666 resultados para molten castings


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A novel Vb(3+)-Er-(3+) codoped phosphate glass for high power flashlamp pumping and high repetition rate laser at 1.54 mu m, designated EAT5-2, is developed. The weight-loss rate of is 1.3 x 10(-5) gcm(-2) h(-1) in boiling water, which is comparable to Kigre's QX-Er glass. Some spectroscopic parameters are analysed by Judd-Ofelt theory and McCumber theory The emission cross section is calculated to be 0.73 x 10(-20) cm(2). The thermo-mechanical properties of EAT5-2 are modified after an ion-exchange chemical strengthening process in a KNO3/NaNO3 molten salt bath. The thresholds for optical damage from the flashlamp pumping are tested on glass rods. A repetition rate of 15 Hz is achieved for chemically strengthened glass. The laser experimental results at. 1.54 mu m from flashlamp pumping are also reported.

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A new Er(3+)/Yb(3+) co-doped phosphate glass has been prepared, which exhibits good chemical durability and spectralproperties. Planar graded index waveguides have been fabricated in the glass by (Ag+)-Na(+) ion exchange in a mixed melt of silver nitrate and potassium nitrate. Ion exchange is carried out by varying the process parameters such as temperature, diffusion time, and molten salt compositions. The diffusion parameters, diffusion coefficients, and activation energy are determined by the guidelines of fabricated waveguides, which are determined by the input prism coupling technique.

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通过优化熔融条件和玻璃组份,成功开发出一种新的Er^3+/Yb^3+共掺磷酸盐玻璃,其在沸水和熔盐中均表现出很好的化学稳定性。通过分析室温下Er^3+/Yb^3+共掺磷酸盐玻璃的吸收光谱,计算得到了Er^3+离子在波长1533nm处的峰值发射截面和杜得-奥菲而特强度参数;其中Er^3+离子在波长1533nm处的峰值发射截面为0.72×10^20cm^2,大于Schott的IOG1玻璃中Er^3+离子的峰值发射截面0.67×10^-20cm^2。通过改变离子交换的条件,获得了1.55μm单模光波导的制作条件

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A Baía da Ilha Guaíba é um sistema costeiro tropical com influência de águas oceânicas, principalmente da Corrente do Brasil e das Águas Costeiras que são predominantes em toda a costa da região sudeste. O objetivo geral foi identificar os indicadores biológicos das possíveis alterações ambientais e ou antrópicas e como objetivos específicos, apresentar a distribuição qualitativa e quantitativa do fitoplâncton em função da espacialidade e da sazonalidade em duas situações de maré bem como demonstrar a estrutura da comunidade fitoplanctônica dentro de um Programa de Monitoramento desenvolvido pela empresa Minerações Brasileiras Reunidas através do Centro de Tecnologia Ambiental da FIRJAN (CTA). Foram estabelecidos 9 pontos amostrais na área sob influência do Terminal Marítimo da Ilha levando em consideração as características de cada um. Para o estudo qualitativo e quantitativo do fitoplâncton, 200 ml de água foram coletados em dois pontos de amostragem 7 e 9 em baixa-mar e preamar, através de garrafa de Van Dorn e nos 9 pontos foi realizado arrasto com rede de 50μm, ambos em quatro épocas sazonais distintas. Ao todo foram encontradas 176 unidades taxonômicas demonstrando uma importante oferta de nichos. A espécie que mais se destacou foi Coscinodiscus cf. centralis em todas as amostras de rede. A sazonalidade foi vista através de uma análise de Cluster tanto para as amostras de rede quanto para as de garrafa. Não houve registro de espécies que indicassem alterações antrópicas não revelando condição de eutrofização. Foram encontradas espécies indicadoras de diferentes massas de água como também outras potencialmente nocivas. Os resultados bióticos e abióticos demonstraram que a área sob influência do empreendimento está dentro dos padrões estabelecidos pela legislação vigente e que para o estabelecimento de um desenvolvimento sustentável torna-se imprescindível a adoção de métodos padronizados e multiinterdisciplinares para que seja possível comparar e acompanhar os processos e seus efeitos viabilizando assim a manutenção da biodiversidade.

