Optimization of nanotube electrode geometry in a liquid crystal media from wavefront aberrations

This paper presents experimental optimization of number and geometry of nanotube electrodes in a liquid crystal media from wavefront aberrations for realizing nanophotonic devices. The refractive-index gradient profiles from different nanotube geometries-arrays of one, three, four, and five-were studied along with wavefront aberrations using Zernike polynomials. The optimizations help the device to make application in the areas of voltage reconfigurable microlens arrays, high-resolution displays, wavefront sensors, holograms, and phase modulators. © 2012 Optical Society of America.

Ferroelectric liquid crystal over silicon devices

Over the past 20 years, ferroelectric liquid crystal over silicon (FLCOS) devices have made a wide impact on applications as diverse as optical correlation and holographic projection. To cover the entire gamut of this technology would be difficult and long winded; hence, this paper describes the significant developments of FLCOS within the Engineering Department at the University of Cambridge.The purpose of this paper is to highlight the key issues in fabricating silicon backplane spatial light modulators (SLMs) and to indicate ways in which the technology can be fabricated using cheap, low-density production and manufacturability. Three main devices have been fabricated as part of several research programmes and are documented in this paper. The fast bitplane SLM and the reconfigurable optical switches for aerospace and telecommunications systems (ROSES) SLM will form the basis of a case study to outline the overall processes involved. There is a great deal of commonality in the fabrication processes for all three devices, which indicates their potential strength and demonstrates that these processes can be made independent of the SLMs that are being assembled. What is described is a generic process that can be applied to any silicon backplane SLM on a die-by-die basis. There are hundreds of factors that can affect the yield in a manufacturing process and the purpose of a good process design procedure is to minimise these factors. One of the most important features in designing a process is fabrication experience, as so many of the lessons in this business can only be learned this way. We are working with the advantage of knowing the mistakes already made in the flat panel display industry, but we are also faced with the fact that those mistakes took many years and many millions of dollars to make.The fabrication process developed here originates and adapts earlier processes from various groups around the world. There are also a few totally new processes that have now been adopted by others in the field. Many, such as the gluing process, are still on-going and have to be worked on more before they will fully suit 'manufacturability'. © 2012 Copyright Taylor and Francis Group, LLC.

Light-matter interaction in a microcavity-controlled graphene transistor

Graphene has extraordinary electronic and optical properties and holds great promise for applications in photonics and optoelectronics. Demonstrations including high-speed photodetectors, optical modulators, plasmonic devices, and ultrafast lasers have now been reported. More advanced device concepts would involve photonic elements such as cavities to control light-matter interaction in graphene. Here we report the first monolithic integration of a graphene transistor and a planar, optical microcavity. We find that the microcavity-induced optical confinement controls the efficiency and spectral selection of photocurrent generation in the integrated graphene device. A twenty-fold enhancement of photocurrent is demonstrated. The optical cavity also determines the spectral properties of the electrically excited thermal radiation of graphene. Most interestingly, we find that the cavity confinement modifies the electrical transport characteristics of the integrated graphene transistor. Our experimental approach opens up a route towards cavity-quantum electrodynamics on the nanometre scale with graphene as a current-carrying intra-cavity medium of atomic thickness. © 2012 Macmillan Publishers Limited. All rights reserved.

Graphene field-effect transistors as room-temperature terahertz detectors

The unique optoelectronic properties of graphene make it an ideal platform for a variety of photonic applications, including fast photodetectors, transparent electrodes in displays and photovoltaic modules, optical modulators, plasmonic devices, microcavities, and ultra-fast lasers. Owing to its high carrier mobility, gapless spectrum and frequency-independent absorption, graphene is a very promising material for the development of detectors and modulators operating in the terahertz region of the electromagnetic spectrum (wavelengths in the hundreds of micrometres), still severely lacking in terms of solid-state devices. Here we demonstrate terahertz detectors based on antenna-coupled graphene field-effect transistors. These exploit the nonlinear response to the oscillating radiation field at the gate electrode, with contributions of thermoelectric and photoconductive origin. We demonstrate room temperature operation at 0.3 THz, showing that our devices can already be used in realistic settings, enabling large-area, fast imaging of macroscopic samples. © 2012 Macmillan Publishers Limited. All rights reserved.

Statistical inference for single- and multi-band probabilistic amplitude demodulation.

Amplitude demodulation is an ill-posed problem and so it is natural to treat it from a Bayesian viewpoint, inferring the most likely carrier and envelope under probabilistic constraints. One such treatment is Probabilistic Amplitude Demodulation (PAD), which, whilst computationally more intensive than traditional approaches, offers several advantages. Here we provide methods for estimating the uncertainty in the PAD-derived envelopes and carriers, and for learning free-parameters like the time-scale of the envelope. We show how the probabilistic approach can naturally handle noisy and missing data. Finally, we indicate how to extend the model to signals which contain multiple modulators and carriers.

