Elastic Waves in a Hybrid Multilayered Piezoelectric Plate

An analytical-numerical method is presented for analyzing dispersion and characteristic surface of waves in a hybrid multilayered piezoelectric plate. In this method, the multilayered piezoelectric plate is divided into a number of layered elements with three-nodal-lines in the wall thickness, the coupling between the elastic field and the electric field is considered in each element. The associated frequency dispersion equation is developed and the phase velocity and slowness, as well as the group velocity and slowness are established in terms of the Rayleigh quotient. Six characteristic wave surfaces are introduced to visualize the effects of anisotropy and piezoelectricity on wave propagation. Examples provide a full understanding for the complex phenomena of elastic waves in hybrid multilayered piezoelectric media.

Coherent Structures in Transition of a Flat-Plate Boundary Layer at Ma=0.7

Direct numerical simulation (DNS) of a spatially evolving flat-plate boundary layer transition process at free stream Mach number 0.7 is performed. Tollmien-Schlichting (T-S) waves are added on the inlet boundary as the disturbances before transition. Typical coherent structures in the transition process are investigated based on the second invariant of velocity gradient tensor. The instantaneous shear stress and the mean velocity profile in the transition region are studied. In our view, the fact that the peak value of shear stress in the stress concentration area increases and exceeds a threshold value during the later stage of the transition process plays an important role in the laminar breakdown process.

The relationship of SIF between plate and plane fracture problems and the effect of the plate thickness on SIF

In the present paper, it is shown that the zero series eigenfunctions of Reissner plate cracks/notches fracture problems are analogous to the eigenfunctions of anti-plane and in-plane. The singularity in the double series expression of plate problems only arises in zero series parts. In view of the relationship with eigen-values of anti-plane and in-plane problem, the solution of eigen-values for Reissner plates consists of two parts: anti-plane problem and in-plane problem. As a result the corresponding eigen-values or the corresponding eigen-value solving programs with respect to the anti-plane and in-plane problems can be employed and many aggressive SIF computed methods of plane problems can be employed in the plate. Based on those, the approximate relationship of SIFs between the plate and the plane fracture problems is figured out, and the effect relationship of the plate thickness on SIF is given.

A New Designed Two-Dimensional Bifurcation Parallel-Plate Flow Chamber

解决平行平板流槽每次实验只能观测壁面培养细胞受一种剪应力作用的问题。作者在平行平板流槽的基础上,首次提出了一种改进后的流槽--二维平板分叉流槽。通过数值模拟,给出了流体作定常流动时,流速和壁面剪应力的分布。结果发现,利用这种二维平板分叉流槽可以研究壁面培养的细胞在不同大小剪应力作用下的力学行为。该研究结果为流槽的合理设计和使用,并分析剪应力空间分布对内皮细胞的影响有重要实际意义。

Ink-jet printing of carbon nanotube thin film transistors

Ink-jet printing is an important process for placing active electronics on plastic substrates. We demonstrate ink-jet printing as a viable method for large area fabrication of carbon nanotube (CNT) thin film transistors (TFTs). We investigate different routes for producing stable CNT solutions ("inks"). These consist of dispersion methods for CNT debundling and the use of different solvents, such as N -methyl-2-pyrrolidone. The resulting printable inks are dispensed by ink-jet onto electrode bearing silicon substrates. The source to drain electrode gap is bridged by percolating networks of CNTs. Despite the presence of metallic CNTs, our devices exhibit field effect behavior, with effective mobility of ∼0.07 cm2 /V s and ON/OFF current ratio of up to 100. This result demonstrates the feasibility of ink-jet printing of nanostructured materials for TFT manufacture. © 2007 American Institute of Physics.

High performance nanocomposite thin film transistors with bilayer carbon nanotube-polythiophene active channel by ink-jet printing

Nanocomposite thin film transistors (TFTs) based on nonpercolating networks of single-walled carbon nanotubes (CNTs) and polythiophene semiconductor [poly [5, 5′ -bis(3-dodecyl-2-thienyl)- 2, 2′ -bithiophene] (PQT-12)] thin film hosts are demonstrated by ink-jet printing. A systematic study on the effect of CNT loading on the transistor performance and channel morphology is conducted. With an appropriate loading of CNTs into the active channel, ink-jet printed composite transistors show an effective hole mobility of 0.23 cm 2 V-1 s-1, which is an enhancement of more than a factor of 7 over ink-jet printed pristine PQT-12 TFTs. In addition, these devices display reasonable on/off current ratio of 105-10 6, low off currents of the order of 10 pA, and a sharp subthreshold slope (<0.8 V dec-1). The work presented here furthers our understanding of the interaction between polythiophene polymers and nonpercolating CNTs, where the CNT density in the bilayer structure substantially influences the morphology and transistor performance of polythiophene. Therefore, optimized loading of ink-jet printed CNTs is crucial to achieve device performance enhancement. High performance ink-jet printed nanocomposite TFTs can present a promising alternative to organic TFTs in printed electronic applications, including displays, sensors, radio-frequency identification (RFID) tags, and disposable electronics. © 2009 American Institute of Physics.

A Lagrangian for von Karman Equations of Large Deflection Problem of Thin Circular Plate

By the semi-inverse method proposed by He, a Lagrangian is established for the large deflection problem of thin circular plate. Ritz method is used to obtain an approximate analytical solution of the problem. First order approximate solution is obtained, which is similar to those in open literature. By Mathematica a more accurate solution can be deduced.

Low loss HF band SOI wine glass bulk mode capacitive square-plate resonator

This paper reports on the design and electrical characterization of a single crystal silicon micromechanical square-plate resonator. The microresonator has been excited in the anti-symmetrical wine glass mode at a resonant frequency of 5.166 MHz and exhibits an impressive quality factor (Q) of 3.7 × 106 at a pressure of 33 mtorr. The device has been fabricated in a commercial foundry process. An associated motional resistance of approximately 50 kΩ using a dc bias voltage of 60 V is measured for a transduction gap of 2 νm due to the ultra-high Q of the resonator. This result corresponds to a frequency-Q product of 1.9 × 1013, the highest reported for a fundamental mode single-crystal silicon resonator and on par with some of the best quartz crystal resonators. The results are indicative of the superior performance of silicon as a mechanical material, and show that the wine glass resonant mode is beneficial for achieving high quality factors allowed by the material limit. © 2009 IOP Publishing Ltd.