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Seeded zone-melt recrystallization using a dual electron beam system has been performed on silicon-on-insulator material, which was prepared with single-crystal silicon filling of the seed windows by selective epitaxial growth. The crystal quality has been assessed by a variety of microscopic techniques, and it is shown that single-crystal films 0.5-1.0 μm thick over 1.0 μm of isolating oxide may be prepared by this method. These films have considerably less lateral variation in thickness than standard material, in which the windows are not so filled. The filling method is suitable for both single- and multiple-layer silicon-on-insulator, and gives the advantages of excellent layer uniformity after recrystallization and improved planarity of the whole chip structure. Experiments using various amounts of seed window filling have shown that the lateral variations of silicon film thickness seen in unplanarized material are due to stress relief in the cap oxide when the silicon film is molten, rather than the effect previously postulated in which they were assumed to be due to the contraction of silicon on melting.

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The effect of KI encapsulation in narrow (HiPCO) single-walled carbon nanotubes is studied via Raman spectroscopy and optical absorption. The analysis of the data explores the interplay between strain and structural modifications, bond-length changes, charge transfer, and electronic density of states. KI encapsulation appears to be consistent with both charge transfer and strain that shrink both the C-C bonds and the overall nanotube along the axial direction. The charge transfer in larger semiconducting nanotubes is low and comparable with some cases of electrochemical doping, while optical transitions between pairs of singularities of the density of states are quenched for narrow metallic nanotubes. Stronger changes in the density of states occur in some energy ranges and are attributed to polarization van der Waals interactions caused by the ionic encapsulate. Unlike doping with other species, such as atoms and small molecules, encapsulation of inorganic compounds via the molten-phase route provides stable effects due to maximal occupation of the nanotube inner space.

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The dramatic increase in hole quality on single crystalline silicon with an 1 μm fiber laser has been reported recently, it redefines the processing options for Si at that wavelength. This study investigated the effects of the MOPA based pulse tuning on the changes of the machined depth and the mass removal mechanism for the generation of microvia holes. Hole depths were measured and surface morphology studied using SEM and optical interferometric profilometry. The pulse peak power was found to strongly influence the material removal mechanism with fixed pulse duration. High peak powers (>1 kW) gave vaporization dominated ablation, left a limited re solidified molten layer and clean hole formation. The pulse duration was found to strongly influence the machined depth. Longer pulse durations generated deeper holes with constant peak power (>1 kW). In comparison with the DPSS UV laser, the IR fiber laser of longer pulse durations machined deeper holes and generated less resolidifed melt beyond the hole rim at high fluencies. The comparison suggests that some applications (microvia drilling) of the DPSS UV laser can be replaced with the more flexible, low cost IR fiber laser. © KSPE and Springer 2012.

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In this work, we performed an evaluation of decay heat power of advanced, fast spectrum, lead and molten salt-cooled reactors, with flexible conversion ratio. The decay heat power was calculated using the BGCore computer code, which explicitly tracks over 1700 isotopes in the fuel throughout its burnup and subsequent decay. In the first stage, the capability of the BGCore code to accurately predict the decay heat power was verified by performing a benchmark calculation for a typical UO2 fuel in a Pressurized Water Reactor environment against the (ANSI/ANS-5.1-2005, "Decay Heat Power in Light Water Reactors," American National Standard) standard. Very good agreement (within 5%) between the two methods was obtained. Once BGCore calculation capabilities were verified, we calculated decay power for fast reactors with different coolants and conversion ratios, for which no standard procedure is currently available. Notable differences were observed for the decay power of the advanced reactor as compared with the conventional UO2 LWR. The importance of the observed differences was demonstrated by performing a simulation of a Station Blackout transient with the RELAP5 computer code for a lead-cooled fast reactor. The simulation was performed twice: using the code-default ANS-79 decay heat curve and using the curve calculated specifically for the studied core by BGCore code. The differences in the decay heat power resulted in failure to meet maximum cladding temperature limit criteria by ∼100 °C in the latter case, while in the transient simulation with the ANS-79 decay heat curve, all safety limits were satisfied. The results of this study show that the design of new reactor safety systems must be based on decay power curves specific to each individual case in order to assure the desired performance of these systems. © 2009 Elsevier B.V. All rights reserved.

