Structure and photoluminescence studies of Pr-implanted GaN

The structure and photoluminscence (PL) properties of Pr-implanted GaN thin films have been studied. RBS/channeling technique was used to explore the damage recovery at high annealing temperature and study the dependence of the radiation damage with ion implantation direction. A complete recovery of the ion implantation damage cannot be achieved at annealing temperatures up to 1050degreesC. It is found that the channeling implantation results in the decrease of the damage. The PL experimental results indicate that the PL efficiency increases exponentially with annealing temperature up to the maximum temperature of 1050degreesC. Moreover, the PL intensity is also seriously affected by ion implantation geometries. The PL intensity for the sample implanted along channeled direction is nearly 2 times more intense than that observed from the sample implanted along random direction. The thermal quenching of PL intensity from 10 to 300K for sample annealed at 1050degreesC is only 30%. (C) 2004 Elsevier B.V. All rights reserved.

Electrical characterization of Er- and Pr-implanted GaN films

Hall, current-voltage, and deep-level transient spectroscopy measurements were used to characterize the electrical properties of metalorganic chemical vapor deposition grown undoped, Er- and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. However, four defect levels located at 0.300, 0.188, 0.600, and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900 degrees C for 30 min, and four defect levels located at 0.280, 0.190, 0.610, and 0.390 eV below the conduction band were found in the Pr-implanted GaN films after annealing at 1050 degrees C for 30 min. The origins of the deep defect levels are discussed. (C) 2005 American Institute of Physics.

Deep level transient spectroscopy studies of Er and Pr implanted GaN films

Deep level transient spectroscopy measurements were used to characterize the electrical properties of metal organic chemical vapor deposition grown undoped, Er-implanted and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. But four defect levels located at 0.300 eV, 0.188 eV, 0.600 eV and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900 degrees C for 30 min, and four defect levels located at 0.280 eV, 0.190 eV, 0.610 eV and 0.390 eV below the conduction band were found in the Pr-implanted GaN films after annealing at 1050 degrees C for 30min. The origins of the deep defect levels are discussed. After annealing at 900 degrees C for 30min in a nitrogen flow, Er-related 1538nm luminescence peaks could be observed for the Er-implanted GaN sample. The energy-transfer and luminescence mechanism of the Er-implanted GaN film are described.

稀土(Er, Nd, Yb, Pr, Ho, Sm)有机/无机杂化材料的制备及发光性能研究

目前，国内外对于铕和铽等稀土配合物的可见区发光和应用都有大量研究，但对具有近红外发光（800-1700 nm）性能的稀土配合物的研究还处于起步阶段。由于稀土的近红外发光在光纤通讯、激光系统及诊断学等方面应用具有特殊的优点，越来越引起人们的兴趣和重视。 稀土近红外发光配合物的致命弱点是其光、热和化学稳定性较差，从而限制了其在很多领域的实际应用。而溶胶－凝胶材料和介孔材料具有良好的光、热和化学稳定性，能改善客体分子的结构环境和化学微环境，从而能有效提高客体分子的发光性能。因此，本论文将具有优良近红外发光性能的稀土配合物分别与上述两种基质复合，从实验和理论研究稀土近红外发光杂化材料的性能和应用价值，制备出具有良好稳定性的高效稀土近红外发光杂化材料，以期为光纤通讯、激光等领域提供潜在的候选材料。围绕这一宗旨，开展了如下工作： 通过原位技术分别得到了掺杂和嫁接[Ln(dbm)3phen]化合物（Ln = Er, Nd, Yb）的杂化凝胶材料，Ln-D-P gel和Xerogel-Ln。通过对其近红外发光性能的研究，表明材料中配体能很好的保护稀土离子，并将能量有效的传递给稀土离子。采用Judd-Ofelt理论对所得部分材料进行了光谱分析，基于实验数据和理论分析表明其具有潜在的光放大和激光应用价值。 选择了两种含全氟化烷基链的β-二酮配体Hhfth和Htfnb，通过功能化的phen-Si配体，将三元配合物[Ln(hfth)3phen] (Ln = Er, Nd, Yb, Sm)和[Pr(tfnb)3phen]成功共价嫁接到介孔MCM-41和SBA-15杂化材料中，得到的衍生材料Ln(hfth)3phen–MCM-41、Pr(tfnb)3phen–MCM-41和Ln(hfth)3phen–SBA-15、Pr(tfnb)3phen–SBA-15都保持了高度有序的介孔p6mm结构，并展现出稀土离子特征的近红外发射。所得稀土配合物功能化的材料的发射光谱能完全覆盖对光通讯极具应用价值的1300-1600nm区域。 通过对Er(dbm)3phen–M41(X, Y) (X = 1~14, Y = 3, 6, 12, 18, 24 h)材料系统的比较研究，选择了X = 12, Y = 6作为合成目标材料的优化参数，通过功能化的phen-Si配体将[Ln(dbm)3phen]配合物共价嫁接于有序介孔MCM-41和SBA-15中(Ln = Er, Nd, Yb)，所得两类材料Ln(dbm)3phenM41和Ln(dbm)3phenS15都保持了很好的介孔有序性，并具有良好的近红外发光性能。通过对Ln(dbm)3phenM41和Ln(dbm)3phenS15两类材料发光行为的比较，以及两类材料中稀土离子的含量及孔结构的分析，推出以SBA-15为载体得到的材料在相对发光强度和荧光寿命上，均比以MCM-41为载体的材料有所提高。 通过对8－羟基喹啉配体进行改性，合成了具有双功能的配体Q-Si，继而合成了共价嫁接8－羟基喹啉衍生物的介孔杂化材料Q–SBA-15，其形貌均一，并具有高度有序的介孔p6mm结构。通过配体交换反应，得到了嫁接稀土喹啉配合物的具有近红外发光性能的介孔杂化材料LnQ3–SBA-15 (Ln = Er, Nd, Yb)，其仍然保持高度有序的介孔结构，且外形呈现与母体材料Q–SBA-15相似的弯曲圆柱状。激发配体的吸收，LnQ3–SBA-15材料都分别展现出相应稀土离子特征的近红外发射，并详细分析和讨论了所得介孔杂化材料的近红外发光性能。

