Influence of composition on the structure, electric and magnetic properties of Pd-Mn-P and Pd-Co-P amorphous alloys

The influence of composition on the structure and on the electric and magnetic properties of amorphous Pd-Mn-P and Pd-Co-P prepared by rapid quenching techniques were investigated in terms of (1) the 3d band filling of the first transition metal group, (2) the phosphorus concentration effect which acts as an electron donor and (3) the transition metal concentration.

The structure is essentially characterized by a set of polyhedra subunits essentially inverse to the packing of hard spheres in real space. Examination of computer generated distribution functions using Monte Carlo random statistical distribution of these polyhedra entities demonstrated tile reproducibility of the experimentally calculated atomic distribution function. As a result, several possible "structural parameters" are proposed such as: the number of nearest neighbors, the metal-to-metal distance, the degree of short-range order and the affinity between metal-metal and metal-metalloid. It is shown that the degree of disorder increases from Ni to Mn. Similar behavior is observed with increase in the phosphorus concentration.

The magnetic properties of Pd-Co-P alloys show that they are ferromagnetic with a Curie temperature between 272 and 399°K as the cobalt concentration increases from 15 to 50 at.%. Below 20 at.% Co the short-range exchange interactions which produce the ferromagnetism are unable to establish a long-range magnetic order and a peak in the magnetization shows up at the lowest temperature range . The electric resistivity measurements were performed from liquid helium temperatures up to the vicinity of the melting point (900°K). The thermomagnetic analysis was carried out under an applied field of 6.0 kOe. The electrical resistivity of Pd-Co-P shows the coexistence of a Kondo-like minimum with ferromagnetism. The minimum becomes less important as the transition metal concentration increases and the coefficients of ℓn T and T^2 become smaller and strongly temperature dependent. The negative magnetoresistivity is a strong indication of the existence of localized moment.

The temperature coefficient of resistivity which is positive for Pd- Fe-P, Pd-Ni-P, and Pd-Co-P becomes negative for Pd-Mn-P. It is possible to account for the negative temperature dependence by the localized spin fluctuation model and the high density of states at the Fermi energy which becomes maximum between Mn and Cr. The magnetization curves for Pd-Mn-P are typical of those resulting from the interplay of different exchange forces. The established relationship between susceptibility and resistivity confirms the localized spin fluctuation model. The magnetoresistivity of Pd-Mn-P could be interpreted in tenns of a short-range magnetic ordering that could arise from the Rudennan-Kittel type interactions.

Structure and properties of an amorphous ferromagnetic alloy

The structure and the electrical and magnetic properties of an amorphous alloy containing approximately 80 at .% iron, 13 at.% phos phorus and 7 at.% carbon (Fe_(80)Fe_(13)C_7) obtained by rapid quenching from the liquid state have been studied. Transmission electron diffraction data confirm the amorphous nature of this alloy. An analysis of the radial distribution function obtained from X-ray diffraction data indicates that the number of nearest neighbors is approximately seven, at a distance of 2.6A. The structure of the alloy can be related to that of silicate glasses and is based on a random arrangement of trigonal prisms of Fe_2P and Fe_3C types in which the iron atoms have an average ligancy of seven. Electrical resistance measurements show that the alloys are metallic. A minimum in the electrical resistivity vs. temperature curve is observed between 10° K to 50° K depending on the specimen, and the temperature at which the minimum occurs is related to the degree of local ordering. The Fe-P-C amorphous alloys are ferromagnetic. The Curie temperature measured by the induction method and by Mossbauer spectroscopy is 315° C. The field dependence of the magneto-resistance at temperatures from liquid helium to room temperature is similar to that found in crystalline iron. The ordinary Hall coefficient is approximately 10^(-11) volt-cm/amp-G. The spontaneous Hall coefficient is about 0.6 x 10^(-9) volt-cm/amp-G and is practically independent of temperature from liquid helium temperature up to 300° c.

Ultrafast sputtered ZnO thin films with high kT for acousticwave device applications

The fabrication of high frequency acoustic wave devices requires thedevelopment of thin films of piezoelectric materials with improved morphologicaland electro-acoustical properties. In particular, the crystalline orientationof the films, surface morphology, film stress and electrical resistivity are keyissues for the piezoelectric response. In the work reported here, ZnO thinfilms were deposited at high rates (>50 nm/min) using a novel process knownas the High Target Utilisation Sputtering (HiTUS). The films deposited possessexcellent crystallographic orientation, high resistivity (>109ωm), and exhibit surface roughness and film stress one order of magnitudelower than films grown with standard magnetron sputtering. The electromechanicalcoupling coefficient of the films, kT, was precisely calculated byimplementing the resonant spectrum method, and was found to be at least 6%higher than any previously reported kT of magnetron sputtered filmsto the Authors' knowledge. The low film stress of the film is deemed as one ofthe most important factors responsible for the high k T valueobtained. © 2010 IEEE.

