Self-assembled InAs quantum wires on InP(001)

Self-assembled InAs quantum wires (QWRs) embedded in In0.52Al0.48As, In0.53Ga0.47As, and (In0.52Al0.48As)(n)/(In0.53Ga0.47As)(m)-short-period-lattice matrices on InP(001) were fabricated with molecular beam epitaxy (MBE). These QWR lines are along [110], x 4 direction in the 2 x 4 reconstructed (001) surface as revealed with reflection high-energy electron diffraction (RHEED). Alignment of quantum wires in different layers in the InAs/spacer multilayer structures depends on the composition of spacer layers. (C) 2000 Elsevier Science B.V. All rights reserved.

Influence of InxGa1-xAs (0 <= x <= 0.3) cap layer on structural and optical properties of self-assembled InAs/GaAs quantum dots

Optical and structural properties of self-organized InAs/GaAs quantum dots (QDs) with InxGa1-xAs or GaAs cover layers grown by molecular beam epitaxy (MBE) have been characterized by transmission electron microscopy (TEM), atomic force microscopy (AFM) and photoluminescence (PL) measurements. The TEM and AFM images show that the surface stress of the InAs QDs was suppressed by overgrowth of a InxGa1-xAs covering layer on the top of the QDs and the uniformity of the QDs preserved. PL measurements reveal that red shifts of the PL emission due to the reduction of the surface strain of the InAs islands was observed and the temperature sensitivity of the PL emission energy was suppressed by overgrowth of InxGa1-xAs layers compared to that by overgrowth of GaAs layers.

Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates

The effects of InP substrate orientations on self-assembled InAs quantum dots (QDs) have been investigated by molecular beam epitaxy (MBE). A comparison between atomic force microscopy (AFM) and photoluminescence (PL) spectra shows that a high density of smaller InAs islands can be obtained by using such high index substrates. On the other hand, by introducing a lattice-matched underlying In0.52Al0.24Ga0.24As layer, the InAs QDs can be much more uniform in size and have a great improvement in PL properties. More importantly, 1.55-mu m luminescence at room temperature (RT) can be realized in InAs QDs deposited on (001) InP substrate with underlying In0.52Al0.24Ga0.24As layer. (C) 2000 Elsevier Science B.V. All rights reserved.

Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates

In this paper, we investigated the self-assembled quantum dots formed on (100) and (N11)B (N = 2, 3, 4, 5) InP substrates by molecular beam epitaxy (MBE). Two kinds of ternary QDs (In0.9Ga0.1As and In0.9Al0.1As QDs) are grown on the above substrates; Transmission electron microscopy (TEM) and photoluminescence (PL) results confirm QDs formation for all samples. The PL spectra reveal obvious differences in integral luminescence, peak position, full-width at half-maximum and peak shape between different oriented surfaces. Highest PL integral intensity is observed from QDs on (411)B surfaces, which shows a potential for improving the optical properties of QDs by using high-index surface. (C) 2000 Elsevier Science B.V. All rights reserved.

Hydrogen-dependent lattice dilation in GaN

Using Raman spectroscopy we have analysed the strain status of GaN films grown on sapphire substrates by NH3 source molecular beam epitaxy (MBE). In addition to the expected compressive biaxial strain, in some cases GaN films grown on c-face sapphire substrates suffer from serious tensile biaxial strain. This anomalous behaviour has been well interpreted in terms of interstitial hydrogen-dependent lattice dilation. The hydrogen concentration in the films is measured by nuclear reaction analysis (NRA). With increasing hydrogen incorporation, the residual compressive biaxial strain is first further relaxed, and then turns into tensile strain when the hydrogen contaminant exceeds a critical concentration. The hydrogen incorporation during the growth process is found to be growth-rate dependent, and is supposed to be strain driven. We believe that the strain-induced interstitial incorporation is another way for strain relaxation during heteroepitaxy, besides the two currently well known mechanisms: formation of dislocations and growth front roughening.

