A uniform 290 nm periodic square structure on ZnO fabricated by two-beam femtosecond laser ablation

A uniform submicron periodic square structure was fabricated on the surface of ZnO by a technique of two linearly polarized femtosecond laser beams with orthogonal polarizations ablating material alternately. The formed two-dimensional ordering submicron structure consists of close-packed submicron squares with a spacial periodicity of 290 nm, which arises from the intercrossing of two orthogonal submicron ripple structures induced by the two beams respectively. The result demonstrates a noninterference effect of two-beam ablation based on the alternate technique, which should come from the polarization-dependent enhancement of the subwavelength ripple structure and the large interval of two alternate pulses. This two-beam alternate ablation technique is expected to open up prospects for the submicron fabrication of wide-bandgap materials.

Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique

We report on the realization of ZnO homojunction light-emitting diodes (LEDs) fabricated by metalorganic chemical vapor deposition on (0001) ZnO bulk substrate. The p-type ZnO epilayer was formed by nitrogen incorporation using N2O gas as oxidizing and doping sources. Distinct electroluminescence (EL) emissions in the blue and yellow regions were observed at room temperature by the naked eye under forward bias. The EL peak energy coincided with the photoluminescence peak energy of the ZnO epilayer, suggesting that the EL emissions emerge from the ZnO epilayer. In addition, the current-voltage and light output-voltage characteristics of ZnO homojunction LEDs have also been studied. (c) 2006 American Institute of Physics.

退火对Si（111）衬底上ZnO薄膜的结构和发光特性的影响

采用磁控溅射法在硅（111）衬底上制备了C轴高度取向的ZnO薄膜，并研究了退火温度和氧气气氛对ZnO薄膜晶体质量、晶粒度大小和光致发光谱的影响。X射线衍射表明，所有薄膜均为高度C轴择优取向，当退火温度低于900℃时，随着退火温度的升高，薄膜的取向性和结晶度都明显提高。室温下对ZnO薄膜进行了光谱分析，退火后的样品均可观测到明显的紫光发射。在一定的退火温度范围内，还可以观测到明显的紫外双峰。空气中退火的样品，当退火温度达到或高于600℃还可观测到绿光发射。实验结果表明，发光峰强度随退火温度和氧气气氛不同而不

在钛酸锶衬底上外延生长ZnO薄膜及其性能研究

用脉冲激光淀积法（PLD）在（111）面SrTiO3衬底上外延生长ZnO单晶薄膜。样品分别在衬底温度为350℃、500℃、600℃下外延生长。X射线衍射（XRD）的结果表明,所得的ZnO单晶薄膜结晶性能好,只出现（002）和（004）两个衍射峰,（002）峰的半高宽度（FWHM）为0.23°。在荧光光谱中我们只观察到来源于带边激子跃迁的强UV发射,并且随着生长温度的升高,紫外峰的强度逐渐增强。样品的SEM图像表明所得ZnO薄膜表面平整,晶粒均匀。衬底温度为600℃时,所得到的ZnO薄膜结构完整,晶粒尺寸最

LiAlO2衬底上ZnO薄膜的溶胶-凝胶法制备和表征

采用溶胶凝胶法在LiAlO2（302）衬底上制备了ZnO薄膜。用X射线衍射（XRD）和扫描电镜（SEM）对样品的结构和形貌进行了表征。XRD结果表明,随着热处理温度的升高（350℃、450℃、550℃、600℃、800℃）,所得到的薄膜分别为单相ZnAl2O4（350℃）,ZnAl2O4和ZnO的混合相（450℃）以及单相的ZnO（550℃、600℃、800℃）,并且ZnO薄膜C轴择优取向的生长趋势随温度升高相应明显。SEM图像显示,随着热处理温度的升高,ZnO薄膜的粒径相应变大。

ZnO thin film surface acoustic wave based lab-on-a-chip

Lab-on-a-chip (LOC) is one of the most important microsystem applications with promise for use in microanalysis, drug development, diagnosis of illness and diseases etc. LOC typically consists of two main components: microfluidics and sensors. Integration of microfluidics and sensors on a single chip can greatly enhance the efficiency of biochemical reactions and the sensitivity of detection, increase the reaction/detection speed, and reduce the potential cross-contamination, fabrication time and cost etc. However, the mechanisms generally used for microfluidics and sensors are different, making the integration of the two main components complicated and increases the cost of the systems. A lab-on-a-chip system based on a single surface acoustic wave (SAW) actuation mechanism is proposed. SAW devices were fabricated on nanocrystalline ZnO thin films deposited on Si substrates using sputtering. Coupling of acoustic waves into a liquid induces acoustic streaming and motion of droplets. A streaming velocity up to ∼ 5cm/s and droplet pumping speeds of ∼lcm/s were obtained. It was also found that a higher order mode wave, the Sezawa wave is more effective in streaming and transportation of microdroplets. The ZnO SAW sensor has been used for prostate antigen/antibody biorecognition systems, demonstrated the feasibility of using a single actuation mechanism for lab-on-a-chip applications. © 2010 Materials Research Society.

Low temperature (< 100 °c) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu2O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu2O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu2O films are reported. It is known from previously published work that the formation of pure Cu2O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu2O thin films (as opposed to CuO or mixed phase CuO/Cu2O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu2O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu2O films with electrical resistivity ranging from 102 to 104 Ω-cm, hole mobility of 1-10 cm2/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu 2O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu2O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells. © 2011 Elsevier B.V. All rights reserved.

