Electrochemical studies of polyaniline in a gel polymer electrolyte - High energy and high power characteristics of a solid-state redox supercapacitor

Studies on redox supercapacitors employing electronically conducting polymers are of great importance for hybrid power sources and pulse power applications. In the present study, polyaniline (PANI) has been potentiodynamically deposited on stainless steel substrate and characterized in a gel polymer electrolyte (GPE). Use of the GPE facilitates a voltage limit of the capacitor to 1 V, instead of 0.75 V in aqueous electrolytes. From charge-discharge studies of the solid-state PANI capacitors, a specific capacitance of 250 F g(-1) has been obtained at a specific power of 7.5 kW kg(-1) of PANI. The values of specific capacitance and specific power are considerably higher than those reported in the literature. High energy and high power characteristics of the PANI are presented. (C) 2002 The Electrochemical Society.

Fabrication and evaluation of 450 F electrochemical redox supercapacitors using inexpensive and high-performance, polyaniline coated, stainless-steel electrodes

Redox supercapacitors using polyaniline (PANI) coated. stainless-steel (SS) electrodes have been assembled and characterized. PANI has been deposited on SS substrate by a potentiodynamic method from an acidic electrolyte which contains aniline monomer. By employing stacks of electrodes, each with a geometrical area of 24 cm(2), in acidic perchlorate electrolyte, a capacitance value of about 450 F has been obtained over a long cycle-life. Characterization studies have been carried out by galvanostatic charge-discharge cycling of the capacitors singly, as well as in series and parallel configurations. Various electrical parameters have been evaluated. Use of the capacitors in parallel with a battery for pulse-power loads. and also working of a toy fan connected to the charged capacitors have been demonstrated. A specific capacitance value of about 1300 F g(-1) of PANI has been obtained at a discharge power of about 0.5 kW kg(-1). This value is several times higher than those reported in the literature for PANI and is, perhaps, the highest value known for a capacitor material. The inexpensive SS substrate and the high-capacitance PANI are favorable factors for commercial exploitation. (C) 2002 Elsevier Science B.V. All rights reserved.

Potentiodynamically deposited polyaniline on stainless steel - Inexpensive, high-performance electrodes for electrochemical supercapacitors

Polyaniline (PANI) has been studied as an active material for electrochemical capacitors. Polymerization of aniline to PANI has been carried out potentiodynamically on a stainless steel (SS) substrate, instead of Pt-based substrates generally employed for this application. The PANI/SS electrodes have been evaluated by assembling symmetrical capacitors in NaClO(4) + HClO(4) mixed electrolyte and subjecting them to galvanostatic charge/discharge cycles between 0 and 0.75 V. The effect of substrate has been assessed by comparing the capacitance of PANI/SS and PANI/Pt electrodes. The capacitance of PANI/SS electrode is higher than that of PANI/Pt electrode by several times. The effect of sweep rate of potentiodynamic deposition of PANI/SS on capacitance has been investigated. At a power density of 0.5 kW kg(-1), a capacitance value of 815 F g(-1) of PANI is obtained for the deposition sweep rate of 200 mV s(-1). Increase in thickness of PANI on the SS substrate results in an increase in capacitance of PANI. This value of capacitance is the highest ever reported for any electrochemical capacitor material. Thus, in addition to a favorable economic aspect involved in using SS instead of Pt or Pt-based substrate, the advantage of higher capacitance of PANI has also been achieved. (C) 2002 The Electrochemical Society.

Structural vibration control using resistively shunted piezoceramics

Application of piezoceramic materials in actuation and sensing of vibration is of current interest. Potential and more popular applications of piezoceramics are probably in the field of active vibration control. However, the objective of this work is to investigate the effect of shunted piezoceramics as passive vibration control devices when bonded to a host structure. Resistive shunting of a piezoceramic bonded to a cantilevered duralumin beam has been investigated. The piezoceramic is connected in parallel to an electrical network comprising of resistors and inductors. The piezoceramic is a capacitor that stores and discharges electrical energy that is transformed from the mechanical motion of the structure to which it is bonded. A resistor across the piezoceramic would be termed as a resistively shunted piezoceramic. Similarly, an inductor across the piezoceramic is termed as a resonantly shunted piezoceramic. In this study, the effect of resistive shunting on the nature of damping enhancement to the host structure has been investigated. Analytical studies are presented along with experimental results.

