Fast Discrimination of Commerical Corn Varieties Based on Near Infrared Spectra

The existing methods for the discrimination of varieties of commodity corn seed are unable to process batch data and speed up identification, and very time consuming and costly. The present paper developed a new approach to the fast discrimination of varieties of commodity corn by means of near infrared spectral data. Firstly, the experiment obtained spectral data of 37 varieties of commodity corn seed with the Fourier transform near infrared spectrometer in the wavenurnber range from 4 000 to 12 000 cm (1). Secondly, the original data were pretreated using statistics method of normalization in order to eliminate noise and improve the efficiency of models. Thirdly, a new way based on sample standard deviation was used to select the characteristic spectral regions, and it can search very different wavenumbers among all wavenumbers and reduce the amount of data in part. Fourthly, principal component analysis (PCA) was used to compress spectral data into several variables, and the cumulate reliabilities of the first ten components were more than 99.98%. Finally, according to the first ten components, recognition models were established based on BPR. For every 25 samples in each variety, 15 samples were randomly selected as the training set. The remaining 10 samples of the same variety were used as the first testing set, and all the 900 samples of the other varieties were used as the second testing set. Calculation results showed that the average correctness recognition rate of the 37 varieties of corn seed was 94.3%. Testing results indicate that the discrimination method had higher precision than the discrimination of various kinds of commodity corn seed. In short, it is feasible to discriminate various varieties of commodity corn seed based on near infrared spectroscopy and BPR.

Theoretical design or single-polarization single-mode microstructured polymer optical fibres

Using the full-vector plane-wave expansion method, a kind of PMMA-based polarization-maintaining microstructured optical fibre (PM-mPOF) is theoretically studied. Dependence of the cutoff wavelengths of the two orthogonal polarization states (polarized along the two principal axes of PM-mPOF) on the structure parameters of the fibre is investigated in detail. A single-polarization single-mode (SPSM) PM-mPOF working in the visible region is designed and optimized with the result of the maximum SPSM bandwidth of 140 nm.

Simultaneous multiwavelength observations of sagittarius A

We observed Sgr A* using the Very Large Array (VLA) and the Giant Metrewave Radio Telescope (GMRT) at multiple centimeter and millimeter wavelengths on 2003 June 17. The measured flux densities of Sgr A*, together with those obtained from the Submillimeter Array (SMA) and the Keck II 10 m telescope on the same date, are used to construct a simultaneous spectrum of Sgr A* from 90 cm to 3.8 mu m. The simultaneous spectrum shows a spectral break at about 3.6 cm, a possible signature of synchrotron self-absorption of the strong radio outburst that occurred near epoch 2003 July 17. At 90 cm, the flux density of Sgr A* is 0.22 +/- 0.06 Jy, suggesting a sharp decrease in flux density at wavelengths longer than 47 cm. The spectrum at long cm wavelengths appears to be consistent with free-free absorption by a screen of ionized gas with a cutoff similar to 100 cm. This cutoff wavelength appears to be three times longer than that of similar to 30 cm suggested by Davies, Walsh, & Booth based on observations in 1974 and 1975. Our analysis suggests that the flux densities of Sgr A* at wavelengths longer than 30 cm could be attenuated and modulated by stellar winds from massive stars close to Sgr A*.

CHARACTERISTICS OF THE MAGNETIC DEPOPULATION OF SUBBANDS IN VERY NARROW SYSTEMS

We present a model for electrons confined in narrow conducting channels by a parabolic well under moderate to high magnetic fields which takes into account a cutoff in the filling of the subbands. Such a cutoff gives rise to energy-separated subbands and a two-dimensional (2D) like subband depopulation, resulting in a relation between sublevel index n and inverse magnetic field B-1 such that in the high-field regime it changes over to the well-known 2D form as expected, and in the moderate field regime it shows pronounced deviation from linearity. This agrees well with the experimental results. The linear region of the n-B-1 experimental plot is believed to arise from the two dimensionality of the system. Calculations show that no resolvable 1D sublevel exists in the 0.5-mu-m-wide wire at very small magnetic fields (including zero field), which agrees qualitatively with the experimental results found in other wires that the Hall resistance, R(H), approaches its classical value B/n(e)e in this region and R(H) = 0 at B = 0, where n(e) is the electron concentration. In this model the linear and nonlinear regions in the experimental n-B-1 plot are used to extract the characteristic frequency omega-0, and the effective 2D electron concentration N(e)2D, respectively.