Low temperature (< 100 °c) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu2O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu2O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu2O films are reported. It is known from previously published work that the formation of pure Cu2O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu2O thin films (as opposed to CuO or mixed phase CuO/Cu2O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu2O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu2O films with electrical resistivity ranging from 102 to 104 Ω-cm, hole mobility of 1-10 cm2/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu 2O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu2O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells. © 2011 Elsevier B.V. All rights reserved.

The influence of a grain boundary on the thermal transport properties of bulk, melt-processed Y-Ba-Cu-O

We report the dependence of thermal conductivity, thermoelectric power and electrical resistivity on temperature for a bulk, large grain melt-processed Y-Ba-Cu-O (YBCO) high temperature superconductor (HTS) containing two grains separated by a well-defined grain boundary. Transport measurements at temperatures between 10 and 300 K were carried out both within one single grain (intra-granular properties) and across the grain boundary (inter-granular properties). The influence of an applied external magnetic field of up to 8 T on the measured sample properties was also investigated. The presence of the grain boundary is found to affect strongly the electrical resistivity of the melt-processed bulk sample, but has almost no effect on its thermoelectric power and thermal conductivity, within experimental error. The results of this study provide direct evidence that the heat flow in multi-granular melt-processed YBCO bulk samples should be virtually unaffected by the presence of grain boundaries in the material. © 2013 IOP Publishing Ltd.

Magneto transport characterization of the Sn-doped TbMnO3 manganites

The structural, magnetic and electrical transport properties of the Sn-doped TbMnO3 manganites are studied by X-ray diffraction, ac susceptibility, dc magnetization and electrical resistivity measurements. The Sn doping into the Tb and Mn sites of TbMnO3 compresses the unit cell and changes parameters of the antiferromagnetic phase whereas the magnetic moment of Mn are only weakly affected. The electrical resistivity of doped manganites is reduced and the activation energy EA is determined for the thermally activated conduction. © 2007 Elsevier B.V. All rights reserved.

Spin glass behaviour and spin-dependent scattering in la 0.7Ca 0.3Mn 0.9Cr 0.1O 3 perovskites

The magnetic, electrical and thermal transport properties of the perovskite La 0.7Ca 0.3Mn 0.9Cr 0.1O 3 have been investigated by measuring dc magnetization, ac susceptibility, the magnetoresistance and thermal conductivity in the temperature range of 5-300K. The spin glass behaviour with a spin freezing temperature of 70 K has been well confirmed for this compound, which demonstrates the coexistence and competition between ferromagnetic and antiferromagnetic clusters by the introduction of Cr. Colossal magnetoresistance has been observed over the temperature range investigated. The introduction of Cr causes the "double-bump" feature in electrical resistivity ρ(T). Anomalies on the susceptibility and the thermal conductivity associated with the double-bumps in ρ(T) are observed simultaneously. The imaginary part of ac susceptibility shows a sharp peak at the temperature of insulating-metallic transition where the first resistivity bump was observed, but it is a deep-set valley near the temperature where the second bump in ρ(T) emerges. The thermal conductivity shows an increase below the temperature of the insulating-metallic transition, but the phonon scattering is enhanced accompanying the appearance of the second peak of double-bumps in ρ(T). We relate those observed in magnetic and transport properties of La 0.7Ca 0.3Mn 0.9Cr 0.1O 3 to the spin-dependent scattering. The results reveal that the spin-phonon interaction may be of more significance than the electron (charge)-phonon interaction in the mixed perovskite system. © 2005 Chinese Physical Society and IOP Publishing Ltd.

Magnetotransport study of MgB2 superconductor

Precise magnetotransport studies of heat and charge carriers in polycrystalline MgB2 show that magnetic fields up to 8 T remarkably influence electrical resistivity, thermoelectric power and thermal conductivity. The superconducting transition temperature shifts from 39 K to 19 K at 8 T as observed on electric signals. The temperature transition width is weakly broadened. Electron and phonon contributions to the thermal conductivity are separated and discussed. The Debye temperature calculated from a phonon drag thermoelectric power component is inconsistent with values derived through other effects.

Magneto-transport study of Nb-doped Bi/Pb2223 superconductor

The magneto-transport properties of Bi1.5Pb0.4Nb0.1Sr2Ca2Cu 3O10-x polycrystalline, superconducting ceramic are reported. The material was found to be chemically homogeneous and partially textured. The mixed state properties were investigated by measuring the electrical resistivity, longitudinal and transverse (Nernst effect) thermoelectric power, and thermal conductivity. The magnetization and AC susceptibility measurements were also performed. The variation of these characteristics for magnetic fields up to 5 T are discussed and compared to those of the zero field case. The transport entropy and thermal Hall angle are extracted and quantitatively compared to previously reported data of closely related systems. © 2003 Elsevier Science B.V. All rights reserved.

