Biogenesis of the C. elegans germline syncytium: from nucleation to maturation

La vie commence par la fusion des gamètes pour générer un zygote, dans lequel les constituants à la fois de l'ovocyte et des spermatozoïdes sont partagés au sein d'un syncytium. Le syncytium consiste en des cellules ou tissus dans lesquels des cellules nucléées individuelles distinctes partagent un cytoplasme commun. Alors que l’avantage du syncytium durant la fécondation est tout à fait évident, les syncytia se produisent également dans de nombreux contextes de développement différents dans les plantes, les champignons et dans le règne animal, des insectes aux humains, pour des raisons qui ne sont pas immédiatement évidentes. Par exemple, la lignée germinale de nombreuses espèces de vertébrés et d'invertébrés, des insectes aux humains, présente une structure syncytiale, suggérant que les syncytia constituent des phases conservées de développement de la lignée germinale. Malgré la prévalence commune des syncytia, ces derniers ont cependant confondu les scientifiques depuis des décennies avec des questions telles que la façon dont ils sont formés et maintenus en concurrence avec leurs homologues diploïdes, et quels sont les avantages et les inconvénients qu'ils apportent. Cette thèse va décrire l'utilisation de la lignée germinale syncytiale de C. elegans afin d'approfondir notre compréhension de l'architecture, la fonction et le mode de formation des tissus syncytiaux. Les cellules germinales (CGs) dans la lignée germinale de C. elegans sont interconnectées les unes aux autres par l'intermédiaire de structures appelées des anneaux de CG. En utilisant l'imagerie des cellules vivantes, nous avons d'abord analysé l'architecture syncytiale de la lignée germinale au long du développement et démontré que la maturation de l'anneau de CG se produit progressivement au cours de la croissance des larves et que les anneaux de CG sont composés de myosine II, de l'anilline canonique ANI-1, et de la courte isoforme d’anilline ANI-2, qui n'a pas les domaines de liaison à l’actine et à la myosine, depuis le premier stade larvaire, L1. Parmi les composants de l'anneau de CG, ANI-2 est exprimé au cours du développement et exclusivement enrichi entre les deux CGs primordiales (CGPs) au cours de l'embryogenèse de C. elegans, indiquant qu’ANI-2 est un composant bona fide des anneaux de CG. Nous avons en outre montré que les anneaux de CG sont largement absents dans les animaux mutants pour ani-2, montrant que leur maintien repose sur l'activité d'ANI-2. Contrairement à cela, nous avons trouvé que la déplétion d’ANI-1 a augmenté à la fois le diamètre des anneaux de CG et la largeur du rachis. Fait intéressant, la déplétion d’ANI-1 dans les mutants d’ani-2 a sauvé les défauts d'anneaux de CG des gonades déficientes en ani-2, ce qui suggère que l'architecture syncytiale de la lignée germinale de C. elegans repose sur un équilibre de l'activité de ces deux protéines Anilline. En outre, nous avons montré que lors de leur entrée à l'âge adulte, les mutants ani-2 présentent de sévères défauts de multinucléation des CGs qui découlent de l'effondrement des membranes de séparation des CGs individuelles. Cette multinucléation a coïncidé avec le début de la diffusion cytoplasmique, dont le blocage réduit la multinucléation des gonades mutantes pour ani-2, suggérant que les anneaux de CG résistent au stress mécanique associé au processus de diffusion cytoplasmique. En accord avec cela, nous avons trouvé aussi que la gonade peut soutenir la déformation élastique en réponse au stress mécanique et que cette propriété repose sur la malléabilité des anneaux de CGs. Dans une étude séparée afin de comprendre le mécanisme de formation du syncytium, nous avons suivi la dynamique de division de la cellule précurseur de la lignée germinale, P4 en deux CGP dans l’embryon de C. elegans. Nous avons démontré que les CGPs commencent la cytocinèse de manière similaire aux cellules somatiques, en formant un sillon de clivage, qui migre correctement et transforme ainsi l'anneau contractile en anneau de « midbody ring » (MBR), une structure qui relie de manière transitoire les cellules en division. Malgré cela, les CGPs, contrairement à leurs homologues somatiques, ne parviennent pas à accomplir la dernière étape de la cytocinèse, qui est la libération abscission-dépendante du MBR. Au lieu de cela, le MBR persiste à la frontière entre les CGPs en division et subit une réorganisation et une maturation pour se transformer finalement en structures en forme d'anneau qui relient les cellules en division. Nous montrons en outre que les composants du MB/MBR; UNC-59Septin, CYK-7, ZEN-4Mklp1, RHO-1RhoA sont localisés à des anneaux de CG au long du développement de la lignée germinale du stade L1 à l'âge adulte, ce qui suggère que les anneaux de CG sont dérivés des MBR. Bien qu'il reste encore beaucoup à faire pour comprendre pleinement le mécanisme précis de la formation du syncytium, le maintien, ainsi que la fonction du syncytium, nos résultats appuient un modèle dans lequel la stabilisation du MBR et la cytocinèse incomplète pourraient être une option conservée dans l’évolution pour la formation du syncytium. En outre, notre travail démontre que les régulateurs de la contractilité peuvent jouer un rôle dans la maturation et l’élasticité de l'anneau de CG au cours du développement de la lignée germinale, fournissant un ajout précieux pour une plus ample compréhension de la syncytiogenèse et de sa fonction.

Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application

Structural, electronic, and optical properties of amorphous and transparent zinc tin oxide films deposited on glass substrates by pulsed laser deposition (PLD) were examined for two chemical compositions of Zn:Sn=1:1 and 2:1 as a function of oxygen partial pressure PO2 used for the film deposition and annealing temperature. Different from a previous report on sputter-deposited films Chiang et al., Appl. Phys. Lett. 86, 013503 2005 , the PLD-deposited films crystallized at a lower temperature 450 °C to give crystalline ZnO and SnO2 phases. The optical band gaps Tauc gaps were 2.80−2.85 eV and almost independent of oxygen PO2 , which are smaller than those of the corresponding crystals 3.35−3.89 eV . Films deposited at low PO2 showed significant subgap absorptions, which were reduced by postthermal annealing. Hall mobility showed steep increases when carrier concentration exceeded threshold values and the threshold value depended on the film chemical composition. The films deposited at low PO2 2 Pa had low carrier concentrations. It is thought that the low PO2 produced high-density oxygen deficiencies and generated electrons, but these electrons were trapped in localized states, which would be observed as the subgap absorptions. Similar effects were observed for 600 °C crystallized films and their resistivities were increased by formation of subgap states due to the reducing high-temperature condition. High carrier concentrations and large mobilities were obtained in an intermediate PO2 region for the as-deposited films.

Antiviral property of marine actinomycetes against White Spot Syndrome Virus in penaeid shrimps

Aquaculture farms, particularly in Southeast Asia are facing severe crisis due to increasing incidences of White Spot Syndrome Virus (WSSV). Actinomycetes have provided many important bioactive compounds of high prophylactic and therapeutic value and are continually being screened for new compounds. In this communication, the results of a study made to determine the effectiveness of marine actinomycetes against the white spot disease in penaeid shrimps are presented. Twenty-five isolates of actinomycetes were tested for their ability to reduce infection due to WSSV among cultured shrimps. When these actinomycetes were made available as feed additives to the post-larvae of the black tiger shrimp Penaeus monodon for two weeks and challenged with WSSV, the post challenge survival showed variations from 11 to 83%. However, six isolates have shown to be the most potential candidates for further study.

Studies on Electrical and Thermal Properties of Certain Selected Photonic Materials