A low power high linearity baseband for a direct conversation CMMB tuner

An analog baseband circuit made in a 0.35-μm SiGe BiCMOS process is presented for China Multimedia Mobile Broadcasting (CMMB) direct conversion receivers. A high linearity 8th-order Chebyshev low pass filter (LPF) with accurate calibration system is used. Measurement results show that the filter provides 0.5-dB pass-band ripple, 4% bandwidth accuracy, and -35-dB attenuation at 6 MHz with a cutoff frequency of 4 MHz. The current steering type variable gain amplifier (VGA) achieves more than 40-dB gain range with excellent temperature compensation.This tuner baseband achieves an OIP3 of 25.5 dBm, dissipates 16.4 mA under a 2.8-V supply and occupies 1.1 mm~2 of die size.

A widely tunable continuous-time LPF for a direct conversion DBS tuner

A continuous-time 7th-order Butterworth Gm-C low pass filter (LPF) with on-chip automatic tuning circuit has been implemented for a direct conversion DBS tuner in 0.35μm SiGe BiCMOS technology. The filter's -3 dB cutoff frequency f0 can be tuned from 4 to 40 MHz. A novel on-chip automatic tuning scheme has been successfully realized to tune and lock the filter's cutoff frequency. Measurement results show that the filter has -0.5 dB passband gain, +/- 5% bandwidth accuracy, 30 nV/Hz~(1/2) input referred noise, -3 dBVrms passband IIP3, and 27 dBVrms stopband IIP3. The I/Q LPFs with the tuning circuit draw 13 mA (with f_0 = 20 MHz) from 5 V supply, and occupy 0.5 mm~2.

A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design

We propose and fabricate an A1GaN/GaN high electron mobility transistor （HEMT） on sapphire substrate using a new kind of electron beam （EB） lithography layout for the T-gate. Using this new layout,we can change the aspect ratio （ratio of top gate dimension to gate length） and modify the shape of the T-gate freely. Therefore, we obtain a 0.18μm gate-length AlGaN/GaN HEMT with a unity current gain cutoff frequency （f_T） of 65GHz. The aspect ratio of the T-gate is 10. These single finger devices also exhibit a peak extrinsic transconductance of 287mS/mm and a maximum drain current as high as 980mA/mm.

Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications

A high performance AlAs/In0.53 Ga0.47 As/InAs resonant tunneling diode （RTD） on InP substrate is fabricated by inductively coupled plasma etching. This RTD has a peak-to-valley current ratio （PVCR） of 7. 57 and a peak current density Jp = 39.08kA/cm^2 under forward bias at room temperature. Under reverse bias, the corresponding values are 7.93 and 34.56kA/cm^2 . A resistive cutoff frequency of 18.75GHz is obtained with the effect of a parasitic probe pad and wire. The slightly asymmetrical current-voltage characteristics with a nominally symmetrical structure are also discussed.

X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD

The growth,fabrication,and characterization of 0.2μm gate-length AlGaN/GaN HEMTs,with a high mobility GaN thin layer as a channel,grown on (0001) sapphire substrates by MOCVD,are described.The unintentionally doped 2.5μm thick GaN epilayers grown with the same conditions as the GaN channel have a room temperature electron mobility of 741cm2/(V·s) at an electron concentration of 1.52×1016 cm-3.The resistivity of the thick GaN buffer layer is greater than 108Ω·cm at room temperature.The 50mm HEMT wafers grown on sapphire substrates show an average sheet resistance of 440.9Ω/□ with uniformity better than 96%.Devices of 0.2μm×40μm gate periphery exhibit a maximum extrinsic transconductance of 250mS/mm and a current gain cutoff frequency of77GHz.The AlGaN/GaN HEMTs with 0.8mm gate width display a total output power of 1.78W (2.23W/mm) and a linear gain of 13.3dB at 8GHz.The power devices also show a saturated current density as high as 1.07A/mm at a gate bias of 0.5V.

Second-Order Raman Scattering from n- and p-Type 4H-SiC

The results of second-order Raman-scattering experiments on n- and p-type 4H-SiC are presented,covering the acoustic and the optical overtone spectral regions.Some of the observed structures in the spectra are assigned to particular phonon branches and the points in the Brillouin zone from which the scattering originates.There exists a doublet at 626/636cm-1 with energy difference about 10cm-1 in both n- and p-type 4H-SiC,which is similar to the doublet structure with the same energy difference founded in hexagonal GaN,ZnO, and AlN.The cutoff frequency at 1926cm-1 of the second-order Raman is not the overtone of the A1(LO) peak of the n-type doping 4H-SiC,but that of the undoping one.The second-order Raman spectrum of 4H-SiC can hardly be affected by doping species or doping density.

Reconstructing the interaction between dark matter and holographic dark energy

We reconstruct the interaction rate between dark matter and the holographic dark energy with the parametrized equation of states and the future event horizon as the infrared cutoff length. It is shown that the observational constraints from the 192 type Ia Supernovae (SnIa) and baryon acoustic oscillation (BAO) measurement permit the negative interaction in the wide region. Moreover, the usual phenomenological descriptions cannot describe the reconstructed interaction well for many cases. The other possible interaction is also discussed.