Epitaxial growth of GaNAs/GaAs heterostructure materials

A series of systematic experiments on the growth of high quality GaNAs strained layers on GaAs (001) substrate have been carried out by using DC active Nz plasma, assisted molecular beam epitaxy. The samples of GaNAs between 3 and 200 nm thick were evaluated by double crystal X-ray diffraction (XRD) and photoluminescence (PL) measurements. PL and XRD measurements for these samples are in good agreement. Some material growth and structure parameters affecting the properties of GaNAs/GaAs heterostructure were studied; they were: (1) growth temperature of GaNAs epilayer; (2) electrical current of active N-2 plasma; (3) Nz flow rate; (4) GaNAs growth rate; (5) the thickness of GaNAs strained layer. XRD and PL measurements showed that superlattice with distinct satellite peaks up to two orders and quantum well structure with intensity at 22 meV Fourier transform infrared spectroscopy (FWHM) can be achieved in molecular beam epitaxy (MBE) system. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Infrared absorption efficiency in AlAs/AlxGa1-xAs type-II multiple-quantum-well structure grown on (211) GaAs substrate

We have made a normal incidence high infrared absorption efficiency AlAs/Al0.55Ga0.45As multiple-quantum-well structure grown on (211) GaAs substrates by molecular beam epitaxy (MBE). A strong infrared absorption signal at 11.6 mu m due to the transition of the ground state to the first excited state, and a small signal at 6.8 mu m due to the transition from the ground state to continuum. were observed. A 45 degrees tilted incidence measurement was also performed on the same sample for the comparison with a normal incidence measurement. Both measurements provide important information about the quantum well absorption efficiency. Efficiencies which evaluate the absorption of electric components perpendicular and parallel to the well plane are eta(perpendicular to) = 25% and eta(parallel to) = 88%, respectively. The total efficiency is then deduced to be eta = 91%. It is apparent that the efficiency eta(parallel to) dominates the total quantum efficiency eta Because an electron in the (211) AlAs well has a small effective mass (m(zx)* or m(zy)*), the normal incidence absorption coefficient is expected to be higher:than that grown on (511) and (311) substrates. Thus, in the present study, we use the (211) substrate to fabricate QWIP. The experimental results indicate the potential of these novel structures for use as normal incidence infrared photodetectors.

Two-dimensional ordering of self-assembled InxGal-xAs quantum dots grown on GaAs(311)B surfaces

Two-dimensional (2D) ordering of self-assembled InxGa1-xAs quantum dots (QDs) fabricated on GaAs(311)B surface by molecular beam epitaxy (MBE) are reported. The QDs are aligned into rows deferring from the direction of the misorientation of the substrate, and strongly dependent on the mole In content x of InxGa1-xAs solid solution. The ordering alignment deteriorates significantly as the In content is increased to above 0.5. The 2D ordering can be described as a centered rectangular unit mesh with the two sides parallel to [01 (1) over bar] and [(2) over bar 33], respectively. Their relative arrangement seems to be determined by a combination of the strongly repulsive elastic interaction between neighbouring islands and the minimization of the strain energy of the whole system. The ordering also helps to improve the size homogeneity of the InGaAs islands. Photoluminescence (PL) result demonstrates that QDs grown on (311)B have the narrowest linewidth and the strongest integrated intensity, compared to those grown on (100) and other high-index planes under the same condition. (C) 1999 Elsevier Science B.V. All rights reserved.

Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(311)B surfaces

The two-dimensional (2D) ordering of self-assembled InxGa1-xAs quantum dots (QDs) fabricated on GaAs(3 1 1)B surface by molecular beam epitaxy (MBE) are reported. The QDs are aligned into rows differing from the direction of the misorientation of the substrate, and strongly dependent on the mole In content x of InxGa1-As-x solid solution. The ordering alignment deteriorates significantly as the In content is increased to above 0.5. The 2D ordering can be described as a centered rectangular unit mesh with the two sides parallel to [0 1 (1) over bar] and [(2) over bar 3 3], respectively. Their relative arrangement seems to be determined by a combination of the strongly repulsive elastic interaction between the neighboring islands and the minimization of the strain energy of the whole system. The ordering also helps to improve the size homogeneity of the InGaAs islands. The photoluminescence (PL) result demonstrates that QDs grown on (3 1 1)B have the narrowest linewidth and the strongest integrated intensity, compared to those on (1 0 0) and other high-index planes under the same condition. (C) 1999 Elsevier Science B.V. All rights reserved.

Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)

Red-emission at similar to 640 nm from self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on GaAs substrate by molecular beam epitaxy (MBE) has been demonstrated. We obtained a double-peak structure of photoluminescence (PL) spectra from quantum dots. An atomic force micrograph (AFM) image for uncapped sample also shows a bimodal distribution of dot sizes. From the temperature and excitation intensity dependence of PL spectra, we found that the double-peak structure of PL spectra from quantum dots was strongly correlated to the two predominant quantum dot families. Taking into account quantum-size effect on the peak energy, we propose that the high (low) energy peak results from a smaller (larger) dot family, and this result is identical with the statistical distribution of dot lateral size from the AFM image.

Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates

Structural and optical investigations of InAs QDs grown on GaAs (3 1 1)A by molecular beam epitaxy (MBE) were reported. InAs/GaAs (3 1 1)A QDs with nonconventional, faceted, arrowhead-like shapes aligned in the [ - 2 3 3] direction have been disclosed by AFM image. Low defect and dislocation density on the QDs interfaces were indicated by the linear dependence of photoluminescence (PL) intensity on the excitation power. The fast red shift of PL energy and the monotonic decrease of FWHM with increasing temperature were observed and explained by carriers being thermally activated to the energy barrier produced by the wetting layer and then retrapped and recombined in energetically low-lying QDs states. (C) 1999 Elsevier Science B.V. All rights reserved.

Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures

InGaAs/GaAs quantum dots (QDs) superlattice grown by molecular beam epitaxy (MBE) at different substrate temperatures for fabricating 8-12 mu m infrared photodetector were characterized by transmission electron microscopy (TEM), double-crystal X-ray diffraction (DCXRD) and photoluminescence (PL). High-quality QDs superlattice can be achieved by higher growth temperature. Cross-sectional TEM shows the QDs in the successive layers are vertically aligned along growth direction. Interaction of partial vertically aligned columns leads to a perfect vertical ordering. With increasing number of bilayers, the average QDs size becomes larger in height and rapidly saturates at a certain value, while average lateral length nearly preserves initial size. This change leads to the formation of QDs homogeneous in size and of a particular shape. The observed self-organizations are attributed to the effect of strain distribution at QDs on the kinetic growth process. DCXRD measurement shows two sets of satellite peaks which corresponds to QDs superlattice and multi quantum wells formed by the wetting layers. Kinematical simulations of the wetting layers indicate that the formation of QDs is associated with a decrease of the effective indium content in the wetting layers. (C) 1999 Elsevier Science B.V. All rights reserved.

Substrate surface atomic structure influence on the growth of InAlAs quantum dots

We have examined the influence of substrate surface orientation on self-assembled InAlAs/AlGaAs quantum dots grown on (0 0 1) and (n 1 1) A/B (n = 3, 5) GaAs substrates by molecular beam epitaxy (MBE). Preliminary characterizations have been performed using photoluminescence (PL) and transmission electron microscopy (TEM). The PL emission energies of quantum dots on high Miller index surface are found to be strongly dependent on the atomic-terminated surface (A or B surface) of the substrate. We observed that there were planar ordering larger islands on (3 1 1)B surface compared to (0 0 1) surface, in contrast, a rough interface and smaller "grains" on (3 1 1)A surface, this result is identical with PL emission energy from these islands. We propose that the rapid strain-induced surface "roughening" impedes the formation of 3D islands on A surface, and indicating that this is a promising approach of the realization of ordering distribution on (3 1 1)B plane for devices such as red-emitting semiconductor quantum dots lasers. (C) 1999 Elsevier Science B.V. All rights reserved.

In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates

Self-assembled InxGa1-xAs quantum dots (QDs) on (311)A/B GaAs surfaces have been grown by molecular beam epitaxy (MBE). Spontaneously ordering alignment of InxGa1-xAs with lower In content around 0.3 have been observed. The direction of alignment orientation of the QDs formation differs from the direction of misorientation of the (311)B surface, and is strongly dependent upon the In content x. The ordering alignment become significantly deteriorated as the In content is increased to above 0.5 or as the QDs are formed on (100) or (311)A substrates. (C) 1999 Elsevier Science B.V. All rights reserved.

Growth and characterization of InGaAs/InAlAs/InP high-electron-mobility transistor structures towards high channel conductivity

High-quality InGaAs/InAlAs/InP high-electron-mobility transistor (HEMT) structures with lattice-matched or pseudomorphic channels have been grown by molecular-beam epitaxy (MBE). The purpose of this work is to enhance the channel conductivity by changing the epitaxial structure and growth process. With the use of pseudomorphic step quantum-well channel, the highest channel conductivity is achieved at x = 0.7, the corresponding electron mobilities are as high as 12300 (300 K) and 61000 cm(2)/V.s (77 K) with two-dimensional electron gas (2DEG) density of 3.3 x 10(12) cm(-2). These structures are comprehensively characterized by Hall measurements, photoluminescence, double crystal X-ray diffraction and transmission electron microscopy. Strong room-temperature luminescence is observed, demonstrating the high optical quality of the samples. We also show that decreasing the In composition in the InyAl1-yAs spacer is very effective to increase the 2DEG density of PHEMT structures. (C) 1998 Published by Elsevier Science B.V. All rights reserved.