Temperature behaviour of the orange and blue emissions in ZnS : Mn nanoparticles

The temperature dependences of the orange and blue emissions in 10, 4.5, and 3 nm ZnS:Mn nanoparticles were investigated. The orange emission is from the T-4(1)-(6)A(1) transition of Mn2+ ions and the blue emission is related to the donor-acceptor recombination in the ZnS host. With increasing temperature, the blue emission has a red-shift. On the other hand, the peak energy of the orange emission is only weakly dependent on temperature. The luminescence intensity of the orange emission decreases rapidly from 110 to 300 K for the 10 nm sample but increases obviously for the 3 nm sample, whereas the emission intensity is nearly, independent of temperature for the 4.5 nm sample. A thermally activated carrier-transfer model has been proposed to explain the observed abnormal temperature behaviour of the orange emission in ZnS:Mn nanoparticles.

High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition

We report on the material growth and fabrication of high-performance 980-nm strained quantum-well lasers employing a hybrid material system consisting of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers. The use of AlGaAs cladding instead of InGaP provides potential advantages in flexibility of laser design, simple epitaxial growth, and improvement of surface morphology and laser performance. The as-grown InGaAs-InGaAsP(1.6 eV)-AlGaAs(1.95 eV) lasers achieve a low threshold current density of 150 A/cm(2) (at a cavity length of 1500 mu m), internal quantum efficiency of similar to 95%, and low internal loss of 1.8 cm(-1). Both broad-area and ridge-waveguide laser devices are fabricated. For 100-mu m-wide stripe lasers with a cavity length of 800 Irm, a slope efficiency of 1.05 W/A and a characteristic temperature coefficient (T-0) of 230 K are achieved. The lifetime test demonstrates a reliable performance. The comparison with our fabricated InGaAs-InGaAsP(1.6 eV)-AlGaAs(1.87 eV) lasers and Al-free InGaAs-InGaAsP (1.6 eV)-InGaP lasers are also given and discussed. The selective etching between AlGaAs and InGaAsP is successfully used for the formation of a ridge-waveguide structure. For 4-mu m-wide ridge-waveguide laser devices, a maximum output power of 350 mW is achieved. The fundamental mode output power can be up to 190 mW with a slope efficiency as high as 0.94 W/A.

带赋值符号迁移图的局部优化算法

National Natural Science Foundation of China; Public Administration and Civil Service Bureau of Macau SAR; Companhia de Telecomunicacoes de Macau S.A.R.L.; Macau SAR Government Tourist Office

针对瞬时故障的控制流容错技术研究

随着微电子器件复杂度的提高，空间辐射对于计算机程序的正确性影响正越来越明显。一般情况下，这些影响并不是永久的，而是瞬时故障。无论是太空中的信息处理系统、嵌入式实时控制系统，还是计算机集群、高性能超级计算机都可能由于错误的输出而导致灾难性的后果。 传统的可靠性系统采用抗辐射部件和冗余的硬件来达到可靠性的要求，但是其价格昂贵，性能落后于今天的商用部件（COTS）。针对COTS在容错能力上存在的不足，软件容错技术可以在不改变硬件结构的情况下，有效的提高计算机系统的可靠性。 瞬时故障在软件层面上主要表现为控制流错误和数据流错误，本文主要针对控制流错误进行容错处理。软件实现的控制流容错技术通过在编译时加入冗余的容错逻辑，在程序执行时进行控制流错误的检测和处理。 如何在保证容错能力的同时，尽量降低冗余逻辑所带来的系统开销，是控制流容错需要解决的主要问题。本文从控制流错误的基本概念，容错单元的选择，签名信息的建立，签名点和检测点的插入位置几个角度对控制流容错进行研究，主要内容有： 1．对常见的控制流容错方法进行了分析比较，对其优点和不足予以说明。 2．对控制流错误进行了分类，以此为基础，提出了基于相关前驱基本块的控制流容错方法（CFCLRB）。 3．提出了一种签名流模型，提出了基于签名流模型的控制流容错方法（CFCSF）。该方法能够对基本块间控制流错误进行检测，具有较低的时间开销、空间开销和较高的错误覆盖率。同时，该方法可以根据容错尺度的要求，灵活的插入和删除签名点与检测点，具有极强的扩展性。该方法还可以应对动态函数指针这种编译时难以确定的控制流情况。 4．基于汇编指令对上述方法予以实现，并实现了国际上常用的控制流容错方法Control Flow Checking by Software Signatures（CFCSS）和Control-flow Error Detection through Assertions（CEDA）做为对比。通过加入冗余的指令逻辑，完成了对原程序的容错功能。 5．基于PIN工具实现了对控制流错误的注入，在相同的实验环境下对CFCLRB ，CFCSF，CFCSS，CEDA进行了对比实验。实验表明, CFCLRB的时间开销为26.9%，空间开销为27.6%，相比不具容错能力的原程序，其错误覆盖率从66.50%提升到97.32%。CFCSF的时间开销为14.7%，空间开销为22.1%，相比不具容错能力的原程序，其错误覆盖率从66.50%提升到96.79%。相比CFCSS，该方法的时间开销从37.2%下降到14.7%，空间开销从31.2%下降到22.1%，错误覆盖率从95.16%提升到96.79%。相比CEDA，该方法的时间开销从26.9%下降到14.7%，空间开销从27.1%下降到22.1%，错误覆盖率仅从97.39%下降到96.79%。 最后，本文对控制流容错的未来研究方向进行了展望。

