Unconventional metallicity and giant thermopower in a strongly interacting two-dimensional electron system

We present thermal and electrical transport measurements of low-density (10(14) m(-2)), mesoscopic two-dimensional electron systems (2DESs) in GaAs/AlGaAs heterostructures at sub-Kelvin temperatures. We find that even in the supposedly strongly localized regime, where the electrical resistivity of the system is two orders of magnitude greater than the quantum of resistance h/e(2), the thermopower decreases linearly with temperature indicating metallicity. Remarkably, the magnitude of the thermopower exceeds the predicted value in noninteracting metallic 2DESs at similar carrier densities by over two orders of magnitude. Our results indicate a new quantum state and possibly a novel class of itinerant quasiparticles in dilute 2DESs at low temperatures where the Coulomb interaction plays a pivotal role.

Evidence of novel quasiparticles in a strongly interacting two-dimensional electron system: giant thermopower and metallic behaviour

We report thermopower (S) and electrical resistivity (rho (2DES) ) measurements in low-density (10(14) m(-2)), mesoscopic two-dimensional electron systems (2DESs) in GaAs/AlGaAs heterostructures at sub-Kelvin temperatures. We observe at temperatures a parts per thousand(2)0.7 K a linearly growing S as a function of temperature indicating metal-like behaviour. Interestingly this metallicity is not Drude-like, showing several unusual characteristics: (i) the magnitude of S exceeds the Mott prediction valid for non-interacting metallic 2DESs at similar carrier densities by over two orders of magnitude; and (ii) rho (2DES) in this regime is two orders of magnitude greater than the quantum of resistance h/e (2) and shows very little temperature-dependence. We provide evidence suggesting that these observations arise due to the formation of novel quasiparticles in the 2DES that are not electron-like. Finally, rho (2DES) and S show an intriguing decoupling in their density-dependence, the latter showing striking oscillations and even sign changes that are completely absent in the resistivity.

Micro-Raman and photoluminescence studies of self-assembled quantum well microtubes on GaAs substrate

The Semiconductor Quantum Well (QW) microtubes have been fabricated by strain-induced self assembling technique. Three types of multilayer structures have consisted of GaAs/InxGa1-xAs strained layers containing with various thickness of Monolayers of (GaAs/AlGaAs) QW were grown by Varian Gen II Molecular Beam Epitaxy (MBE) on the GaAs (100) substrate. The shape of the rolled up microtubes provide a clear idea about the formation of three dimensional micro- and nanostructures. Micro-Raman and photoluminescence (PL) studies were performed to the QW microtubes and as compared with their grown area on the GaAs substrate. The results of Raman spectra show the frequency shift of phonon modes measured in tube and compared with the grown area due to residual strain. The PL peaks of the microtube were red-shifted due to the strain effect and transition of bandgap from Type-II to Type-I. (C) 2013 Elsevier B.V. All rights reserved.

Electrostatic modulation of periodic potentials in a two-dimensional electron gas: from antidot lattice to quantum dot lattice

We use a dual gated device structure to introduce a gate-tuneable periodic potential in a GaAs/AlGaAs two dimensional electron gas (2DEG). Using only a suitable choice of gate voltages we can controllably alter the potential landscape of the bare 2DEG, inducing either a periodic array of antidots or quantum dots. Antidots are artificial scattering centers, and therefore allow for a study of electron dynamics. In particular, we show that the thermovoltage of an antidot lattice is particularly sensitive to the relative positions of the Fermi level and the antidot potential. A quantum dot lattice, on the other hand, provides the opportunity to study correlated electron physics. We find that its current-voltage characteristics display a voltage threshold, as well as a power law scaling, indicative of collective Coulomb blockade in a disordered background.

