977 resultados para 11.5BC46-2


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独龙江流域位于云南省的西北部,北与青藏高原相连,西与缅甸毗邻.中国科学院昆明动物研究所于2004年10月~11月对该水域鱼类资源进行了具体调查,共计采集到鱼类标本883号,分别属于鲤形目、鲇形目;裂腹鱼亚科、野鲮亚科、鮡科;共2目、3科(亚科)、6属、7种.对独龙江鱼类区系与其相邻水系的鱼类区系进行比较分析,认为独龙江水系的鱼类区系与怒江水系的鱼类区系有着更近的渊缘关系.

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采用RAPD和PCR-DGGE指纹技术对转基因鱼试验湖的浮游生物群落DNA多态性进行了研究,并探讨了DNA多态性与物种组成的关系.结果显示:(1)形态学分类共鉴定到44种/类浮游生物:其中藻类13种,原生动物11种,轮虫16种,枝角类和桡足类各2种.多甲藻(Peridinium sp.)、球形砂壳虫(Difflugia globulosa)、螺形龟甲轮虫(Keratella cochlearis)和针簇多肢轮虫(Polyarthra trigla)4个物种在各个站丰度相对较高.(2)RAPD扩增共获得12

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自2007年5月至2008年4月对湖北省枣阳市熊河水库的浮游植物群落进行调查和分析。调查共发现浮游植物49属74种,绿藻在种类组成上占绝对优势,共40种,其次为蓝藻,有15种,硅藻11种,甲藻3种,金藻和裸藻各2种,隐藻仅1种。蓝藻存在夏季(7月)高峰,优势种为卷曲鱼腥藻(Anabaena circinalis);硅藻、隐藻和甲藻均存在一个春季(3或4月)高峰,优势种分别为双头针杆藻(Synedra amphicephala)、羽纹脆杆藻(Fragilaria pinnata)、卵形隐藻(Cryptomo

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利用55对微卫星引物对珠江和海南长臀基因组DNA进行了扩增,有23对能扩增出清晰条带,其中有11对在珠江长臀中表现多态性,9对在海南长臀中表现多态。这些多态性位点的等位基因数在2~4之间,平均等位基因数2.91个。结果显示:珠江长臀的平均观测杂合度(Ho)是0.45,平均期望杂合度(He)是0.46,平均多态信息含量(PIC)为0.377;海南长臀的平均观测杂合度(Ho)和平均期望杂合度(He)分别是0.58、0.53,平均多态信息含量(PIC)为0.426。两群体间的遗传相似度为0.875、遗

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比较了鱼类养殖前后 ,地下水中正磷酸盐 (o P)浓度、碱性磷酸酶活性 (APA)在不同大小颗粒之间的分布、溶解态APA对pH、温度、CuSO4、ZnSO4、EDTA 2Na与表面活性剂 (CTAB与TritonX 10 0 )的应答方式及其动力学特征。养鱼之后 ,玻璃缸水中碱性磷酸酶表现出明显较高的活性 ,且以溶解态为主要存在形式 ,这种效应与鱼类的品种有关 ,溶解态APA的最大反应速度 (Vmax)与米氏常数 (Km)均明显提高 ,最适温度与pH值以及对于Zn2 + 的应答方式亦发生明显改变 ,颗粒结

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从湖南长沙分离到一株致病性强的草鱼呼肠孤病毒 (GCRV991) ,该病毒能使草鱼CIK ,肥头鲤FHM细胞产生明显的CPE ,对水生动物BF2 ,EPC及哺乳动物BHK ,VERO细胞株不敏感。中和实验显示 ,GCRV873 抗体能有效地中和GCRV991病毒颗粒 ,形成抗原抗体免疫复合物。纯化的病毒核酸与蛋白经SDS PAGE分离 ,分别呈现 11条清晰的核酸带及 5条主要与 2条微量结构多肽图谱 ,其核酸蛋白分子量大小与GCRV873 相近似。该毒株基因组总分子量为 14.48× 10 6kD ,大

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This paper presents a theoretical and experimental analysis of a biologically inspired balloon-type pneumatic microactuator. The operation principle of pneumatic balloon actuators (PBA's) is based on an asymmetric deflection of two PDMS layers with different thicknesses or different Young's moduli that are bonded together. A new analytical 2D model that describes the complex behavior of these actuators is presented and validated using both 3D FEM models and measurements. The actuators have dimensions ranging from 11 mm × 2 mm × 0.24 mm to 4 mm × 1 mm × 0.12 mm. Their fabrication is based on micromolding of PDMS, and can therefore easily be fabricated in high throughput. Measurements showed that the analytical model provides a qualitative description of the actuator behavior, and showed that the larger actuators are capable of delivering a 7 mm stroke at a supply pressure of 70 kPa and a force of max 22 mN at a supply pressure of 105 kPa. © 2011 Elsevier B.V. All rights reserved.

