Resistência de união entre cimentos resinosos autoadesivos e cerâmicas de zircônia policristalina

O objetivo deste estudo foi avaliar a resistência de união a microtração de cimentos resinosos autoadesivos a cerâmicas de zircônia policristalina. Dezoito blocos cerâmicos de zircônia 3Y-TZP (9 LAVA e 9 LAVA Plus) foram jateados com partículas de 50 m de Al2O3por 20 s com pressão de 28 psi a uma distância de 10 mm. Os blocos cerâmicos foram duplicados em resina composta (Point 4, Kerr) por moldagem com silicone. Os blocos de resina composta foram cimentados à superfície jateada da zircônia usando três diferentes cimentos resinosos autoadesivos: (1) RelyX Unicem 2 (3M ESPE); (2) SmartCem 2 (Dentsply); (3) Speedcem (Ivoclar Vivadent). Após 24 h imersos em água destilada a 37oC, os blocos cimentados foram cortados em palitos para testes de microtração,com área da interface adesiva de 1 mm2 0,2 mm, e tensionados até a fratura. Os resultados foram analisados pelo teste de análise de variância de dois fatores e pelo teste de comparações múltiplas LSD (α=0.05). As amostras fraturadas foram analisadas com microscopia eletrônica de varredura (MEV) e o modo de falha foi registrado. A topografia das superfícies cerâmicas antes e após o jateamento foi comparada por microscopia de força atômica (AFM). A resistência de união do cimento Speedcem à zircônia foi estatisticamente superior àquela reportada pelos cimentos RelyX Unicem 2 e SmartCem 2, independentemente da cerâmica usada (p<0,05). O fator cerâmica não teve influência estatística na resistência de união. A interação entre os dois fatores se mostrou significativa (p<0,05). O modo de fratura associado ao SmartCem 2 foi quase exclusivamente adesiva, enquanto oRelyX Unicem 2e o Speedcem exibiram um maior percentual de falhas mistas. Não foram observadas falhas coesivas. O AFM não revelou diferença no padrão de topografia de superfície entre as duas cerâmicas antes ou após o jateamento. Concluiu-se que o cimento Speedcem foi superior na adesão a cerâmicas de zircônia policristalina.

