986 resultados para Alessandro Baricco
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In this review paper different designs based on stacked p-i'-n-p-i-n heterojunctions are presented and compared with the single p-i-n sensing structures. The imagers utilise self-field induced depletion layers for light detection and a modulated laser beam for sequential readout. The effect of the sensing element structure, cell configurations (single or tandem), and light source properties (intensity and wavelength) are correlated with the sensor output characteristics (light-to-dark sensivity, spatial resolution, linearity and S/N ratio). The readout frequency is optimized showing that scans speeds up to 104 lines per second can be achieved without degradation in the resolution. Multilayered p-i'-n-p-i-n heterostructures can also be used as wavelength-division multiplexing /demultiplexing devices in the visible range. Here the sensor element faces the modulated light from different input colour channels, each one with a specific wavelength and bit rate. By reading out the photocurrent at appropriated applied bias, the information is multiplexed or demultiplexed and can be transmitted or recovered again. Electrical models are present to support the sensing methodologies.
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In this paper we present results on the optimization of device architectures for colour and imaging applications, using a device with a TCO/pinpi'n/TCO configuration. The effect of the applied voltage on the color selectivity is discussed. Results show that the spectral response curves demonstrate rather good separation between the red, green and blue basic colors. Combining the information obtained under positive and negative applied bias a colour image is acquired without colour filters or pixel architecture. A low level image processing algorithm is used for the colour image reconstruction.
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Microcrystalline silicon is a two-phase material. Its composition can be interpreted as a series of grains of crystalline silicon imbedded in an amorphous silicon tissue, with a high concentration of dangling bonds in the transition regions. In this paper, results for the transport properties of a mu c-Si:H p-i-n junction obtained by means of two-dimensional numerical simulation are reported. The role played by the boundary regions between the crystalline grains and the amorphous matrix is taken into account and these regions are treated similar to a heterojunction interface. The device is analysed under AM1.5 illumination and the paper outlines the influence of the local electric field at the grain boundary transition regions on the internal electric configuration of the device and on the transport mechanism within the mu c-Si:H intrinsic layer.
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ZnO:Al/p (SiC:H)/i (Si:H)/n (SiC:H) large area image and colour sensor are analysed. Carrier transport and collection efficiency are investigated from dark and illuminated current-voltage (I-V) dependence and spectral response measurements under different optical and electrical bias conditions. Results show that the carrier collection depends on the optical bias and on the applied voltage. By changing the electrical bias around the open circuit voltage it is possible to filter the absorption at a given wavelength and so to tune the spectral sensitivity of the device. Transport and optical modelling give insight into the internal physical process and explain the bias control of the spectral response and the image and colour sensing properties of the devices.
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OBJETIVO: Estabelecer a influência exercida por três diferentes biótopos em áreas do Parque Nacional da Serra da Bocaina (PNSB) sobre a fauna local de mosquitos. MÉTODOS: Foram realizadas capturas mensais em ambiente silvestre e domiciliar, em isca humana, durante três diferentes períodos do dia, pelo período de 24 meses consecutivos, de janeiro de 1991 a dezembro de 1992. RESULTADOS: Foram capturados 11.808 espécimes adultos, pertencentes a 28 espécies. Ru. reversa e An. cruzii foram predominantes, respectivamente 52,5% e 17,9% do total de mosquitos. Ru. reversa representou 59,4% do total de espécimes no ambiente de mata fechada, seguida por Ru. frontosa com 10,5% e An. cruzii com 9,9%. No ambiente formado por campos de altitude e matas de galeria, o An. cruzii predominou com 48,1%, seguido por Ru. reversa com 28,1%. No ambiente modificado pelo homem, o An. cruzii predominou com 73,7% dos espécimes. Coquillettidia chrysonotum foi a única que se apresentou preferencialmente nesse biótopo: 14,9% no intra, 19,4% no peri e 65,7% no extradomicílio. An. cruzii e Ru. reversa foram constantes em todos os ambientes ao longo do ano. CONCLUSÕES: Com exceção de Cq. chrysonotum, com preferência pelo ambiente modificado pelo homem, os mosquitos apresentam hábitos assinantrópicos no PNSB. An. cruzii, embora assinantrópico, se aproxima e adentra o domicílio para realizar a hematofagia. A presença do Ae. serratus no extra e peridomicílio reforça a importância epidemiológica como vetora potencial de arboviroses. Os Sabethini apresentaram-se exclusivamente silvestres.
