Evaluation of Several Carbon-Supported Nanostructured Ni-Doped Manganese Oxide Materials for the Electrochemical Reduction of Oxygen

Physical and electrochemical properties of nanostructured Ni-doped manganese oxides (MnO(x)) catalysts supported on different carbon powder substrates were investigated so as to characterize any carbon substrate effect toward the oxygen reduction reaction (ORR) kinetics in alkaline medium. These NiMnO(x)/C materials were characterized using physicochemical analyses. Small insertion of Ni atoms in the MnO(x) lattice was observed, which consists of a true doping of the manganese oxide phase. The corresponding NiMnO(x) phase is present in the form of needles or agglomerates, with crystallite sizes in the order of 1.5-6.7 nm (from x-ray diffraction analyses). Layered manganite (MnOOH) phase has been detected for the Monarch 1000-supported NiMnO(x) material, while different species of MnO(x) phases are present at the E350G and MM225 carbons. Electrochemical studies in thin porous coating active layers in the rotating ring-disk electrode setup revealed that the MnO(x) catalysts present better ORR kinetics and electrochemical stability upon Ni doping. The ORR follows the so-called peroxide mechanism on MnO(x)/C catalysts, with the occurrence of minority HO(2)(-) disproportionation reaction. The HO(2)(-) disproportionation reaction progressively increases with the Ni content in NiMnO(x) materials. The catalysts supported on the MM225 and E350G carbons promote faster disproportionation reaction, thus leading to an overall four-electron ORR pathway. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3528439] All rights reserved.

Flux Pinning Optimization of MgB(2) Bulk Samples Prepared Using High-Energy Ball Milling and Addition of TaB(2)

MgB(2) is considered to be an important conductor for applications. Optimizing flux pinning in these conductors can improve their critical currents. Doping can influence flux pinning efficiency and grain connectivity, and also affect the resistivity, upper critical field and critical temperature. This study was designed to attempt the doping of MgB(2) on the Mg sites with metal-diborides using high-energy ball milling. MgB(2) samples were prepared by milling pre-reacted MgB(2) and TaB(2) powders using a Spex 8000M mill with WC jars and balls in a nitrogen-filled glove box. The mixing concentration in (Mg(1-x)Ta(x))B(2) was up to x = 0.10. Samples were removed from the WC jars after milling times up to 4000 minutes and formed into pellets using cold isostatic pressing. The pellets were heat treated in a hot isostatic press (HIP) at 1000 degrees C under a pressure of 30 kpsi for 24 hours. The influence that milling time and TaB(2) addition had on the microstructure and the resulting superconducting properties of TaB(2)-added MgB(2) is discussed. Improvement J(c) of at high magnetic fields and of pinning could be obtained in milled samples with added TaB(2) The sample with added 5at.% TaB(2) and milled for 300 minutes showed values of J(c) similar to 7 x 10(5) A/cm(2) and F(p) similar to 14 GN/m(3) at 2T, 4.2 K. The milled and TaB(2)-mixed samples showed higher values of mu(0)H(irr) than the unmilled-unmixed sample.

Artificial Pinning Center Studies in BI2212 Tapes and Bulks With Zirconium Oxide Inclusion

Zirconium oxide inclusion in Bi2212 superconducting tapes and bulks was studied as possible artificial pinning centers (APC). In order to analyze the zirconium oxide APC addition in Bi2212 samples, magnetization measurements were performed in bulks and transport properties measurements were performed on tapes. In magnetization measurements, the critical current densities are proportional to the width of the magnetization loop at each applied magnetic field. Addition of ZrO(2) in Bi2212 superconductors broadened the magnetization loop and enhanced the critical current densities at 4.2 K in bulks, as a clear indication that ZrO(2) addition improved the pinning and acted as APCs. In contrast, the transport critical current densities decreased in tapes.