松杉类植物花粉发育和传粉生物学的研究

本文用光学显微镜结合荧光技术对青扦花粉的发育过程进行了观察;用共聚焦显微镜观察了白扦生长花粉管细胞内的游离Ca2+分布;利用原子力显微镜对雪松和水杉花粉外壁的亚结构进行了研究：用透射电镜、扫描电镜及解剖镜等技术研究了侧柏、北美香柏、红豆杉、粗榧和白皮松的传粉机制，结果如下。 青扦花粉的发育过程与松科其它一些植物花粉的发育模式相似。从小孢子母细胞到成熟花粉约二十天左右。小孢子母细胞进入减数分裂前彼此分开，但在某些部位仍有连接。细胞质内有大量淀粉粒，在减数分裂过程中减少或消失，没有观察到明显的淀粉粒带。减数分裂中的胞质分裂为同时型，四分体为四面体型。小孢子刚从四分体释放出来时，气囊已开始形成，细胞中含大量淀粉粒。随着小孢子的发育，其体积增大，并出现液泡，细胞核移向一侧。小孢子第一次不对称分裂产生一个大的中央细胞和一个小的原叶细胞。中央细胞不久就进行第二次分裂产生精子器原始细胞和第二原叶细胞。原叶细胞形成后，其与中央细胞或精子器原始细胞之间的壁逐渐沉积胼胝质，以后随着原叶细胞的退化，胼胝质壁消失。精子器原始细胞分裂形成管细胞和生殖细胞，生殖细胞在散粉前分裂形成体细胞（精原细胞）和柄细胞（不育细胞）。成熟花粉为5细胞，但两个原叶细胞已退化消失。 白扦花粉在10%蔗糖+0.01%硼酸的液体培养基内培养12小时后开始萌发。在正常生长的花粉管中，其顶端有一个透明区，而透明区后则含有大量的贮藏物质颗粒。在停止生长的花粉管中透明区消失，而整个花粉管顶端也被储藏物质颗粒充满。正常生长的花粉管顶端有一个较高的Ca2+浓度。在停止生长的花粉管内不具有这样一个Ca2+梯度。 雪松和水杉二种花粉外壁中由孢粉素构成的亚结构单位形态相似，均呈颗粒状，但大小略有不同。雪松的长56-99 nm，宽42-74;水杉的长81-118 nm，宽43-98 nm。在雪松中这些亚单位紧密排列组成短棒状或球状的花粉外壁结构单位，再由几个到十几个这样的结构单位组成较大的岛屿状结构。在这些岛屿状结构之间有大小不一的空隙存在，整个花粉外壁由这样一些岛屿状结构交互连接形成。水杉花粉外壁的亚单位排列也较紧密，且有3-10个成群分布的趋势，但各群之间界限不明显。此外，雪松和水杉的花粉外壁亚单位均无螺旋状排列趋势，这一结果倾向于支持Southworth关于花粉外壁亚单位颗粒状并呈网状排列的观点。 白皮松胚珠倒生，其发育过程与松属的其它种相似，成熟胚珠珠孔端具两手臂状结构，有利于接收花粉。花粉具气囊。传粉期间，没有观察到传粉滴产生，但珠心顶端细胞解体形成花粉室。花粉室内可接受一至几个花粉，花粉在花粉室内的位置无明方向性。传粉时，胚珠处于大孢子线细胞时期。花粉在花粉室内萌发形成花粉管进入珠心组织，花粉管在珠心内生长一段时间后停止生长，并于次年春天重新启动生长。离体生长的花粉管顶端常有胼胝质产生，但顶端区域后的花粉管壁上却无胼胝质沉积。 侧柏、北美香柏、红豆杉和粗榧均为直生胚珠。传粉时胚珠产生传粉滴。在红豆杉胚珠发育早期，珠心表面细胞轮廓清晰;而在后期，其珠心表面则形成了一层膜状结构。这层膜状结构在传粉前随珠心细胞的解体而破裂，珠心细胞的降解产物参与了传粉滴形成。在传粉前和传粉期，珠心细胞内含大量的线粒体、内质网、高尔基体和小泡。传粉滴主要由珠心细胞分泌形成。这四种植物的花粉均无气囊，属可湿性花粉。红豆杉和粗榧的花粉水合时，内壁膨胀，外壁开裂。通常情况下，红豆杉花粉的外壁保留在传粉滴的表面，而花粉的其它部分沉入传粉滴内。侧柏和北美香柏的传粉滴授粉后，花粉进入传粉滴导致传粉滴的明显收缩。在侧柏中传粉滴授粉后100分钟内就完全收缩进入珠孔。传粉滴收缩的速率与所授花粉数量和花粉的种类有关。与侧柏亲缘关系较近植物花粉引起传粉滴的收缩速率和侧柏自身花粉引起的传粉滴收缩速率相似;反之，收缩速率变慢。侧柏传粉滴的收缩可能主要是由于花粉减弱胚珠分泌的结果。但授粉不引起红豆杉和粗榧传粉滴的明显收缩。在红豆杉和粗榧中，从授粉到传粉完全收缩需要20-24小时。这两种植物传粉滴的收缩可能主要是蒸发引起的非代谢性过程，与侧柏和美香柏属于不同的传粉滴收缩机制。

Measurement of forces during the modification of C60 islands

A UHV atomic force microscope with a conducting tip is used to measure the tip-sample conductance as a function of the applied force on well-ordered, monolayer islands of C60 on Cu(111). By imaging the sample before and after each force-distance experiment, it was possible to investigate the forces required for the removal of individual C60 molecules from the islands. The removal of C60 occurs near defects or edges of the C60 islands and requires an applied force of 5-20 nN, which corresponds to applied pressures of order 1 GPa. In addition, it was possible to investigate the strength of the C60 film on the molecular scale. It was found that the mechanical stiffness of a C60 molecule is of order 6 N/m and the islands appear to undergo a reversible yield process at an applied pressure of around 1.2 GPa.

