Failure mechanisms and toughness of Al2O3 ductile-particle toughened ceramics and SiC fibre-ceramic composites

The development of high performance ceramics and ceramic composites often relies on assumptions about their behaviour during loading and at failure. A crucial influence on the mechanical properties of these materials is the degree of sub-critical cracking, which post mortem investigations cannot adequately reveal. Hence a clear picture of the dynamic micromechanisms of cracking is required if applications of fracture and damage mechanics to theoretical models is to be meaningful.

Silicon optical phase shifter based on strain induced by a piezoelectric PZT thin film

We demonstrate a silicon optical phase shifter based on photoelastic effect controlled by a piezoelectric thin film. The hysteresis behavior of the piezoelectric response shows potential application as bistable device independent of the optical intensity. © 2012 OSA.

Silicon optical phase shifter based on strain induced by a piezoelectric PZT thin film

We demonstrate a silicon optical phase shifter based on photoelastic effect controlled by a piezoelectric thin film. The hysteresis behavior of the piezoelectric response shows potential application as bistable device independent of the optical intensity. © OSA 2012.

Dielectric relaxation and giant dielectric constant of Nb-doped CaCu3Ti4O12 ceramics under dc bias voltage

CaCu3Ti(4-x)Nb(x)O(12) (x = 0, 0.01, 0.08, 0.2) ceramics were fabricated by a conventional solid-state reaction method. The ceramics showed the body-centered cubic structure without any foreign phases and the grain size decreases with Nb doping. Two Debye-type relaxations were observed for the Nb-doped samples at low frequency and high frequency, respectively. The complex electric modulus analysis revealed that the surface layer, grains and grain boundaries contributed to the dielectric constant. The low-frequency dielectric constant relative to the surface layer decreased to a minimum and then increased with the dc bias voltage at 100 Hz, which were well explained in terms of a model containing two metal oxide semiconductors in series, confirming the surface layer in the ceramics. The shift voltage V-B corresponding to the minimal capacitance increased with increase of the composition x. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Rearch on glass ceramics with negative CTE used as FBG substrate

SPIE; COS; Wuhan Municipal Government

PZT/PVDF压电复合材料的制备和性能研究

一.用压电陶瓷锆钛酸铅PZT粉末作为功能相，压电聚合物聚偏氟乙烯 PVDF作为活性（基体）相，静态热压法将PZT与PVDF粉复合，制得了不同陶瓷含量的0-3连通的复合材料薄膜样品。用FT-IR，SEM和WAXD表征复合材料：发现低PZT含量的复合材料中PVDF主要以α型结晶存在；复合材料呈现不同的网络形貌，主要为海岛型结构；70%PZT的复合材料较其它组成更均匀。复合材料的X射线衍射强度发生了变化，说明PZT与PVDF之间存在强烈的相互作用。一定电场和温度下对复合材料进行电晕极化研究，随着陶瓷含量的增加，压电性d_(33)也增加，同时材料的柔顺性降低。极化后的压电复合材料的X射线峰强度比未极化的增强，衍射角向低角度移动。二.研究PVDF相的转变。将PVDF薄膜加热到200 ℃，迅速冷到137 ℃结晶，同时施加直流电场作用于PVDF薄膜上，与未加电场的薄膜比较。用IR、X-ray衍射和DSC表征了上述PVDF薄膜，表明极化后PVDF膜的晶型由α型转为β型，β晶含量提高了23%，熔点提高。PVDF的压电性与β型晶有关，含量高，有利于压电性能的提高。电晕极化的PVDF薄膜，其压电性随着时间的流逝有所减弱，一定时间后达到稳定。研制了不同的极化设备，开发了PVDF测量血压用的传感器，探讨了微机控制电晕极化的可行性。

掺杂压电陶瓷／铁电薄膜的制备和研究

PZT陶瓷粉体的制备和研究。用溶胶一凝胶法制备了错钦酸铅Pb(Zr_(0.52)Ti_(0.48))O_3（PZT），研究了溶剂乙二醇单甲醚和水的比例对PZT的晶化温度和晶粒尺寸的影响，结果表明，随溶剂比例的增大，PZT粉体的晶化温度升高晶粒尺寸增大，当V（C_3H_9O_2）／V（H_2O）＝4.47时，不仅缩短了溶胶-凝胶过程的时间，且得到的PZT粉体晶化温度低（443℃），晶粒的粒径分布集中（60-70nm）。PZT掺杂压电陶瓷的制备和研究。用同一主族元素对PZT进行掺杂改性实验，制备了Ca-PZT，Sr-PZT，Ba-PZT三个系列的压电陶瓷体系，其中每个体系中又包含1％、3％、5％、7％、9％（10％，11%）不同的掺杂量。经过压片，蒸镀电极，极化处理后测定其由，常数，结果表明，Ba离子的半径是最适合掺杂的离子半径。PZT和PbTIO。（PT）稳定溶胶的制备。在溶胶形成过程中，通过调整溶剂乙二醇单甲醚和水的比例，并加入适当量的乙酞丙酮作稳定剂，在有水体系下制备稳定的PZT和PT溶胶前驱体。该方法省略了制备中的蒸馏过程，简化了PZT和PT稳定溶胶的制备工艺。PZT铁电薄膜的制备。用自制的溶胶进行旋涂制膜，制备了膜层厚度不同的PZT和PT-PZT薄膜，在不同的锻烧温度，锻烧时间下处理为晶态膜，并对晶态膜进行表征，证明获得了钙钦矿结构的PZT晶态膜。

Characterization of porous silicon nitride/silicon oxynitride composite ceramics produced by sol infiltration

Porous silicon nitride/silicon oxynitride composite ceramics were fabricated by silica sol infiltration of aqueous gelcasting prefabricated Si3N4 green compact. Silica was introduced by infiltration to increase the green density of specimens, so suitable properties with low shrinkage of ceramics were achieved during sintering at low temperature. Si2N2O was formed through reaction between Si3N4 and silica sol at a temperature above 1550 degrees C. Si3N4/Si2N2O composite ceramics with a low linear shrinkage of 1.3-5.7%, a superior strength of 95-180 MPa and a moderate dielectric constant of 4.0-5.0 (at 21-39 GHz) were obtained by varying infiltration cycle and sintering temperature. (C) 2010 Published by Elsevier B.V.

Critical Biot's number for Determination of the Sensitivity of Spherical Ceramics to Thermal Shock

A critical Biot number, which determines both the sensitivity of spherical ceramics to quenching and the durations of the temperature-wave propagation and the thermal stresses in the ceramics subjected to thermal shock, is theoretically obtained. The results prove that once the Biot number of a ceramic sphere is greater than the critical number, its thermal shock failure will be such a rapid process that the failure only occurs in the initial regime of heat conduction, whereas the thermal shock failure of the ceramic sphere is uncertain in the course of heat conduction. The presented results provide a guide to the selection of the ceramics applied in the thermostructural engineering with thermal shock.

Enhanced Thermal Shock Resistance of Ceramics through Biomimetically Inspired Nanofins

We propose here a new method to make ceramics insensitive to thermal shock up to their melting temperature. In this method the surface of ceramics was biomimetically roughened into nanofinned surface that creates a thin air layer enveloping the surface of the ceramics during quenching. This air layer increases the heat transfer resistance of the surface of the ceramics by about 10 000 times so that the strong thermal gradient and stresses produced by the steep temperature difference in thermal shock did not occur both on the actual surface and in the interior of the ceramics. This method effectively extends the applications of existing ceramics in the extreme thermal environments.