A highly conductive and transparent solution processed AZO/MWCNT nanocomposite

A solution processed aluminum-doped zinc oxide (AZO)/multi-walled carbon nanotube (MWCNT) nanocomposite thin film has been developed offering simultaneously high optical transparency and low electrical resistivity, with a conductivity figure of merit (σDC/σopt) of ~75-better than PEDOT:PSS and many graphene derivatives. The reduction in sheet resistance of thin films of pristine MWCNTs is attributed to an increase in the conduction pathways within the sol-gel derived AZO matrix and reduced inter-MWCNT contact resistance. Films have been extensively characterized by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), X-ray diffractometry (XRD), photoluminescence (PL), and ultraviolet-visible (UV-vis) spectroscopy. © 2013 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment

We studied the effects of hydrogen plasma treatment on the electrical and optical properties of ZnO films deposited by radio frequency magnetron sputtering. It is found that the ZnO H film is highly transparent with the average transmittance of 92% in the visible range. Both carrier concentration and mobility are increased after hydrogen plasma treatment, correspondingly, the resistivity of the ZnO H films achieves the order of 10(-3) cm. We suggest that the incorporated hydrogen not only passivates most of the defects and/or acceptors present, but also introduces shallow donor states such as the V-O-H complex and the interstitial hydrogen H-i. Moreover, the annealing data indicate that H-i is unstable in ZnO, while the V-O-H complex remains stable on the whole at 400 degrees C, and the latter diffuses out when the annealing temperature increases to 500 degrees C. These results make ZnO H more attractive for future applications as transparent conducting electrodes.

Mutual passivation of donors and isovalent nitrogen in GaAs

We study the mutual passivation of shallow donor and isovalent N in GaAs. We find that all the donor impurities, Si-Ga, Ge-Ga, S-As, and Se-As, bind to N in GaAsN, which has a large N-induced band-gap reduction relative to GaAs. For a group-IV impurity such as Si, the formation of the nearest-neighbor Si-Ga-N-As defect complex creates a deep donor level below the conduction band minimum (CBM). The coupling between this defect level with the CBM pushes the CBM upwards, thus restoring the GaAs band gap; the lowering of the defect level relative to the isolated Si-Ga shallow donor level is responsible for the increased electrical resistivity. Therefore, Si and N mutually passivate each other's electrical and optical activities in GaAs. For a group-VI shallow donor such as S, the binding between S-As and N-As does not form a direct bond; therefore, no mutual passivation exists in the GaAs(S+N) system.

Relationship between deep-level centers and stoichiometry in semi-insulating gallium arsenide

Experimental results have shown the fact that the deep-level centers in semi-insulating GaAs decrease with the improvement in stoichiometry. The electrical resistivity doubles when the concentration of EL2 centers decreases to a half. The microgravity-growth experiments also show that improved crystal stoichiometry results in a decrease of deep-level centers. (C) 1998 American Institute of Physics. [S0021-8979(98)04921-4].

RADIATIVE RECOMBINATION IN N-TYPE AND P-TYPE GAAS COMPENSATED WITH LI

We report fundamental changes of the radiative recombination in a wide range of n-type and p-type GaAs after diffusion with the group-I element Li. These optical properties are found to be a bulk property and closely related to the electrical conductivity of the samples. In the Li-doped samples the radiative recombination is characterized by emissions with excitation-dependent peak positions which shift to lower energies with increasing degree of compensation and concentration of Li. These properties are shown to be in qualitative agreement with fluctuations of the electrostatic potential in strongly compensated systems. For Li-diffusion temperatures above 700-800-degrees-C semi-insulating conditions with electrical resistivity exceeding 10(7) OMEGA cm are obtained for all conducting starting materials. In this heavy Li-doping regime, the simple model of fluctuating potentials is shown to be inadequate for explaining the. experimental observations unless the number of charged impurities is reduced through complexing with Li. For samples doped with low concentrations of Li, on the other hand, the photoluminescence properties are found to be characteristic of impurity-related emissions.

Competition between band filling and steric effect in ordered double perovskites Sr2-xLaxMnMoO6

The ordered double perovskites, Sr2-xLaxMnMoO6, were prepared by sol-gel reaction. Structural, magnetic, and electrical properties were investigated for a series of ordered double perovskites Sr2-xLaxMnMoO6(0 <= x <= 1). The compounds have a monoclinic structure (space group P2(1)/n) and the cell volume expands monotonically with La doping. The T-C and the magnetic moment rise and the cusp-like transition temperature below which the magnetic frustration occurs shifts to high temperature as x increases. With La doping, electrical resistivity of Sr2-xLaxMnMoO6 decreases only at low doping levels (x <= 0.2); while at high doping levels (0.8 <= x <= 1), electrical resistivity tends to increase greatly. The results suggest that the competition between band filling effect and steric effect coexists in the whole doping range, and the formation of ferrimagnetic interactions is not simply at the expense of antiferromagnetic interactions.