Evidence of quantum lateral confinement in side-gated resonant tunnelling diodes formed by patterned substrate regrowth

MBE regrowth on patterned np-GaAs wafers has been used to fabricate GaAs/AlGaAs double barrier resonant tunnel diodes with a side-gate in the plane of the quantum well. The physical diameters vary from 1 to 20 μm. For a nominally 1 μm diameter diode the peak current is reduced by more than 95% at a side-gate voltage of -2 V at 1.5 K, which we estimate corresponds to an active tunnel region diameter of 75 nm ± 10 nm. At high gate biases additional structure appears in the conductance data. Differential I-V measurements show a linear dependence of the spacing of subsidiary peaks on gate bias indicating lateral quantum confinement. © 1996 American Institute of Physics.

Tunneling-induced large cross-phase modulation in an asymmetric quantum well

We propose an asymmetric double AlGaAs/GaAs quantum well structure with a common continuum to generate a large cross-phase modulation (XPM). It is found, owing to resonant tunneling, that a large XPM can be achieved with vanishing linear and two-photon absorptions. (c) 2007 Optical Society of America.

High fidelity probe and mitigation of mirror thermal fluctuations

Thermal noise arising from mechanical loss in high reflective dielectric coatings is a significant source of noise in precision optical measurements. In particular, Advanced LIGO, a large scale interferometer aiming to observed gravitational wave, is expected to be limited by coating thermal noise in the most sensitive region around 30–300 Hz. Various theoretical calculations for predicting coating Brownian noise have been proposed. However, due to the relatively limited knowledge of the coating material properties, an accurate approximation of the noise cannot be achieved. A testbed that can directly observed coating thermal noise close to Advanced LIGO band will serve as an indispensable tool to verify the calculations, study material properties of the coating, and estimate the detector’s performance.

This dissertation reports a setup that has sensitivity to observe wide band (10Hz to 1kHz) thermal noise from fused silica/tantala coating at room temperature from fixed-spacer Fabry–Perot cavities. Important fundamental noises and technical noises associated with the setup are discussed. The coating loss obtained from the measurement agrees with results reported in the literature. The setup serves as a testbed to study thermal noise in high reflective mirrors from different materials. One example is a heterostructure of Al_xGa_1−xAs (AlGaAs). An optimized design to minimize thermo–optic noise in the coating is proposed and discussed in this work.

大功率半导体激光器热弛豫时间的测量

根据脉冲工作状态下半导体激光器激射光谱随结温升高而发生红移的原理，提出了一种测试半导体激光器热弛豫时间的新方法——利用调节取样积分器（Boxcar）取样门，测量光信号脉冲内不同时刻的时间分辨光谱。采用此方法对TO封装和厘米-靶条（cm—Bar）阵列的AlGaAs／GaAs半导体激光器的动态热特性进行了测试，得到其热弛豫时间分别为66μs和96μs。

Thermopower in Two-Dimensional Electron Systems

The subject of this thesis is the measurement and interpretation of thermopower in high-mobility two-dimensional electron systems (2DESs). These 2DESs are realized within state-of-the-art GaAs/AlGaAs heterostructures that are cooled to temperatures as low as T = 20 mK. Much of this work takes place within strong magnetic fields where the single-particle density of states quantizes into discrete Landau levels (LLs), a regime best known for the quantum Hall effect (QHE). In addition, we review a novel hot-electron technique for measuring thermopower of 2DESs that dramatically reduces the influence of phonon drag.

Early chapters concentrate on experimental materials and methods. A brief overview of GaAs/AlGaAs heterostructures and device fabrication is followed by details of our cryogenic setup. Next, we provide a primer on thermopower that focuses on 2DESs at low temperatures. We then review our experimental devices, temperature calibration methods, as well as measurement circuits and protocols.

Latter chapters focus on the physics and thermopower results in the QHE regime. After reviewing the basic phenomena associated with the QHE, we discuss thermopower in this regime. Emphasis is given to the relationship between diffusion thermopower and entropy. Experimental results demonstrate this relationship persists well into the fractional quantum Hall (FQH) regime.