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The potential for thorium as an alternative or supplement to uranium in fission power generation has long been recognised, and several reactors, of various types, have already operated using thorium-based fuels. Accelerator Driven Subcritical (ADS) systems have benefits and drawbacks when compared to conventional critical thorium reactors, for both solid and molten salt fuels. None of the four options - liquid or solid, with or without an accelerator - can yet be rated as better or worse than the other three, given today's knowledge. We outline the research that will be necessary to lead to an informed choice. Copyright © 2012 by IEEE.

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Composite AlN powder, mixed with the sintering additive Y2O3, was synthesized by the direct nitridation of molten Al-Mg-Y alloys. The character of products was determined by means of electron microscopy, X-ray diffraction, granularmetric analysis and chemical composition analysis etc. The results show that the nitridation rate of the raw alloys is higher, and the nitridation products axe porous enough to be easily crushed. Composite AlN powder, obtained by the Lanxide method, has excellent characters such as high purity, especially low oxygen content, and narrow well-distributed grain size and so on.

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GaN nanotip triangle pyramids were synthesized on 3C-SiC epilayer via an isoelectronic In-doping technique. The synthesis was carried out in a specially designed two-hot-boat chemical vapor deposition system. In (99.999%) and molten Ga (99.99%) with a mass ratio of about 1:4 were used as the source, and pieces of Si (111) wafer covered with 400-500 nm 3C-SiC epilayer were used as the substrates. The products were analyzed by x-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, selected area electron diffraction, Raman spectroscopy, and photoluminescence measurements. Our results show that the as-synthesized GaN pyramids are perfect single crystal with wurtzite structure, which may have potential applications in electronic/photonic devices.

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AIN powders were prepared by in-situ synthesis technique. It is a reaction of binary molten Al-Mg alloys with highly pure nitrogen. It was confirmed through thermodynamics calculation that Mg element in Al-Mg alloys can decrease oxygen content in the reacting system. Thus, nitridation reaction can be performed to form AIN. Moreover, an analysis of kinetics shows that the nitridation reaction of Al-Mg alloys can be accelerated and transferred rapidly with the increment of Mg content.

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The structural properties of Semi-insulating gallium arsenide (SI-GaAs) crystal grown with power-travelling technique in space have been studied by double-crystal x-ray diffractometry and chemical etching. The quality of the crystal was first evaluated by x-ray rocking-curve method. The full width at half maximum of x-ray rocking curve in space-grown SI-GaAs is 9.4+/-0.08 are seconds. The average density of dislocations revealed by molten KOH is 2.0 X 10(4) cm(-2), and the highest density is 3.1 X 10(4) cm(-2). The stoichiometry in the single crystal grown in space is improved as well. Unfortunately, the rear of the ingot grown in space is polycrystalline owing to being out of control of power. (C) 1999 COSPAR. Published by Elsevier Science Ltd.

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A semi-insulating (SI) GaAs single crystal was recently grown in a retrievable satellite. The average etch pit density (EPD) of dislocations in the crystal revealed by molten KOH is 2.0 x 10(4) cm(-2), and the highest EPD is 3.1 x 10(4) cm(-2) This result indicates a quite good homogenity of the EPD which is much better than the ground-grown crystals. A similar better homogenity of the stoichiometry i.e., the [As]/([As] + [Ga]) ratio has been found in the space-grown SI-GaAs single crystal studied nondestructively using a new mapping method based upon X-ray Bond diffraction. The average stoichiometry in the space-grown crystal is 0.50007 with mean-square deviation of 6x10(-6), while the average stoichiometry in ground-grown SI-GaAs crystal is more than 0.50010. (C) 1998 Elsevier Science B.V. All rights reserved.

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In a slagging combustor or furnace, the high combustion temperature makes the molten slag layer cover the wall and capture the particles. If these particles contain combustible matter, they will continue to burn on the running slag. As a result, the total amount of ash deposition will be much greater than that in dry-wall combustors and the total heat flux through the deposition surface will change greatly. Considering the limitations of existing simulation methods for slagging combustion, this paper introduces a new wall burning model and slag flow model from the analysis; of particle deposition phenomena. Combined with a conventional combustion simulation program, the total computational frame is introduced. From comparisons of simulation results from several kinds of methods with experimental data, the conclusion is drawn that the conventional simulation methods are not very suitable for slagging combustion and the wall burning mechanism should be considered more thoroughly.