Quantification of MgO surface excess on the SnO(2) nanoparticles and relationship with nanostability and growth

In this work, we experimentally showed that the spontaneous segregation of MgO as surface excess in MgO doped SnO(2) nanoparticles plays an important role in the system`s energetics and stability. Using Xray fluorescence in specially treated samples, we quantitatively determined the fraction of MgO forming surface excess when doping SnO(2) with several different concentrations and established a relationship between this amount and the surface energy of the nanoparticles using the Gibbs approach. We concluded that the amount of Mg ions on the surface was directly related to the nanoparticles total free energy, in a sense that the dopant will always spontaneously distribute itself to minimize it if enough diffusion is provided. Because we were dealing with nanosized particles, the effect of MgO on the surface was particularly important and has a direct effect on the equilibrium particle size (nanoparticle stability), such that the lower the surface energy is, the smaller the particle sizes are, evidencing and quantifying the thermodynamic basis of using additives to control SnO(2) nanoparticles stability. (C) 2010 Elsevier B.V. All rights reserved.

Structural and magnetic properties of pure and nickel doped SnO(2) nanoparticles

Ni-doped SnO(2) nanoparticles prepared by a polymer precursor method have been characterized structurally and magnetically. Ni doping (up to 10 mol%) does not significantly affect the crystalline structure of SnO(2), but stabilizes smaller particles as the Ni content is increased. A notable solid solution regime up to similar to 3 mol% of Ni, and a Ni surface enrichment for the higher Ni contents are found. The room temperature ferromagnetism with saturation magnetization (MS) similar to 1.2 x 10(-3) emu g(-1) and coercive field (H(C)) similar to 40 Oe is determined for the undoped sample, which is associated with the exchange coupling of the spins of electrons trapped in oxygen vacancies, mainly located on the surface of the particles. This ferromagnetism is enhanced as the Ni content increases up to similar to 3 mol%, where the Ni ions are distributed in a solid solution. Above this Ni content, the ferromagnetism rapidly decays and a paramagnetic behavior is observed. This finding is assigned to the increasing segregation of Ni ions (likely formed by interstitials Ni ions and nearby substitutional sites) on the particle surface, which modifies the magnetic behavior by reducing the available oxygen vacancies and/or the free electrons and favoring paramagnetic behavior.

Light scattering in polycrystalline alumina with bi-dimensionally large surface grains

Alumina ceramics with high in-line transmittance at 0.5-1.0 mm-thickness were prepared with different doping additives by sintering at 1850 degrees C in vacuum for 1-8 h. Depending on the additive contents and sintering variables bi-dimensionally large surface grains, caused by surface evaporation of MgO, had grown parallel to the surface with similar to 100 mu m thickness and lateral sizes up to the millimeter range. The abnormal grain-growth process also resulted in the formation of pores entrapped inside the large surface grains within a narrow zone at 10-20 mu m distance from the surface. The fraction of these pores is thickness-invariant. Scattering factors associated to the pores entrapped inside the bi-dimensionally large surface grains, second-phase particles, grain-boundaries, and microstructural surface defects are derived from the results of in-line transmission (at 600 nm) and are used together with microstructural characteristics to explain the light transmittance in these materials. (C) 2008 Elsevier Ltd. All rights reserved.

Cryogenic operation of FinFETs aiming at analog applications

FinFETs are recognized as promising candidates for the CMOS nanometer era. In this paper the most recent results for cryogenic operation of FinFETs will be demonstrated with special emphasis on analog applications. Threshold voltage, subthreshold slope and carrier mobility will be studied. Also some important figures of merit for analog circuit operation as for readout electronics, such as transconductance, output conductance and intrinsic voltage gain will be covered. It is demonstrated that the threshold voltage of undoped narrow FinFETs is less temperature-dependent than for a planar single-gate device with similar doping concentration. The temperature reduction improves the transconductance over drain current ratio in any operational region. On the other hand, the output conductance is degraded when the temperature is reduced. The combination of these effects shows that the intrinsic gain of a L = 90 nm FinFET is degraded by 2 dB when the temperature reduces from 300 K to 100 K. (C) 2009 Elsevier Ltd. All rights reserved.