Synthesis and properties of novel soluble polyimides having a spirobisindane-linked dianhydride unit

A new synthetic procedure was elaborated allowing the preparation of semiaromatic dianhydride. N-Methyl protected 4-chlorophthalic anhydride was nitrated with HNO3 to produce N-methyl-4-chloro-5-nitrophthalimide (1). The aromatic nucleophilic substitution reaction between 5,5',6,6'-tetrahydroxy-3,3,3',3'-tetramethyl-1,1-spirobisindane and 1 afforded spirobisindane-linked bis(N-methylphthalimide) (2), which was hydrolyzed and subsequently dehydrated to give the corresponding dianhydride (3). The latter was polymerized with five different aromatic diamines to afford a series of aromatic polyimides. The properties of polyimides such as inherent viscosity, solubility, UV transparency and thermal stability were investigated to illustrate the contribution of the introduction of spirobisindane groups into the polyimide backbone. The resulting polyimides were readily soluble in polar solvents such as chloroform, THF and N-methyl-2-pyrrolidone. The glass-transition temperatures of these polyimides were in the range of 254-292 degrees C. The tensile strength, elongation at break, and Young's modulus of the polyimide film were 68.8-106.6 MPa, 5.9-9.8%, 1.7-2.0 GPa, respectively. The polymer films were colorless and transparent with the absorption cutoff wavelength at 286-308 nm.

Polyimides derived from 3,3 '-bis(N-aminophthalimide)

A novel diamine, 3,3'-bis(N-aminophthalimide) (BAPI), was prepared from 3,3'-bis(N-phenylphthalimide). Its structure was determined via IR, H-1 NMR, N-15 NMR, elemental analysis, and single-crystal X-ray diffraction analysis. A series of homo- and copolyimides were synthesized by a conventional one-step method in p-chlorophenol. The characteristic IR absorption bands of hydrazine-based imide groups were near 1780, 1750, 1350, 1100, and 730 cm(-1). The polymers showed good solubility in polar aprotic solvents and phenols at room temperature. The temperatures of 5% weight loss (T-5%) of the polyimides ranged from 495 to 530 degrees C in air. DMTA analyses indicated that the glass-transition temperatures (Tgs) of the polyimides were in the range 371-432 degrees C. These polymers had cutoff wavelengths between 350 and 400 nm. The polyimide films of 6FDA/BAPI and 4,4'-HQPDA/BAPI were colorless; other films were pale yellow or yellow.

Local chain motions in a dilute solution of phenolphthalein poly(ether sulfone)

C-13 and H-1 relaxation times were measured as a function of temperature in two magnetic fields for dilute solutions of phenolphthalein poly(ether sulfone) (PES-C) in deuterated chloroform. The spin-lattice relaxation times were interpreted in terms of segmental motion characterized by the sharp cutoff model of Jones and Stockmayer (J. S. model). The phenyl group rotation is treated as a stochastic diffusion by the J. S. model. The restricted butterfly motion of the phenyl group attached to the cardo ring in PES-C is mentioned but is not discussed in detail in this work. Correlation times for the segmental motion are in the picosecond range which indicates the high flexibility of PES-C chains. The correlation time for the phenyl group internal rotation is similar to that of the segmental motion. The temperature dependence of these motions is weak. The apparent activation energy of the motions considered is less than 10 kJ/mol. The simulating results for PES are also reasonable considering the differences in structure compared with PES-C. The correlation times and the apparent activation energy obtained using the J. S. model for the main chain motion of PES-C are the same as those obtained using the damped orientational diffusion model and the conformational jump model.

NMR Spectra of polyimides: Interpretation and local chain motion study

Three kinds of high-performance polyimides 1 (poly(ketone-imide) PKI), 2 (poly(ether-imide) PEI) and 3 (poly(oxy-imide) POI) were studied using nuclear magnetic resonance (NMR). The NMR spectra of the polyimides were assigned according to the comprehensive consideration of the substitution effect of different substituting groups, viz. distortionless enhancement by polarization transfer (DEPT), no nuclear Overhauser effect (NNE), analysis of relaxation time, and two-dimensional correlated spectroscopy (COSY) techniques. The structural units of these three polyimides were determined. Carbon-13 and proton relaxation times for PEI and PKI were interpreted in terms of segmental motion characterized by the sharp cutoff model of Jones and Stockmayer (JS model) and anisotropic group rotation such as phenyl group rotation and methyl group rotation. Correlation times for the main-chain motion are in the tens of picosecond range which indicates the high flexibility of polyimide chains. Correlation times for phenyl group and methyl group rotations are more than 1 order of magnitude lower and approximately 1 order of magnitude higher than that of the main chain, respectively.