Layer-dependent resonant Raman scattering of a few layer MoS2

We report resonant Raman scattering of MoS2 layers comprising of single, bi, four and seven layers, showing a strong dependence on the layer thickness. Indirect band gap MoS2 in bulk becomes a direct band gap semiconductor in the monolayer form. New Raman modes are seen in the spectra of single- and few-layer MoS2 samples which are absent in the bulk. The Raman mode at similar to 230 cm(-1) appears for two, four and seven layers. This mode has been attributed to the longitudinal acoustic phonon branch at the M point (LA(M)) of the Brillouin zone. The mode at similar to 179 cm(-1) shows asymmetric character for a few-layer sample. The asymmetry is explained by the dispersion of the LA(M) branch along the G-M direction. The most intense spectral region near 455 cm(-1) shows a layer-dependent variation of peak positions and relative intensities. The high energy region between 510 and 645 cm(-1) is marked by the appearance of prominent new Raman bands, varying in intensity with layer numbers. Resonant Raman spectroscopy thus serves as a promising non invasive technique to accurately estimate the thickness of MoS2 layers down to a few atoms thick. Copyright (C) 2012 John Wiley & Sons, Ltd.

Proportional resonant controller based circulating power setup for thermal testing of multilevel inverter

A regenerative or circulating-power method is presented in this paper for heat run test on the legs of a three-level neutral point clamped (NPC) inverter. This test ensures that only losses are drawn from the dc supply, while rated power is circulated between the two legs, thus minimising wastage of energy. A proportional-resonant (PR) controller based current control scheme is proposed here for the circulating power test setup in NPC inverter. Simulation and experimental results are presented to validate the controller design at various operating conditions. Results of thermal test on the inverter legs are presented at two different operating conditions.

Direct Band-to-Band Tunneling in Reverse Biased MoS2 Nanoribbon p-n Junctions

We investigate the direct band-to-band tunneling (BTBT) in a reverse biased molybdenum disulfide (MoS2) nanoribbon p-n junction by analyzing the complex band structure obtained from semiempirical extended Huckel method under relaxed and strained conditions. It is demonstrated that the direct BTBT is improbable in relaxed monolayer nanoribbon; however, with the application of certain uniaxial tensile strain, the material becomes favorable for it. On the other hand, the relaxed bilayer nanoribbon is suitable for direct BTBT but becomes unfavorable when the applied uniaxial tensile or compressive strain goes beyond a certain limit. Considering the Wentzel-Kramers-Brillouin approximation, we evaluate the tunneling probability to estimate the tunneling current for a small applied reverse bias. Reasonably high tunneling current in the MoS2 nanoribbons shows that it can take advantage over graphene nanoribbon in future tunnel field-effect transistor applications.

The effect of environmental coupling on tunneling of quasiparticles in Josephson junctions

We study quasiparticle tunneling in Josephson tunnel junctions embedded in an electromagnetic environment. We identify tunneling processes that transfer electrical charge and couple to the environment in a way similar to that of normal electrons, and processes that mix electrons and holes and are thus creating charge superpositions. The latter are sensitive to the phase difference between the superconductors and are thus limited by phase diffusion even at zero temperature. We show that the environmental coupling is suppressed in many environments, thus leading to lower quasiparticle decay rates and better superconductor qubit coherence than previously expected. Our approach is nonperturbative in the environmental coupling strength.

Space vector based modulation scheme for reducing capacitor RMS current in three-level diode-clamped inverter

The DC capacitor is an important component in a voltage source inverter.The RMS current flowing through the capacitor determines the capacitor size and losses. The losses, in turn, influence the capacitor life. This paper proposes a space vector based modulation strategy for reducing the capacitor RMS current in a three-level diode-clamped inverter. An analytical closed-form expression is derived for the DC capacitor RMS current with the proposed PWM strategy. The analytical expression is validated through simulations and also experimentally. Theoretical and experimental results are presented, comparing the proposed strategy with conventional space vector PWM (CSVPWM). It is shown that the proposed strategy reduces the capacitor RMS current significantly at high modulation indices and high power factors. (C) 2014 Elsevier B.V. All rights reserved.

A non-resonant mass sensor to eliminate the ``missing mass'' effect during mass measurement of biological materials

Resonant sensors and crystal oscillators for mass detection need to be excited at very high natural frequencies (MHz). Use of such systems to measure mass of biological materials affects the accuracy of mass measurement due to their viscous and/or viscoelastic properties. The measurement limitation of such sensor system is the difficulty in accounting for the ``missing mass'' of the biological specimen in question. A sensor system has been developed in this work, to be operated in the stiffness controlled region at very low frequencies as compared to its fundamental natural frequency. The resulting reduction in the sensitivity due to non-resonant mode of operation of this sensor is compensated by the high resolution of the sensor. The mass of different aged drosophila melanogaster (fruit fly) is measured. The difference in its mass measurement during resonant mode of operation is also presented. That, viscosity effects do not affect the working of this non-resonant mass sensor is clearly established by direct comparison. (C) 2014 AIP Publishing LLC.

