Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation

　

10 GHz optical short pulse generation using tandem electroabsorption modulators monolithically integrated with distributed feedback laser by ultra-low-pressure selective area growth

In this work, a novel light source of tandem InGaAsP/InGaAsP multiple quantum well electroabsoption modulator( EAM ) monolithically integrated with distributed feedback laser is fabricated by ultra-low-pressure ( 22 x 10(2) Pa ) selective area growth metal-organic chemical vapor diposition technique. Superior device performances have been obtained, such as low threshold current of 19 mA, output light power of 4.5 mW, and over 20 dB extinction ratio at 5 V applied voltage when coupled into a single mode fiber. Over 10 GHz 3dB bandwidth in EAM part is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device, 10 GHz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained due to the gate operation effect of tandem EAMs.

The effect of interposing nanocrystalline Si(B) P plus layer on the photovoltaic properties of a-Si: H tandem solar cells

Tandem amorphous silicon solar cells have attracted extensive interest because of better performance than single junction counterpart. As n/p junctions play an important role in the current transportation of tandem solar cells, it is important to design and fabricate good n/p junctions.The properties of the n/p junction of amorphous silicon (a-Si) were studied. We investigate the effect of interposing a nanocrystalline p(+) layer between n (top cell) and p (bottom cell) layers of a tandem solar cell. The crystalline volume fraction, the band gap, the conductivity and the grain size of the nanocrystalline silicon (nc-Si) p(+) layer could be modulated by changing the deposition parameters.Current transport in a-Si based n/p ("tunnel") junctions was investigated by current-voltage measurements. The voltage dependence on the resistance (V/J) of the tandem cells was examined to see if n/p junction was ohmic contact. To study the affection of different doping concentration to the properties of the nc-Si p(+) layers which varied the properties of the tunnel junctions, three nc-Si p(+) film samples were grown, measured and analyzed.

Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation - art. no. 60200O

A novel device of tandem multiple quantum wells (MQWs) electroabsorption modulators (EAMs) monolithically integrated with DFB laser is fabricated by ultra-low-pressure (22 mbar) selective area guowth (SAG) MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mX output light power of 4.5 mW and over 20 dB extinction ratio when coupled into a single mode Fiber. Moreover, over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using I this sinusoidal voltage driven integrated device, 10GHz repetition rate pulse with a width of 13.7 ps without any compression elements is obtained.

Evaluating the effect of dislocation on the photovoltaic performance of metamorphic tandem solar cells

The photovoltaic conversion efficiency for monolithic GaInP/GaInAs/Ge triple-junction cell with various bandgap combination (300 suns, AM1.5d) was theoretically calculated. An impressive improvement on conversion efficiency was observed for a bandgap combination of 1.708, 1.194, and 0.67 eV. A theoretical investigation was carried out on the effect of dislocation on the metamorphic structure's efficiency by regarding dislocation as minority-carrier recombination center. The results showed that only when dislocation density was less than 1.6x10(6) cm(-2), can this metamorphic combination exhibit its efficiency advantage over the fully-matched combination. In addition, we also briefly evaluated the lattice misfit dependence of the dislocation density for a group of metamorphic triple-junction system, and used it as guidance for the choice of the proper cell structure.

Tandem organic light-emitting diodes with an effective charge-generation connection structure

The tandem organic light-emitting diodes (OLEDs) with an effective charge-generation connection structure of Mg-doped tris(8-hydroxyquinoline) aluminum (Alq(3))/Molybdenum oxide (MoO3)-doped 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) were presented. At a current density of 50 mA/cm(2), the current efficiency of the tandem OLED with two standard NPB/Alq(3) emitting units is 4.2 cd/A, which is 1.7 times greater than that of the single EL device. The tandem OLED with the similar connection structure of Mg-doped PTCDA/MoO3-doped PTCDA was also fabricated and the influences of the different connection units on the current efficiency of the tandem OLED were discussed as well.

Microcrystalline silicon films and tandem solar cells prepared by triode PECVD

This paper investigates the effects of the diphasic structure on the optoelectronic properties of hydrogenated microcrystalline silicon (mu c-Si:H) films prepared in a triode three-chamber plasma-enhanced chemical vapor deposition (PECVD) system. The influences of boron-compensation doping on the dark-and photo-conductivity of mu c-Si:H films are also described. A tandem solar cell with an entirely mu c-Si:H p-i-n bottom cell and an a-Si:H top cell has been prepared with an initial conversion efficiency of 8.91% (0.126 cm(2), AM1.5, 100 mW/cm(2)).

Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell

Boron-doped hydrogenated silicon films with different gaseous doping ratios (B_2H_6/SiH_4) were deposited in a plasma-enhanced chemical vapor deposition (PECVD) system. The microstructure of the films was investigated by atomic force microscopy (AFM) and Raman scattering spectroscopy. The electrical properties of the films were characterized by their room temperature electrical conductivity (σ) and the activation energy (E_a). The results show that with an increasing gaseous doping ratio, the silicon films transfer from a microcrystalline to an amorphous phase, and corresponding changes in the electrical properties were observed. The thin boron-doped silicon layers were fabricated as recombination layers in tunnel junctions. The measurements of the Ⅰ-Ⅴ characteristics and the transparency spectra of the junctions indicate that the best gaseous doping ratio of the recombination layer is 0.04, and the film deposited under that condition is amorphous silicon with a small amount of crystallites embedded in it. The junction with such a recombination layer has a small resistance, a nearly ohmic contact, and a negligible optical absorption.