Electroless-plated gold films for sensitive surface plasmon resonance detection of white spot syndrome virus

The paper describes the rapid and label-free detection of the white spot syndrome virus (WSSV) using a surface plasmon resonance (SPR) device based on gold films prepared by electroless plating. The plating condition for obtaining films suitable for SPR measurements was optimized. Gold nanoparticles adsorbed on glass slides were characterized by transmission electron microscopy (TEM). Detection of the WSSV was performed through the binding between WSSV in solution and the anti-WSSV single chain variable fragment (scFv antibody) preimmobilized onto the sensor surface. Morphologies of the as-prepared gold films, gold films modified with self-assembled alkanethiol monolayers, and films covered with antibody were examined using an atomic force microscope (AFM). To demonstrate the viability of the method for real sample analysis, WSSV of different concentrations present in a shrimp hemolymph matrix was determined upon optimizing the surface density of the antibody molecules. The SPR device based on the electroless-plated gold films is capable of detecting concentration of WSSV as low as 2.5 ng/mL in 2% shrimp hemolymph, which is one to two orders of magnitude lower than the level measurable by enzyme-linked immunosorbant assays. (c) 2007 Elsevier B.V. All rights reserved.

High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth

We develop a modified two-step method of growing high-density and narrow size-distribution InAs/GaAs quantum dots (QDs) by molecular beam epitaxy. In the first step, high-density small InAs QDs are formed by optimizing the continuous deposition amount. In the second step, deposition is carried out with a long growth interruption for every 0.1 InAs monolayer. Atomic force microscope images show that the high-density (similar to 5.9x 10(10) CM-2) good size-uniformity InAs QDs are achieved. The strong intensity and narrow linewidth (27.7 meV) of the photoluminescence spectrum show that the QDs grown in this two-step method have a good optical quality.

Photoluminescence investigation of InAs bimodal self-assembled quantum dots state filling

Self-assembled InAs quantum dots were prepared on GaAS(100)) substrate in a solid source molecular beam epitaxy system The distribution and topographic images of uncapped dots were studied by atomic force microscope. The statistical result shows that the quantum dots are bimodal distribution. The photoluminescence spectrum results shows that the intensity of small size quantum dots dominated, which may be due to: (1) the state density of large quantum dots lower than that of small quantum dots; (2) the carriers capture rate of large size quantum dots is small relative to that of small ones; (3) there is a large strain barrier between large quantum dots and capping layer, and the large strain is likely to produce the defect and dislocation, resulting in a probability carriers transferring from large quantum dots to small dots that is very small with temperature increasing.

Formation of ferromagnetic clusters in GaAs matrix and GaAs/AlGaAs superlattice through Mn ion implantation at two different temperatures

Different submicron ferromagnets are fabricated into GaAs and GaAs/AlGaAs superlattice through ion implantation at two different temperatures followed by thermal annealing. The structural and magnetic properties of the granular film are studied by an atomic force microscope, X-ray diffraction and alternating gradient magnetometer. By analyzing the saturation magnetization M-s, remanence M-r, coercivity H-c and remanence ratio S-q, it is confirmed that both MnGa and MnAs clusters are formed in the 350degreesC-implanted samples whereas only MnAs clusters are formed in the room-temperature implanted samples. (C) 2004 Elsevier B.V. All rights reserved.

Low-temperature growth of InN by MOCVD and its characterization

Metalorganic chemical vapor deposition growth of InN on sapphire substrate has been investigated between 400 degrees C and 500 degrees C to seek the growth condition of InN buffer layer, i.e. the first step of realization of the two-step growth method. Ex situ characterization of the epilayers by means of atomic force microscope, scanning electron microscope and X-ray diffraction, coupled with in situ reflectance curves, has revealed different growth circumstances at these temperatures, and conclusion has been reached that the most suitable temperature for buffer growth is around 450 degrees C. In addition, the growth rate of InN at the optimized temperature with regard to different precursor flow rates is studied at length. (c) 2004 Elsevier B.V. All rights reserved.

Improved field emission properties from metal-coated diamond films

Diamond films were prepared by microwave plasma chemical vapor deposition (MWPCVD). In order to obtain better field emission properties, the samples coated with different metals were prepared. The results showed that the field emission properties of diamond coated with metals could be greatly improved in comparison to pure diamond film and the different kinds of coated metals have different influences on the field emission properties. The possible reasons of effects on the field emission properties are discussed, which were probably due to the reduced effective surface work function by metal coatings; but the detail of the mechanism should be studied further. The surface morphology and microstructure of the sample were characterized by Atomic Force Microscope (AFM), X-ray photoelectron spectroscopy (XPS), X-ray Diffraction (XRD) and Raman spectrum tests. (c) 2006 Elsevier B.V. All rights reserved.

Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD

The effects of Si and Mg doping on the crystalline quality and In distribution in the InGaN films were studied by atomic force microscope (AFM), triple crystal X-ray diffraction (TCXRD) and Rutherford backscattering spectrometry (RBS). The undoped, Si-doped and Mg-doped InGaN films were grown by metalorganic chemical vapor deposition (MOCVD) on (0 0 0 1) sapphire substrates. The electronic concentration in the Si-doped InGaN is about 2 x 10(19) cm(-3). It is found that the crystalline quality and In distribution in InGaN is slightly affected by the Si doping. In the Mg doped-case, the hole concentration is about 4 x 10(18) cm(-3) after annealing treatment. The surface morphology and crystalline quality of the Mg-doped InGaN are deteriorated significantly compared with the undoped InGaN. The growth rate of Mg-doped InGaN is higher than the undoped InGaN. Mg doping enhances the In incorporation in the InGaN alloy. The increase in In composition in the growth direction is more severe than the undoped InGaN. (c) 2006 Elsevier B.V. All rights reserved.

Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces

The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C on off-oriented (0001) Si faces are characterized by atomic force microscope, Nomarski optical microscopy, and Micro-Raman spectroscopy. Typical morphological defects including triangular defects, wavy steps, round pits, and groove defects are observed in mirror-like SiC epilayers. The preparation of the substrate surface is necessary for the growth of high-quality 4H-SiC epitaxial layers with low-surface defect density under optimized growth conditions. (c) 2006 Elsevier Ltd. All rights reserved.

Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires

Morphology evolution of high-index GaAs(331)A surfaces during molecular beam epitaxy (MBE) growth has been investigated in order to achieve regularly distributed step-array templates and fabricate spatially ordered low-dimensional nano-structures. Atomic force microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature. By using the step arrays formed on GaAs(331)A surfaces as the templates, we have fabricated highly ordered InGaAs nanowires. The improved homogeneity and the increased density of the InGaAs nanowires are attributed to the modulated strain field caused by vertical multi-stacking, as well as the effect of corrugated surface of the template. Photoluminescence (PL) tests confirmed remarkable polarization anisotropy.

Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells

Both cracked and crack-free GaN/Al0.55Ga0.45N multiple quantum wells (MQWs) grown on GaN template by metalorganic chemical vapor deposition have been studied by triple-axis X-ray diffraction, grazing-incidence X-ray reflectivity, atomic force microscope, photoluminescence spectroscopy and low-energy positron annihilation spectroscopy. The experimental results show that cracks generation not only deteriorates the surface morphology, but also leads to a period dispersion and roughens the interfaces of MQWs. The mean density of dislocations in MQWs, determined from the average full-width at half-maximum of to-scan of each satellite peak, has been significantly enhanced by the cracks generation. Furthermore, the measurement of annihilation-line Doppler broadening reveals a higher concentration of negatively charged vacancies in the cracked MQWs. The combination of these vacancies and the high density of edge dislocations are assumed to contribute to the highly enhanced yellow luminescence in the cracked sample. (c) 2005 Elsevier B.V. All rights reserved.

Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate

The influence of reactor pressure on GaN nucleation layer (NL) and the quality of subsequent GaN on sapphire is studied. The layers were grown by low-pressure metalorganic chemical vapor deposition (MOCVD) on c-plane sapphire substrates and investigated by in situ laser reflectometry, atomic force microscope, scanning electron microscope, X-ray diffraction and photoluminescence. With the increase of reactor pressure prior to high-temperature GaN growth, the size of GaN nuclei formed after annealing decreases, the spacing between nucleation sites increases and the coalescence of GaN nuclei is deferred. The optical and crystalline qualities of GaN epilayer were improved when NLs were deposited at high pressure. The elongated lateral overgrowth of GaN islands is responsible for the quality improvement. (C) 2003 Elsevier Science B.V. All rights reserved.

Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method

Passivation and low temperature method was carried out to grow InGaN/GaN quantum dots (QDs). Atomic force microscope observations were performed to investigate the evolution of the surface morphology of the InGaN QDs superlattices with increasing the superlattices layer number. The result shows that the size of the QDs increases with increasing superlattices layer number. The QDs height and diameter increase from 18 and 50 run for the monolayer InGaN QDs to 37 and 80 urn for the four-stacked InGaN QDs layers, respectively. This result is considered to be due to the stress field from the sub-layer dots. (C) 2003 Elsevier Science B.V. All rights reserved.