Preparation of pH-sensitive polymer by thermal initiation polymerization and its application in fluorescence immunoassay

A fluorescence immunoassay for human IgG (Ag) was developed using a pH-sensitive polymer prepared by thermal initiation or redox initiation polymerization as a carrier. In the competitive immunoassay, appropriate quantity of Ag was immobilized on the polymer and the standard Ag (or sample) solution, and a constant amount of fluorescein isothiocyanate labeled goat anti-human IgG antibody (Ab-FITC) was added. Immobilized Ag and the standard (or sample) Ag competed for binding to the Ab-FITC in 37 C in homogeneous format. After changing the pH to separate the polymer-immune complex precipitate, it was re-dissolved and determined by fluorescence method. The results showed that the immobilization efficiency, immunological reaction activities of immobilized Au and phase transition pH range were improved as Ag was immobilized by thermal initiation instead of redox initiation polymerization. Under optimum conditions, the calibration graphs for the Ag in both methods, thermal initiation and redox initiation, were linear over the concentration range of 0.0-1000 ng mL(-1), with detection limits 8 (thermal initiation) and 12 ng mL(1) (redox initiation), respectively. Moreover, some pH-sensitive polymer prepared only in organic solvent or under high temperature could also be used as an immunoreaction carrier by thermal initiation polymerization. Thermal initiation polymerization was a better immobilization mode. (C) 2004 Elsevier B.V. All rights reserved.

Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface

Misfit defects in a 3C-SiC/Si (001) interface were investigated using a 200 kV high-resolution electron microscope with a point resolution of 0.194 nm. The [110] high-resolution electron microscopic images that do not directly reflect the crystal structure were transformed into the structure map through image deconvolution. Based on this analysis, four types of misfit dislocations at the 3C-SiC/Si (001) interface were determined. In turn, the strain relaxation mechanism was clarified through the generation of grow-in perfect misfit dislocations (including 90 degrees Lomer dislocations and 60 degrees shuffle dislocations) and 90 partial dislocations associated with stacking faults. (C) 2009 American Institute of Physics. [doi:10.1063/1.3234380]

Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure

Unintentionally doped high-Al-content Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT) structures with and without AlN interfacial layer were grown by metal-organic chemical vapor deposition (MOCVD) on two-inch sapphire substrates. The effects of AlN interfacial layer on the electrical properties were investigated. At 300 K, high two-dimensional electron gas (2DEG) density of 1.66 x 10(11) cm(-2) and high electron mobility of 1346 cm(2) V-1 s(-1) were obtained for the high Al content HEMT structure with a 1 nm AlN interfacial layer, consistent with the low average sheet resistance of 287 Omega/sq. The comparison of HEMT wafers with and without AlN interfacial layer shows that high Al content AlGaN/AlN/GaN heterostructures are potential in improving the electrical properties of HEMT structures and the device performances. (c) 2006 Elsevier B.V. All rights reserved.

Electrolyte electroreflectance spectroscopy studies on the interfacial behavior of the near-surface In0.15Ga0.85As/GaAs quantum well electrode vertical bar non-aqueous electrolyte

Electrolyte electroreflectance spectra of the near-surface strained-layer In0.15Ga0.85As/GaAs double single-quantum-well electrode have been studied at different biases in non-aqueous solutions of ferrocene and acetylferrocene. The optical transitions, the Franz-Keldysh oscillations (FKOs) and the quantum confined Stark effects (QCSE) of In0.15Ga0.85As/GaAs quantum well electrodes are analyzed. Electric field strengths at the In0.15Ga0.85As/GaAs interface are calculated in both solutions by a fast Fourier transform analysis of FKOs. A dip is exhibited in the electric field strength versus bias (from 0 to 1.2 V) curve in ferrocene solution. A model concerning the interfacial tunneling transfer of electrons is used to explain the behavior of the electric field. (C) 2001 Elsevier Science B.V. All rights reserved.