Variable-speed wind power generation using doubly fed wound rotor induction machine - A comparison with alternative schemes

In this paper, a wind energy conversion system (WECS) using grid-connected wound rotor induction machine controlled from the rotor side is compared with both fixed speed and variable speed systems using cage rotor induction machine. The comparison is done on the basis of (I) major hardware components required, (II) operating region, and (III) energy output due to a defined wind function using the characteristics of a practical wind turbine. Although a fixed speed system is more simple and reliable, it severely limits the energy output of a wind turbine. In case of variable speed systems, comparison shows that using a wound rotor induction machine of similar rating can significantly enhance energy capture. This comes about due to the ability to operate with rated torque even at supersynchronous speeds; power is then generated out of the rotor as well as the stator. Moreover, with rotor side control, the voltage rating of the power devices and dc bus capacitor bank is reduced. The size of the line side inductor also decreasesd. Results are presented to show the substantial advantages of the doubly fed system.

Interface states of laser ablated BaTiO3 and Ba0.9Ca0.1TiO3 thin films in MFS structure determined by DLTS and C – V technique

BaTiO3 and Ba0.9Ca0.1TiO3 thin films were deposited on the p – type Si substrate by pulsed excimer laser ablation technique. The Capacitance – Voltage (C-V) measurement measured at 1 MHz exhibited a clockwise rotating hysteresis loop with a wide memory window for the Metal – Ferroelectric – Semiconductor (MFS) capacitor confirming the ferroelectric nature. The low frequency C – V measurements exhibited the response of the minority carriers in the inversion region while at 1 MHz the C – V is of a high frequency type with minimum capacitance in the inversion region. The interface states of both the MFS structures were calculated from the Castagne – Vaipaille method (High – low frequency C – V curve). Deep Level Transient Spectroscopy (DLTS) was used to analyze the interface traps and capture cross section present in the MFS capacitor. There were distinct peaks present in the DLTS spectrum and these peaks were attributed to the presence of the discrete interface states present at the semiconductor – ferroelectric interface. The distribution of calculated interface states were mapped with the silicon energy band gap for both the undoped and Ca doped BaTiO3 thin films using both the C – V and DLTS method. The interface states of the Ca doped BaTiO3 thin films were found to be higher than the pure BaTiO3 thin films.

MFIS and MFS structures using SrBi2Ta2O9 thin films for the FRAM applications

Recently there is an increasing demand and extensive research on high density memories, in particular to the ferroelectric random access memory composed of 1T/1C (1 transistor/1 capacitor) or 2T/2C. FRAM's exhibit fast random acess in read/write mode, non - volatility and low power for good performance. An integration of the ferroelectric on Si is the key importance and in this regard, there had been various models proposed like MFS, MFIS, MFMIS structure etc., Choosing the proper insulator is very essential for the better performance of the device and to exhibit excellent electrical characteristics. ZrTiO4 is a potential candidate because of its excellent thermal stability and lattice match on the Si substrate. SrBi2Ta2O9 and ZrTiO4 thin films were prepared on p - type Si substrate by pulsed excimer laser ablation technique. Optimization of both ZT and SBT thin films in MFS and MFIS structure had been done based on the annealing, oxygen partial pressures and substrate temperatures to have proper texture of the thin films. The dc leakage current, P - E hysteresis, capacitance - voltage and conductance - voltage measurement were carried out. The effect of the frequency dependence on MFIS structure was observed in the C – V curve. It displays a transition of C - V curve from high frequency to low frequency curve on subjection to varied frequencies. Density of interface states has been calculated using Terman and high - low frequency C - V curve. The effect of memory window in the C - V hysteresis were analysed in terms of film thickness and annealing temperatures. DC conduction mechanism were analysed in terms of poole - frenkel, Schottky and space charge limited conduction separately on MFS, MIS structure.

MFIS and MFS structures using SrBi2Ta2O9 thin films for the FRAM applications

Recently there is an increasing demand and extensive research on high density memories, in particular to the ferroelectric random access memory composed of 1T/1C (1 transistor/1 capacitor) or 2T/2C. FRAM's exhibit fast random acess in read/write mode, non - volatility and low power for good performance. An integration of the ferroelectric on Si is the key importance and in this regard, there had been various models proposed like MFS, MFIS, MFMIS structure etc., Choosing the proper insulator is very essential for the better performance of the device and to exhibit excellent electrical characteristics. ZrTiO4 is a potential candidate because of its excellent thermal stability and lattice match on the Si substrate. SrBi2Ta2O9 and ZrTiO4 thin films were prepared on p - type Si substrate by pulsed excimer laser ablation technique. Optimization of both ZT and SBT thin films in MFS and MFIS structure had been done based on the annealing, oxygen partial pressures and substrate temperatures to have proper texture of the thin films. The dc leakage current, P - E hysteresis, capacitance - voltage and conductance - voltage measurement were carried out. The effect of the frequency dependence on MFIS structure was observed in the C – V curve. It displays a transition of C - V curve from high frequency to low frequency curve on subjection to varied frequencies. Density of interface states has been calculated using Terman and high - low frequency C - V curve. The effect of memory window in the C - V hysteresis were analysed in terms of film thickness and annealing temperatures. DC conduction mechanism were analysed in terms of poole - frenkel, Schottky and space charge limited conduction separately on MFS, MIS structure.

