Photosensitivity study of GeS2 chalcogenide glass under femtosecond laser pulses irradiation

The present study discusses the photosensitivity of GeS2 chalcogenide glass in response to irradiation with femtosecond pulses at 1047 nm. Bulk GeS2 glasses are prepared by conventional melt quenching technique and the amorphous nature of the glass is confirmed using X-ray diffraction. Ultrafast laser inscription technique is used to fabricate the straight channel waveguides in the glass. Single scan and multi scan waveguides are inscribed in GeS2 glasses of length 0.65 cm using a master oscillator power amplifier Yb doped fiber laser (IMRA mu jewel D400) with different pulse energy and translation speed. Diameters of the inscribed waveguides are measured and its dependence on the inscription parameters such as translation speed and pulse energy is studied. Butt coupling method is used to characterize the loss measurement of the inscribed optical waveguides. The mode field image of the waveguides is captured using CCD camera and compared with the mode field image of a standard SMF-28 fibers.

Stable single frequency and single polarization DFB fiber lasers operated at 1053 nm

Stable single-frequency and single-polarization distributed-feedback (DFB) fiber laser was realized by giving a pressure on the phase shift region of the fiber grating. The output wavelength of the DFB fiber laser is 1053 nm. When the pump power of 980 nm laser diode is 100 and 254 mW, the output power can reach 8.3 and 37.1 mW and the polarization extinction ratio was 26 and 20 dB, respectively. After chopped by Acousto-optic modulator (0.3 Hz), the pulse peak value variance is 4.65%(peak to peak) and 1.098% (RMS) for 31 min. (C) 2006 Elsevier Ltd. All rights reserved.

Passive Q-switching of short-length Tm3+-doped silica fiber lasers by polycrystalline Cr2+:ZnSe microchips

We demonstrate passive Q-switching of short-length double-clad Tm3+-doped silica fiber lasers near 2 mu m pumped by a laser diode array (LDA) at 790 nm. Polycrystalline Cr2+:ZnSe microchips with thickness from 0.3 to 1 mm are adopted as the Q-switching elements. Pulse duration of 120 ns, pulse energy over 14 mu] and repetition rate of 53 kHz are obtained from a 5-cm long fiber laser. As high as 530 kHz repetition rate is achieved from a 50-cm long fiber laser at similar to 10-W pump power. The performance of the Q-switched fiber lasers as a function of fiber length is also analyzed. (c) 2008 Elsevier B.V. All rights reserved.

20-W average power, high repetition rate, nanosecond pulse with diffraction limit from an all-fiber MOPA system

In this article, we report an all-fiber master oscillator power amplifier (MOPA) system, which can provide high repetition rate and nanosecond pulse with diffraction-limit. The system was constructed using a (2 + 1) X 1 multimode combiner. The Q-Switched, LD pumped Nd:YVO4 solid-state laser wets used (is master oscillator. The 976-nm fiber-coupled module is used as pump source. A 10-m long China-made Yb3+-doped D-shape double-clad large-mode-area fiber was used as amplifier fiber. The MOPA produced as much as 20-W average power with nanosecond pulse and near diffraction limited. The pulse duration is maintained at about 15 its during 50-175 kHz. The system employs a simple and compact architecture and is therefore suitable for the use in practical applications such as scientific and military airborne LIDAR and imaging. Based oil this system. the amplification performances of. the all fiber amplifier is investigated. (C) 2008 Wiley Periodicals, Inc.

7.3 W of single-frequency output power at 2.09 μm from an Ho:YAG monolithic nonplanar ring laser

Single-frequency output power of 7.3 W at 2.09 mu m from a monolithic Ho:YAG nonplanar ring oscillator (NPRO) is demonstrated. Resonantly pumped by a Tm-doped fiber laser at 1.91 mu m, the Ho:YAG NPRO produces 71% of slope efficiency with respect to absorbed pump power and nearly diffraction-limited output with a beam quality parameter of M-2 approximate to 1.1. (c) 2008 Optical Society of America

Nanotube-based passively mode-locked Raman laser

We demonstrate passive mode-locking of a Raman fiber laser using a nanotube-based saturable absorber. The normal dispersion cavity generates highly-chirped 500 ps pulses that are compressed down to 2 ps, with 1.4 kW peak power. © 2011 OSA.

