Switching performance of epitaxially grown normally-off 4H-SiC JFET

Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction field effect transistor (JFET) is investigated. Typical on-state resistance Ron was 6-10mΩcm2 at VGS = 2.5V and the breakdown voltage between the range of 1.5-1.8kV was realized at VGS = -5V for normally-off like JFETs. It was found that the turn-on energy delivers the biggest part of the switching losses. The dependence of switching losses from gate resistor is nearly linear, suggesting that changing the gate resistor, a way similar to Si-IGBT technology, can easily control di/dt and dv/dt. Turn-on losses at 200°C are lower compared to those at 25°C, which indicates the influence of the high internal p-type gate layer resistance. Inductive switching numerical analysis suggested the strong influence of channel doping conditions on the turn-on switching performance. The fast switching normally-off JFET devices require heavily doped narrow JFET channel design. © (2009) Trans Tech Publications, Switzerland.

Capacitive nanoelectromechanical switch based on suspended carbon nanotube array

We present the fabrication and high frequency characterization of a capacitive nanoelectromechanical system (NEMS) switch using a dense array of horizontally aligned single-wall carbon nanotubes (CNTs). The nanotubes are directly grown onto metal layers with prepatterned catalysts with horizontal alignment in the gas flow direction. Subsequent wetting-induced compaction by isopropanol increases the nanotube density by one order of magnitude. The actuation voltage of 6 V is low for a NEMS device, and corresponds to CNT arrays with an equivalent Young's modulus of 4.5-8.5 GPa, and resistivity of under 0.0077 Ω·cm. The high frequency characterization shows an isolation of -10 dB at 5 GHz. © 2010 American Institute of Physics.

Semi-analytic slope delay model for CMOS switch-level timing verification

A novel slope delay model for CMOS switch-level timing verification is presented. It differs from conventional methods in being semianalytic in character. The model assumes that all input waveforms are trapezoidal in overall shape, but that they vary in their slope. This simplification is quite reasonable and does not seriously affect precision, but it facilitates rapid solution. The model divides the stages in a switch-level circuit into two types. One corresponds to the logic gates, and the other corresponds to logic gates with pass transistors connected to their outputs. Semianalytic modeling for both cases is discussed.

Switch-level timing verification for CMOS circuits. A semianalytic approach

The paper describes a semianalytic slope delay model for CMOS switch-level timing verification. It is characterised by classification of the effects of the input slope, internal size and load capacitance of a logic gate on delay time, and then the use of a series of carefully chosen analytic functions to estimate delay times under different circumstances. In the field of VLSI analysis, this model achieves improvements in speed and accuracy compared with conventional approaches to transistor-level and switch-level simulation.

Free-Space Interconnect for Optical Switch and Analogue Neural Network

In this paper, the architecture of a vector-matrix multiplier (MVM) is simulated. The optical design can be made compact by the use of GRIN lenses for the optical fan-in. The intended application area was in storage area networks (SANs) but the concept can be applied to a neural network. © 2011 Allerton Press, Inc.

Optimization Of Off-Null Ellipsometry For Air/Solid Interfaces

The optimization of off-null ellipsometry is described with emphasis on the improvement of sample thickness sensitivity. Optimal conditions are dependent on azimuth angle settings of the polarizer, compensator, and analyzer in a polarizer-compensator-sample-analyzer ellipsometer arrangement. Numerical simulation utilized offers an approach to present the dependence of the sensitivity on the azimuth angle settings, from which optimal settings corresponding to the best sensitivity are derived. For a series of samples of SiO2 layer (thickness in the range of 1.8-6.5 nm) on silicon substrate, the theory analysis proves that sensitivity at the optimal settings is increased 20 times compared to that at null settings used in most works, and the relationship between intensity and thickness is simplified as a linear type instead of the original nonlinear type, with the relative error reduced to similar to 1/100 at the optimal settings. Furthermore the discussion has been extended toward other factors affecting the sensitivity of the practical system, such as the linear dynamic range of the detector, the signal-to-noise ratio and the intensity from the light source, etc. Experimental results from the investigation Of SiO2 layer on silicon substrate are chosen to verify the optimization. (c) 2007 Optical Society of America.

Pull-In Instability Of Micro-Switch Actuators: Model Review

The existing three widely used pull-in theoretical models (i.e., one-dimensional lumped model, linear supposition model and planar model) are compared with the nonlinear beam mode in this paper by considering both cantilever and fixed-fixed type micro and nano-switches. It is found that the error of the pull-in parameters between one-dimensional lumped model and the nonlinear beam model is large because the denominator of the electrostatic force is minimal when the electrostatic force is computed at the maximum deflection along the beam. Since both the linear superposition model and the slender planar model consider the variation of electrostatic force with the beam's deflection, these two models not only are of the same type but also own little error of the pull-in parameters with the nonlinear beam model, the error brought by these two models attributes to that the boundary conditions are not completely satisfied when computing the numerical integration of the deflection.

Reconstructing The Vertical Distribution Of The Aeolian Saltation Mass Flux Based On The Probability Distribution Of Lift-Off Velocity

The probability distribution of lift-off velocity of the saltating grains is a bridge to linking microscopic and macroscopic research of aeolian sand transport. The lift-off parameters of saltating grains (i.e., the horizontal and vertical lift-off velocities, resultant lift-off velocity, and lift-off angle) in a wind tunnel are measured by using a Phase Doppler Particle Analyzer (PDPA). The experimental results show that the probability distribution of horizontal lift-off velocity of saltating particles on a bed surface is a normal function, and that of vertical lift-off velocity is an exponential function. The probability distribution of resultant lift-off velocity of saltating grains can be expressed as a log-normal function, and that of lift-off angle complies with an exponential function. A numerical model for the vertical distribution of aeolian mass flux based on the probability distribution of lift-off velocity is established. The simulation gives a sand mass flux distribution which is consistent with the field data of Namikas (Namikas, S.L., 2003. Field measurement and numerical modelling of acolian mass flux distributions on a sandy beach, Sedimentology 50, 303-326). Therefore, these findings are helpful to further understand the probability characteristics of lift-off grains in aeolian sand transport. (c) 2007 Elsevier B.V. All rights reserved.