Recomendación del alma : que humildemente suplico al reverendo sacerdote que me asista en aquella hora, se sirva leermela, si atendiendo Dios nuestro Señor unicamente a su misericordia, y no a mi ingratitud, se digna concederme (como se lo ruego) una muerte con desengaño y cabal conocimiento

Contiene: El cantico "Stabat Mater Dolorosa", etc. que reza la Iglesia a los Dolores de la Virgen / traducido por el mismo autor

La storia dell'anno MDCCXXXVII : divisa in quattro libri : Ove si espongono i maneggi del Congresso di Nimirovv ...

Mode of access: Internet.

La storia dell'anno MDCCXXXVII : divisa in quattro libri : Ove si espongono i maneggi del Congresso di Nimirovv ...

Mode of access: Internet.

Dell' historia ecclesiastica di Piacenza di Pietro Maria Campi canonico Piacentino parte prima [-terza] : nella quale si spiegano le attioni de' santi, de' beati, e de' vescoui della città di Piacenza, e l'antichissima immunità, e giurisditione di quella chiesa, con le fondationi di molti luoghi sacri, et insieme le varie donationi, e gratie riportate da' sommi pontefici, imperadori, rè, e principi, e si fà anche mentione di molte famiglie, huomini illustri, e maggiori successi d'Italia : con l'origine de' nomi de' villaggi, terre, e castella del Piacentino ... e nel fine vn' Apologia del medesimo autore per l'innocente, e santa vita del B. Gregorio papa X. Piacentino, e la vita Latina antichissima dello stesso pontefice non mai più vscita in luce ... ; Parte seconda.

Mode of access: Internet.

La protección de la niñez en la propuesta de reforma a los Arts. 11 y 14 del Código de familia, en la prohibición del matrimonio de personas del mismo sexo así nacidas como mecanismo de protección de la familia

El trabajo de investigación que se presenta, trata sobre un tema de relevancia, en el ámbito jurídico especialmente en el área de familia, teniendo éste como Objetivo general: Construir la propuesta de reforma de los arts. 11 y 14 del Código de Familia, en la prohibición del matrimonio de personas del mismo sexo así nacidas como mecanismo de protección de la familia, base de la sociedad y el desarrollo integral del niño y niña en su aspecto moral y religioso. Metodología: la investigación es teórica explicativa, la investigación tiene como población las siguientes unidades de análisis: Juez del Juzgado de Menores, representante de la Fundación Sí a la Vida, diputado de la asamblea legislativa, psicólogo, doctor en medicina general, sacerdote, homosexual, sociólogo y pastor cristiano evangélico. El método es analítico, sistemático y comparativo, la técnica es documental y de campo. Conclusiones: Existe un vacío legal en los Arts. 11 y 14 del Código de Familia, al no haber una regulación expresa en la cual se prohíba el matrimonio entre personas del mismo sexo así nacidas, es necesario definir la prohibición absoluta para la protección de la familia. Al proponer la reforma de los artículos art. 11 y 14 del Código de Familia se le da protección a la familia, ya que si se le legaliza en un futuro el matrimonio entre personas del mismo sexo así nacidas, se violentarían los arts. de la Constitución y la Ley secundaria. Si se legaliza en un futuro el matrimonio entre personas del mismo sexo así nacidas afecta el desarrollo psicológico de los menores de edad, ya que hay una distensión en el menor acerca del concepto de familia que se tiene.

A new low temperature synthesis route of fraipontite (Zn,Al)3(Si,Al)2O5(OH)4

A low temperature synthesis method based on the decomposition of urea at 90°C in water has been developed to synthesise fraipontite. This material is characterised by a basal reflection 001 at 7.44 Å. The trioctahedral nature of the fraipontite is shown by the presence of a 06l band around 1.54 Å, while a minor band around 1.51 Å indicates some cation ordering between Zn and Al resulting in Al-rich areas with a more dioctahedral nature. TEM and IR indicate that no separate kaolinite phase is present. An increase in the Al content however, did result in the formation of some SiO2 in the form of quartz. Minor impurities of carbonate salts were observed during the synthesis caused by to the formation of CO32- during the decomposition of urea.