用电动势方法测定Pr-Al、Nd-Al体系的热力学性质和Nd-Al合金组成

本文测定了如下电池 Pr(固)|KCl-NaCl+2%PrCl_3|Pr-Al(X_(Pr) = 0.09-0.19) Pr-Al(X_(Pr) = 0.09-0.19)|KCl-NaCl+2% PrCl_3|Pr-Al(待测) Nd(固)|KCl-NaCl+2%NdCl_3|Nd-Al(X_(Nd) = 0.09-0.19) Nd-Al(X_(Nd) = 0.09-0.19)|KCl-NaCl+2%NdCl_3|Nd-Al(待测)的电动势与温度，待测合金组成的关系。温度范围是670－850 ℃，组成范围是Pr或Nd的摩尔分数从0.01到0.190。在此基础上计算了Pr-Al、Nd-Al合金熔体中各金属的活度、偏摩尔自由能、偏摩尔熵以及合金体系的摩尔混自由能、摩尔混合熵和摩尔混合焓，计算了合金相图的部分液相线温度和不同温度下PrAl_4、NdAl_4的标准生成自由能。在空气和氯气混合气氛下对电池Nd-Al(X_(dd) = 0.09-0.19)|KCl-NaCl+NdCl_3|Nd-Al(待测)的电动势与待测合金组成、电解质中NdCl_3含量的关系进行了探讨。为在电解Nd-Al合金过程中快速、近似分析合金组成提供了依据。在此基础上提出了一种快速、近似的分析方法。