Advanced spatial light modulator technology

This paper will review the advances which have been made in both electrically and optically addressed spatial light modulators and coding algorithms, which bring the realization of advanced optical systems such as 3D display closer. © OSA 2012.

Scalable, low-energy hybrid photonic space switch

A scalable monolithically integrated photonic space switch is proposed which uses a combination of Mach-Zehnder modulators and semiconductor optical amplifiers (SOAs) for improved crosstalk performance and reduced switch loss. This architecture enables the design of high-capacity, high-speed, large-port count, low-energy switches. Extremely low crosstalk of better than -50 dB can be achieved using a 2 × 2 dilated hybrid switch module. A 'building block' approach is applied to make large port count optical switches possible. Detailed physical layer multiwavelength simulations are used to investigate the viability of a 64 × 64 port switch. Optical signal degradation is estimated as a function of switch size and waveguide induced crosstalk. A comparison between hybrid and SOA switching fabrics highlights the power-efficient, high-performance nature of the hybrid switch design, which consumes less than one-third of the energy of an equivalent SOA-based switch. The significantly reduced impairments resulting from this switch design enable scaling of the port count, compared to conventional SOA-based switches. © 1983-2012 IEEE.

Chirp-enhanced direct modulation of a monolithic sub-Terahertz dual laser transmitter

A technique enabling 10 Gbps data to be directly modulated onto a monolithic sub-THz dual laser transmitter is proposed. As a result of the laser chirp, the logical zeros of the resultant sub-THz signal have a different peak frequency from that of the logical ones. The signal extinction ratio is therefore enhanced by suppressing the logical zeros with a filter stage at the receiver. With the aid of the chirp-enhanced filtering, an improved extinction ratio can be achieved at moderate modulation current. Hence, 10 GHz modulation bandwidth of the transmitter is predicted without the need for external modulators. In this paper, we demonstrate the operational principle by generating an error-free (bit error rate less than 10-9) 100 Mbps Manchester encoded signal with a centre frequency of 12 GHz within the bandwidth of an envelope detector, whilst direct modulation of a 100 GHz signal at data rates of up to 10 Gbps is simulated by using a transmission line model. This work could be a key technique for enabling monolithic sub-THz transmitters to be readily used in high speed wireless links. © 2013 IEEE.

Monolithic MZI-SOA hybrid switch for low-power and low-penalty operation.

We report the first experimental demonstration of a monolithically integrated hybrid dilated 2×2 modular optical switch using Mach-Zehnder modulators as low-loss 1×2 switching elements and short semiconductor optical amplifiers to provide additional extinction and gain. An excellent 40 dB cross-talk/extinction ratio is recorded with data-modulated signal-to-noise ratios of up to 44 dB in a 0.1 nm bandwidth. A switching time of 3 ns is demonstrated. Bit error rate studies show extremely low subsystem penalties of less than 0.1 dB, and studies indicate that, by using this hybrid switch building block, an 8×8 port switch could be achieved with 14 dB input power dynamic range for subsystem penalties of less than 0.5 dB.

Generation of 140 fs pulse train with widely tunable repetition rate through cascaded fibre compression techniques

The authors present numerical simulations of ultrashort pulse generation by a technique of linear spectral broadening in phase modulators and compression in dispersion compensating fibre, followed by a further stage of soliton compression in dispersion shifted fibre. This laser system is predicted to generate pulses of 140 fs duration with a peak power of 1.5 kW over a wide, user selectable repetition rate range while maintaining consistent characteristics of stability and pulse quality. The use of fibre compressors and commercially available modulators is expected to make the system setup compact and cost-effective. © The Institution of Engineering and Technology 2014.

1.3 μm quantum-dot electro-absorption modulator

The electro-absorption properties and Stark-shift of 1.3μm InGaAs quantum dot waveguide modulators are characterized under reverse bias. 2.5Gb/s data modulation is demonstrated for the first time with clear eye diagrams and error-free back-to-back performance. © 2007 Optical Society of America.

Effects of 2,3,7,8-TCDD and benzo[a]pyrene on modulating vitellogenin expression in primary culture of crucian carp (Carassius auratus) hepatocytes