Ordering of Ge islands on Si(001) substrates patterned by nanoindentation

Spatial organization of Ge islands, grown by physical vapor deposition, on prepatterned Si(001) substrates has been investigated. The substrates were patterned prior to Ge deposition by nanoindentation. Characterization of Ge dots is performed by atomic force microscopy and scanning electron microscopy. The nanoindents act as trapping sites, allowing ripening of Ge islands at those locations during subsequent deposition and diffusion of Ge on the surface. The results show that island ordering is intrinsically linked to the nucleation and growth at indented sites and it strongly depends on pattern parameters.

Catalyst-free growth and optical properties of vertically aligned ZnO Nanorod Arrays on Si substrates covered with thin buffer layers

Vertically aligned ZnO nanorods have been grown on silicon substrates pre-coated with thin, less than 10 nm, textured ZnO seeding layers via a vapor-solid mechanism. The ZnO seeding layers, which were essential for vertical alignment of ZnO nanorods without using any metal catalyst, were prepared by decomposing zinc acetate. The structure and the luminescence properties of the ZnO nanorods synthesized onto ZnO seeding layers were investigated and their morphologies were compared with those of single-crystalline GaN substrates and silicon substrates covered with sputtered ZnO flms. Patterning of ZnO seed layers using photolithography allowed the fabrication of patterned ZnO-nanorod arrays.

Towards a controlled growth of self-assembled nanostructures: shaping, ordering and localization in Ge/Si heteroepitaxy.

The strain-induced self-assembly of suitable semiconductor pairs is an attractive natural route to nanofabrication. To bring to fruition their full potential for actual applications, individual nanostructures need to be combined into ordered patterns in which the location of each single unit is coupled with others and the surrounding environment. Within the Ge/Si model system, we analyze a number of examples of bottom-up strategies in which the shape, positioning, and actual growth mode of epitaxial nanostructures are tailored by manipulating the intrinsic physical processes of heteroepitaxy. The possibility of controlling elastic interactions and, hence, the configuration of self-assembled quantum dots by modulating surface orientation with the miscut angle is discussed. We focus on the use of atomic steps and step bunching as natural templates for nanodot clustering. Then, we consider several different patterning techniques which allow one to harness the natural self-organization dynamics of the system, such as: scanning tunneling nanolithography, focused ion beam and nanoindentation patterning. By analyzing the evolution of the dot assembly by scanning probe microscopy, we follow the pathway which leads to lateral ordering, discussing the thermodynamic and kinetic effects involved in selective nucleation on patterned substrates.

Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates

In this paper, we fabricated Pt/tantalum oxide (Ta2O5) Schottky diodes for hydrogen sensing applications. Thin (4 nm) layer of Ta2O5 was deposited on silicon (Si) and silicon carbide (SiC) substrates by radio frequency (RF) sputtering technique. We compared the performance of these sensors at different elevated temperatures of 100 ∘C and 150 ∘C. At these temperatures, the sensor based on SiC exhibited a larger sensitivity while the sensor based on Si exhibited a faster response toward hydrogen gas. We discussed herein, the responses exhibited by the Pt/Ta2O5 based Schottky diodes demonstrated a promising potential for hydrogen sensing applications.

Driving Ge island ordering on nanostructured Si surfaces

Semiconductor epitaxial nanostructures have been recently proposed as the key building blocks of many innovative applications in materials science and technology. To bring their tremendous potential to fruition, a fine control of nanostructure size and placement is necessary. We present a detailed investigation of the self-ordering process in the prototype case of Ge/Si heteroepitaxy. Starting from a bottom-up strategy (step-bunching instabilities), our analysis moves to lithographic techniques (scanning tunneling lithography, nanomechanical stamping, focused ion beam patterning) with the aim of developing a hybrid approach in which the exogenous intervention is specifically designed to suit and harness the natural self-organization dynamics of the system.