The present thesis is centered around the study of electrical and thermal properties of certain selected photonic materials.We have studied the electrical conduction mechanism in various phases of certain selected photonic materials and those associated with different phase transitions occurring in them. A phase transition leaves its own impressions on the key parameters like electrical conductivity and dielectric constant. However, the activation energy calculation reveals the dominant factor responsible for conduction process.PA measurements of thermal diffusivity in certain other important photonic materials are included in the remaining part of the research work presented in this thesis. PA technique is a promising tool for studying thermal diffusivities of solid samples in any form. Because of its crucial role and common occurrence in heat flow problems, the thermal diffusivity determination is often necessary and knowledge of thermal diffusivity can intum be used to calculate the thermal conductivity. Especially,knowledge of the thermal diffusivity of semiconductors is important due to its relation to the power dissipation problem in microelectronic and optoelectronic devices which limits their performances. More than that, the thermal properties, especially those of thin films are of growing interest in microelectronics and microsystems because of the heat removal problem involved in highly integrated devices. The prescribed chapter of the present theis demonstrates how direct measurement of thermal diffusivity can be carried out in thin films of interest in a simple and elegant manner using PA techniques. Although results of only representative measurements viz; thermal diffusivity values in Indium, Aluminium, Silver and CdS thin films are given here, evaluation of this quantity for any photonic and / electronic material can be carried out using this technique in a very simple and straight forward manner.

A Study on the Reversed Lack of Memory Property and its Generalizations

In this thesis, the concept of reversed lack of memory property and its generalizations is studied.We we generalize this property which involves operations different than the ”addition”. In particular an associative, binary operator ” * ” is considered. The univariate reversed lack of memory property is generalized using the binary operator and a class of probability distributions which include Type 3 extreme value, power function, reflected Weibull and negative Pareto distributions are characterized (Asha and Rejeesh (2009)). We also define the almost reversed lack of memory property and considered the distributions with reversed periodic hazard rate under the binary operation. Further, we give a bivariate extension of the generalized reversed lack of memory property and characterize a class of bivariate distributions which include the characterized extension (CE) model of Roy (2002a) apart from the bivariate reflected Weibull and power function distributions. We proved the equality of local proportionality of the reversed hazard rate and generalized reversed lack of memory property. Study of uncertainty is a subject of interest common to reliability, survival analysis, actuary, economics, business and many other fields. However, in many realistic situations, uncertainty is not necessarily related to the future but can also refer to the past. Recently, Di Crescenzo and Longobardi (2009) introduced a new measure of information called dynamic cumulative entropy. Dynamic cumulative entropy is suitable to measure information when uncertainty is related to the past, a dual concept of the cumulative residual entropy which relates to uncertainty of the future lifetime of a system. We redefine this measure in the whole real line and study its properties. We also discuss the implications of generalized reversed lack of memory property on dynamic cumulative entropy and past entropy.In this study, we extend the idea of reversed lack of memory property to the discrete set up. Here we investigate the discrete class of distributions characterized by the discrete reversed lack of memory property. The concept is extended to the bivariate case and bivariate distributions characterized by this property are also presented. The implication of this property on discrete reversed hazard rate, mean past life, and discrete past entropy are also investigated.

Investigations on Photoconductivity and Electrical Switiching in Selected Chalcogenide Glasses

In this thesis, we present the results of our investigations on the photoconducting and electrical switching properties of selected chalcogenide glass systems. We have used XRD and X-ray photoelectron spectroscopy (XPS) analysis for confinuing the amorphous nature of these materials and for confirming their constituents respectively.Photoconductivity is the enhancement in electrical conductivity of materials brought about by the motion of charge carriers excited by absorbed radiation. The phenomenon involves absorption, photogeneration, recombination and transport processes and it gives good insight into the density of states in the energy gap of solids due to the presence of impurities and lattice defects. Photoconductivity measurements lead to the determination of such important parameters as quantum efficiency, photosensiti\'ity, spectral sensitivity and carrier lifetime. Extensive research work on photoconducting properties of amorphous semiconductors has resulted in the development of a variety of very sensitive photodetectors. Photoconductors are finding newer and newer uses eyery day. CdS, CdSe. Sb2S3, Se, ZnO etc, are typical photoconducting materials which are used in devices like vidicons, light amplifiers, xerography equipment etc.Electrical switching is another interesting and important property possessed by several Te based chalcogenides. Switching is the rapid and reversible transition between a highly resistive OFF state, driven by an external electric field and characterized by a threshold voltage, and a low resistivity ON state, Switching can be either threshold type or memory type. The phenomenon of switching could find applications in areas like infonnation storage, electrical power control etc. Investigations on electrical switching in chalcogenide glasses help in understanding the mechanism of switching which is necessary to select and modify materials for specific switching applications.Analysis of XRD pattern gives no further infonuation about amorphous materials than revealing their disordered structure whereas x-ray photoelectron spectroscopy,XPS) provides information about the different constituents present in the material. Also it gives binding energies (b.e.) of an element in different compounds and hence b.e. shift from the elemental form.Our investigations have been concentrated on the bulk glasses, Ge-In-Se, Ge-Bi-Se and As-Sb-Se for photoconductivity measurements and In-Te for electrical switching. The photoconducting properties of Ge-Sb-Se thin films prepared by sputtering technique have also been studied. The bulk glasses for the present investigations are prepared by the melt quenching technique and are annealed for half an hour at temperatures just below their respective glass transition temperatures. The dependence of photoconducting propenies on composition and temperature are investigated in each system. The electrical switching characteristics of In-Te system are also studied with different compositions and by varying the temperature.