Effect of Micro-Structured Copper as Cathode Material for P3HT-Based Diode

Here, the effect of micro-structured cathode material on the device performance of indium tin oxide/poly(3hexylethiophene)/copper diode (ITO/P3HT/Cu) is investigated. Two different forms of copper namely bulk metal (Cu{B}) and nanoparticle (Cu{N}) were used as top electrode to probe its effect on device performance. Crystallographic structure and nanoscale morphology of top Cu electrodes were characterized using X-ray diffraction and scanning electronmicroscopy. Electrode formed by evaporation of copper nanoparticle showed enhancement in current density. From capacitance based spectroscopy we observed that density of trap states in ITO/P3HT/copper larger size grain (Cu-LG) are one order greater than that in ITO/P3HT/copper smaller size grain (Cu-SG) device.

Efficient charge transfer and field-induced tunneling transport in hybrid composite device of organic semiconductor and cadmium telluride quantum dots

Temperature and photo-dependent current-voltage characteristics are investigated in thin film devices of a hybrid-composite comprising of organic semiconductor poly(3,4-ethylenedioxythiophene): polystyrenesulfonate (PEDOT: PSS) and cadmium telluride quantum dots (CdTe QDs). A detailed study of the charge injection mechanism in ITO/PEDOT: PSS-CdTe QDs/Al device exhibits a transition from direct tunneling to Fowler-Nordheim tunneling with increasing electric field due to formation of high barrier at the QD interface. In addition, the hybrid-composite exhibits a huge photoluminescence quenching compared to aboriginal CdTe QDs and high increment in photoconductivity (similar to 400%), which is attributed to the charge transfer phenomena. The effective barrier height (Phi(B) approximate to 0.68 eV) is estimated from the transition voltage and the possible origin of its variation with temperature and photo-illumination is discussed. (C) 2015 AIP Publishing LLC.

Measuring the linewidth of a stabilized diode laser

We demonstrate a straightforward technique to measure the linewidth of a grating-stabilized diode laser system - known as an external cavity diode laser (ECDL) - by beating the output of two independent ECDLs in a Michelson interferometer, and then taking the Fourier transform of the beat signal. The measured linewidth is the sum of the linewidths of the two laser systems. Assuming that the two are equal, we find that the linewidth of each ECDL measured over a time period of 2. s is about 0.3 MHz. This narrow linewidth shows the advantage of using such systems for high-resolution spectroscopy and other experiments in atomic physics.

Variations in the cyclotron resonant scattering features during 2011 outburst of 4U 0115+63

We study the variations in the Cyclotron Resonant Scattering Feature (CRSF) during 2011 outburst of the high mass X-ray binary 4U 0115+63 using observations performed with Suzaku, RXTE, Swift and INTEGRAL satellites. The wide-band spectral data with low-energy coverage allowed us to characterize the broad-band continuum and detect the CRSFs. We find that the broad-band continuum is adequately described by a combination of a low temperature (kT similar to 0.8 keV) blackbody and a power law with high energy cutoff (E-cut similar to 5.4 keV) without the need for a broad Gaussian at similar to 10 keV as used in some earlier studies. Though winds from the companion can affect the emission from the neutron star at low energies (<3 keV), the blackbody component shows a significant presence in our continuum model. We report evidence for the possible presence of two independent sets of CRSFs with fundamentals at similar to 11 and similar to 15 keV. These two sets of CRSFs could arise from spatially distinct emitting regions. We also find evidence for variations in the line equivalent widths, with the 11 keV CRSF weakening and the 15 keV line strengthening with decreasing luminosity. Finally, we propose that the reason for the earlier observed anticorrelation of line energy with luminosity could be due to modelling of these two independent line sets (similar to 11 and similar to 15 keV) as a single CRSF.

Thermal Modeling of Organic Light-Emitting Diode Display Panels

Power densities required to operate active-matrix organic-light-emitting diode (AMOLED) based displays for high luminance applications, lead to temperature rise due to self heating. Temperature rise leads to significant degradation and consequent reduction in life time. In this work numerical techniques based computational fluid dynamics (CFD) is used to determine the temperature rise and its distribution for an AMOLED based display for a given power density and size. Passive cooling option in form of protruded rectangular fins is implemented to reduce the display temperature.