用光化学方法氧化Tb~(3+)、Pr~(3+)、Ce~(3+)离子

本文内容包括Tb~(3+)、Pr~(3+)、Ce~(3+)的光氧化。研究了各种因素对氧化率或四价离子生成量的影响。在Tb~(3+)光氧化的基础上，建立了混合钇族稀土中Tb的光化学分析法及混合稀土中Tb的化学氧化分析方法。Tb~(3+)、Pr~(3+)的光氧化是开创性的工作，Tb的分析方法具有一定的应用价值。1 Ce~(3+)d HZO_3－HClO_4体系中的光氧化 用低压汞灯（254nm)、高压汞灯(366nm)和氩离子激光器(351/364nm, 458 nm, 477nm, 502 nm, 514, nm)光辐照Ce~(3+)-HZO_3-HClO_4溶液，Ce~(3+)发生光氧化反应，生成Ce(ZO_3)_4沉淀 。在低压汞灯254 nm波段可获得较高的氧化率，具它波段下的氧化率低，以低压汞灯为光源辐照。研究了温度、光强、酸度、Ce~(3+)初始浓度及辐照时间对氧化率的影响。降低酸度，选择较高的温度和较大的光强，有利于Ce~(3+)的光氧化。2 Tb~(3+)在KIO_4-KOH体系中的光氧化 用高压汞灯（366nm)光辐照Tb~(3+)-KIO_4-KOH溶液，首次实现了Tb~(3+)的光氧化。研究了碱度、络合剂浓度，Tb~(3+)初始浓度、辐照面积，光强和辐照时间等因素对Tb~(4+)生成的影响。测定了Tb(IV)/Rb(III)的氧化还原电势。适宜的KOH浓度应大于0.3M，KIO_4的浓度要比Tb~(3+)初始浓度大几个数量级。当KOH=0.6M, KIO_4=0.22M, 温度为13 ℃时。E_(Tb(IV)/Tb(III))=0.68优，生成的Tb~(4+)可溶性络离子为红棕色，最大吸收峰在420nm附近，比较稳定。3 用光氧化法分析钇族混合稀土中的Tb 根据Tb~(3+)在KIO_4-KOH体系中的光氧化反应，建立了钇族混合稀土中Tb的分光光度分析方法。在高压汞灯366nm的光辐照不无色的Tb~(3+)转变为红棕色的Tb~(4+)，其谱带的吸收峰值在420nm，其它三价钇族稀土无此反应，故无千扰，在Tb的分析浓度范围为1*10~(-5)M - 1*10~(-3)M时，符合Beer定律，Tb在钇族混合稀土中含量的分析最低限为0.2%。此方法可用于萃取钇族稀土过程中Tb的分析，方法简便快速。4 用化学氧化法分析混合稀土中的Tb 根据Tb~(3+)在KIO_4-KOH-K_2S_2O_8体系中的氧化反应，建立了混和稀土中Tb的分光光度分析方法。Tb~(3+)-KzO_4-KOH-K_2S_2O_8溶液加热，Tb~(3+)被氧化的Tb~(4+)，其颜色由无色转变为红棕色，最大吸收峰在420nm。Ce~(3+)加入KIO＿4－KOH溶液后，立即被完全氧化为Ce~(4+), Ce~(4+)在420nm也有吸收，其干扰可以在本底中排除，其它三价稀土离子在此体系中不能发生氧化反应，故无干扰。在Tb的分析浓度范围为5*10~(-5)-5*10~(-4)M时，符合Beer定律，Tb在混合稀土中含量分析的最低限为1％。此方法可用于萃取稀土过程中Tb的分析和监控，方法简便快速。5 Pr~(3+)在KZO_4－KOH体系中的光氧化用高压汞灯光辐照Pr~(3+)-KZO_4-KOH溶液，首次实现了Pr~(3+)的光氧化。生成的Pr~(4+)为棕褐色，最大吸收峰在400nm附近，稳定性较差，在水溶液中发生自还原反应。按Pr~(4+)在400nm的吸收峰值，研究了辐照时间，Pr~(3+)初始浓度，KOH浓度、KZO＿4浓度及Ce~(4+)共存时对Pr~9(4+)生成的影响。相应增加KOH及KZO＿4用量，有利于Pr~(4+)的生成，Ce~(4+)对Pr~(3+)的光氧化无所谓的“带同氧化作用”。

掺Er／Pr的GaN薄膜深能级的研究

利用深能级瞬态谱（DLTS）、傅里叶变换红外光谱（FT-IR）对GaN以及GaN掺Er／Pr的样品进行了电学和光学特性分析．研究发现未掺杂的GaN样品只在导带下0．270eV处有一个深能级；GaN注入Er经900℃，30min退火后的样品出现了四个深能级，能级位置位于导带下0．300eV，0．188eV，0．600eV和0．410eV；GaN注入Pr经1050℃，30min退火后的样品同样出现了四个深能级。能级位置位于导带下0．280eV，0．190eV，0．610eV和0．390eV；对每一个深能级的来源进行了讨论．光谱研究表明，掺Er的GaN样品经900℃，30min退火后，可以观察到Er的1538nm处的发光。而且对能量输运和发光过程进行了讨论．

Optical Pr operties of GaNAs and GaAsSb Semiconductors

Under short pulse laser excitation, it has been observed, for the first time, a new high-energy photoluminescence emission from GaNx As1- x/GaAs SQWs. This new emission has totally different optical properties compared with the localized exciton transition in GaNx As1-x, and is attributed to the recombination of delocalized excitons in QWs. At the same time, a competition process between localized and delocalized exciton emissions in GaNx As1-x/GaAs quantum wells is observed in the temperaturedependent PL spectra under the short pulse excitation. This competition process for the first time, reveals the physical origin of the temperature-induced S-shaped PL peak shift, which was often reported in the disordered alloy semiconductor system under continuous-wave excitation and puzzled people for a long time. We have also investigated a set of GaNx As1- x samples with small nitrogen composition( x ＜ 1% )by PL, and time-resolved PL. After the PL dependence on temperature and excitation power and PL dynamics were measured, the new PL peak was identified as an intrinsic transition of alloy, rather than N-related bound states. This is the first observation in PL, showing that alloy state exists in GaNx As1- x materials even when N composition is smaller than 0.1%. Finally by selective excitation,both type-Ⅰ and type-Ⅱ transitions were observed simultaneously in GaAs1-xSbx/GaAs SQWs for the first time.