Soft ferrite used as thermal-magnetic conversion intermedium in the flux pumping technology

Recent progress in material science has proved that high-temperature superconductors, such as bulk melt-processed yttrium barium copper oxide (YBCO) single domains, have a great potential to trap significant magnetic fields. In this paper, we will describe a novel method of YBCO magnetization that only requires the applied field to be at the level of a permanent magnet. Instead of applying a pulsed high magnetic field on the YBCO, a thermally actuated material (TAM), such as Mg0.15}hbox{Cu}0.15} hbox{Zn0.7 Ti0.04}Fe1.96boxO4, has been used as an intermedium to create a travelling magnetic field by changing the local temperature so that the local permeability is changed to build up the magnetization of the YBCO gradually after multiple pumping cycles. It is well known that the relative permeability of ferrite is a function of temperature and its electromagnetic properties can be greatly changed by adding dopants such as Mg or Ti; therefore, it is considered to be the most promising TAM for future flux pumping technology. Ferrite samples were fabricated by means of the conventional ceramic method with different dopants. Zinc and iron oxides were used as raw materials. The samples were sintered at 1100 C, 1200 C} , and 1300 C. The relative permeability of the samples was measured at temperatures ranging from 77 to 300 K. This work investigates the variation of the magnetic properties of ferrites with different heat treatments and doping elements and gives a smart insight into finding better ferrites suitable for flux pumping technology. © 2002-2011 IEEE.

Multiwall nanotubes, multilayers, and hybrid nanostructures: new frontiers for technology and Raman spectroscopy.

Technological progress is determined, to a great extent, by developments in material science. Breakthroughs can happen when a new type of material or new combinations of known materials with different dimensionality and functionality are created. Multilayered structures, being planar or concentric, are now emerging as major players at the forefront of research. Raman spectroscopy is a well-established characterization technique for carbon nanomaterials and is being developed for layered materials. In this issue of ACS Nano, Hirschmann et al. investigate triple-wall carbon nanotubes via resonant Raman spectroscopy, showing how a wealth of information can be derived about these complex structures. The next challenge is to tackle hybrid heterostructures, consisting of different planar or concentric materials, arranged "on demand" to achieve targeted properties.

Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing

Separation by implantation of oxygen and nitrogen (SIMON) silicon-on-insulator (SOI) materials were fabricated by sequential oxygen and nitrogen implantation with annealing after each implantation. Analyses of SIMS, XTEM and HRTEM were performed. The results show that superior buried insulating multi-layers were well formed and the possible mechanism is discussed. The remarkable total-dose irradiation tolerance of SIMON materials was confirmed by few shifts of drain leakage current-gate source voltage (I-V) curves of PMOS transistors fabricated on SIMON materials before and after irradiation.

Low power-consumption and high response frequency thermo-optic variable optical Attenuators based on silicon-on-insulator materials

A novel silicon-on-insulator thermo-optic variable optical attenuator with isolated grooves based on a multimode interference coupler principle is fabricated by the inductive coupled plasma etching technology. The maximum fibre-to-fibre insertion loss is lower than 2.2 dB, the dynamic attenuation range is from 0 to 30 dB in the wavelength range 1500-1600 nm, and the maximum power consumption is only 140 mW. The response frequency of the fabricated variable optical attenuator is about 30 kHz. Compared to the variable optical attenuator without isolated grooves, the maximum power consumption decreases more than 220 mW, and the response frequency rises are more than 20 kHz.

Nano-layer structure of silicon-on-insulator materials

Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.

Exploration on enhancing innovation capability of functional information materials in China

The present status and future prospects of functional information materials, mainly focusing on semiconductor microstructural materials, are introduced first in this paper. Then a brief discussion how to enhance the academic level and innovation capability of research and development of functional information materials in China are made. Finally the main problems concerning the studies of materials science and technology are analyzed, and possible measures for promoting its development are proposed.

Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy

The increased emphasis on sub-micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200 nm. It is demonstrated that the crystalline quality of as-grown thin SOS films by the CVD method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self-silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a greater improvement in silicon layer crystallinity and channel carrier mobility, evidenced, respectively, by double crystal X-ray diffraction and electrical measurements. We concluded that the thin SPE SOS films are suitable for application to high-performance CMOS circuitry. (C) 2000 Elsevier Science S.A. All rights reserved.

