All-optical logic gates with 1550nm Fabry-Perot and distributed feedback semiconductor laser amplifiers

The optical bistability occurring in laser diode amplifiers is used to design an all-optical logic gate capable to provide the whole set of logic functions. The structure of the reported logic gate is based on two connected 1550nm laser amplifiers (Fabry-Perot and distributed feedback laser amplifiers).

New laser-based approaches to improve the passivation and rear contact quality in high effiency crystalline silicon solar cells

Laser processing has been the tool of choice last years to develop improved concepts in contact formation for high efficiency crystalline silicon (c-Si) solar cells. New concepts based on standard laser fired contacts (LFC) or advanced laser doping (LD) techniques are optimal solutions for both the front and back contacts of a number of structures with growing interest in the c-Si PV industry. Nowadays, substantial efforts are underway to optimize these processes in order to be applied industrially in high efficiency concepts. However a critical issue in these devices is that, most of them, demand a very low thermal input during the fabrication sequence and a minimal damage of the structure during the laser irradiation process. Keeping these two objectives in mind, in this work we discuss the possibility of using laser-based processes to contact the rear side of silicon heterojunction (SHJ) solar cells in an approach fully compatible with the low temperature processing associated to these devices. First we discuss the possibility of using standard LFC techniques in the fabrication of SHJ cells on p-type substrates, studying in detail the effect of the laser wavelength on the contact quality. Secondly, we present an alternative strategy bearing in mind that a real challenge in the rear contact formation is to reduce the damage induced by the laser irradiation. This new approach is based on local laser doping techniques previously developed by our groups, to contact the rear side of p-type c-Si solar cells by means of laser processing before rear metallization of dielectric stacks containing Al2O3. In this work we demonstrate the possibility of using this new approach in SHJ cells with a distinct advantage over other standard LFC techniques.

Low loss depressed cladding waveguide inscribed in YAG:Nd single crystal by femtosecond laser pulses

A depressed cladding waveguide with record low loss of 0.12 dB/cm is inscribed in YAG:Nd(0.3at.%) crystal by femtosecond laser pulses with an elliptical beam waist. The waveguide is formed by a set of parallel tracks which constitute the depressed cladding. It is a key element for compact and efficient CW waveguide laser operating at 1064 nm and pumped by a multimode laser diode. Special attention is paid to mechanical stress resulting from the inscription process. Numerical calculation of mode distribution and propagation loss with the elasto-optical effect taken into account leads to the conclusion that the depressed cladding is a dominating factor in waveguide mode formation, while the mechanical stress only slightly distorts waveguide modes.

Green-to-red tunable SHG of a quantum-dot laser in a PPKTP waveguide

Quasi-phase-matching is an important and widelyused technique in nonlinear optics enabling efficient frequency up-conversion. However, since its introduction almost half a century ago, this technique is well developed for near infrared (IR) but is intrinsically limited in spectral tunability in the visible range by the strict conditions set by the spatial modulation which compensates the momentum mismatch imposed by the dispersion. Here, we provide a fundamental generalization of quasi-phase-matching based on the utilization of a significant difference in the effective refractive indices of the high- and low-order modes in multimode waveguides. This concept enables to match the period of poling in a very broad wavelength range and opens up a new avenue for an order-ofmagnitude increase in wavelength range for frequency conversion from a single crystal. Using this approach, we demonstrate an all-room-temperature continuous-wave (CW) second harmonic generation (SHG) with over 60 nm tunability from green to red in a periodically-poled potassium titanyl phosphate (PPKTP) waveguide pumped by a single broadly-tunable quantumdot laser diode. © 2012 by Astro, Ltd.

