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介绍了通用神经计算机CASSANDRA-Ⅱ中单节拍浮点运算神经元的硬件设计方法.基于通用超曲面神经元模型,以组合电路与EPROM查表分别实现浮点数加法、乘法及p次幂运算,从而实现了单节拍内完成浮点运算|W(X-Y)|p的神经元组合逻辑设计.该设计使通用神经计算机硬件具有更强的适应能力和更好的网络性能.

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Erbium-doped silica glasses were made by sol-gel process. Intensive photoluminescence (PL) spectra from the Er-doped silica glasses at room temperature were measured. A broadband peak at 1535 ma, corresponding to the I-4(13/2)-I-4(15/2) transition, its full width at half-maximum (FWHM) of 10 nm, and a shoulder at 1546 nm in the PL spectra were observed. At lower temperatures, main line of 1535 nm and another line of 1552 Mn instead of 1546 nm appear. So two types of luminescence centers must exist in the samples at different temperature. The intensity of main line does not decrease obviously with increasing temperature. By varying the Er ion concentration in the range of 0.2 wt% - 5wt%, the highest photoluminescence intensity was obtained at 0.2wt% erbium doped concentration. Luminescence intensity decreases with increasing erbium concentration. Cooperative upconversion was used to explain the concentration quenching of luminescence from silica glass with high erbium concentration. Extended X-ray absorption fine structure measurements were carried out. It was found that the majority of the erbium impurities in the glasses have a local structure of eight first neighbor oxygen atoms at a mean distance of 0.255 nm, which is consistent with the typical coordination structure of rare earth ion.