Direct Wafer Bonding Technology employing vacuum-cavity pre-bonding

A novel low temperature direct wafer bonding technology employing vacuum-cavity pre-bonding is proposed and applied in bonding of InGaAs/Si couple wafers under 300 degrees C and InP/GaAs couple wafers under 350 degrees C. Aligning accuracy of 0.5 mu m is achieved. During wafer bonding process the pressure on the couple wafers is 10MPa. The interface energy is sufficiently high to allow thinning of the wafers down from 350um to about 100um. And the tensile strength test indicates the bonding energy of bonded samples is about equal to the bonded samples at 550 degrees C.

Improved diphasic nc-si/a-si : H I-layer materials using PECVD

Two series of films has been prepared by using a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystalline state. The photoelectronic properties of the films have been investigated as a function of crystalline fraction. In comparison with typical a-Si:H, these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, higher mobility life-time product ( LT) and higher stability upon light soaking. By using the diphasic nc-Si/a-Si films as the intrinsic layer, a p-i-n junction solar cell has been prepared with an initial efficiency of 9. 10 % and a stabilized efficiency of 8.56 % (AM 1.5, 100 mW/cm(2)).

Novel biodiesel production technology from soybean soapstock

This paper describes an attractive method to make biodiesel from soybean soapstock (SS). A novel recovery technology of acid oil (AO) from SS has been developed with only sulfuric acid solution under the ambient temperature (25 +/- 2 degrees C). After drying, AO contained 50.0% FFA, 15.5% TAG 6.9% DAG 3.1% MAG 0.8% water and other inert materials. The recovery yield of AO was about 97% (w/w) based on the total fatty acids of the SS. The acid oil could be directly converted into biodiesel at 95 degrees C in a pressurized reactor within 5 hours. Optimal esterification conditions were determined to be a weight ratio of 1 : 1.5 : 0.1 of AO/methanol/sulfuric acid. Higher reaction temperature helps to shorten the reaction time and requires less catalyst and methanol. Ester content of the biodiesel derived from AO through one-step acid catalyzed reaction is around 92%. After distillation, the purity of the biodiesel produced from AO is 97.6% which meets the Biodiesel Specification of Korea. The yield of purified biodiesel was 94% (w/w) based on the total fatty acids of the soapstock.

Competitions of magnetism and superconductivity in FeAs-based materials

Using the numerical unrestricted Hartree-Fock approach, we study the ground state of a two-orbital model describing newly discovered FeAs-based superconductors. We observe the competition of a (0, π) mode spin-density wave and the superconductivity as the doping concentration changes. There might be a small region in the electron-doping side where the magnetism and superconductivity coexist. The superconducting pairing is found to be spin singlet,orbital even, and coexisting sxy + dx~2-y~2 wave (even parity).

Nano-layer structure of silicon-on-insulator materials

Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.

Exploration on enhancing innovation capability of functional information materials in China

The present status and future prospects of functional information materials, mainly focusing on semiconductor microstructural materials, are introduced first in this paper. Then a brief discussion how to enhance the academic level and innovation capability of research and development of functional information materials in China are made. Finally the main problems concerning the studies of materials science and technology are analyzed, and possible measures for promoting its development are proposed.

Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy

The increased emphasis on sub-micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200 nm. It is demonstrated that the crystalline quality of as-grown thin SOS films by the CVD method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self-silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a greater improvement in silicon layer crystallinity and channel carrier mobility, evidenced, respectively, by double crystal X-ray diffraction and electrical measurements. We concluded that the thin SPE SOS films are suitable for application to high-performance CMOS circuitry. (C) 2000 Elsevier Science S.A. All rights reserved.

Experimental Setup for Assessing the Energetic Materials Deflagration Propagation under High Temperature and High Pressure Conditions

The technology of "explosion in fractures" is one of new synthetic engineering methods used in low permeability reservoirs. The most important problem arose from the technology is to assess the deflagration propagation capability of milky explosives in rock fractures. In order to investigate detailed this problem in the laboratory, an experimental setup was designed and developed in which different conditions can be simulated. The experimental setup mainly includes two parts. One is the experimental part and the other is the measurement part. In the experimental setup, the narrow slots with different width can be simulated; meanwhile, different initial pressures and initial temperatures can be loaded on the explosives inside the narrow slots. The initial pressure range is from 0-60 MPa, and the initial temperatures range is from room temperature to 100 V. The temperature and the velocity of deflagration wave can be measured; meanwhile the corresponding pressure in the narrow slot is also measured. In the end, some typical measurement results are briefly presented and discussed.