Supermode-noise suppression using a nonlinear Fabry–Pérot filter in a harmonically mode-locked fiber ring laser

A simple efficient method for stabilizing a harmonically mode-locked fiber ring laser is proposed. In this method, a linear optical filter and a nonlinear Fabry–Pérot filter in which the refractive index is optical intensity dependent are located in the laser cavity. The linear filter is used to select a fixed lasing wavelength, and the Fabry–Pérot filter introduces a negative all-optical feedback mechanism that is able to suppress pulse-to-pulse amplitude fluctuations in the laser cavity. The scheme was experimentally demonstrated using a fiber Bragg grating as the linear filter and a laser diode biased below threshold as the nonlinear Fabry–Pérot, and stable harmonically mode-locked pulses with a supermode noise suppression ratio >55 dB were obtained.

Passively Q-switched erbium-doped fiber laser using evanescent field interaction with gold-nanosphere based saturable absorber

We demonstrate an all-fiber passively Q-switched erbiumdoped fiber laser (EDFL) using a gold-nanosphere (GNS) based saturable absorber (SA) with evanescent field interaction. Using the interaction of evanescent field for fabricating SAs, long nonlinear interaction length of evanescent wave and GNSs can be achieved. The GNSs are synthesized from mixing solution of chloroauricacid (HAuCl4) and sodium citrate by the heating effects of the microfiber's evanescent field radiation. The proposed passively Q-switched EDFL could give output pulses at 1562 nm with pulse width of 1.78 μs, a repetition rate of 58.1 kHz, a pulse energy of 133 nJ and a output power of 7.7 mWwhen pumped by a 980 nm laser diode of 237 mW. © 2014 Optical Society of America.

Superfocusing of high-M2 semiconductor laser beams:experimental demonstration

The focusing of multimode laser diode beams is probably the most significant problem that hinders the expansion of the high-power semiconductor lasers in many spatially-demanding applications. Generally, the 'quality' of laser beams is characterized by so-called 'beam propagation parameter' M2, which is defined as the ratio of the divergence of the laser beam to that of a diffraction-limited counterpart. Therefore, M2 determines the ratio of the beam focal-spot size to that of the 'ideal' Gaussian beam focused by the same optical system. Typically, M2 takes the value of 20-50 for high-power broad-stripe laser diodes thus making the focal-spot 1-2 orders of magnitude larger than the diffraction limit. The idea of 'superfocusing' for high-M2 beams relies on a technique developed for the generation of Bessel beams from laser diodes using a cone-shaped lens (axicon). With traditional focusing of multimode radiation, different curvatures of the wavefronts of the various constituent modes lead to a shift of their focal points along the optical axis that in turn implies larger focal-spot sizes with correspondingly increased values of M2. In contrast, the generation of a Bessel-type beam with an axicon relies on 'self-interference' of each mode thus eliminating the underlying reason for an increase in the focal-spot size. For an experimental demonstration of the proposed technique, we used a fiber-coupled laser diode with M2 below 20 and an emission wavelength in ~1μm range. Utilization of the axicons with apex angle of 140deg, made by direct laser writing on a fiber tip, enabled the demonstration of an order of magnitude decrease of the focal-spot size compared to that achievable using an 'ideal' lens of unity numerical aperture. © 2014 SPIE.

Polarization dynamics of bound state solitons in a carbon nanotubes mode locked erbium doped fiber laser

Optical solitons are important in the modern photonics. Passively mode locked erbium doped fiber lasers provide a neat platform to study soliton dynamics. Soliton interaction dynamics is important for various applications and has quite different manifestations, including e.g. such as bound state solitons [1], soliton rains [2]. Soliton interactions have been observed with different mode locking approaches such as figure-of-eight [3] and nonlinear polarization rotation [4]. Carbon nanotubes (CNT) have recently been widely applied as an efficient saturable absorber for passively mode locked fiber lasers. We have recently studied the polarization dynamics in a CNT mode locked vector soliton erbium doped fiber laser [5]. So far, the polarization dynamics of bound state solitons have yet to be investigated. In this report, we present a wide range of polarization dynamics of bound state solitons generated in a CNT mode locked erbium doped fiber laser. The fiber laser consists of ∼ 2 m highly doped erbium fiber (Liekki Er80-8/125) as the gain medium, an optical isolator to ensure unidirectional oscillation anda 980 nm laser diode is used to pump the gain through the 1550/980 nm wavelength division multiplexer. A fused 10:90 coupler is used to couple 10 % of the light out of the laser cavity and two in-line polarization controllers (NewPort) are used to control the birefringence of the cavity and polarization of the pump light respectively. The total cavity length is ∼ 7.8 m indicating a 25.7 MHz fundamental repetition rate. © 2013 IEEE.

