On the development of a mercury-free ternary aluminium anode for cathodic protection

The development of a new mercury-free ternary aluminum anode (CIFTAL) for cathodic protection of marine structures is described. The new anode demonstrated a current efficiency of 83.5% to 85.4% in a current density range of 5.6 to 166.7 mAdmˉ². The current efficiency remained practically stable at 1.4 mAdmˉ² over a test period of 300 days. The service trials of the anode on steel trawlers and aluminum (Indal M 57 S) sheathed wooden boats have shown satisfactory performance in terms of uniform dissolution, current efficiency and driving voltage. In the wake of legislations restricting the use of anodes containing mercury in an endeavor to control the mercury pollution of the near shore aquatic environment, the new anode (CIFTAL) with its stable current output and high current efficiency merits significance in marine cathodic protection.

Sleeping sites, sleeping trees, and sleep-related behaviors of black crested gibbons (Nomascus concolor jingdongensis) at Mt. Wuliang, central Yunnan, China

Data on sleep-related behaviors were collected for a group of central Yunnan black crested gibbons (Nomascus concolor jingdongensis) at Mt. Wuliang, Yunnan, China from March 2005 to April 2006. Members of the group usually formed four sleeping units (adult male and juvenile, adult female with one semi-dependent black infant, adult female with one dependent yellow infant, and subadult male) spread over different sleeping trees. Individuals or units preferred specific areas to sleep; all sleeping sites were situated in primary forest, mostly (77%) between 2,200 and 2,400 m in elevation. They tended to sleep in the tallest and thickest trees with large crowns on steep slopes and near important food patches. Factors influencing sleeping site selection were (1) tree characteristics, (2) accessibility, and (3) easy escape. Few sleeping trees were used repeatedly by the same or other members of the group. The gibbons entered the sleeping trees on average 128 min before sunset and left the sleeping trees on average 33 min after sunrise. The lag between the first and last individual entering the trees was on average 17.8 min. We suggest that sleep-related behaviors are primarily adaptations to minimize the risk of being detected by predators. Sleeping trees may be chosen to make approach and attack difficult for the predator, and to provide an easy escape route in the dark. In response to cold temperatures in a higher habitat, gibbons usually sit and huddle together during the night, and in the cold season they tend to sleep on ferns and/or orchids.

Phase separation induced by Au catalysts in ternary InGaAs nanowires.

We report a novel phase separation phenomenon observed in the growth of ternary In(x)Ga(1-x)As nanowires by metalorganic chemical vapor deposition. A spontaneous formation of core-shell nanowires is investigated by cross-sectional transmission electron microscopy, revealing the compositional complexity within the ternary nanowires. It has been found that for In(x)Ga(1-x)As nanowires high precursor flow rates generate ternary In(x)Ga(1-x)As cores with In-rich shells, while low precursor flow rates produce binary GaAs cores with ternary In(x)Ga(1-x)As shells. First-principle calculations combined with thermodynamic considerations suggest that this phenomenon is due to competitive alloying of different group-III elements with Au catalysts, and variations in elemental concentrations of group-III materials in the catalyst under different precursor flow rates. This study shows that precursor flow rates are critical factors for manipulating Au catalysts to produce nanowires of desired composition.

Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires.

We have synthesized ternary InGaAs nanowires on (111)B GaAs surfaces by metal-organic chemical vapor deposition. Au colloidal nanoparticles were employed to catalyze nanowire growth. We observed the strong influence of nanowire density on nanowire height, tapering, and base shape specific to the nanowires with high In composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Energy dispersive X-ray spectroscopy analysis together with high-resolution electron microscopy study of individual InGaAs nanowires shows large In/Ga compositional variation along the nanowire supporting the present diffusion model. Photoluminescence spectra exhibit a red shift with decreasing nanowire density due to the higher degree of In incorporation in more sparsely distributed InGaAs nanowires.

MoT - Mixture of trees probabilistic graphical model for video segmentation

We present a novel mixture of trees (MoT) graphical model for video segmentation. Each component in this mixture represents a tree structured temporal linkage between super-pixels from the first to the last frame of a video sequence. Our time-series model explicitly captures the uncertainty in temporal linkage between adjacent frames which improves segmentation accuracy. We provide a variational inference scheme for this model to estimate super-pixel labels and their confidences in nearly realtime. The efficacy of our approach is demonstrated via quantitative comparisons on the challenging SegTrack joint segmentation and tracking dataset [23].