Several experimental results are reviewed. Unprecedented observations of the diffusion thermopower of a high-mobility 2DES at temperatures as high as T = 2 K are achieved using our hot-electron technique. The composite fermion (CF) effective mass is extracted from measurements of thermopower at LL filling factor ν = 3/2. The thermopower versus magnetic field in the FQH regime is shown to be qualitatively consistent with a simple entropic model of CFs. The thermopower at ν = 5/2 is shown to be quantitatively consistent with the presence of non-Abelian anyons. An abrupt collapse of thermopower is observed at the onset of the reentrant integer quantum Hall effect (RIQHE). And the thermopower at temperatures just above the RIQHE transition suggests the existence of an unconventional conducting phase.

基于电光材料的光学相控阵技术研究进展

综述了基于电光材料的光学相控阵(OPA)的研究进展。介绍了光学相控阵技术的基本原理以及不同电光材料(铌酸锂电光晶体,AlGaAs光波导,液晶和掺镧锆钛酸铅(PLZT)电光陶瓷)光学相控阵技术的基本构想和涉及的关键技术;着重介绍近年来基于PLZT电光陶瓷材料光学相控阵技术的发展情况以及在这方面的最新研究成果,包括单级相控阵、级联相控阵、不同电极结构(表面电极和上下电极结构)相控阵技术等;最后简要介绍了光学相控阵技术在激光雷达等军事领域中的应用。

Tm:Y_2SiO_5晶体的生长和光谱性质研究

采用中频感应提拉法生长了高质量的Tm:Y2SiO5(Tm:YSO)晶体,测定了晶体的晶格常数和分凝系数.运用劳厄照相法确定了单斜晶系Tm:YSO晶体的三个偏振轴〈010〉,D1和D2,在室温下测量了三个偏振轴方向的吸收光谱、荧光光谱和荧光寿命,计算了晶体吸收峰的吸收线宽和吸收截面.研究发现,相对于其他两个偏振轴方向,D1方向在790 nm处出现较强的吸收峰,同时在2μm附近出现了一定强度的发射峰,D1方向的吸收截面较大,荧光寿命较长.Tm:YSO晶体适用于AlGaAs二极管抽运固体激光器,在2μm波段固体激光器的应用上将有很大的发展潜力.

Ballistic Single-Electron Quputer

We propose a new solid state implementation of a quantum computer (quputer) using ballistic single electrons as flying qubits in 1D nanowires. We use a single electron pump (SEP) to prepare the initial state and a single electron transistor (SET) to measure the final state. Single qubit gates are implemented using quantum dots as phase shifters and electron waveguide couplers as beam splitters. A Coulomb coupler acts as a 2-qubit gate, using a mutual phase modulation effect. Since the electron phase coherence length in GaAs/AlGaAs heterostructures is of the order of 30$\mu$m, several gates (tens) can be implemented before the system decoheres.

High-power and picosecond pulse generation from a passively Q-switched tapered InGaAs/GaAs laser

Tapered waveguides have been used for enhancing pulse powers in Q-switched AlGaAs and InGaAsP lasers. This paper reports on passively Q-switched pulses with 1.53 W peak power and 41-ps FWHM from an InGaAs/GasAs (970 nm) double-contact tapered semiconductor laser in a well defined single-lobed far-field.

Single-photon detection using a quantum dot field effect transistor

A novel device for detection of single photons based on a GaAs/AlGaAs modulation doped field effect transistor (MODFET) which does not rely on avalanche processes is proposed. The optimal channel electron densities and quantum dot parameters for detection of single photons are discussed.

Ultrashort superradiant pulse generation from a GaN/InGaN heterostructure.

Dicke superradiance from a two-section violet GaN/InGaN semiconductor laser diode is demonstrated for the first time. In the superradiance regime, optical pulses with peak powers in excess of 2.8 W and durations as short as 1.4 ps are generated at repetition rates of up to 10 MHz at the emission wavelength of 408 nm. The properties of superradiant pulse generation from these GaN/InGaN laser diodes are very similar to those reported for infrared AlGaAs/GaAs laser diodes.