UV photoconductivity characteristics of ZnO nanowire field effect transistor treated by proton irradiation

We investigated the UV photoconductivity characteristics of ZnO nanowire field effect transistors (FETs) irradiated by proton beams. After proton beam irradiation (using a beam energy of 10 MeV and a fluence of 10 12 cm -2), the drain current and carrier density in the ZnO nanowire FETs decreased, and the threshold voltage shifted to the positive gate bias direction due to the creation of interface traps at the SiO 2/ZnO nanowire interface by the proton beam. The interface traps produced a higher surface barrier potential and a larger depletion region at the ZnO nanowire surface, affecting the photoconductivity and its decay time. The UV photoconductivity of the proton-irradiated ZnO nanowire FETs was higher and more prolonged than that of the pristine ZnO nanowire FETs. The results extend our understanding of the UV photoconductivity characteristics of ZnO nanowire devices and other materials when irradiated with highly energetic particles. © 2012 Elsevier B.V. All rights reserved.

One-pot synthesis of intercalating ZnO nanoparticles for enhanced dye-sensitized solar cells

In this letter we report a facile one-pot synthesis of intercalated ZnO particles for inexpensive, low-temperature solution processed dye-sensitised solar cells. High interconnectivity facilitates enhanced charge transfer between the ZnO nanoparticles and a consequent enhancement in cell efficiency. ZnO thin films were formed from a wide range of nanoparticle diameters which simultaneously increased optical scattering whilst enhancing dye loading. A possible growth mechanism was proposed for the synthesis of ZnO nanoparticles. The intercalated ZnO nanoparticle thin films were integrated into the photoanodes of dye-sensitised solar cells which showed an increase in performance of 37% compared to structurally equivalent cells employing ZnO nanowires. © 2012 Elsevier B.V.

Direct comparison of the gravimetric responsivities of ZnO-based FBARs and SMRs

Film bulk acoustic resonators (FBARs) and solidly mounted resonators (SMRs) have the potential to significantly improve upon the sensitivity and minimum detection limit of traditional gravimetric sensors based on quartz crystal microbalances (QCMs) and surface acoustic wave resonators (SAWs). To date, neither FBAR nor SMR devices have been demonstrated to be superior to the other; hence the choice between them depends primarily on the users' ability to design/fabricate membranes and/or Bragg reflectors. In this work, it is shown that identically designed FBAR and SMR devices resonating at the same frequency exhibit different responsivities to mass loadings, Rm, and that the SMRs are less responsive than the FBARs. For the specific device design and resonant frequency (~2 GHz) of the resonators presented here, the FBARs' mass responsivity is ~20% greater than that of the SMRs', and although this value is not universal for all possible device designs, it clearly shows that FBAR devices should be favoured over SMRs in gravimetric sensing applications where the FBARs' fragility is not an issue. Numerical calculations based on Mason's model offer an insight into the physical mechanisms behind the greater FBARs responsivity, and it was shown that the Bragg reflector has an effect on the acoustic load at one of the facets of the piezoelectric films which is in turn responsible for the SMRs' lower responsivity to mass loadings. © 2013 Elsevier B.V.

Enhancement of microfluidic efficiency with nanocrystalline diamond interlayer in the ZnO-based surface acoustic wave device

Ultra-smooth nanocrystalline diamond (UNCD) films with high-acoustic wave velocity were introduced into ZnO-based surface acoustic wave (SAW) devices to enhance their microfluidic efficiency by reducing the acoustic energy dissipation into the silicon substrate and improving the acoustic properties of the SAW devices. Microfluidic efficiency of the ZnO-based SAW devices with and without UNCD inter layers was investigated and compared. Results showed that the pumping velocities increase with the input power and those of the ZnO/UNCD/Si devices are much larger than those of the ZnO/Si devices at the same power. The jetting efficiency of the droplet was improved by introducing the UNCD interlayer into the ZnO/Si SAW device. Improvement in the microfluidic efficiency is mainly attributed to the diamond layer, which restrains the acoustic wave to propagate in the top layer rather than dissipating into the substrate. © 2013 Springer-Verlag Berlin Heidelberg.

First-principles study on the structural and electronic properties of ultrathin ZnO nanofilms

First-principles calculations; ZnO nanofilms; Electronic properties; Quantum effects； NANOBELTS; NANORINGS; WURTZITE; ENERGY Abstract: Using first-principles density-functional calculations, we have studied the structural and electronic properties Of Ultrathin ZnO {0001} nanofilms. The structural parameters, the charge densities, band structures and density of states have been investigated. The results show that there are remarkable charge transfers from Zn to O atoms in the ZOO nanofilms. All the ZOO nanofilms exhibit direct wide band gaps compared with bulk counterpart, and the gap decreases with increased thickness of the nanofilms. The decreased band gap is associated with the weaker ionic bonding within layers and the less localization of electrons in thicker films. A staircase-like density of states occurs at the bottom of conduction band, indicating the two-dimensional quantum effects in ZnO nanofilms.

Characterization of ZnMgO hexagonal-nanotowers/films on m-plane sapphire synthesized by metal organic chemical vapour deposition

ZnMgO hexagonal-nanotowers/films grown on m-plane sapphire substrates were successfully synthesized using a vertical low-pressure metal organic chemical vapour deposition system. The structural and optical properties of the as-obtained products were characterized using various techniques. They were grown along the non-polar [1 0 (1) over bar 0] direction and possessed wurtzite structure. The ZnMgO hexagonal-nanotowers were about 200 nm in diameter at the bottom and 120 nm in length. Photoluminescence and Raman spectra show that the products have good crystal quality with few oxygen vacancies. With Mg incorporation, multiple-phonon scattering becomes weak and broad, and the intensities of all observed vibrational modes decrease. The ultraviolet near band edge emission shows a clear blueshift (as much as 100 meV) and broadening compared with that of pure ZnO products.