High-Frequency in Situ Optical Measurements During a Storm Event: Assessing Relationships Between Dissolved Organic Matter, Sediment Concentrations, and Hydrologic Processes

Dissolved organic matter (DOM) dynamics during storm events has received considerable attention in forested watersheds, but the extent to which storms impart rapid changes in DOM concentration and composition in highly disturbed agricultural watersheds remains poorly understood. In this study, we used identical in situ optical sensors for DOM fluorescence (FDOM) with and without filtration to continuously evaluate surface water DOM dynamics in a 415 km(2) agricultural watershed over a 4 week period containing a short-duration rainfall event. Peak turbidity preceded peak discharge by 4 h and increased by over 2 orders of magnitude, while the peak filtered FDOM lagged behind peak turbidity by 15 h. FDOM values reported using the filtered in situ fluorometer increased nearly fourfold and were highly correlated with dissolved organic carbon (DOC) concentrations (r(2) = 0.97), providing a highly resolved proxy for DOC throughout the study period. Discrete optical properties including specific UV absorbance (SUVA(254)), spectral slope (S(290-350)), and fluorescence index (FI) were also strongly correlated with in situ FDOM and indicate a shift toward aromatic, high molecular weight DOM from terrestrially derived sources during the storm. The lag of the peak in FDOM behind peak discharge presumably reflects the draining of watershed soils from natural and agricultural landscapes. Field and experimental evidence showed that unfiltered FDOM measurements underestimated filtered FDOM concentrations by up to similar to 60% at particle concentrations typical of many riverine systems during hydrologic events. Together, laboratory and in situ data provide insights into the timing and magnitude of changes in DOM quantity and quality during storm events in an agricultural watershed, and indicate the need for sample filtration in systems with moderate to high suspended sediment loads.

Multi-year high-frequency current and water quality in-situ observations at the Guadiana Estuary

High-frequency data collected continuously over a multiyear time frame are required for investigating the various agents that drive ecological and hydrodynamic processes in estuaries. Here, we present water quality and current in-situ observations from a fixed monitoring station operating from 2008 to 2014 in the lower Guadiana Estuary, southern Portugal (37°11.30' N, 7°24.67' W). The data were recorded by a multi-parametric probe providing hourly records (temperature, salinity, chlorophyll, dissolved oxygen, turbidity, and pH) at a water depth of ~1 m, and by a bottom-mounted acoustic Doppler current profiler measuring the pressure, near-bottom temperature, and flow velocity through the water column every 15 min. The time-series data, in particular the probe ones, present substantial gaps arising from equipment failure and maintenance, which are ineluctable with this type of observations in harsh environments. However, prolonged (months-long) periods of multi-parametric observations during contrasted external forcing conditions are available. The raw data are reported together with flags indicating the quality status of each record. River discharge data from two hydrographic stations located near the estuary head are also provided to support data analysis and interpretation.

Sputter optimization of AlN on diamond substrates for high frequency SAW resonators

The AlN/diamond structure is an attractive combination for SAW devices and its application at high frequencies. In this work, the synthesis of AlN thin films by reactive sputtering has been optimized on diamond substrates in order to process high frequency devices. Polished microcrystalline and as-grown nanocrystalline diamond substrates have been used to deposit AlN of different thickness under equal sputtering conditions. For the smoother substrates, the FWHM of the rocking curve of the (002) AlN peak varies from 3.8° to 2.7° with increasing power. SAW one port resonators have been fabricated on these films, whose electrical characterization (in terms of S11 parameters) is reported.

Fabrication of high frequency SAW resonators using AlN/Diamond/Si technology

The synthesis of AlN on diamond is a great challenge, not only because of the between an AlN/diamond interface, but also because of the high surface roughness of the diamond layers [8, 9]. In the case of microcrystalline diamond, the last problem was solved by polishing. However, polishing nanocrystalline diamond is not straightforward. For the diamond synthesis by CVD, silicon was used as a substrate. The diamond/Si interface presents a smoother diamond than the diamond/air interface. This paper reports on the fabrication of high frequency SAW resonators using AlN/Diamond/Si technology.

High frequency high-order Rayleigh modes in ZnO/GaAs

Strong high-order Rayleigh or Sezawa modes, in addition to the fundamental Rayleigh mode, have been observed in ZnO/GaAs(001) systems along the [110] propagation direction of GaAs. The dispersion of the different acoustic waves has been calculated and compared to the experimental data. The bandwidth and impedance matching characteristics of the multimode SAW delay lines operating at high frequencies (2.5-3.5 GHz regime) have been investigated.

Numerical analysis of axisymmetric shells by one-dimensional continuum elements suitable for high frequency excitations

Axisymmetric shells are analyzed by means of one-dimensional continuum elements by using the analogy between the bending of shells and the bending of beams on elastic foundation. The mathematical model is formulated in the frequency domain. Because the solution of the governing equations of vibration of beams are exact, the spatial discretization only depends on geometrical or material considerations. For some kind of situations, for example, for high frequency excitations, this approach may be more convenient than other conventional ones such as the finite element method.