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OBJETIVO: Estabelecer a influência exercida pelos fatores climáticos na freqüência mensal da fauna de mosquitos em áreas do Parque Nacional da Serra da Bocaina, Vale do Paraíba, SP. MÉTODOS: Foram realizadas capturas mensais por meio de isca humana, em três diferentes períodos do dia, durante 24 meses consecutivos (janeiro de 1991 a dezembro de 1992). RESULTADOS: Foram capturados 11.808 espécimes adultos pertencentes a 28 espécies. Anopheles cruzii, Runchomyia reversa e Ru. frontosa foram as espécies mais presentes em todos os meses do ano; An. cruzii ocorreu preferencialmente de outubro a fevereiro; Ru. reversa e Ru. frontosa, em setembro; An. lutzi, Chagasia fajardoi, Coquillettidia chrysonotum, Aedes serratus, Trichoprosopon simile, Wyeomyia theobaldi, Ru. humboldti e Ru. theobaldi, pertencentes ao segundo grupo de espécies mais abundantes, ocorreram preferencialmente nos meses mais quentes, úmidos e chuvosos. A temperatura e as precipitações pluviométricas influenciaram positivamente na incidência da maioria das espécies. CONCLUSÕES: A cobertura vegetal de Mata Atlântica bem preservada, as precipitações pluviométricas e a temperatura foram determinantes para a incidência da fauna de mosquitos no parque. Os meses mais chuvosos, úmidos e quentes contribuíram para o aumento da diversidade e da densidade. O período de setembro a março foi o mais favorável. Cerca de 70% das espécies chegaram a desaparecer no período de abril a agosto, os meses mais frios e secos do ano.
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OBJETIVO: Os tipos de câncer de pulmão, laringe e esôfago têm como um de seus principais fatores de risco o fumo. O objetivo do estudo foi avaliar o risco populacional atribuível ao fumo nesses tipos de câncer. MÉTODOS: A pesquisa baseou-se em três estudos de caso-controle em cidade de médio porte do Brasil. Analisaram-se casos incidentes hospitalares de câncer de pulmão, de laringe e de esôfago diagnosticados por biópsias; os controles foram pacientes hospitalizados por outros motivos, sem ser câncer ou doenças altamente relacionadas ao fumo. O fator de exposição foi o tabagismo medido em três níveis: não-fumantes, ex-fumantes e fumantes atuais, definidos por meio de questionários aplicados por entrevistadores treinados. Para a medida de efeito, foi utilizado o odds ratio obtendo-se, dessa forma, o "risco populacional atribuível" ao fumo com IC de 95%. RESULTADOS: Foram estudados 122 casos e 244 controles de câncer de pulmão, 50 casos de câncer de laringe e 48 casos de câncer de esôfago, com um grupo de 96 controles comum a ambos. A prevalência da exposição ao fumo utilizada para a análise foi de 34%, que corresponde à prevalência de fumo na população adulta da cidade. Os odds ratios para o cálculo do risco populacional atribuível foram obtidos por análises ajustadas para os fatores de confusão de cada um dos estudos. Para ex-fumantes com câncer de pulmão, o risco populacional atribuível foi de 63% (IC95%, 0,58-0,68) e, para fumantes, de 71% (IC95%, 0,65-0,77). Para câncer de laringe, o RPA foi de 74% (IC95%, 0,70-0,78) para ex-fumantes e de 86% (IC95%, 0,81-0,85) para fumantes. O câncer de esôfago mostrou um risco de 54% (IC95%, 0,46-0,62) para fumantes. CONCLUSÃO: Conclui-se que o fumo é um importante fator de risco e que a cessação do mesmo contribuiria para reduções significativas na incidência de câncer nesses três sítios.
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Characteristics of tunable wavelength filters based on a-SiC:H multi-layered stacked cells are studied both theoretically and experimentally. Results show that the light-activated photonic device combines the demultiplexing operation with the simultaneous photodetection and self amplification of an optical signal. The sensor is a bias wavelength current-controlled device that make use of changes in the wavelength of the background to control the power delivered to the load, acting a photonic active filter. Its gain depends on the background wavelength that controls the electrical field profile across the device.
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Characteristics of tunable wavelength pi'n/pin filters based on a-SiC:H multilayered stacked cells are studied both experimental and theoretically. Results show that the device combines the demultiplexing operation with the simultaneous photodetection and self amplification of the signal. An algorithm to decode the multiplex signal is established. A capacitive active band-pass filter model is presented and supported by an electrical simulation of the state variable filter circuit. Experimental and simulated results show that the device acts as a state variable filter. It combines the properties of active high-pass and low-pass filter sections into a capacitive active band-pass filter using a changing photo capacitance to control the power delivered to the load.