Threshold voltages of SOI MuGFETs

The multiple-gate field-effect transistor (MuGFET) is a device with a gate folded on different sides of the channel region. They are one of the most promising technological solutions to create high-performance ultra-scaled SOI CMOS. In this work, the behavior of the threshold voltage in double-gate, triple-gate and quadruple-gate SOI transistors with different channel doping concentrations is studied through three-dimensional numerical simulation. The results indicated that for double-gate transistors, one or two threshold voltages can be observed, depending on the channel doping concentration. However, in triple-gate and quadruple-gate it is possible to observe up to four threshold voltages due to the corner effect and the different doping concentration between the top and bottom of the Fin. (C) 2008 Elsevier Ltd. All rights reserved.

Improved generation lifetime model for the electrical characterization of single- and double-gate SOI nMOSFETs

This work proposes a refined technique for the extraction of the generation lifetime in single- and double-gate partially depleted SOI nMOSFETs. The model presented in this paper, based on the drain current switch-off transients, takes into account the influence of the laterally non-uniform channel doping, caused by the presence of the halo implanted region, and the amount of charge controlled by the drain and source junctions on the floating body effect when the channel length is reduced. The obtained results for single- gate (SG) devices are compared with two-dimensional numerical simulations and experimental data, extracted for devices fabricated in a 0.1 mu m SOI CMOS technology, showing excellent agreement. The improved model to determine the generation lifetime in double-gate (DG) devices beyond the considerations previously presented also consider the influence of the silicon layer thickness on the drain current transient. The extracted data through the improved model for DG devices were compared with measurements and two-dimensional numerical simulations of the SG devices also presenting a good adjustment with the channel length reduction and the same tendency with the silicon layer thickness variation.

Ultra-thin films of alternating semi-interpenetrating layers of a conducting polymer with thermosetting phenolic resins for sensor application

In this work a new method for crosslinking ultra-thin films with potential applications in sensor systems is proposed. The films were produced by layer-by-layer (LbL) assembly using a conducting polymer, poly(o-ethoxyaniline) (POEA), alternated with a thermosetting resin, novolac-type phenolformaldehyde (PF), crosslinked by a simple thermal treatment. The PF resin served as both alternating and crosslinking agents. The films were characterized by Fourier transform infrared (FTIR) and ultraviolet-visible (UV-Vis) spectroscopy, thermogravimetry (TG), desorption, doping/dedoping cycling and electrical measurements. The results showed that film architecture and crosslinking degree can be controlled by the conditions used for film deposition (number of bilayers, polymer concentration, pH, and deposition time), and crosslinking time. Moreover, this approach offers several advantages such as fast curing time and low cost, indicating that these films can be used to produce sensors with improved stability.

Cryogenic Operation of Junctionless Nanowire Transistors

This letter presents the properties of nMOS junctionless nanowire transistors (JNTs) under cryogenic operation. Experimental results of drain current, subthreshold slope, maximum transconductance at low electric field, and threshold voltage, as well as its variation with temperature, are presented. Unlike in classical devices, the drain current of JNTs decreases when temperature is lowered, although the maximum transconductance increases when the temperature is lowered down to 125 K. An analytical model for the threshold voltage is proposed to explain the influence of nanowire width and doping concentration on its variation with temperature. It is shown that the wider the nanowire or the lower the doping concentration, the higher the threshold voltage variation with temperature.

Development of composite adsorbents of carbon and intercalated clay for N2 and O2 adsorption: A preliminary study

Composite adsorbents of carbon and alumina intercalated montmorillonite were prepared and characterized by adsorption of N-2 and O-2 at various temperatures. The effects of pyrolysis, temperature, heating rate, subsequent degassing, and doping of cations and anions were investigated. The adsorption capacities of the composite adsorbents developed at higher temperatures (0 and -79 degrees C) are found to be larger than those of normal alumina pillared clays. The experimental results showed that the framework of these adsorbents is made of alumina particles and clay sheets while the pyrolyzed carbon distributes in the space of interlayers and interpillars. The pores between the carbon particles, clay sheets, and alumina pillars are very narrow with very strong adsorption forces, leading to enhanced adsorption capacities at 0 and -79 degrees C. The composite adsorbents exhibit features similar to those of carbonaceous adsorbents. Their pore structures, adsorption capacities, and selectivities to oxygen can be tailored by a controlled degassing procedure. Meanwhile, ions can be doped into the adsorbents to modify their adsorption properties, as usually observed for oxide adsorbents like zeolite and pillared clays. Such flexibility in pore structure tailoring is a potential advantage of the composite adsorbents developed for their adsorption and separation applications. (C) 1999 Academic Press.