Higher-order soliton generation in hybrid mode-locked thulium-doped fiber ring laser

A thulium-doped all-fiber laser passively mode-locked by the co-action of nonlinear polarization evolution and single-walled carbon nanotubes operating at 1860-1980 nm wavelength band is demonstrated. Pumped with the single-mode laser diode at 1.55 μm laser generates near 500-fs soliton pulses at repetition rate ranging from 6.3 to 72.5 MHz in single-pulse operation regime. Having 3-m long cavity average output power reached 300 mW, giving the peak power of 4.88 kW and the pulse energy of 2.93 nJ with slope efficiency higher than 30%. At a 21.6-m long ring cavity average output power of 117 mW is obtained, corresponding to the pulse energy up to 10.87 nJ and a pulse peak power of 21.7 kW, leading to the higher-order soliton generation.

Passive mode locking in erbium-doped fibre laser by carbon nanotubes

Passively mode locked fibre lasers have a variety of applications ranging from telecommunication to medical photonics. Carbon nanotubes (CNTs) have attracted recently a great deal of attention as a promising solution for saturable absorber elements required for laser mode locking (see e.g. [1-3] and references therein). CNTs can be used as a saturable absorber in passively mode locked fibre laser directly [1,2] or as a CNTs polymer composites [3]. An attractive feature of CNT-based solutions in fibre lasers is a possibility to maintain the compactness, robustness of all-fibre format and low cost through using all standard telecom compatible components. The two important technical challenges in such type of lasers are: (i) to achieve stable polarization properties of the generated radiation without using complex control elements, and, (ii) to avoid low frequency instabilities of the mode-locked pulse train. In this paper we report results of the experiments on mode-locked soliton fibre laser using the following standard components: 1m of highly doped erbium fibre (Liekki Er80-8/125) serves as the gain medium with nominal absorption of 80 dB/m at 1530 nm; a 976 nm laser diode providing up to 310mW power is used to pump the laser via a 980/1550 wavelength division multiplexing; an isolator is employed to ensure single direction oscillation; SMF-28 is used to create necessary amount of anomalous dispersion to form soliton pulse making the total cavity length around 7.83 m; the CNT-polyvinyl alcohol polymer saturable absorber sandwiched in the FC/PC connector is used as a mode-locker device (see [3] for details). © 2011 IEEE.

Optical gain at 1550 nm from colloidal solution of Er3+-Yb3+ codoped NaYF4 nanocubes

We demonstrated optical amplification at 1550 nm with a carbon tetrachloride solution of Er3+-Yb3+ codoped NaYF4 nanocubes synthesized with solvo-thermal route. Upon excitation with a 980 nm laser diode, the nanocube solution exhibited strong near-infrared emission by the I-4(13/2) -> I-4(15/2) transition of Er3+ ions due to energy transfer from Yb3+ ions. We obtained the highest optical gain coefficient at 1550 nm of 0.58 cm(-1) for the solution with the pumping power of 200 mW. This colloidal solution might be a promising candidate as a liquid medium for optical amplifier and laser at the optical communication wavelength. (C) 2009 Optical Society of America

Infrared luminescence properties of bismuth-doped barium silicate glasses

Infrared (IR) luminescence covering 1.1 to similar to 1.6 mu m wavelength region was observed from bismuth-doped barium silicate glasses, excited by a laser diode at 808 nm wavelength region, at room temperature. The peak of the IR luminescence appears at 1325 nm. A full width half-maximum (FWHM) and the lifetime of the fluorescence is more than 200 nm and 400 mu s, respectively. The fluorescence intensity increases with Al2O3 content, but decreases with BaO content. We suggest that the IR luminescence should be ascribed to the low valence state of bismuth Bi2+ or Bi+, and Al3+ ions play an indirect dispersing role for the infrared luminescent centers.

