Community-led resettlement: From a flood-affected slum to a new society in Pune, India

This paper describes the resettlement process of a community devastated by annual floods, to newly constructed housing in Pune, India. The relocation from Kamgar Putala slum to a housing society at Hadapsar was organized by a community-led NGO partnership in 2004. The housing development was coordinated by the local NGO Shelter Associates with significant community participation. The housing has been revisited in 2010 to evaluate the sustainability of the resettlement project's delivery model via stakeholder perception. The process of organizing for resettlement after natural disaster is described along with the implementation and evaluation of the new housing nearly six years after initial occupation. The strong partnership approach overcame a series of political and financial hurdles at various stages of the relocation project. The story of resettling Kamgar Putala is detailed alongside an outline of the current political climate for an alternative slum-upgrading policy in India and Pune. The advantages of an empowered community supported by an influential local NGO demonstrate a commendable team effort which has tackled the threat of floods. The paper highlights the merits of a community-led partnership approach to housing development for achieving sustainable urban development as well as the alleviation of poverty in a developing context. © 2011 Taylor & Francis.

3 Gbit/s LED-based step index plastic optical fiber link using multilevel pulse amplitude modulation

Multilevel PAM is investigated for a LED-based SI-POF link. Using PAM-8, transmission at a record 3 Gbit/s is demonstrated for a maximum length of 25 m step index POF with offline post-receiver processing. © 2013 OSA.

Low-cost high-efficiency GaN LED on large-area si substrate

The use of large size Si substrates for epitaxy of nitride light emitting diode (LED) structures has attracted great interest because Si wafers are readily available in large diameter at low cost. In addition, such wafers are compatible with existing processing lines for the 6-inch and larger wafer sizes commonly used in the electronics industry. With the development of various methods to avoid wafer cracking and reduce the defect density, the performance of GaN-based LED and electronic devices has been greatly improved. In this paper, we review our methods of growing crack-free InGaN-GaN multiple quantum well (MQW) LED structures of high crystalline quality on Si(111) substrates. The performance of processed LED devices and its dependence on the threading dislocation density were studied. Full wafer-level LED processing using a conventional 6-inch III-V processing line is also presented, demonstrating the great advantage of using large-size Si substrates for mass production of GaN LED devices.

3 Gbit/s LED-based step index plastic optical fiber link using multilevel pulse amplitude modulation

Multilevel PAM is investigated for a LED-based SI-POF link. Using PAM-8, transmission at a record 3 Gbit/s is demonstrated for a maximum length of 25 m step index POF with offline post-receiver processing. © 2013 OSA.

Switch mode constant current LED Driver with high efficiency, high precision and wide dimming ratio

A high efficiency hard switching constant current LED driver is presented with high overall efficiency, high current precision, high LED efficacy, flicker-free and wide constant current dimming ratio. The high stable lighting source provides the best solution for office light, reading light and LCD backlight. © 2013 IEEE.

GaN基材料的生长及蓝光LED的研制

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

新型结构LED大屏显示系统的研制

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

立方相InGaN的生长及LED有源区的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaN基UV-LED材料生长和特性研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaN基LED发光效率提高方法研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

LED 在液晶显示背光源应用中的关键技术研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

AlInGaN四元合金的MOCVD生长及InGaN/AlInGaN LED器件性能研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

氮化物LED 材料生长及垂直结构器件制备技术研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaN基LED新型透明电极的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

微纳光学结构增强GaN LED出光效率研究

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-13T08:02:10Z No. of bitstreams: 1 博士毕业论文_刘宏伟.pdf: 3404178 bytes, checksum: e5e1511387570aa5c92a4cc48df47e81 (MD5)