Uniform mems chip temperatures in the nucleate boiling heat transfer region by selecting suitable, medium boiling number range

The not only lower but also uniform MEMS chip temperatures can he reached by selecting suitable boiling number range that ensures the nucleate boiling heat transfer. In this article, boiling heat transfer experiments in 10 silicon triangular microchannels with the hydraulic diameter of 55.4 mu m were performed using acetone as the working fluid, having the inlet liquid temperatures of 24-40 degrees C, mass fluxes of 96-360 kg/m(2)s, heat fluxes of 140-420 kW/m(2), and exit vapor mass qualities of 0.28-0.70. The above data range correspond to the boiling number from 1.574 x 10(-3) to 3.219 x 10(-3) and ensure the perfect nucleate boiling heat transfer region, providing a very uniform chip temperature distribution in both streamline and transverse directions. The boiling heat transfer coefficients determined by the infrared radiator image system were found to he dependent on the heat Axes only, not dependent on the mass Axes and the vapor mass qualities covering the above data range. The high-speed flow visualization shows that the periodic flow patterns take place inside the microchannel in the time scale of milliseconds, consisting of liquid refilling stage, bubble nucleation, growth and coalescence stage, and transient liquid film evaporation stage in a full cycle. The paired or triplet bubble nucleation sites can occur in the microchannel corners anywhere along the flow direction, accounting for the nucleate boiling heat transfer mode. The periodic boiling process is similar to a series of bubble nucleation, growth, and departure followed by the liquid refilling in a single cavity for the pool boiling situation. The chip temperature difference across the whole two-phase area is found to he small in a couple of degrees, providing a better thermal management scheme for the high heat flux electronic components. Chen's [11 widely accepted correlation for macrochannels and Bao et al.'s [21 correlation obtained in a copper capillary tube with the inside diameter of 1.95 mm using R11 and HCFC123 as working fluids can predict the present experimental data with accepted accuracy. Other correlations fail to predict the correct heat transfer coefficient trends. New heat transfer correlations are also recommended.

澜沧江姬鼠（Apodemus ilex）种群遗传结构及其生物地理分析

澜沧江姬鼠（Apodemus ilex）为小型啮齿类动物，长期以来常被认为是中华姬鼠（A. draco）或长尾姬鼠（A. orestes）的同物异名，但近年基于线粒体Cyt b 的研究证明，该类群与中华姬鼠的遗传距离达到了种间水平，并被认为是一个独立种。本文提取、扩增并测定了来自云南14个地区42个产地156个澜沧江姬鼠的Cyt b 全序列，并将GenBank中的3条澜沧江姬鼠的Cyt b 全序列纳入分析，选取福建武夷山与四川峨眉山的2个中华姬鼠样品的Cyt b 全序列，以及台湾姬鼠、大耳姬鼠、高山姬鼠Cyt b 全序列作为外群，利用贝叶斯法和最大似然法构建系统发育树，并使用Network分析，分子变异分析（AMOVA）分析、错配分析（Mismatch analysis）与Fu`Fs检验等方法，探讨了这些地区澜沧江姬鼠的种群遗传结构，种群动态及生物地理格局。结果表明：云南地区过去被鉴定为中华姬鼠的样品均属于澜沧江姬鼠，澜沧江姬鼠与中华姬鼠间的遗传距离（K2P-ds+v）达到0.091，显著超过姬鼠属内种间差距（0.080），支持澜沧江姬鼠独立种的地位；该种不同地理种群可大致以澜沧江为界分为两大支系，且每个支系又各分为两个亚支系；进一步的AMOVA分析表明遗传变异主要来源于两大支系之间，而错配分析与Fu`Fs检验表明澜沧江姬鼠各地理种群及其两个支系都经历过多次扩张事件，这可能是和冰期与间冰期的轮回交替有关；分子系统树和中介网络图表明地理环境的隔离对于澜沧江姬鼠种群分化存在明显影响，其中澜沧江的阻隔作用最为显著。基于松散分子钟（Relax molecular clock）分析，中华姬鼠和澜沧江姬鼠的分歧时间大约在2.98 Ma（95％HPD: 4.32-1.88），而澜沧江姬鼠则在1.13 Ma（95％HPD: 1.95-0.65）分成两个支系。按照平均分歧时间来看，澜沧江姬鼠两个支系的的分歧事件发生在鄱阳冰期（1.2-0.9 Ma），两个支系内部进一步分化为两支的时间非常接近，分别为：Clade 1中为0.67 Ma （95％HPD: 1.17-0.34）和Clade 2 中为0.64 Ma (95％HPD: 1.17-0.36)，这种隔离种群各自产生分化的时间却非常接近，这提示其分化事件可能是受到古气候如冰期或间冰期的影响所产生。