Interfacial behaviour of a quantum well electrode/electrolyte: EER spectra of an SQW GaAs/AlxGa1-xAs electrode in HQ+BQ non-aqueous electrolyte

The quantum-confined Stark effect and the Franz-Keldysh oscillation of a single quantum well (SQW) GaAs/AlxGa1-xAs electrode were studied in non-aqueous hydroquinone + benzoquinone solution with electrolyte electroreflectance spectroscopy. By investigation of the relation of the quantum-confined Stark effect and the Franz-Keldysh oscillation with applied external bias, the interfacial behaviour of an SQW electrode was analysed. (C) 1997 Elsevier Science S.A.

Electroluminescence behavior of ZnO/Si heterojunctions: Energy band alignment and interfacial microstructure

n-ZnO/p-Si heterojunction light-emitting diodes (LEDs) show weak defect-related electroluminescence (EL). In order to analyze the origin of the weak EL, the energy band alignment and interfacial microstructure of ZnO/Si heterojunction are investigated by x-ray photoelectron spectroscopy. The valence band offset (VBO) is determined to be 3.15 +/- 0.15 eV and conduction band offset is -0.90 +/- 0.15 eV, showing a type-II band alignment. The higher VBO means a high potential barrier for holes injected from Si into ZnO, and hence, charge carrier recombination takes place mainly on the Si side rather than the ZnO layer. It is also found that a 2.1 nm thick SiOx interfacial layer is formed at the ZnO/Si interface. The unavoidable SiOx interfacial layer provides to a large number of nonradiative centers at the ZnO/Si interface and gives rise to poor crystallinity in the ZnO films. The weak EL from the n-ZnO/p-Si LEDs can be ascribed to the high ZnO/Si VBO and existence of the SiOx interfacial layer.

Investigation of Interfacial Tensions for Carbon Dioxide Aqueous Solutions by Perturbed-Chain Statistical Associating Fluid Theory Combined with Density-Gradient Theory

The perturbed-chain statistical associating fluid theory and density-gradient theory are used to construct an equation of state (EOS) applicable for the phase behaviors of carbon dioxide aqueous solutions. With the molecular parameters and influence parameters respectively regressed from bulk properties and surface tensions of pure fluids as input, both the bulk and interfacial properties of carbon dioxide aqueous solutions are satisfactorily correlated by adjusting the binary interaction parameter (k(ij)). Our results show that the constructed EOS is able to describe the interfacial properties of carbon dioxide aqueous solutions in a wide temperature range, and illustrate the influences of temperature, pressure, and densities in each phase on the interfacial properties.

Phase equilibria and plate-fluid interfacial tensions for associating hard sphere fluids confined in slit pores

The excess Helmholtz free energy functional for associating hard sphere fluid is formulated by using a modified fundamental measure theory [Y. X. Yu and J. Z. Wu, J. Chem. Phys. 117, 10156 (2002)]. Within the framework of density functional theory, the thermodynamic properties including phase equilibria for both molecules and monomers, equilibrium plate-fluid interfacial tensions and isotherms of excess adsorption, average molecule density, average monomer density, and plate-fluid interfacial tension for four-site associating hard sphere fluids confined in slit pores are investigated. The phase equilibria inside the hard slit pores and attractive slit pores are determined according to the requirement that temperature, chemical potential, and grand potential in coexistence phases should be equal and the plate-fluid interfacial tensions at equilibrium states are predicted consequently. The influences of association energy, fluid-solid interaction, and pore width on phase equilibria and equilibrium plate-fluid interfacial tensions are discussed.