Vitellogenin (Vtg) is the precursor of yolk protein. Its expression and secretion are estrogen-regulated and are crucial for oocyte maturation. An in vitro xenoestrogen screening model was established by measuring Vtg induction in cultured primary hepatocytes from crucian carp. Vtg production was detected by biotin-avidin sandwich ELISA method while Vtg and cytochrome P4501A1 (CYP1A1) mRNA induction were measured by semi- quantitative PCR-primer dropping technique. Vtg and Vtg mRNA were dose-dependently induced by diethylstilbestrol (DES, 0.2-200 ng/mL) in hepatocytes of crucian carp. Co-treatment of the DES-induced hepatocytes with either 2,3,7,8-TCDD (TCDD, 0.1-4 pg/mL) or benzo[a]pyrene (B[a]P, 5-1000 ng/mL) resulted in a reduction of Vtg production and an increment of CYP1A1 mRNA expression both in a dose dependent manner, indicating the anti-estrogenic effects of the compounds. However, at lower tested concentrations, TCDD (0.1, 0.2 pg/mL), B[a]P (5 ng/mL) seemed to have a potentiating effect on Vtg expression and secretion, although by their own these compounds had no observable estrogenic effect on Vtg induction. Tamoxifen (a selective estrogen receptor modulators, 1 nmol/L-1 mumol/L), and P-naphtho-flavone (beta-NF, an aryl hydrocarbon receptor inducing compounds, 2.5-1000 ng/mL) also were employed to study the possible interactions in DES-induced Vtg expression. In co-treatment of the DES-induced hepatocytes with beta-NF or tamoxifen, the decrease in Vtg production did parallel induction of CYP1A1 for beta-NF, but tamoxifen inhibited Vtg induction did not parallel induced CYP1A1 expression in all test concentrations. On the contrary, it was found that in co-treatment of the TCDD-induced hepatocytes with DES, TCDD induced CYP1A1 mRNA production was inhibited by DES also. These results implicated a possible cross talk between estrogen receptor- and aryl hydrocarbon receptor-mediated pathways in the hepatocytes.

Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk

We demonstrate a sub-nanosecond electro-optical switch with low crosstalk in a silicon-on-insulator (SOI) dual-coupled micro-ring embedded with p-i-n diodes. A crosstalk of -23 dB is obtained in the 20-mu m-radius micro-ring with the well-designing asymmetric dual-coupling structure. By optimizations of the doping profiles and the fabrication processes, the sub-nanosecond switch-on/off time of < 400 ps is finally realized under an electrical pre-emphasized driving signal. This compact and fast-response micro-ring switch, which can be fabricated by complementary metal oxide semiconductor (CMOS) compatible technologies, have enormous potential in optical interconnects of multicore networks-on-chip.

Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials

Infrared absorption spectroscopy, optical transient current spectroscopy (OTCS), and photoluminescence (PL) spectroscopy are used to investigate the annealing induced evolution of defects in low-temperature (LT)-grown GaAs-related materials. Two LT samples of bulk GaAs (sample A) and GaAs/AlxGa1-xAs multiple-quantum-well. (MQW) structure (sample B) were grown at 220 and 320 degreesC on (001) GaAs substrates, respectively. A strong defect-related absorption band has been observed in both as-grown samples A and B. It becomes weaker in samples annealed at temperatures above 600 degreesC. In sample A, annealed in the range of 600-800 degreesC, a large negative decay signal of the optical transient current (OTC) is observed in a certain range of temperature, which distorts deep-level spectra measured by OTCS, making it difficult to identify any deep levels. At annealing temperatures of 600 and 700 degreesC, both As-Ga antisite and small As cluster-related deep levels are identified in sample B. It is found that compared to the As cluster, the As-Ga antisite has a larger activation energy and carrier capture rate. At an annealing temperature of 800 degreesC, the large negative decay signal of the OTC is also observed in sample B. It is argued that this negative decay signal of the OTC is related to large arsenic clusters. For sample B, transient PL spectra have also been measured to study the influence of the, defect evolution on optical properties of LT GaAs/AlxGa1-xAs MQW structures. Our results clearly identify a defect evolution from AS(Ga) antisites to arsenic clusters after annealing.

Evolution from point defects to arsenic clusters in low-temperature grown GaAs/AlGaAs multiple quantum wells

Optical transient current spectroscopy (OTCS), photoluminescence (PL) spectroscopy and excitonic electroabsorption spectroscopy have been used to investigate the evolution of defects in the low-temperature grown GaAs/AlGaAs multiple quantum well structures during the postgrowth rapid thermal annealing. The sample was grown at 350 degrees C by molecular beam epitaxy on miscut (3.4 degrees off (001) towards (111)A) (001) GaAs substrate. After growth, the sample was subjected to 30s rapid thermal annealing in the range of 500-800 degrees C. It is found that the integrated PL intensity first decreases with the annealing temperature, then gets a minimum at 600 degrees C and finally recovers at higher temperatures. OTCS measurement shows that besides As,, antisites and arsenic clusters, there are several relatively shallower deep levels with excitation energies less than 0.3 eV in the as-grown and 500 degrees C-annealed samples. Above 600 degrees C, OTCS signals from As,, antisites and shallower deep levels become weaker, indicating the decrease of these defects. It is argued that the excess arsenic atoms group together to form arsenic clusters during annealing. (C) 2000 Elsevier Science B.V. All rights reserved.