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把池塘育成的早熟河蟹(即一秋龄性腺成熟中华绒螯蟹)放养于湖汊,其群体越冬成活率为11%。在第二年养殖期间,早熟河蟹不脱壳,体重维持在原来的水平,对鱼肉的日摄食率最高为1.2%,个体不断死亡,至7月中旬,群体全部死完。从当年11月下旬到第二年7月上旬,早熟河蟹成活率曲线公式为:Y=1.09exp(-0018t)[Y:成活率(%),t:时间(d)]。本文还通过对围栏湖汊和扁担塘早熟河蟹逐月跟踪采样、对同龄的末成熟与成熟河蟹的行为及离水成活时间进行对比观察。作者认为,草型湖泊中早熟河蟹没有养殖价值,但若在第二年

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<正> 1.材料和方法(1)材料来源斑鳢:广东省高要县成鱼饲养塘;月鳢:广州市农贸市场;乌鳢:湖北省沔阳县排湖鱼场;泰国野鲮:广东省新兴县鱼苗场;鲮鱼:广州市农贸市场.每种鱼选择健康活泼、雌雄兼有的个体5—11尾(表1).(2)染色体标本的制备全部实验鱼均用肾组织作材料:①取材前二天腹腔注射PHA 2mg/200g 鱼;②取材前二小时腹腔注射秋水仙素6μg/g 鱼,③取材前10分钟断腮

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<正> 中国科学院水生生物研究所第一研究室鱼类生态的研究人员,于1982年11月1~2日(水温18~19℃),解剖了30尾从宜昌十里红江段刚捕起的铜鱼,发现其中14尾鱼的肠管中有中华鲟的卵,胚胎已发育到囊胚期和原肠期.据推算距受精时间约为17~25小时.11月5~6日在同一地点,又解剖到肠管中含有中华鲟卵的铜鱼7尾,卵子发育至卵裂期,距受精时间约数小时,可判定与11月1~2日所发现的鲟卵不是同批产出的.

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The design, 3D FEM modelling and measurement results of a novel high temperature, low power SOI CMOS MEMS thermal conductivity gas sensor are presented here. The sensor consists of a circular membrane with an embedded tungsten micro-heater. The high sensing capability is based on the temperature sensitivity of the resistive heating element. The sensor was fabricated at a commercial foundry using a 1 μm process and measures only 1×1 mm 2. The circular membrane has a 600 μm diameter while the heating element has a 320 μm diameter. Measurement results show that for a constant power consumption of 75 mW the heater temperature was 562.4°C in air, 565.9°C in N2, 592.5°C for 1 % H2 in Ar and 599.5°C in Ar. © 2013 IEEE.

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We used a cyclic reactive ion etching (RIE) process to increase the Co catalyst density on a cobalt disilicide (CoSi2) substrate for carbon nanotube (CNT) growth. Each cycle of catalyst formation consists of a room temperature RIE step and an annealing step at 450 °C. The RIE step transfers the top-surface of CoSi2 into cobalt fluoride; while the annealing reduces the fluoride into metallic Co nanoparticles. We have optimized this cyclic RIE process and determined that the catalyst density can be doubled in three cycles, resulting in a final CNT shell density of 6.6 × 10 11 walls·cm-2. This work demonstrates a very effective approach to increase the CNT density grown directly on silicides. © 2014 AIP Publishing LLC.

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In this paper, we obtain SiGe quantum dots with the diameters and density of 15-20 nm and 1.8 x 10(11) cm(-2), respectively, by 193 nm excimer laser annealing of Si0.77Ge0.23 strained films. Under the excimer laser annealing, only surface atoms diffusion happens. From the detailed statistical information about the size and shape of the quantum dots with different annealing time, it is shown that the as-grown self-assembled quantum dots, especially the {105}-faceted dots, are not stable and disappear before the appearance of the laser-induced quantum dots. Based on the calculation of surface energy and surface chemical potential, we show that the {103}-faceted as-grown self-assembled quantum dots are more heavily strained than the {105}-faceted ones, and the heavy strain in the dot can decrease the surface energy of the dot facets. The formation of the laser-induced quantum dots, which is also with heavy strain, is attributed to kinetic constraint. (c) 2008 Elsevier B.V. All rights reserved.

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Si-based photonic materials and devices, including SiGe/Si quantum structures, SOI and InGaAs bonded on Si, PL of Si nanocrystals, SOI photonic crystal filter, Si based RCE (Resonant Cavity Enhanced) photodiodes, SOI TO (thermai-optical) switch matrix were investigated in Institute of Serniconductors, Chinese Academy of Sciences. The main results in recent years are presented in the paper. The mechanism of PL from Si NCs embedded in SiO2 matrix was studied, a greater contribution of the interface state recombination (PL peak in 850 similar to 900 nm) is associated with larger Si NCs and higher interface state density. Ge dots with density of order of 10(11) cm(-2) were obtained by UHV/CVD growth and 193 nm excimer laser annealing. SOI photonic crystal filter with resonant wavelength of 1598 nm and Q factor of 1140 was designed and made. Si based hybrid InGaAs RCE PD with eta of 34.4% and FWHM of 27 nut were achieved by MOCVD growth and bonding technology between InGaAs epitaxial and Si wafers. A 16x16 SOI optical switch matrix were designed and made. A new current driving circuit was used to improve the response speed of a 4x4 SOI rearrangeable nonblocking TO switch matrix, rising and failing time is 970 and 750 ns, respectively.

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By replacing the flat (Ga1-xAlx)As barrier layer with a trapezoidal AlxGa1-xAs barrier layer, a conventional heterostructure can be operated in enhancement mode. The sheet density of two-dimensional electron gas (2DEG) in the structure can be tuned linearly from N-2D = 0.3 x 10(11) cm(-2) to N-2D = 4.3 x 10(11) cm(-2) by changing the bias on the top gate. The present scheme for gated heterostructures is easy to fabricate and does not require the use of self-alignment photolithography or the deposition of insulating layers. In addition, this scheme facilitates the initial electrical contact to 2DEG. Although, the highest electron mobility obtained for the moment is limited by the background doping level of heterostructures, the mobility should be improved substantially in the future. (C) 2009 Elsevier B.V. All rights reserved.