Structure, stability and photoelectronic properties of transition films from amorphous to microcrystalline silicon

A series of hydrogenated silicon films near the threshold of crystallinity was prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) from a mixture of SiH4 diluted in H, The effect of hydrogen dilution ratios R-H = [H-2]/[SiH4] on microstructure of the films was investigated. Photoelectronic properties and stability of the films were studied as a function of crystalline fraction. The results show that more the crystalline volume fraction in the silicon films, the higher mobility life-time product (mu tau), better the stability and lower the photosensitivity. Those diphasic films contained 8%-31% crystalline volume fraction can gain both the fine photoelectronic properties and high stability. in the diphasic (contained 12% crystalline volume fraction) solar cell, we obtained a much lower light-induced degradation of similar to 2.9%, with a high initial efficiency of 10.01% and a stabilized efficiency of 9.72% (AM1.5, 100 mW/cm(2)). (c) 2005 Elsevier B.V. All rights reserved.

The microstructure of hydrogenated microcrystalline silicon thin films studied by small-angle x-ray scattering

The microstructures of hydrogenated microcrystalline silicon (tic-Si: H) thin films, prepared by plasma-enhanced chemical vapor deposition (PECVD), hot wire CVD(HWCVD) and plasma assisted HWCVD (PE-HWCVD), have been analyzed by the small angle x-ray scattering(SAXS) measurement. The SAXS data show that the microstructures of the μ c-Si: H films display different characteristics for different deposition techniques. For films deposited by PECVD, the volume fraction of micro-voids and mean size are smaller than those in HWCVD sample. Aided by suitable ion-bombardment, PE-HWCVD samples show a more compact structure than the HWCVD sample. The microstructure parameters of the μ c-Si: H thin films deposited by two-steps HWCVD and PE-HWCVD with Ar ions are evidently improved. The result of 45° tilting SAXS measurement indicates that the distribution of micro-voids in the film is anisotropic. The Fouriertransform infrared spectra confirm the SAXS data.

Nanostructure in the p-layer and its impacts on amorphous silicon solar cells

The open circuit voltage (V-oc) of n-i-p type hydrogenated amorphous silicon (a-Si:H) solar cells has been examined by means of experimental and numerical modeling. The i- and p-layer limitations on V-oc are separated and the emphasis is to identify the impact of different kinds of p-layers. Hydrogenated protocrystalline, nanocrystalline and microcrystalline silicon p-layers were prepared and characterized using Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), optical transmittance and activation energy of dark-conductivity. The n-i-p a-Si:H solar cells incorporated with these p-layers were comparatively investigated, which demonstrated a wide variation of V-oc from 1.042 V to 0.369 V, under identical i- and n-layer conditions. It is found that the nanocrystalline silicon (nc-Si:H) p-layer with a certain nanocrystalline volume fraction leads to a higher V-oc. The optimum p-layer material for n-i-p type a-Si:H solar cells is not found at the onset of the transition between the amorphous to mixed phases, nor is it associated with a microcrystalline material with a large grain size and a high volume fraction of crystalline phase. (c) 2006 Elsevier B.V. All rights reserved.

Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells

A wide bandgap and highly conductive p-type hydrogenated nanocrystalline silicon (nc-Si:H) window layer was prepared with a conventional RF-PECVD system under large H dilution condition, moderate power density, high pressure and low substrate temperature. The optoelectrical and structural properties of this novel material have been investigated by Raman and UV-VIS transmission spectroscopy measurements indicating that these films are composed of nanocrystallites embedded in amorphous SiHx matrix and with a widened bandgap. The observed downshift of the optical phonon Raman spectra (514.4 cm(-1)) from crystalline Si peak (521 cm(-1)) and the widening of the bandgap indicate a quantum confinement effect from the Si nanocrystallites. By using this kind of p-layer, a-Si:H solar cells on bare stainless steel foil in nip sequence have been successfully prepared with a V c of 0.90 V, a fill factor of 0.70 and an efficiency of 9.0%, respectively. (c) 2006 Elsevier B.V. All rights reserved.

Light-induced changes in diphasic nanocrystalline silicon films and solar cells

A series of diphasic nanocrystalline silicon films and solar cells was prepared using different hydrogen dilution ratios of silane by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). It was observed that after light soaking the open circuit voltage (V-oc) of the diphasic solar cells increased, while that of amorphous silicon solar cells decreased. Raman scattering spectroscopy was performed on the series of diphasic silicon films before and after light soaking. It was found that after light soaking the nanostruclures in the diphasic nanocrystalline silicon films were changed. Both the grain sizes and grain volume fraction reduced, while the grain boundary components increased. These results provide experimental evidence for the conjecture that the light-induced increase in V-oc of the diphasic nanocrystalline solar cells might be induced by the changes in the nanostructure of the intrinsic layer. (c) 2006 Elsevier B.V. All rights reserved.