Fibre laser microvia drilling and ablation of Si with tuneable pulse shapes

The dramatic increase in hole quality on single crystalline silicon with an 1 μm fiber laser has been reported recently, it redefines the processing options for Si at that wavelength. This study investigated the effects of the MOPA based pulse tuning on the changes of the machined depth and the mass removal mechanism for the generation of microvia holes. Hole depths were measured and surface morphology studied using SEM and optical interferometric profilometry. The pulse peak power was found to strongly influence the material removal mechanism with fixed pulse duration. High peak powers (>1 kW) gave vaporization dominated ablation, left a limited re solidified molten layer and clean hole formation. The pulse duration was found to strongly influence the machined depth. Longer pulse durations generated deeper holes with constant peak power (>1 kW). In comparison with the DPSS UV laser, the IR fiber laser of longer pulse durations machined deeper holes and generated less resolidifed melt beyond the hole rim at high fluencies. The comparison suggests that some applications (microvia drilling) of the DPSS UV laser can be replaced with the more flexible, low cost IR fiber laser. © KSPE and Springer 2012.

Graphene passively Q-switched two-micron fiber lasers

We demonstrate a passively Q-switched thulium fiber laser, using a graphene-based saturable absorber. The laser is based on an all-fiber ring cavity and produces ∼2.3 μs pulses at 1884nm, with a maximum pulse energy of 70 nJ. © 2012 OSA.

Graphene passively Q-switched two-micron fiber lasers

We demonstrate a passively Q-switched thulium fiber laser, using a graphene-based saturable absorber. The laser is based on an all-fiber ring cavity and produces ~2.3 μs pulses at 1884nm, with a maximum pulse energy of 70 nJ. © 2011 Optical Society of America.

Graphene passively Q-switched two-micron fiber lasers

We demonstrate a passively Q-switched thulium fiber laser, using a graphene-based saturable absorber. The laser is based on an all-fiber ring cavity and produces ~2.3 μs pulses at 1884nm, with a maximum pulse energy of 70 nJ. © 2011 Optical Society of America.

Graphene passively Q-switched two-micron fiber lasers

We demonstrate a passively Q-switched thulium fiber laser, using a graphene-based saturable absorber. The laser is based on an all-fiber ring cavity and produces ~2.3 μs pulses at 1884nm, with a maximum pulse energy of 70 nJ. ©2011 Optical Society of America.

Sub-100fs pulse generation from a fiber oscillator mode-locked by nanotubes

We report an ultrafast fiber laser based on carbon nanotube saturable absorber. 84 fs pulses are generated directly from the fiber oscillator with 61.2 nm spectral width. © 2011 Optical Society of America.

Nanotube-based passively mode-locked Raman laser

We demonstrate passive mode-locking of a Raman fiber laser using a nanotube-based saturable absorber. The normal dispersion cavity generates highly-chirped 500 ps pulses that are compressed down to 2 ps, with 1.4 kW peak power. © OSA/ CLEO 2011.

Surface characteristics of SiO2-TiO2 strip fabricated by laser direct writing

SiO2-TiO2 sol-gel films are deposited on SiO2/Si by dip-coating technique. The SiO2-TiO2 strips are fabricated by laser direct writing using all ytterbium fiber laser and followed by chemical etching. Surface structures, morphologies and roughness of the films and strips are characterized. The experimental results demonstrate that the SiO2-TiO2 sol-gel film is loose in Structure and a shrinkage concave groove forms if the film is irradiated by laser beam. The surface roughness of both non-irradiated and laser irradiated areas increases with the chemical etching time. But the roughness of laser irradiated area increases more than that of non-irradiated area under the same etching time. After being etched for 28 s, the surface roughness value of the laser irradiated area increases from 0.3 nm to 3.1 nm.