A Low Power Frequency Multiplication Technique for Zigbee Transceiver

A low-power frequency multiplication technique, developed for ZigBee (IEEE 802.15.4) like applications is presented. We have provided an estimate for the power consumption for a given output voltage swing using our technique. The advantages and disadvantages which determine the application areas of the technique are discussed. The issues related to design, layout and process variation are also addressed. Finally, a design is presented for operation in 2.405-2.485-GHz band of ZigBee receiver. SpectreRF simulations show 30% improvement in efficiency for our circuit with regard to conversion of DC bias current to output amplitude, against a LC-VCO. To establish the low-power credentials, we have compared our circuit with an existing technique; our circuit performs better with just 1/3 of total current from supply, and uses one inductor as against three in the latter case. A test chip was implemented in UMC 0.13-mum RF process with spiral on-chip inductors and MIM (metal-insulator-metal) capacitor option.

Design and developement of a pulsed power system for a Vircator based HPM source

Pulse Forming Line (PFL) based high voltage pulsed power systems are well suited for low impedance High Power Microwave (HPM) sources such as a virtual cathode oscillator (VIRCATOR) operating in nanosecond regimes. The system under development consists of a primary voltage source that charges the capacitor bank of a Marx pulser over a long time duration. The Marx pulser output is then conditioned by a PFL to match the requirement of the HPM diode load. This article describes the design and construction of an oil insulated pulse forming line for a REB (Relativistic Electron Beam) diode used in a VIRCATOR for the generation of high power microwaves. Design of a 250 kV/10 kA/60 ns PFL, including the PSPICE simulation for various load conditions are described.

Topology Optimization of Electrostatically Actuated Micromechanical Structures with Accurate Electrostatic Modeling of the Interpolated Material Model

In this paper, we present a novel formulation for performing topology optimization of electrostatically actuated constrained elastic structures. We propose a new electrostatic-elastic formulation that uses the leaky capacitor model and material interpolation to define the material state at every point of a given design domain continuously between conductor and void states. The new formulation accurately captures the physical behavior when the material in between a conductor and a void is present during the iterative process of topology optimization. The method then uses the optimality criteria method to solve the optimization problem by iteratively pushing the state of the domain towards that of a conductor or a void in the appropriate regions. We present examples to illustrate the ability of the method in creating the stiffest structure under electrostatic force for different boundary conditions.

Low loss and frequency (1 kHz–1 MHz) independent dielectric characteristics of 3BaO–3TiO2–B2O3 glasses

X-ray powder diffraction along with differential thermal analysis carried out on the as-quenched samples in the 3BaO–3TiO2–B2O3 system confirmed their amorphous and glassy nature, respectively. The dielectric constants in the 1 kHz–1 MHz frequency range were measured as a function of temperature (323–748 K). The dielectric constant and loss were found to be frequency independent in the 323–473 K temperature range. The temperature coefficient of dielectric constant was estimated using Havinga’s formula and found to be 16 ppm K−1. The electrical relaxation was rationalized using the electric modulus formalism. The dielectric constant and loss were 17±0.5 and 0.005±0.001, respectively at 323 K in the 1 kHz–1 MHz frequency range which may be of considerable interest to capacitor industry.

Performance of Tuned Half-Wave-Length Power Transmission Lines

The basic concepts of tuned half-wave lines were covered by Hubert and Gent [1]. In this paper the problem of overvoltages during faults and the stability of the system incorporating such tuned lines are discussed. The type of tuning bank and the line arrangements that will be satisfactory from the point of view of stability are suggested. The behavior of a line tuned by distributed capacitor is analyzed, and its performance is compared with the other type of tuned line.

Analysis of ferro-oscillations in power systems

The paper presents an analysis of ferro-oscillations in capacitor voltage transformers and series-compensated e.h.v. lines. The dual-input describing function is adopted to show the regions of existence and the influence of system parameters on such oscillations. A complete analytical method suitable for digital computation has been developed for determining the amplitudes of these oscillations.

Effectiveness of Series Capacitors in Long Distance Transmission Lines

The effectiveness of series capacitors used with long distance transmission lines in improving system stability is analyzed. Compensation efficiency is defined as the effectiveness of series capacitors. The influence of various factors on compensation efficiency such as capacitor location, line length, and degree of series compensation is investigated. Proper use of shunt reactors with series capacitors, in addition to limiting power frequency over- voltages, increases the maximum power transfer. Analytical expressions are included to aid in the calculation of compensation efficiency for a few typical cases. Curves are also presented indicating the critical value of shunt Mvar required for various degrees of series compensation and line lengths.