Microstructure characterization of transition films from amorphous to nanocrocrystalline silicon

Hydrogenated silicon (Si:H) films near the threshold of crystallinity were prepared by very high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) using a wide range of hydrogen dilution R-H = [H-2]/[SiH4] values of 2-100. The effects of H dilution R-H on the structural properties of the films were investigated using micro-Raman scattering and Fourier transform infrared (FTIR) absorption spectroscopy. The obtained Raman spectra show that the H dilution leads to improvements in the short-range order and the medium-range order of the amorphous network and then to the morphological transition from amorphous to crystalline states. The onset of this transition locates between R-H = 30 and 40 in our case, and with further increasing R-H from 40 to 100, the nanocrystalline volume fraction increases from similar to23% to 43%, and correspondingly the crystallite size enlarges from similar to2.8 to 4.4 nm. The FTIR spectra exhibit that with R-H increasing, the relative intensities of both the SiH stretching mode component at 2100 cm(-1) and wagging mode component at 620 cm(-1) increase in the same manner. We assert that these variations in IR spectra should be associated with the formation of paracrystalline structures in the low H dilution films and nanocrystalline structures in the high H dilution films. (C) 2003 Elsevier Science B.V. All rights reserved.

Micro-Raman study on hydrogenated protocrystalline silicon films

Good quality hydrogenated protocrystalline silicon films were successfully prepared by radio frequency plasma enhanced chemical vapor deposition (PECVD) with various hydrogen dilution ratios (R = ([H-2]/[SiH4]) from 10 to 100). The photosensitivity of the films is up to 10(6) under the light intensity of 50mW.cm(-2). The microstructure of the films was studied by micro-region Raman scattering spectra at room temperature. The deconvolution of the Raman spectra by Gaussion functions shows that the films deposited under low hydrogen dilution ratios (R < 33) exhibit typical amorphous properties, while the films deposited under high hydrogen dilution ratios (R > 50) possess a diphasic structure, with increasing crystalline volume fraction with R. The size of the crystallites in the diphasic films is about 2.4 mm, which was deduced from the phonon confinement model. The intermediate range order of the silicon film increases with increasing hydrogen dilution ratio.

Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD

Tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (PECVD) system as a catalyzer: we name this technique 'hot-wire-assisted PECVD' (HW-PECVD). Under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (T-f) on the structural properties of the poly-Si films have been characterized by X-ray diffraction (XRD), Raman scattering and Fourier-transform infrared (FTIR) spectroscopy. Compared with conventional PECVD, the grain size, crystalline volume fraction (X-e) and deposition rate were all enhanced when a high T-f was used. The best poly-Si film exhibits a preferential (220) orientation, with a full width at half-maximum (FWHM) of 0.2 degrees. The Si-Si TO peak of the Raman scattering spectrum is located at 519.8 cm(-1) with a FWHM of 7.1 cm(-1). The X-c is 0.93. These improvements are mainly the result of promotion of the dissociation of SiH4 and an increase in the atomic H concentration in the gas phase. (C) 2001 Elsevier Science B.V. All rights reserved.

Refractive index dispersion measurement on nonlinear optical polymer using V-prism refractometer

By using V-prism refractometer, the refractive indices of a polyetherketone (PEK-c) guest-host polymer system were measured with the polymer in solutions. The Lorenz-Lorentz local field formalism was used in the calculation of the refractive indices of the polymers from the measured indices of the polymer solutions and the pure solvent by using V-prism refractometer. The refractive index dispersions of the polymers were obtained by fitting the measured indices of the polymers to Sellmeyer equation. The method allows for an accuracy in index of 0.7% in the determination of the polymer indices. In addition, a large difference between the indices of the polymer and the solvent, and a higher polymer volume fraction in the measured polymer solution are favorable for a high accuracy. (C) 2000 Elsevier Science Ltd. All rights reserved.

The effect of interposing nanocrystalline Si(B) P plus layer on the photovoltaic properties of a-Si: H tandem solar cells

Tandem amorphous silicon solar cells have attracted extensive interest because of better performance than single junction counterpart. As n/p junctions play an important role in the current transportation of tandem solar cells, it is important to design and fabricate good n/p junctions.The properties of the n/p junction of amorphous silicon (a-Si) were studied. We investigate the effect of interposing a nanocrystalline p(+) layer between n (top cell) and p (bottom cell) layers of a tandem solar cell. The crystalline volume fraction, the band gap, the conductivity and the grain size of the nanocrystalline silicon (nc-Si) p(+) layer could be modulated by changing the deposition parameters.Current transport in a-Si based n/p ("tunnel") junctions was investigated by current-voltage measurements. The voltage dependence on the resistance (V/J) of the tandem cells was examined to see if n/p junction was ohmic contact. To study the affection of different doping concentration to the properties of the nc-Si p(+) layers which varied the properties of the tunnel junctions, three nc-Si p(+) film samples were grown, measured and analyzed.