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Optical colour sensors based on multilayered a-SiC:H heterostructures can act as voltage controlled optical filters in the visible range. In this article we investigate the application of these structures for Fluorescence Resonance Energy Transfer (FRET) detection, The characteristics of a-SiC:H multilayered structure are studied both theoretically and experimentally in several wavelengths corresponding to different fluorophores. The tunable optical p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructures were produced by PECVD and tested for a proper fine tuning in the violet, cyan and yellow wavelengths. The devices were characterized through transmittance and spectral response measurements, under different electrical bias and frequencies. Violet, cyan and yellow signals were applied in simultaneous and results have shown that they can be recovered under suitable applied bias. A theoretical analysis supported by numerical simulation is presented.
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The characteristics of tunable wavelength filters based on a-SiC:H multilayered stacked pin cells are studied both theoretically and experimentally. The optical transducers were produced by PECVD and tested for a proper fine tuning of the cyan and yellow fluorescent proteins emission. The active device consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructures sandwiched between two transparent contacts. Experimental data on spectral response analysis, current-voltage characteristics and color and transmission rate discrimination are reported. Cyan and yellow fluorescent input channels were transmitted together, each one with a specific transmission rate and different intensities. The multiplexed optical signal was analyzed by reading out, under positive and negative applied voltages, the generated photocurrents. Results show that the optimized optical transducer has the capability of combining the transient fluorescent signals onto a single output signal without losing any specificity (color and intensity). It acts as a voltage controlled optical filter: when the applied voltages are chosen appropriately the transducer can select separately the cyan and yellow channel emissions (wavelength and frequency) and also to quantify their relative intensities. A theoretical analysis supported by a numerical simulation is presented.
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In this paper we present results on the use of a multilayered a-SiC:H heterostructure as a wavelength-division demultiplexing device for the visible light spectrum. The proposed device is composed of two stacked p-i-n photodiodes with intrinsic absorber regions adjusted to short and long wavelength absorption and carrier collection. An optoelectronic characterisation of the device was performed in the visible spectrum. Demonstration of the device functionality for WDM applications was done with three different input channels covering the long, the medium and the short wavelengths in the visible range. The recovery of the input channels is explained using the photocurrent spectral dependence on the applied voltage. An electrical model of the WDM device is proposed and supported by the solution of the respective circuit equations. Short range optical communications constitute the major application field, however other applications are also foreseen.
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This paper discusses the photodiode capacitance dependence on imposed light and applied voltage using different devices. The first device is a double amorphous silicon pin-pin photodiode; the second one a crystalline pin diode and the last one a single pin amorphous silicon diode. Double amorphous silicon diodes can be used as (de)multiplexer devices for optical communications. For short range applications, using plastic optical fibres, the WDM (wavelength-division multiplexing) technique can be used in the visible light range to encode multiple signals. Experimental results consist on measurements of the photodiode capacitance under different conditions of imposed light and applied voltage. The relation between the capacitive effects of the double diode and the quality of the semiconductor internal junction will be analysed. The dynamics of charge accumulations will be measured when the photodiode is illuminated by a pulsed monochromatic light.
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Multilayered heterostructures based on embedded a-Si:H and a-SiC:H p-i-n filters are analyzed from differential voltage design perspective using short- and long-pass filters. The transfer functions characteristics are presented. A numerical simulation is presented to explain the filtering properties of the photonic devices. Several monochromatic pulsed lights, separately (input channels) or in a polychromatic mixture (multiplexed signal) at different bit rates, illuminated the device. Steady-state optical bias is superimposed from the front and the back side. Results show that depending on the wavelength of the external background and impinging side, the device acts either as a short- or a long-pass band filter or as a band-stop filter. Particular attention is given to the amplification coefficient weights, which allow to take into account the wavelength background effects when a band or frequency needs to be filtered or the gate switch, in which optical active filter gates are used to select and filter input signals to specific output ports in wavelength division multiplexing (WDM) communication systems. This nonlinearity provides the possibility for selective removal or addition of wavelengths. A truth table of an encoder that performs 8-to-1 MUX function exemplifies the optoelectronic conversion.
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Tunable wavelength division multiplexing converters based on amorphous SiC multilayer photonic active filters are analyzed. The configuration includes two stacked p-i-n structures (p(a-SiC:H)-i'(a-SiC:H)-n(a-SiC:H)-p(a-SiC:H)-i(a-Si:H)-n(a-Si:H)) sandwiched between two transparent contacts. The manipulation of the magnitude is achieved through appropriated front and back backgrounds. Transfer function characteristics are studied both theoretically and experimentally. An algorithm to decode the multiplex signal is established. An optoelectronic model supports the optoelectronic logic architecture. Results show that the light-activated device combines the demultiplexing operation with the simultaneous photodetection and self-amplification of an optical signal. The output waveform presents a nonlinear amplitude-dependent response to the wavelengths of the input channels. Depending on the wavelength of the external background and irradiation side, it acts either as a short- or a long-pass band filter or as a band-stop filter. A two-stage active circuit is presented and gives insight into the physics of the device.