MEV PROTON ELASTIC BACKSCATTERING ANALYSIS OF SILICON-NITRIDE AND OXIDE LAYERS ON SILICON

A simple method for the analysis of concentration ratios N/Si and O/Si in silicon nitride and oxide layers on silicon substrate is presented. 1.95-MeV proton elastic backscattering was used to determine the composition and density. A comparison with 2.1-MeV helium Rutherford backscattering measurements is given. Results are in good agreement with each other. The method is especially useful to analyze samples of 20 000 angstrom or thicker layers. We conclude that these two techniques are complementary for the measurements of samples with different thickness. A brief discussion has been given on results.

AlGaN基UV—LED的研究与进展

近年来短波长紫外LED巨大的应用价值引起了人们的高度关注，成为了全球半导体领域研究和投资的新热点。本文综合分析了AlGaN材料的生长、碎裂、掺杂和欧姆接触等问题，对UV—LED的发展历程、技术路线和研究进展进行了详细介绍，并展望了未来发展方向。

Si(100)衬底上n-3C-SiC／p-Si异质结构研究

利用LPCVD方法在Si(100)衬底上获得了3C-SiC外延膜，扫描电子显微镜(SEM)研究表明3C-SiC／p—Si界面平整、光滑，无明显的坑洞形成。研究了以In和Al为接触电极的3C-SiC／p—Si异质结的I—V，C-V特性及I—V特性的温度依赖关系，比较了In电极的3C-SiC／p—Si异质结构和以SiGe作为缓冲层的3C-SiC／SiGe／p—Si异质结构的I—V特性，实验发现引入SiGe缓冲层后，器件的反向击穿电压由40V提高到70V以上。室温下A1电极3C-SiC／p—Si二极管的最大反向击穿电压接近100V，品质因子为1．95。

木霉的种间融合重组及生物学特性研究

本文利用原生质体融合技术，以四株营养缺陷型突变株（康宁木霉UV2－1、UV2－15、绿色木霉UV2－11和另一木霉菌株UV2－2）为亲本进行种间融合重组。研究了原生质体形成和再生的最适条件及高产的重组菌株筛选的方法。筛选到了一株优良的融合株F1－18，它固体发酵稻草粉产生的滤纸酶活（FPA）、Cx酶活、Cl酶活和β－葡萄糖苷酶活分别为1148、5705、6042和1036 U/g基质，分别是其双亲－康宁木霉F224和绿色木霉F264－的1.86、1.38、1.95、1.52倍和9.10、6.78、4.79、0.85倍。对F1－18的生物学特性进行了研究。经菌落形态观察、分生孢子大小及其DNA含量测定，认定它为单倍性重组体。经非特异性酯酶和过氧化物酶同工酶酶谱分析及纤维素酶SDS－PAGE电泳图谱分析表明，它既有与双亲共有的谱带，也有它独有的谱带，说明在融合－分离过程中，发生了基因重组和基因突变，产生了新的蛋白组分。与生产用菌SN9706相比，F1－18固体发稻草粉产生的滤纸酶活提高了39％，β－葡萄糖苷酶活提高了86％。在固体发酵玉米秸粉时也获得较高的纤维素酶产量，具有广泛的应用前景和推广价值。F1－18的最适产酶条件为：培养基起始PH值为5.5 ～ 6.0，培养基中加2.5 ～ 3倍于原料的水，28 ～ 30 ℃发酵4天，培养基中添加0.35%脲和0.35% KNO3，最高酶产量可达滤纸酶活1347 U/g基质。