Evaluation of electrical conductivity and thermal diffusivity of vanadyl naphthalocyanine

The electrical conductivity and thermal diffusivity of pristine and iodine doped vanadyl naphthalocyanine (VONc) were studied. In the pristine sample, the temperature dependence was very weak below 300 K. The increase in conductivity at higher temperature must be due to an enhancement in carrier density with increase in thermal energy. The electrical conductivity of VONc increased when doped with iodine. The behavior of VONcI indicated that considerable changes have occurred in the electronic environment of the molecule as a result of doping. Iodine doping enhanced the thermal diffusivity of VONc. The increase in thermal diffusivity of the iodine doped sample may be due to the disorder of iodine atoms occupying the channels in one dimensional lattices.

DC electrical conductivity and phase transitions in (NH4)3H(SO4)2

Four distinct peaks are observed at 140, -26, -132 and -140°C in the sigma x* against T-1 plot between 200 and - 196°C for (NH4)3H(SO4)2, corresponding to four different phase transitions of which the one at -26°C is reported here for the first time. Data on doped samples reveal the charge transport mechanism in the crystal.

Electrical conductivity, dielectric constant and phase transitions in pure and doped diammonium hydrogen phosphate

DC and AC electrical conductivity measurements in single crystals of diammonium hydrogen phosphate along the c axis show anomalous variations at 174, 246 and 416 K. The low-frequency dielectric constant also exhibits peaks exactly at these temperatures with a thermal hysteresis of 13 degrees C for the peak at 416 K. These specific features of the electrical properties are in agreement with earlier NMR second-moment data and can be identified with three distinct phase transitions that occur in the crystal. The electrical conductivity values have been found to increase linearly with impurity concentration in specimens doped with a specific amount of SO42- ions. The mechanisms of the phase transition and of the electrical conduction process are discussed in detail.

Electrical properties and phase transitions in ethylenediammonium dinitrate

dc and ac electrical conductivities, dielectric constant and dielectric loss factor in single crystals of ethylenediammonium dinitrate (EDN) have been measured axiswise as a function of temperature. All the above properties exhibit anomalous variations at 404 K thereby confirming the occurence of a phase transition in EDN at this temperature. Electrical conductivity parameters have been evaluated and possible conduction mechanisms are discussed. The role of protons in electrical trasport phenomenon is established by chemical analysis.

Effect of deuteration on the electrical conductivity, dielectric constant and phase transitions in LiNH4SO4

Measurements of dc conductivity and dielectric constant show that deuteration causes an upward shift of the high temperature phase transition point from 186.5 to 191°C and a downward shift of the low temperature transition point from 10 to -1.5°C in LiNH4SO4. Mechanisms of phase transitions and of electrical transport in the crystal are discussed.

Mechanism of electrical conduction in plasma polymerized furfural thin films

Polyfurfural thin films lying in the thickness range of 1300–2000 A˚ were prepared by ac plasma polymerization technique. The current–voltage characteristics in symmetric and asymmetric electrode configuration were studied with a view to determining the dominant conduction mechanism.It was found that the Schottky conduction mechanism is dominant in plasma polymerized furfural thin films.The predominance of Schottky mechanism was further confirmed based on the thermally stimulated current measurements.