Strain relaxation and band-gap tunability in ternary InxGa1-xN nanowires

The alloy formation enthalpy and band structure of InGaN nanowires were studied by a combined approach of the valence-force field model, Monte Carlo simulation, and density-functional theory (DFT). For both random and ground-state structures of the coherent InGaN alloy, the nanowire configuration was found to be more favorable for the strain relaxation than the bulk alloy. We proposed an analytical formula for computing the band gap of any InGaN nanowires based on the results from the screened exchange hybrid DFT calculations, which in turn reveals a better band-gap tunability in ternary InGaN nanowires than the bulk alloy.

Structural and photoluminescent properties of ternary Zn1-xCdxO crystal films grown on Si(111) substrates

The ternary Zn1-xCdxO (0less than or equal toxless than or equal to0.6) alloying films with highly c-axis orientation have been deposited on Si(111) substrates by direct current reactive magnetron sputtering method. X-ray diffraction measurement indicates that the wurtzite-type structure of ZnO can be stabilized up to nominal Cd content x similar to 0.6 without cubic CdO phase separation. The lattice parameter c of Zn1-xCdxO increases almost linearly from 5.229 Angstrom (x = 0) to 5.247 Angstrom (x = 0.6), indicating that Cd substitution takes place on the Zn lattice sites. The photoluminescence spectra of the Zn1-xCdxO thin films measured at 12 K display a substantial red shift (similar to0.3 eV) in the near-band-edges (NBEs) emission of ZnO: from 3.39 eV of ZnO to 3.00 eV of Zn0.4Cd0.6O. The direct modulation of band gap caused by Zn/Cd substitution is responsible for the red shift effect in NBE emission of ZnO. (C) 2003 Elsevier Science B.V. All rights reserved.

GaN1-xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition

GaN1-xPx ternary alloys with high P compositions were deposited on sapphire substrates by means of metal-organic chemical vapor deposition. Depth profiles of the elements indicate that the maximum P/N composition ratio is about 17% and a uniform distribution of the P atoms in the alloys is achieved. 2theta/omega XRD spectra demonstrate that the (0002) peak of the GaN1-xPx alloys shifts to smaller angle with increasing P composition. From the photoluminescence (PL) spectra, the red shifts to the bandedge emission of GaN are determined to be 73, 78, 100 and 87 meV for the GaN1-xPx alloys with the P/N composition ratios of 3%, 11%, 15% and 17%, respectively. No PL peak related to GaP is observed, indicating that the phase separation between GaN and GaP is well suppressed in our GaN1-xPx samples. (C) 2003 Elsevier Science B.V. All rights reserved.

Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys

Temperature-dependent photoluminescence measurements have been carried out in zinc-blende InGaN epilayers grown on GaAs substrates by metalorganic vapor-phase epitaxy. An anomalous temperature dependence of the peak position of the luminescence band was observed. Considering thermal activation and the transfer of excitons localized at different potential minima, we employed a model to explain the observed behavior. A good agreement between the theory and the experiment is achieved. At high temperatures, the model can be approximated to the band-tail-state emission model proposed by Eliseev et al. [Appl. Phys. Lett. 71, 569 (1997)]. (C) 2001 American Institute of Physics.

Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates

In this paper, we investigated the self-assembled quantum dots formed on (100) and (N11)B (N = 2, 3, 4, 5) InP substrates by molecular beam epitaxy (MBE). Two kinds of ternary QDs (In0.9Ga0.1As and In0.9Al0.1As QDs) are grown on the above substrates; Transmission electron microscopy (TEM) and photoluminescence (PL) results confirm QDs formation for all samples. The PL spectra reveal obvious differences in integral luminescence, peak position, full-width at half-maximum and peak shape between different oriented surfaces. Highest PL integral intensity is observed from QDs on (411)B surfaces, which shows a potential for improving the optical properties of QDs by using high-index surface. (C) 2000 Elsevier Science B.V. All rights reserved.