Impedance characteristics of the diamond/carbon fiber electrodes for electrical double-layer capacitor

The electrochemical performance of carbon fibers (CF) and boron-doped diamond electrodes grown on carbon fiber substrate (BDD/CF) was studied. CF substrates were obtained from polyacrylonitrile precursor heat treated at two different temperatures of 1000 and 2000 degrees C to produce the desirable CF carbon graphitization index. This graphitization process influenced the CF conductivity and its chemical surface, also analyzed from X-ray photoelectron spectroscopy measurements. These three-dimensional CF structures allowed a high incorporation of diamond films compared to other carbon substrates such as glass carbon or HOPG. The electrochemical responses, from these four classes of electrodes, were evaluated focusing their application as electrical double-layer capacitors using cyclic voltammetry and impedance measurements. Cyclic voltammetry results revealed that the electrode formed from BDD grown on CF-2000 presented a typical capacitor behavior with the best rectangular shape, compared to those electrodes of CF or BDD/CF-1000. Furthermore, the BDD/CF-2000 electrode presented the lowest impedance, associated to its significant capacitance value of 1940 mu F/cm(2) taking into account the BDD films. This behavior was attributed to the strong dependence between diamond coating texture and the CF graphitization temperature. The largest surface area of BDD/CF-2000 was promoted by its singular film growth mechanism associated to the substrate chemical surface. (c) 2008 Elsevier B.V. All rights reserved.

Cerium-based phosphors: blue luminescent properties for applications in optical displays

In this paper, we describe the blue photoluminescence (PL) observed in the multi-component oxosalt phosphor GdVO(4)center dot Ce(3+). Different doping concentrations (0.25-1 mol%) and heat treatment (900-1100 degrees C) were used to evaluate which conditions would lead to the most suitable blue phosphor for optimal display performance. The cerium doping concentration influences the profile of the emission spectrum (broad peak at 412 nm under UV excitation at 330 nm), as reflected on the values of chromaticity coordinates. On the basis of luminescent properties, we can conclude that, among the phosphors prepared in this work the most adequate for a blue display is the one obtained via the combustion method using glycine as fuel, a 0.50 mol% cerium doping concentration, and heat treatment at 1000 degrees C.

Rare Earth Doped SnO(2) Nanoscaled Powders and Coatings: Enhanced Photoluminescence in Water and Waveguiding Properties

Luminescent Eu(3+) and Er(3+) doped SnO(2) powders have been prepared by Sn(4+) hydrolysis followed by a controlled growth reaction using a particle`s surface modifier in order to avoid particles aggregation. The powders so obtained doped with up to 2 mol% rare earth ions are fully redispersable in water at pH > 8 and present the cassiterite structure. Particles size range from 3 to 10 nm as determined by Photon Correlation Spectroscopy. Rare earth ions were found to be essentially incorporated into the cassiterite structure, substituting for Sn(4+), for doping concentration smaller than 0.05 mol%. For higher concentration they are also located at the particles surface. The presence of Eu(3+) ions at the surface of the particles hinder their growth and has therefore allowed the preparation of new materials consisting of water redispersable powders coated with Eu(3+)-beta dike-tonate complexes. Enhanced UV excited photoluminescence was observed in water. SnO(2) single layers with thickness up to 200 nm and multilayer coatings were spin coated on borosilicate glass substrates from the colloidal suspensions. Waveguiding properties were evaluated by the prism coupling technique. For a 0.3 mu m planar waveguide single propagating mode was observed with attenuation coefficient of 3.5 dB/cm at 632.8 nm.