Nanotechnology for high frequency communications: nitrides and graphene

The achievement of higher frequencies (HF) and the reduction of energy consumption, to improve sensing, communication and computation, involve the continued scaling down to the nanometer level. This scaling is enabled by of innovative device designs, improved processing technologies and assessment tools, and new material structures. In this work, we have used all these factors to demonstrate state-of-the-art HF devices in two materials with quite different electronic properties: wide semiconductor bandgap III-nitrides for resonators and power amplifiers; and graphene, a zero bandgap material expected to revolutionize low noise and HF flexible electronics. Some issues faced during their development will be discussed during the talk.

Ion correlations due to high-frequency electric field and their effect on the nonlinear plasma conductivity

The influence of a strong, high‐frequency electric field on the ion‐ion correlations in a fully ionized plasma is investigated in the limit of infinite ion mass, starting with the Bogoliubov‐Born‐Green‐Kirkwood‐Yvon hierarchy of equations; a significant departure from the thermal correlations is found. It is shown that the above effect may substantially modify earlier results on the nonlinear high‐frequency plasma conductivity.

Electrostatic plasma instabilities excited by a high‐frequency electric field

The electrostatic plasma waves excited by a uniform, alternating electric field of arbitrary intensity are studied on the basis of the Vlasov equation; their dispersion relation, which involves the determinant of either of two infinite matrices, is derived. For ω0 ≫ ωpi (ω0 being the applied frequency and ωpi the ion plasma frequency) the waves may be classified in two groups, each satisfying a simple condition; this allows writing the dispersion relation in closed form. Both groups coalesce (resonance) if (a) ω0  ≈  ωpe/r (r any integer) and (b) the wavenumber k is small. A nonoscillatory instability is found; its distinction from the DuBois‐Goldman instability and its physical origin are discussed. Conditions for its excitation (in particular, upper limits to ω0,k, and k⋅vE,vE being the field‐induced electron velocity), and simple equations for the growth rate are given off‐resonance and at ω0  ≈  ωpi. The dependence of both threshold and maximum growth rate on various parameters is discussed, and the results are compared with those of Silin and Nishikawa. The threshold at ω0  ≈  ωpi/r,r  ≠  1, is studied.

Loss model for a high frequency and low load DC/DC synchronous buck converter

This work presents a behavioral-analytical hybrid loss model for a buck converter. The model has been designed for a wide operating frequency range up to 4MHz and a low power range (below 20W). It is focused on the switching losses obtained in the power MOSFETs. Main advantages of the model are the fast calculation time and a good accuracy. It has been validated by simulation and experimentally with one Ga, power transistor and two Si MOSFETs. Results show good agreement between measurements and the model.

Hybrid behavioral-analytical loss model for a high frequency and low load DC/DC buck converter

This work presents a behavioral-analytical hybrid loss model for a buck converter. The model has been designed for a wide operating frequency range up to 4MHz and a low power range (below 20W). It is focused on the switching losses obtained in the power MOSFETs. Main advantages of the model are the fast calculation time (below 8.5 seconds) and a good accuracy, which makes this model suitable for the optimization process of the losses in the design of a converter. It has been validated by simulation and experimentally with one GaN power transistor and three Si MOSFETs. Results show good agreement between measurements and the model

High Efficiency Envelope Amplifier Using The Slow-Envelope Technique

High efficiency envelope amplifiers are demanded in EER technique for RF transmitters, which benefits low maintaining cost or long battery time. The conventional solution is a dc-dc switching converters. This dc-dc converter should operate at very high frequency to track an envelope in the MHz range to supply the power amplifier. One of the alternative circuits suitable for this application is a hybrid topology composed of a switched converter and a linear regulator in series that work together to adjust the output voltage to track the envelope with accuracy. This topology can take advantage of the reduced slew-rate technique (also called slow-envelope technique) where switching dc-dc converter provides the RF envelope with limited slew rate in order to avoid high switching frequency and high power losses, while the linear regulator performs fine adjustment in order to obtain the exact replica of the RF envelope. The combination of this control technique with this topology is proposed in this paper. Envelopes with different bandwidth will be considered to optimize the efficiency of the dc-dc converter.

Monte Carlo simulation on a system of hard cylinders at a very high packing fraction

Using the Monte Carlo method the behavior of a system of true hard cylinders has been studied. Values of the length-to-breadth ratio L/D and packing fraction η have been chosen similar to those of real nematic liquid crystals. Results include radial distribution function g(r), structure factor S(k), and orientational order parameter M. These results lead to the conclusion that the hard cylinder model may be a useful reference for real mesomorphic phases.