New optoelectronic devices using GaAs-GaAlAs epitaxy

Three subjects related to epitaxial GaAs-GaAlAs optoelectronic devices are discussed in this thesis. They are:

1. Embedded Epitaxy

This is a technique of selective multilayer growth of GaAs- Ga_1-xAl_xAs single crystal structures through stripe openings in masking layers on GaAs substrates. This technique results in prismatic layers of GaAs and Ga_1-xAl_xAs "embedded" in each other and leads to controllable uniform structures terminated by crystal faces. The dependence of the growth habit on the orientation of the stripe openings has been studied. Room temperature embedded double heterostructure lasers have been fabricated using this technique. Threshold current densities as low as 1.5 KA/cm² have been achieved.

2. Barrier Controlled PNPN Laser Diode

It is found that the I-V characteristics of a PNPN device can be controlled by using potential barriers in the base regions. Based on this principle, GaAs-GaAlAs heterostructure PNPN laser diodes have been fabricated. GaAlAs potential barriers in the bases control not only the electrical but also the optical properties of the device. PNPN lasers with low threshold currents and high breakover voltage have been achieved. Numerical calculations of this barrier controlled structure are presented in the ranges where the total current is below the holding point and near the lasing threshold.

3. Injection Lasers on Semi-Insulating Substrates

GaAs-GaAlAs heterostructure lasers fabricated on semi-insulating substrates have been studied. Two different laser structures achieved are: (1) Crowding effect lasers, (2) Lateral injection lasers. Experimental results and the working principles underlying the operation of these lasers are presented. The gain induced guiding mechanism is used to explain the lasers' far field radiation patterns. It is found that Zn diffusion in Ga_1-xAl_xAs depends on the Al content x, and that GaAs can be used as the diffusion mask for Zn diffusion in Ga_1-xAl_xAs. Lasers having very low threshold currents and operating in a stable single mode have been achieved. Because these lasers are fabricated on semi-insulating substrates, it is possible to integrate them with other electronic devices on the same substrate. An integrated device, which consists of a crowding effect laser and a Gunn oscillator on a common semi-insulating GaAs substrate, has been achieved.

矩阵理论在半导体激光器耦合中的应用

傍轴近似下的光学矩阵理论，可以简化光束传输计算过程，使光学系统设计更为方便。将ABCD变换矩阵方法引入到耦合光学系统的设计中，运用高斯光束的ABCD法则，详尽地给出了某一耦合方式下的半导体激光器耦合入单模光纤系统的设计；另一方面，对系统的耦合损耗与耦合距离的关系进行了理论计算，并把计算结果与最近的实验报道做了比较，它们基本相吻合，说明此方法是可行的、合理的。从整个设计及理论计算来看，ABCD矩阵方法减少了复杂的计算，从而简化了设计过程，与通常的衍射计算相比，它不失为一种方便、有效的方法，同时它对生产半导体

Small-dynamic-angle measurement using tangent relationship and phase-modulating technique

A method using two prisms for measurement of small dynamic angles is proposed in which the measurement is based on a simple tangent equation and a phase-modulating interferometer with a laser diode to measure dynamic optical path differences with higher accuracy. Owing to the simple tangent equation, the symmetry requirement on the two prisms in the optical configuration is eliminated, and easy measurement of the separations between two parallel beams with a position-sensitive detector is achieved. Small-dynamic-angle measurements are experimentally demonstrated with high accuracy. (C) 2007 Society of Photo-Optical Instrumentation Engineers.