Nanostructure in the p-layer and its impacts on amorphous silicon solar cells

The open circuit voltage (V-oc) of n-i-p type hydrogenated amorphous silicon (a-Si:H) solar cells has been examined by means of experimental and numerical modeling. The i- and p-layer limitations on V-oc are separated and the emphasis is to identify the impact of different kinds of p-layers. Hydrogenated protocrystalline, nanocrystalline and microcrystalline silicon p-layers were prepared and characterized using Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), optical transmittance and activation energy of dark-conductivity. The n-i-p a-Si:H solar cells incorporated with these p-layers were comparatively investigated, which demonstrated a wide variation of V-oc from 1.042 V to 0.369 V, under identical i- and n-layer conditions. It is found that the nanocrystalline silicon (nc-Si:H) p-layer with a certain nanocrystalline volume fraction leads to a higher V-oc. The optimum p-layer material for n-i-p type a-Si:H solar cells is not found at the onset of the transition between the amorphous to mixed phases, nor is it associated with a microcrystalline material with a large grain size and a high volume fraction of crystalline phase. (c) 2006 Elsevier B.V. All rights reserved.

Light-induced changes in diphasic nanocrystalline silicon films and solar cells

A series of diphasic nanocrystalline silicon films and solar cells was prepared using different hydrogen dilution ratios of silane by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). It was observed that after light soaking the open circuit voltage (V-oc) of the diphasic solar cells increased, while that of amorphous silicon solar cells decreased. Raman scattering spectroscopy was performed on the series of diphasic silicon films before and after light soaking. It was found that after light soaking the nanostruclures in the diphasic nanocrystalline silicon films were changed. Both the grain sizes and grain volume fraction reduced, while the grain boundary components increased. These results provide experimental evidence for the conjecture that the light-induced increase in V-oc of the diphasic nanocrystalline solar cells might be induced by the changes in the nanostructure of the intrinsic layer. (c) 2006 Elsevier B.V. All rights reserved.

The methane hydrate formation and the resource estimate resulting from free gas migration in seeping seafloor hydrate stability zone

It is a typical multiphase flow process for hydrate formation in seeping seafloor sediments. Free gas can not only be present but also take part in formation of hydrate. The volume fraction of free gas in local pore of hydrate stable zone (HSZ) influences the formation of hydrate in seeping seafloor area, and methane flux determines the abundance and resource of hydrate-bearing reservoirs. In this paper, a multiphase flow model including water (dissolved methane and salt)-free gas hydrate has been established to describe this kind of flow-transfer-reaction process where there exists a large scale of free gas migration and transform in seafloor pore. In the order of three different scenarios, the conversions among permeability, capillary pressure, phase saturations and salinity along with the formation of hydrate have been deducted. Furthermore, the influence of four sorts of free gas saturations and three classes of methane fluxes on hydrate formation and the resource has also been analyzed and compared. Based on the rules drawn from the simulation, and combined information gotten from drills in field, the methane hydrate(MH) formation in Shenhu area of South China Sea has been forecasted. It has been speculated that there may breed a moderate methane flux below this seafloor HSZ. If the flux is about 0.5 kg m-2 a-1, then it will go on to evolve about 2700 ka until the hydrate saturation in pore will arrive its peak (about 75%). Approximately 1.47 109 m3 MH has been reckoned in this marine basin finally, is about 13 times over preliminary estimate.

Ag surface plasmon enhanced double-layer antireflection coatings for GaAs solar cells

Surface plasmon enhanced antireflection coatings for GaAs solar cells have been designed theoretically. The reflectance of double-layer antireflection coatings (ARCs) with different suspensions of Ag particles is calculated as a function of the wavelength according to the optical interference matrix and the Mie theory. The mean dielectric concept was adopted in the simulations. A significant reduction of reflectance in the spectral region from 300 to 400 nm was found to be beneficial for the design of ARCs. A new SiO_2/Ag-ZnS double-layer coating with better antireflection ability can be achieved if the particle volume fraction in ZnS is 1%-2%.

Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD

Tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (PECVD) system as a catalyzer: we name this technique 'hot-wire-assisted PECVD' (HW-PECVD). Under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (T-f) on the structural properties of the poly-Si films have been characterized by X-ray diffraction (XRD), Raman scattering and Fourier-transform infrared (FTIR) spectroscopy. Compared with conventional PECVD, the grain size, crystalline volume fraction (X-e) and deposition rate were all enhanced when a high T-f was used. The best poly-Si film exhibits a preferential (220) orientation, with a full width at half-maximum (FWHM) of 0.2 degrees. The Si-Si TO peak of the Raman scattering spectrum is located at 519.8 cm(-1) with a FWHM of 7.1 cm(-1). The X-c is 0.93. These improvements are mainly the result of promotion of the dissociation of SiH4 and an increase in the atomic H concentration in the gas phase. (C) 2001 Elsevier Science B.V. All rights reserved.