Fluorescence pH probe based on microstructured polymer optical fiber

A kind of optical pH sensor was demonstrated that is based on a pH-sensitive fluorescence dye-doped (eosin) cellulose acetate (CA) thin-film modified microstructured polymer optical fiber (MPOF). It was obtained by directly inhaling an eosin-CA-acetic acid mixed solution into array holes in a MPOF and then removing the solvent (acetic acid). The sensing film showed different fluorescence intensities to different pH solutions in a pH range of 2.5-4.5. Furthermore, the pH response range could be tailored through doping a surfactant, hexadecyl trimethyl ammonium bromide (CTAB), in the sensing film. (c) 2007 Optical Society of America.

不同pH值缓冲液处理下蚕豆叶片相对含水量、脯氨酸及丙二醛含量的变化

研究了外源pH缓冲液处理下,离体和整株蚕豆叶片相对含水量、脯氨酸含量和丙二醛含量的变化。结果表明,酸碱处理离体蚕豆叶片10 min和30 min后,叶片组织相对含水量在pH 6.5时最高;酸性处理下的叶片脯氨酸含量较高;pH 5.0时丙二醛含量较高。整株蚕豆叶片处理5 h的叶片组织相对含水量在pH 6.5时最高,处理12 h以pH 5.0时最高;pH 5.5处理5 h叶片脯氨酸含量最高,处理12 h脯氨酸含量的变化不大;处理5 h时丙二醛含量的变化随pH的降低略有下降,但处理12 h丙二醛含量的变化不大。

黄土高原小流域土壤pH、阳离子交换量和有机质分布特征

通过野外调查采样和室内分析,研究了黄土高原小流域土壤pH、阳离子交换量(cat-ion exchange capacity,CEC)和有机质的分布特征及其与土地利用方式、地形条件和土壤类型的关系.结果表明:黄土高原小流域土壤pH、CEC和有机质分别介于7.7~8.6、11.9~28.7cmol.kg-1和3.0~27.9 g.kg-1,分别服从正态分布、对数正态分布和负二项分布.3种土壤性质随地形、土地利用方式和土壤类型的不同差异很大.不同土地利用方式下,土壤有机质和CEC以林地、草地和农田较高,果园较低;pH则以林地较低,其他利用方式较高;不同地形条件下,3种土壤性质均呈塬面和坡地大于沟道和梯田的趋势;不同类型土壤中,有机质和CEC以黑垆土和红土较高,pH则以黄绵土较高.整体上,土壤有机质和CEC呈现出相似的变化趋势,而pH的分布特征则与之相反

不同pH缓冲液处理下蚕豆幼苗叶片SOD、POD和CAT活性的变化

利用不同pH值的酸碱溶液处理蚕豆或者离体蚕豆叶片,研究酸碱胁迫下蚕豆叶片保护酶活性的变化。结果表明,离体蚕豆叶片处理10 min和30 min的SOD活性相差不大,整株处理5 h的蚕豆叶片SOD活性远大于处理12 h的SOD活性;离体蚕豆叶片和整株蚕豆处理,较长时间处理下的CAT活性基本上高于短时间处理的CAT活性,短时间处理下(10 min、5 h)POD活性均显著低于对照值,较长时间处理(30 min、12h)下POD活性变化的规律性不强,且变化幅度较小。

黄土沟壑区小流域土壤pH值的空间分布及条件模拟

土壤pH值是影响土壤养分有效性和化学物质在土壤中行为的主要因素,研究土壤pH值的空间分布特征对于土壤养分管理和土壤污染预测具有重要意义。该文用地统计学方法研究了环境因素复杂的黄土高原小流域土壤pH值空间分布特征。结果表明,黄土沟壑区小流域土壤pH值具有球形—指数套合模型的空间结构特征,其空间异质性主要来源于流域内土地利用和土壤侵蚀等随机因素。与有机质协同的Kriging法能较好地对土壤pH值进行估值,其估值范围小于实测数据,估值误差来源于复杂的环境因素。序贯高斯条件模拟的土壤pH值范围与实测数据接近,模拟的平均值低于实测数据,模拟误差来源于模拟过程中独特的Kriging算法及高斯特性。