Assessment of I-129 measurement at low MV tandem voltages

IEECAS SKLLQG

All-organic tunnel junctions as connecting units in tandem organic solar cell

We employed organic heterojunction films as all-organic connecting units to fabricate tandem organic photovoltaic cells by continuous deposition. The all-organic connecting units with a better transparence and a lower sublimation temperature became an effective recombination center for electrons and holes photogenerated in front cell and back cell, respectively. Tunnel mechanism was proposed to explain the combination of photogenerated carrier.

Structural characterization and identification of dibenzocyclooctadiene lignans in Fructus Schisandrae using electrospray ionization ion trap multiple-stage tandem mass spectrometry and electrospray ionization Fourier transform ion cyclotron resonance multiple-stage tandem mass spectrometry

The electrospray ionization ion trap multiple-stage tandem mass spectrometry (ESI-MSn) and electrospray ionization Fourier transform ion cyclotron resonance multiple-stage tandem mass spectrometry (ESI-FT-ICR-MSn) have been applied successfully to the direct investigation of a number of dibenzocyclooctadiene lignan constituents from the methanol extracts of the Fructus Schisandrae in the positive ion mode. The detailed structural characterization of the same skeleton and different peripheral substituents had been studied and the precise elemental compositions of ions at high mass resolution had been obtained. So the fragmentation mechanisms could be clarified.

Studies on the stability of diester-diterpenoid alkaloids from the genus Aconitum L. by high performance liquid chromatography combined with electrospray ionisation tandem mass spectrometry (HPLC/ESI/MSn)

The stability of diester-diterpenoid alkaloids (DDA) from plants of the genus Aconitum L. has been studied in different solvents and pH buffers. The HPLC/ESIMS method for analysing the concentration of DDA was established and DDA's decomposition products were elucidated by HPLC/ESI-MS/MSn. In different solvents, e.g. dichloromethane, ether, methanol and distilled water, the decomposition pathways of DDA are quite different and their difference in stabilities depends on the difference of their structures, in which substituents at the N atom and substituents at C-3 are different. The pyrolytic products of DDA, such as deacetoxy aconitine-type alkaloids, have been observed in the above solvents, whereas 8-methoxy-14-benzoyl aconitine-type alkaloids have been obtained only in methanol.

Al/WO3/Au as the interconnecting layer for efficient tandem white organic light-emitting diodes

White light emission from tandem organic light-emitting diodes consisting of blue and red light units separated by a transparent interconnecting layer of Al/WO3/Au has been realized. The devices have a structure of indium-tin-oxide (ITO)/molybdenum oxide (MoO3) (8 nm)/N, N'-di(naphthalene-1-yl)-N, N'-diphenyl-benzidine (NPB)(100 nm)/p-bis(p-N, N-diphenyl-aminostyryl) benzene) (DSA-ph): 2-methyl-9,10-di(2-naphthyl) anthracene (MADN)(40 nm)/tris(8-hydroxylquinoline) aluminium (Alq(3)) (10 nm)/LiF(1 nm)/Al(2 nm)/WO3(3 nm)/Au(16 nm)/MoO3(5 nm)/NPB(60 nm)/Alq(3): 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB)(30 nm)/Alq3(30 nm)/LiF(1 nm)/Al(150 nm).

Novel spiro-fluorenes from tandem radical addition for liquid crystalline monodisperse conjugated oligomers

3'-Nonafluorobutylmethyl-4'-methyl-spiro[cyclopentyl-9,1']fluorenes were successfully synthesized via tandem radical-addition reactions between 9,9-diallylfluorenes and perfluorobutyl iodide in the presence of a radical initiator followed by reduction under mild conditions. Single crystal analysis indicates that two substituents at 3,4-positions of cyclopentane are in a maleinoid form. Accordingly, four oligo(fluorene-co-bithiophene)s with the same molecular length of similar to 10 nm (7 fluorene units and 12 thiophene units) containing one to three novel spiro-fluorene units were synthesized.

Analysis of Saponins from Leaves of Aralia elata by Liquid Chromatography and Multi-stage Tandem Mass Spectrometry

Four saponins were isolated from the leaves of Aralia elata, and established using NMR and other spectroscopic methods, as well as data reported in the literature. Three Aralia saponins from the leaves of Aralia elata sharing the same structures as those isolated from the root bark suggested that the leaves would be a good substitute for the root bark of Aralia elata. These four Aralia saponins were then extensively investigated using complementarily positive and negative electrospray ionization multistage tandem mass spectrometry (ESI-MSn). Two isomers of saponins with different sugar linkages were then successfully differentiated by positive ESI-MSn and verified with different retention times and the collision-induced dissociation (CID) spectra by LC-MS. A simple and effective LC-MS method was thus developed for the rapid identification and screening of these saponins in plant extracts from leaves of Aralia elata.